with at least one step of making the trench

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CPC
H01L27/1087

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L27/00Devices consisting of a plurality of semiconductor or other solid state components formed in or on a common substrate

Current Industry

H01L27/1087with at least one step of making the trench

Industries

Patents Grantslast 30 patents

Information Patent Grant
Semiconductor device
- Patent number 11,676,975
- Issue date Jun 13, 2023
- Semiconductor Energy Laboratory Co., Ltd.
- Shunpei Yamazaki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 11,670,700
- Issue date Jun 6, 2023
- Samsung Electronics Co., Ltd.
- Young-Kwan Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated assemblies and methods of forming integrated assemblies
- Patent number 11,670,707
- Issue date Jun 6, 2023
- Micron Technology, Inc.
- David K. Hwang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing semiconductor device having buried gate ele...
- Patent number 11,670,537
- Issue date Jun 6, 2023
- Samsung Electronics Co., Ltd.
- Byung-jae Kang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Minimizing shorting between FinFET epitaxial regions
- Patent number 11,664,375
- Issue date May 30, 2023
- TESSERA LLC
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor memory device having spacer capping pattern disposed...
- Patent number 11,665,883
- Issue date May 30, 2023
- Samsung Electronics Co., Ltd.
- Inkyoung Heo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Intermediate separation layers at the back-end-of-line
- Patent number 11,652,047
- Issue date May 16, 2023
- Intel Corporation
- Travis W. Lajoie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor memory devices
- Patent number 11,653,490
- Issue date May 16, 2023
- Samsung Electronics Co., Ltd.
- Seokho Shin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices and methods of fabricating the same
- Patent number 11,646,225
- Issue date May 9, 2023
- Samsung Electronics Co., Ltd.
- Myeong-Dong Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory device having a channel provided on a memory unit
- Patent number 11,647,625
- Issue date May 9, 2023
- Samsung Electronics Co., Ltd.
- Jaeho Hong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-aligned etch back for vertical three dimensional (3D) memory
- Patent number 11,641,732
- Issue date May 2, 2023
- Micron Technology, Inc.
- Litao Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory structure having a hexagonal shaped bit line contact dispose...
- Patent number 11,641,735
- Issue date May 2, 2023
- NANYA TECHNOLOGY CORPORATION
- Yu-Ying Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Apparatus comprising compensation capacitors
- Patent number 11,637,105
- Issue date Apr 25, 2023
- Micron Technology, Inc.
- Shigeru Sugioka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 11,637,110
- Issue date Apr 25, 2023
- Samsung Electronics Co., Ltd.
- Jihye Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 11,631,613
- Issue date Apr 18, 2023
- United Microelectronics Corp.
- Chih-Kai Hsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bonded unified semiconductor chips and fabrication and operation me...
- Patent number 11,631,688
- Issue date Apr 18, 2023
- Yangtze Memory Technologies Co., Ltd.
- Jun Liu
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor device
- Patent number 11,631,679
- Issue date Apr 18, 2023
- United Microelectronics Corp.
- Luo-Hsin Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical contacts for semiconductor devices
- Patent number 11,631,681
- Issue date Apr 18, 2023
- Micron Technology, Inc.
- Byung Yoon Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor memory structure and method for forming the same
- Patent number 11,631,675
- Issue date Apr 18, 2023
- Winbond Electronics Corp.
- Yu-Po Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory device and forming method thereof
- Patent number 11,626,408
- Issue date Apr 11, 2023
- CHANGXIN MEMORY TECHNOLOGIES, INC.
- Shuai Guo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor memory device, method of manufacturing the same, and...
- Patent number 11,626,498
- Issue date Apr 11, 2023
- Institute of Microelectronics, Chinese Academy of Sciences
- Huilong Zhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for fabricating the same
- Patent number 11,626,501
- Issue date Apr 11, 2023
- Samsung Electronics Co., Ltd.
- In Yeal Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Devices having a transistor and a capacitor along a common horizont...
- Patent number 11,626,406
- Issue date Apr 11, 2023
- Micron Technology, Inc.
- Fredrick D. Fishburn
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor devices having buried gates
- Patent number 11,626,409
- Issue date Apr 11, 2023
- Samsung Electronis Co., Ltd.
- Huijung Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
DRAM with selective epitaxial cell transistor
- Patent number 11,626,407
- Issue date Apr 11, 2023
- Integrated Silicon Solution, (Cayman) Inc.
- Andrew J. Walker
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor memory device and method of fabricating the same
- Patent number 11,626,411
- Issue date Apr 11, 2023
- Samsung Electronics Co., Ltd.
- Jiyoung Kim
- G11 - INFORMATION STORAGE
Information Patent Grant
Method of testing a gap fill for DRAM
- Patent number 11,621,266
- Issue date Apr 4, 2023
- Applied Materials, Inc.
- Priyadarshi Panda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
3D semiconductor memory device and structure
- Patent number 11,615,977
- Issue date Mar 28, 2023
- Monolithic 3D Inc.
- Zvi Or-Bach
- G11 - INFORMATION STORAGE
Information Patent Grant
Buried word line structure and manufacturing method thereof
- Patent number 11,610,892
- Issue date Mar 21, 2023
- Winbond Electronics Corp.
- Chang-Hung Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices and methods of forming semiconductor devices
- Patent number 11,610,896
- Issue date Mar 21, 2023
- Samsung Electronics Co., Ltd.
- Daeik Kim
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
DYNAMIC RANDOM-ACCESS MEMORY USING WIDE BAND GAP MATERIALS
- Publication number 20240224504
- Publication date Jul 4, 2024
- Intel Corporation
- Abhishek Anil SHARMA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY CELL WITH IMPROVED INSULATING STRUCTURE
- Publication number 20240206155
- Publication date Jun 20, 2024
- NANYA TECHNOLOGY CORPORATION
- Chung-Lin HUANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY DEVICE HAVING ULTRA-LIGHTLY DOPED REGION
- Publication number 20240196595
- Publication date Jun 13, 2024
- NANYA TECHNOLOGY CORPORATION
- Chung-Lin HUANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20240196589
- Publication date Jun 13, 2024
- Yangtze Memory Technologies Co., Ltd.
- He CHEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20240188275
- Publication date Jun 6, 2024
- Yangtze Memory Technologies Co., Ltd.
- He Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME
- Publication number 20240179891
- Publication date May 30, 2024
- WINBOND ELECTRONICS CORP.
- Hung-Yu WEI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Vertical FinFet Formation Using Directional Deposition
- Publication number 20240172419
- Publication date May 23, 2024
- Applied Materials, Inc.
- Qintao Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR MAKING THE SAME
- Publication number 20240153873
- Publication date May 9, 2024
- NANYA TECHNOLOGY CORPORATION
- Yu-Hsin WU
- G11 - INFORMATION STORAGE
Information Patent Application
METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
- Publication number 20240147690
- Publication date May 2, 2024
- NANYA TECHNOLOGY CORPORATION
- YING-CHENG CHUANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE HAVING WORD LINE EMBEDDED IN GATE TRENCH
- Publication number 20240147699
- Publication date May 2, 2024
- Micron Technology, Inc.
- Toshiyasu Fujimoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE INCLUDING 3D MEMORY STRUCTURE
- Publication number 20240121939
- Publication date Apr 11, 2024
- NANYA TECHNOLOGY CORPORATION
- SHIH-FAN KUAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BOTTOM CONTACT FORMATION FOR 4F2 VERTICAL DRAM
- Publication number 20240121937
- Publication date Apr 11, 2024
- Applied Materials, Inc.
- Sipeng Gu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INVERTED FERROELECTRIC AND ANTIFERROLECETRIC CAPACITORS
- Publication number 20240114692
- Publication date Apr 4, 2024
- Intel Corporation
- Nazila Haratipour
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR DEVICE HAVING SEMICONDUCTOR CHANNEL LAYER AND METHOD...
- Publication number 20240107744
- Publication date Mar 28, 2024
- NANYA TECHNOLOGY CORPORATION
- Hsih-Yang CHIU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STAGGERED HORIZONTAL CELL ARCHITECTURE FOR MEMORY DEVICES
- Publication number 20240107748
- Publication date Mar 28, 2024
- Micron Technology, Inc.
- William M. Brewer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HYBRID MANUFACTURING OF ACCESS TRANSISTORS FOR MEMORY
- Publication number 20240098965
- Publication date Mar 21, 2024
- Intel Corporation
- Abhishek A. Sharma
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20240098978
- Publication date Mar 21, 2024
- NANYA TECHNOLOGY CORPORATION
- Jhen-Yu TSAI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE HAVING GATE STRUCTURE AND METHOD FOR MANUFACTU...
- Publication number 20240090193
- Publication date Mar 14, 2024
- NANYA TECHNOLOGY CORPORATION
- Chung-Peng HAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH BURIED GATE STRUCTURES AND METHOD FOR PRE...
- Publication number 20240088248
- Publication date Mar 14, 2024
- NANYA TECHNOLOGY CORPORATION
- TSE-YAO HUANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CONDUCTIVE STRUCTURES
- Publication number 20240074153
- Publication date Feb 29, 2024
- Micron Technology, Inc.
- Daniel Billingsley
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FABRICATION METHOD OF A LATERAL 3D MEMORY DEVICE
- Publication number 20240074141
- Publication date Feb 29, 2024
- Micron Technology, Inc.
- Yoshitaka Nakamura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEROF
- Publication number 20240074152
- Publication date Feb 29, 2024
- NANYA TECHNOLOGY CORPORATION
- Chiang-Lin SHIH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICALLY STACKED STORAGE NODES AND ACCESS DEVICES WITH VERTICAL A...
- Publication number 20240064956
- Publication date Feb 22, 2024
- Micron Technology, Inc.
- Kamal M. Karda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DOPED DIELECTRIC MATERIAL
- Publication number 20240064962
- Publication date Feb 22, 2024
- Micron Technology, Inc.
- David K. Hwang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR FORMING THE SAME
- Publication number 20240057315
- Publication date Feb 15, 2024
- Fujian Jinhua Integrated Circuit Co., Ltd.
- Yu-Cheng Tung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RECESSED CHANNEL FIN INTEGRATION
- Publication number 20240057317
- Publication date Feb 15, 2024
- Micron Technology, Inc.
- Sangmin Hwang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DEVICES AND METHODS FOR DRAM LEAKAGE REDUCTION
- Publication number 20240049443
- Publication date Feb 8, 2024
- Applied Materials, Inc.
- Armin Saeedi Vahdat
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE AND METHOD OF MANUFACTURING THE SAME
- Publication number 20240049451
- Publication date Feb 8, 2024
- NANYA TECHNOLOGY CORPORATION
- YU-TING LIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE HAVING DOUBLE BIT CAPACITY AND METHOD FOR MANU...
- Publication number 20240023312
- Publication date Jan 18, 2024
- NANYA TECHNOLOGY CORPORATION
- YING-CHIEH LAI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE AND FORMING METHOD THEREOF
- Publication number 20240023317
- Publication date Jan 18, 2024
- CHANGXIN MEMORY TECHNOLOGIES, INC
- Guangsu SHAO
- H01 - BASIC ELECTRIC ELEMENTS

with at least one step of making the trench

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Semiconductor device

Semiconductor device

Integrated assemblies and methods of forming integrated assemblies

Method of manufacturing semiconductor device having buried gate ele...

Minimizing shorting between FinFET epitaxial regions

Semiconductor memory device having spacer capping pattern disposed...

Intermediate separation layers at the back-end-of-line

Semiconductor memory devices

Semiconductor devices and methods of fabricating the same

Memory device having a channel provided on a memory unit

Self-aligned etch back for vertical three dimensional (3D) memory

Memory structure having a hexagonal shaped bit line contact dispose...

Apparatus comprising compensation capacitors

Semiconductor device

Semiconductor device

Bonded unified semiconductor chips and fabrication and operation me...

Semiconductor device

Vertical contacts for semiconductor devices

Semiconductor memory structure and method for forming the same

Memory device and forming method thereof

Semiconductor memory device, method of manufacturing the same, and...

Semiconductor device and method for fabricating the same

Devices having a transistor and a capacitor along a common horizont...

Semiconductor devices having buried gates

DRAM with selective epitaxial cell transistor

Semiconductor memory device and method of fabricating the same

Method of testing a gap fill for DRAM

3D semiconductor memory device and structure

Buried word line structure and manufacturing method thereof

Semiconductor devices and methods of forming semiconductor devices

Patents Applicationslast 30 patents

DYNAMIC RANDOM-ACCESS MEMORY USING WIDE BAND GAP MATERIALS

MEMORY CELL WITH IMPROVED INSULATING STRUCTURE

MEMORY DEVICE HAVING ULTRA-LIGHTLY DOPED REGION

MEMORY DEVICE AND MANUFACTURING METHOD THEREOF

MEMORY DEVICE AND MANUFACTURING METHOD THEREOF

SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME

Vertical FinFet Formation Using Directional Deposition

SEMICONDUCTOR DEVICE AND METHOD FOR MAKING THE SAME

METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE HAVING WORD LINE EMBEDDED IN GATE TRENCH

SEMICONDUCTOR DEVICE INCLUDING 3D MEMORY STRUCTURE

BOTTOM CONTACT FORMATION FOR 4F2 VERTICAL DRAM

INVERTED FERROELECTRIC AND ANTIFERROLECETRIC CAPACITORS

SEMICONDUCTOR DEVICE HAVING SEMICONDUCTOR CHANNEL LAYER AND METHOD...

STAGGERED HORIZONTAL CELL ARCHITECTURE FOR MEMORY DEVICES

HYBRID MANUFACTURING OF ACCESS TRANSISTORS FOR MEMORY

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

SEMICONDUCTOR DEVICE HAVING GATE STRUCTURE AND METHOD FOR MANUFACTU...

SEMICONDUCTOR DEVICE WITH BURIED GATE STRUCTURES AND METHOD FOR PRE...

CONDUCTIVE STRUCTURES

FABRICATION METHOD OF A LATERAL 3D MEMORY DEVICE

SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEROF

VERTICALLY STACKED STORAGE NODES AND ACCESS DEVICES WITH VERTICAL A...

DOPED DIELECTRIC MATERIAL

SEMICONDUCTOR DEVICE AND METHOD FOR FORMING THE SAME

RECESSED CHANNEL FIN INTEGRATION

DEVICES AND METHODS FOR DRAM LEAKAGE REDUCTION

SEMICONDUCTOR STRUCTURE AND METHOD OF MANUFACTURING THE SAME

SEMICONDUCTOR DEVICE HAVING DOUBLE BIT CAPACITY AND METHOD FOR MANU...

SEMICONDUCTOR STRUCTURE AND FORMING METHOD THEREOF