with at least one cell select transistor

Industry

CPC
H01L27/1157

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Parent Industries

HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L27/00Devices consisting of a plurality of semiconductor or other solid state components formed in or on a common substrate

Current Industry

H01L27/1157with at least one cell select transistor

Industries

Patents Grantslast 30 patents

Information Patent Grant
Microelectronic devices and related methods of forming microelectro...
- Patent number 11,690,234
- Issue date Jun 27, 2023
- Micron Technology, Inc.
- Bo Zhao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor memory device and manufacturing method of the semicon...
- Patent number 11,688,682
- Issue date Jun 27, 2023
- SK hynix Inc.
- Jin Won Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nonvolatile memory device and method for fabricating the same
- Patent number 11,683,934
- Issue date Jun 20, 2023
- Samsung Electronics Co., Ltd.
- Young-Jin Jung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Embedded memory using SOI structures and methods
- Patent number 11,678,491
- Issue date Jun 13, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chien Hung Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 11,676,836
- Issue date Jun 13, 2023
- Samsung Electronics Co., Ltd.
- Jae Ick Son
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Active protection circuits for semiconductor devices
- Patent number 11,676,917
- Issue date Jun 13, 2023
- Micron Technology, Inc.
- Michael A. Smith
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Electronic device having stacked structures and method for manufact...
- Patent number 11,678,487
- Issue date Jun 13, 2023
- SK Hynix Inc.
- Ki Hong Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional semiconductor memory device
- Patent number 11,678,488
- Issue date Jun 13, 2023
- Samsung Electronics Co., Ltd.
- Seokcheon Baek
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor memory device including separated epitaxial layers
- Patent number 11,672,121
- Issue date Jun 6, 2023
- Renesas Electronics Corporation
- Tadashi Yamaguchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional memory array with local line selector
- Patent number 11,672,123
- Issue date Jun 6, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chen-Jun Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
3D memory device including shared select gate connections between m...
- Patent number 11,670,370
- Issue date Jun 6, 2023
- Micron Technology, Inc.
- Aaron Yip
- G11 - INFORMATION STORAGE
Information Patent Grant
Sense line structures in capacitive sense NAND memory
- Patent number 11,670,379
- Issue date Jun 6, 2023
- Micron Technology, Inc.
- Yoshiaki Fukuzumi
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory arrays and methods used in forming a memory array comprising...
- Patent number 11,672,114
- Issue date Jun 6, 2023
- Micron Technology, Inc.
- Bharat Bhushan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor memory device and method for manufacturing same
- Patent number 11,672,117
- Issue date Jun 6, 2023
- Kioxia Corporation
- Kotaro Fujii
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High voltage CMOS with co-planar upper gate surfaces for embedded n...
- Patent number 11,672,124
- Issue date Jun 6, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Harry-Hak-Lay Chuang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated assemblies having charge-trapping material arranged in v...
- Patent number 11,672,120
- Issue date Jun 6, 2023
- Micron Technology, Inc.
- Byeung Chui Kim
- G11 - INFORMATION STORAGE
Information Patent Grant
Staircase structure in three-dimensional memory device and method f...
- Patent number 11,670,592
- Issue date Jun 6, 2023
- Yangtze Memory Technologies Co., Ltd.
- Zhong Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and manufacturing method of the same
- Patent number 11,665,904
- Issue date May 30, 2023
- SK hynix Inc.
- Jung Ryul Ahn
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Non-volatile memory
- Patent number 11,665,907
- Issue date May 30, 2023
- Samsung Electronics Co., Ltd.
- Kyung-Hwa Yun
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor devices
- Patent number 11,664,362
- Issue date May 30, 2023
- Samsung Electronics Co., Ltd.
- Hyun Mog Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional memory device and manufacturing method thereof
- Patent number 11,665,905
- Issue date May 30, 2023
- Yangtze Memory Technologies Co., Ltd.
- Qiguang Wang
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Vertical memory device having an insulator layer for improved yield
- Patent number 11,665,906
- Issue date May 30, 2023
- Kioxia Corporation
- Tomoya Inden
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Staircase structure in three-dimensional memory device and method f...
- Patent number 11,665,892
- Issue date May 30, 2023
- Yangtze Memory Technologies Co., Ltd.
- Zhongwang Sun
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional memory device having adjoined source contact stru...
- Patent number 11,665,901
- Issue date May 30, 2023
- Yangtze Memory Technologies Co., Ltd.
- Lu Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-aligned contacts in three-dimensional memory devices and metho...
- Patent number 11,664,309
- Issue date May 30, 2023
- Yangtze Memory Technologies Co., Ltd.
- Hongbin Zhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and photomask
- Patent number 11,665,898
- Issue date May 30, 2023
- Kioxia Corporation
- Daisuke Kawamura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical memory devices with high density dummy channel structure
- Patent number 11,665,899
- Issue date May 30, 2023
- Yangtze Memory Technologies Co., Ltd.
- Yuhui Han
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical memory devices including charge trapping patterns with imp...
- Patent number 11,665,900
- Issue date May 30, 2023
- Samsung Electronics Co., Ltd.
- Younghwan Son
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 11,664,281
- Issue date May 30, 2023
- Samsung Electronics Co., Ltd.
- Hui Chang Moon
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional semiconductor memory devices
- Patent number 11,659,712
- Issue date May 23, 2023
- Samsung Electronics Co., Ltd.
- Taehee Lee
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20240136419
- Publication date Apr 25, 2024
- RENESAS ELECTRONICS CORPORATION
- Hitoshi MAEDA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL MEMORY DEIVCE, MANUFACTURING METHOD THEREOF, AND...
- Publication number 20240130129
- Publication date Apr 18, 2024
- YANGTZE MEMORY TECHNOLOGIES CO., LTD.
- Jiayi Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICE, MANUFACTURING METHOD THEREOF, AND...
- Publication number 20240130130
- Publication date Apr 18, 2024
- Yangtze Memory Technologies Co., Ltd.
- Jiayi Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SINGLE CRYSTAL SILICON CORES FOR STACKED MEMORY CELLS
- Publication number 20240130128
- Publication date Apr 18, 2024
- Micron Technology, Inc.
- Yongjun Hu
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY DEVICE AND METHOD OF FABRICATING THE SAME
- Publication number 20240121954
- Publication date Apr 11, 2024
- Macronix International Co., Ltd.
- Chih-Wei Hu
- G11 - INFORMATION STORAGE
Information Patent Application
CONFIGURABLE CAPACITORS WITH 3D NON-VOLATILE ARRAY
- Publication number 20240114685
- Publication date Apr 4, 2024
- Western Digital Technologies, Inc.
- Liang Li
- G11 - INFORMATION STORAGE
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICE CONTAINING MEMORY OPENING MONITORIN...
- Publication number 20240107758
- Publication date Mar 28, 2024
- SANDISK TECHNOLOGIES LLC
- Hiroyuki OGAWA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICES AND METHODS FOR FORMING THE SAME
- Publication number 20240107760
- Publication date Mar 28, 2024
- Yangtze Memory Technologies Co., Ltd.
- Di Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICE WITH SOURCE LINE ISOLATION AND METH...
- Publication number 20240105622
- Publication date Mar 28, 2024
- SANDISK TECHNOLOGIES LLC
- Ramy Nashed Bassely SAID
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICES AND METHODS FOR FORMING THE SAME
- Publication number 20240107761
- Publication date Mar 28, 2024
- Yangtze Memory Technologies Co., Ltd.
- Di Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICE WITH SOURCE LINE ISOLATION AND METH...
- Publication number 20240105623
- Publication date Mar 28, 2024
- SANDISK TECHNOLOGIES LLC
- Ramy Nashed Bassely SAID
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICE AND METHOD OF FORMING THE SAME
- Publication number 20240099008
- Publication date Mar 21, 2024
- Yangtze Memory Technologies Co., Ltd.
- Tingting GAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL NAND WITH BACKSIDE STACKING
- Publication number 20240099011
- Publication date Mar 21, 2024
- International Business Machines Corporation
- Min Gyu Sung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICES AND METHODS FOR FORMING THE SAME
- Publication number 20240098989
- Publication date Mar 21, 2024
- Yangtze Memory Technologies Co., Ltd.
- Zhengliang Xia
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
- Publication number 20240088043
- Publication date Mar 14, 2024
- Macronix International Co., Ltd.
- Ting-Feng LIAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICE CONTAINING A PILLAR CONTACT BETWEEN...
- Publication number 20240090217
- Publication date Mar 14, 2024
- SANDISK TECHNOLOGIES LLC
- Kyohei NABESAKA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICE AND METHOD OF FORMING THE SAME
- Publication number 20240081069
- Publication date Mar 7, 2024
- Yangtze Memory Technologies Co., Ltd.
- Tingting GAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ELECTRONIC DEVICES INCLUDING ISOLATION STRUCTURES EXHIBITING A WEAV...
- Publication number 20240081076
- Publication date Mar 7, 2024
- Micron Technology, Inc.
- Sidhartha Gupta
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTERVENING POLYSILICON MATERIALS THAT ARE THICKER AT DISTAL EDGES...
- Publication number 20240081070
- Publication date Mar 7, 2024
- Micron Technology, Inc.
- Alyssa N. Scarbrough
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MICROELECTRONIC DEVICES INCLUDING STAIRCASE STRUCTURES, AND RELATED...
- Publication number 20240079057
- Publication date Mar 7, 2024
- Micron Technology, Inc.
- Anna Maria Conti
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREFOR
- Publication number 20240081051
- Publication date Mar 7, 2024
- Yangtze Memory Technologies Co., Ltd.
- Zhen GUO
- G11 - INFORMATION STORAGE
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICE AND METHOD OF MAKING THEREOF USING...
- Publication number 20240074200
- Publication date Feb 29, 2024
- SANDISK TECHNOLOGIES LLC
- Bing ZHOU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Memory Circuitry And Method Used In Forming Memory Circuitry
- Publication number 20240074202
- Publication date Feb 29, 2024
- Micron Technology, Inc.
- John D. Hopkins
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STAIRCASE FORMATION IN A MEMORY ARRAY
- Publication number 20240071816
- Publication date Feb 29, 2024
- Micron Technology, Inc.
- Alyssa N. Scarbrough
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR WIRING DEVICE AND METHOD
- Publication number 20240071425
- Publication date Feb 29, 2024
- Micron Technology, Inc.
- Hidenori Yamaguchi
- G11 - INFORMATION STORAGE
Information Patent Application
Memory Arrays Comprising Strings Of Memory Cells And Methods Used I...
- Publication number 20240071498
- Publication date Feb 29, 2024
- Micron Technology, Inc.
- Yongjun Jeff Hu
- G11 - INFORMATION STORAGE
Information Patent Application
FOLDED STAIRCASE VIA ROUTING FOR MEMORY
- Publication number 20240071902
- Publication date Feb 29, 2024
- Micron Technology, Inc.
- Shuangqiang Luo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Memory Circuitry And Method Used In Forming Memory Circuitry
- Publication number 20240071495
- Publication date Feb 29, 2024
- Micron Technology, Inc.
- Jiewei Chen
- G11 - INFORMATION STORAGE
Information Patent Application
SELF-SUPPORTING SGD STADIUM
- Publication number 20240071497
- Publication date Feb 29, 2024
- Micron Technology, Inc.
- Anna Maria Conti
- G11 - INFORMATION STORAGE
Information Patent Application
STAIRCASE FORMATION IN A MEMORY ARRAY
- Publication number 20240071502
- Publication date Feb 29, 2024
- Micron Technology, Inc.
- Alyssa N. Scarbrough
- G11 - INFORMATION STORAGE

with at least one cell select transistor

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Microelectronic devices and related methods of forming microelectro...

Semiconductor memory device and manufacturing method of the semicon...

Nonvolatile memory device and method for fabricating the same

Embedded memory using SOI structures and methods

Semiconductor device

Active protection circuits for semiconductor devices

Electronic device having stacked structures and method for manufact...

Three-dimensional semiconductor memory device

Semiconductor memory device including separated epitaxial layers

Three-dimensional memory array with local line selector

3D memory device including shared select gate connections between m...

Sense line structures in capacitive sense NAND memory

Memory arrays and methods used in forming a memory array comprising...

Semiconductor memory device and method for manufacturing same

High voltage CMOS with co-planar upper gate surfaces for embedded n...

Integrated assemblies having charge-trapping material arranged in v...

Staircase structure in three-dimensional memory device and method f...

Semiconductor device and manufacturing method of the same

Non-volatile memory

Semiconductor devices

Three-dimensional memory device and manufacturing method thereof

Vertical memory device having an insulator layer for improved yield

Staircase structure in three-dimensional memory device and method f...

Three-dimensional memory device having adjoined source contact stru...

Self-aligned contacts in three-dimensional memory devices and metho...

Semiconductor device and photomask

Vertical memory devices with high density dummy channel structure

Vertical memory devices including charge trapping patterns with imp...

Semiconductor device

Three-dimensional semiconductor memory devices

Patents Applicationslast 30 patents

SEMICONDUCTOR DEVICE

THREE-DIMENSIONAL MEMORY DEIVCE, MANUFACTURING METHOD THEREOF, AND...

THREE-DIMENSIONAL MEMORY DEVICE, MANUFACTURING METHOD THEREOF, AND...

SINGLE CRYSTAL SILICON CORES FOR STACKED MEMORY CELLS

MEMORY DEVICE AND METHOD OF FABRICATING THE SAME

CONFIGURABLE CAPACITORS WITH 3D NON-VOLATILE ARRAY

THREE-DIMENSIONAL MEMORY DEVICE CONTAINING MEMORY OPENING MONITORIN...

THREE-DIMENSIONAL MEMORY DEVICES AND METHODS FOR FORMING THE SAME

THREE-DIMENSIONAL MEMORY DEVICE WITH SOURCE LINE ISOLATION AND METH...

THREE-DIMENSIONAL MEMORY DEVICES AND METHODS FOR FORMING THE SAME

THREE-DIMENSIONAL MEMORY DEVICE WITH SOURCE LINE ISOLATION AND METH...

THREE-DIMENSIONAL MEMORY DEVICE AND METHOD OF FORMING THE SAME

VERTICAL NAND WITH BACKSIDE STACKING

THREE-DIMENSIONAL MEMORY DEVICES AND METHODS FOR FORMING THE SAME

SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME

THREE-DIMENSIONAL MEMORY DEVICE CONTAINING A PILLAR CONTACT BETWEEN...

THREE-DIMENSIONAL MEMORY DEVICE AND METHOD OF FORMING THE SAME

ELECTRONIC DEVICES INCLUDING ISOLATION STRUCTURES EXHIBITING A WEAV...

INTERVENING POLYSILICON MATERIALS THAT ARE THICKER AT DISTAL EDGES...

MICROELECTRONIC DEVICES INCLUDING STAIRCASE STRUCTURES, AND RELATED...

SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREFOR

THREE-DIMENSIONAL MEMORY DEVICE AND METHOD OF MAKING THEREOF USING...

Memory Circuitry And Method Used In Forming Memory Circuitry

STAIRCASE FORMATION IN A MEMORY ARRAY

SEMICONDUCTOR WIRING DEVICE AND METHOD

Memory Arrays Comprising Strings Of Memory Cells And Methods Used I...

FOLDED STAIRCASE VIA ROUTING FOR MEMORY

Memory Circuitry And Method Used In Forming Memory Circuitry

SELF-SUPPORTING SGD STADIUM

STAIRCASE FORMATION IN A MEMORY ARRAY