with at least two independent gates

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H01L29/7855

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier

Current Industry

H01L29/7855with at least two independent gates

Industries

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Patents Grantslast 30 patents

Information Patent Grant
Method of manufacturing semiconductor device having a subtrate with...
- Patent number 12,207,460
- Issue date Jan 21, 2025
- Renesas Electronics Corporation
- Tomohiro Yamashita
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ferroelectric channel field effect transistor
- Patent number 12,191,375
- Issue date Jan 7, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Gerben Doornbos
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Non-planar I/O and logic semiconductor devices having different wor...
- Patent number 12,191,207
- Issue date Jan 7, 2025
- Intel Corporation
- Roman W. Olac-Vaw
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit structure
- Patent number 12,183,652
- Issue date Dec 31, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Jhon-Jhy Liaw
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices
- Patent number 12,176,417
- Issue date Dec 24, 2024
- Samsung Electronics Co., Ltd.
- Seungchan Yun
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device structure with metal gate stacks
- Patent number 12,166,105
- Issue date Dec 10, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Yi-Hsuan Hsiao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multi-gate device and related methods
- Patent number 12,166,036
- Issue date Dec 10, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Li-Yang Chuang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with S/D bottom isolation and methods of formi...
- Patent number 12,148,669
- Issue date Nov 19, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Xusheng Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Imaging element and imaging device with selection and amplication t...
- Patent number 12,136,635
- Issue date Nov 5, 2024
- SONY SEMICONDUCTOR SOLUTIONS CORPORATION
- Naohiko Kimizuka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory device and forming method thereof
- Patent number 12,133,392
- Issue date Oct 29, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Meng-Han Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Triple-gate MOS transistor and method for manufacturing such a tran...
- Patent number 12,125,913
- Issue date Oct 22, 2024
- STMicroelectronicsa (Rousset) SAS
- Abderrezak Marzaki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Independent gate length tunability for stacked transistors
- Patent number 12,107,168
- Issue date Oct 1, 2024
- International Business Machines Corporation
- Ruqiang Bao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Contact structure for stacked multi-gate device
- Patent number 12,107,169
- Issue date Oct 1, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Zhi-Chang Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated short channel omega gate FinFET and long channel FinFET
- Patent number 12,100,766
- Issue date Sep 24, 2024
- International Business Machines Corporation
- Alexander Reznicek
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with gate cut feature and method for forming t...
- Patent number 12,046,516
- Issue date Jul 23, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Huan-Chieh Su
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Imaging element and imaging device
- Patent number 12,046,605
- Issue date Jul 23, 2024
- SONY SEMICONDUCTOR SOLUTIONS CORPORATION
- Naohiko Kimizuka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Source/drain features
- Patent number 12,034,048
- Issue date Jul 9, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Ruei-Ping Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multi-threshold voltage devices and associated techniques and confi...
- Patent number 12,021,141
- Issue date Jun 25, 2024
- Sony Group Corporation
- Joseph M. Steigerwald
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Enhanced channel strain to reduce contact resistance in NMOS FET de...
- Patent number 12,021,082
- Issue date Jun 25, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Yu-Chang Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device including a gate structure
- Patent number 11,955,523
- Issue date Apr 9, 2024
- Samsung Electronics Co., Ltd.
- Namgyu Cho
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device structure and method for forming the same
- Patent number 11,935,958
- Issue date Mar 19, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Yu-Chao Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Geometry for threshold voltage tuning on semiconductor device
- Patent number 11,935,957
- Issue date Mar 19, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chung-Chiang Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FeFET with double gate structure
- Patent number 11,923,458
- Issue date Mar 5, 2024
- International Business Machines Corporation
- Takashi Ando
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistors having nanostructures
- Patent number 11,908,942
- Issue date Feb 20, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Cheng-Ting Chung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fin field-effect transistor device with composite liner for the Fin
- Patent number 11,894,464
- Issue date Feb 6, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Wan-Yi Kao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nanowire transistor structure and method of shaping
- Patent number 11,869,973
- Issue date Jan 9, 2024
- Intel Corporation
- Erica J. Thompson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with S/D bottom isolation and methods of formi...
- Patent number 11,854,896
- Issue date Dec 26, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Xusheng Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fabrication of long gate devices
- Patent number 11,855,175
- Issue date Dec 26, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Sung-Hsin Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical FET with contact to gate above active fin
- Patent number 11,855,191
- Issue date Dec 26, 2023
- International Business Machines Corporation
- Brent Anderson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Isolation features and methods of fabricating the same
- Patent number 11,843,028
- Issue date Dec 12, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- I-Wen Wu
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
TRIPLE-GATE MOS TRANSISTOR AND METHOD FOR MANUFACTURING SUCH A TRAN...
- Publication number 20250015188
- Publication date Jan 9, 2025
- STMicroelectronics (Rousset) SAS
- Abderrezak MARZAKI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY DEVICE AND FORMING METHOD THEREOF
- Publication number 20240397729
- Publication date Nov 28, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Meng-Han Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH S/D BOTTOM ISOLATION AND METHODS OF FORMI...
- Publication number 20240379442
- Publication date Nov 14, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Xusheng Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CONTACT STRUCTURE FOR STACKED MULTI-GATE DEVICE
- Publication number 20240379855
- Publication date Nov 14, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Zhi-Chang Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD-EFFECT TRANSISTOR AND METHOD FOR PRODUCING A FIELD-EFFECT TRA...
- Publication number 20240372003
- Publication date Nov 7, 2024
- ROBERT BOSCH GmbH
- Daniel Krebs
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH GATE CUT FEATURE AND METHOD FOR FORMING T...
- Publication number 20240347389
- Publication date Oct 17, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Huan-Chieh Su
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20240339540
- Publication date Oct 10, 2024
- Samsung Electronics Co., Ltd.
- Beom Jin KIM
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTI-THRESHOLD VOLTAGE DEVICES AND ASSOCIATED TECHNIQUES AND CONFI...
- Publication number 20240322037
- Publication date Sep 26, 2024
- SONY GROUP CORPORATION
- Joseph M. Steigerwald
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE HAVING DEVICE ISOLATION LAYERS
- Publication number 20240290833
- Publication date Aug 29, 2024
- Samsung Electronics Co., Ltd.
- Minho CHOI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELF-ALIGNED GATE ENDCAP (SAGE) ARCHITECTURES WITH VERTICAL SIDEWALLS
- Publication number 20240243202
- Publication date Jul 18, 2024
- Intel Corporation
- Ritesh K. DAS
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20240194786
- Publication date Jun 13, 2024
- Samsung Electronics Co., Ltd.
- Dong Suk SHIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTORS HAVING NANOSTRUCTURES
- Publication number 20240194787
- Publication date Jun 13, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Cheng-Ting CHUNG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DOUBLE-GATE FOUR-TERMINAL SEMICONDUCTOR COMPONENT WITH FIN-TYPE CHA...
- Publication number 20240186418
- Publication date Jun 6, 2024
- Brandenburgische Technische Universität Cottbus-Senftenberg, Körperschaft des...
- Ulrich WULF
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE STRUCTURE AND METHOD FOR FORMING THE SAME
- Publication number 20240186417
- Publication date Jun 6, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yu-Chao LIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Fin Field-Effect Transistor Device with Composite Liner for the Fin
- Publication number 20240178321
- Publication date May 30, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Wan-Yi Kao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR WITH FIN STRUCTURE AND NANOSHEET AND FABRICATING METHOD...
- Publication number 20240162291
- Publication date May 16, 2024
- UNITED MICROELECTRONICS CORP.
- Ching-In Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE STRUCTURE AND METHOD FOR FORMING THE SAME
- Publication number 20240105851
- Publication date Mar 28, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Jiefeng Jeff LIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH S/D BOTTOM ISOLATION AND METHODS OF FORMI...
- Publication number 20240105517
- Publication date Mar 28, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Xusheng Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
3D UFET DEVICES AND METHODS FOR MANUFACTURING THE SAME
- Publication number 20240105777
- Publication date Mar 28, 2024
- TOKYO ELECTRON LIMITED
- H. Jim FULFORD
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NANOWIRE TRANSISTOR STRUCTURE AND METHOD OF SHAPING
- Publication number 20240088296
- Publication date Mar 14, 2024
- Intel Corporation
- Erica J. Thompson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Performance Optimization By Sizing Gates And Source/Drain Contacts...
- Publication number 20240072137
- Publication date Feb 29, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Li-Hui CHEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FABRICATION OF GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING...
- Publication number 20240072145
- Publication date Feb 29, 2024
- Intel Corporation
- Megan BECK
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MINIMIZING SHORTING BETWEEN FINFET EPITAXIAL REGIONS
- Publication number 20240055426
- Publication date Feb 15, 2024
- TESSERA LLC
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE STRUCTURE WITH METAL GATE STACKS
- Publication number 20240047557
- Publication date Feb 8, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yi-Hsuan HSIAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NON-PLANAR I/O AND LOGIC SEMICONDUCTOR DEVICES HAVING DIFFERENT WOR...
- Publication number 20240038592
- Publication date Feb 1, 2024
- Intel Corporation
- ROMAN W. OLAC-VAW
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
IMAGING ELEMENT AND IMAGING DEVICE
- Publication number 20240021630
- Publication date Jan 18, 2024
- Sony Semiconductor Solutions Corporation
- NAOHIKO KIMIZUKA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CONTACT STRUCTURE FOR STACKED MULTI-GATE DEVICE
- Publication number 20240006536
- Publication date Jan 4, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Zhi-Chang Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME
- Publication number 20240006535
- Publication date Jan 4, 2024
- Taiwan Semiconductor Manufacturing company Ltd.
- TZU-GING LIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FORMING MULTI-GATE SEMICONDUCTOR STRUCTURE
- Publication number 20230420567
- Publication date Dec 28, 2023
- Taiwan Semiconductor Manufacturing company Ltd.
- CHUN-MING YANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FERROELECTRIC CHANNEL FIELD EFFECT TRANSISTOR
- Publication number 20230378309
- Publication date Nov 23, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Gerben Doornbos
- H01 - BASIC ELECTRIC ELEMENTS

with at least two independent gates

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Method of manufacturing semiconductor device having a subtrate with...

Ferroelectric channel field effect transistor

Non-planar I/O and logic semiconductor devices having different wor...

Integrated circuit structure

Semiconductor devices

Semiconductor device structure with metal gate stacks

Multi-gate device and related methods

Semiconductor device with S/D bottom isolation and methods of formi...

Imaging element and imaging device with selection and amplication t...

Memory device and forming method thereof

Triple-gate MOS transistor and method for manufacturing such a tran...

Independent gate length tunability for stacked transistors

Contact structure for stacked multi-gate device

Integrated short channel omega gate FinFET and long channel FinFET

Semiconductor device with gate cut feature and method for forming t...

Imaging element and imaging device

Source/drain features

Multi-threshold voltage devices and associated techniques and confi...

Enhanced channel strain to reduce contact resistance in NMOS FET de...

Semiconductor device including a gate structure

Semiconductor device structure and method for forming the same

Geometry for threshold voltage tuning on semiconductor device

FeFET with double gate structure

Transistors having nanostructures

Fin field-effect transistor device with composite liner for the Fin

Nanowire transistor structure and method of shaping

Semiconductor device with S/D bottom isolation and methods of formi...

Fabrication of long gate devices

Vertical FET with contact to gate above active fin

Isolation features and methods of fabricating the same

Patents Applicationslast 30 patents

TRIPLE-GATE MOS TRANSISTOR AND METHOD FOR MANUFACTURING SUCH A TRAN...

MEMORY DEVICE AND FORMING METHOD THEREOF

SEMICONDUCTOR DEVICE WITH S/D BOTTOM ISOLATION AND METHODS OF FORMI...

CONTACT STRUCTURE FOR STACKED MULTI-GATE DEVICE

FIELD-EFFECT TRANSISTOR AND METHOD FOR PRODUCING A FIELD-EFFECT TRA...

SEMICONDUCTOR DEVICE WITH GATE CUT FEATURE AND METHOD FOR FORMING T...

SEMICONDUCTOR DEVICE

MULTI-THRESHOLD VOLTAGE DEVICES AND ASSOCIATED TECHNIQUES AND CONFI...

SEMICONDUCTOR DEVICE HAVING DEVICE ISOLATION LAYERS

SELF-ALIGNED GATE ENDCAP (SAGE) ARCHITECTURES WITH VERTICAL SIDEWALLS

SEMICONDUCTOR DEVICE

TRANSISTORS HAVING NANOSTRUCTURES

DOUBLE-GATE FOUR-TERMINAL SEMICONDUCTOR COMPONENT WITH FIN-TYPE CHA...

SEMICONDUCTOR DEVICE STRUCTURE AND METHOD FOR FORMING THE SAME

Fin Field-Effect Transistor Device with Composite Liner for the Fin

TRANSISTOR WITH FIN STRUCTURE AND NANOSHEET AND FABRICATING METHOD...

SEMICONDUCTOR DEVICE STRUCTURE AND METHOD FOR FORMING THE SAME

SEMICONDUCTOR DEVICE WITH S/D BOTTOM ISOLATION AND METHODS OF FORMI...

3D UFET DEVICES AND METHODS FOR MANUFACTURING THE SAME

NANOWIRE TRANSISTOR STRUCTURE AND METHOD OF SHAPING

Performance Optimization By Sizing Gates And Source/Drain Contacts...

FABRICATION OF GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING...

MINIMIZING SHORTING BETWEEN FINFET EPITAXIAL REGIONS

SEMICONDUCTOR DEVICE STRUCTURE WITH METAL GATE STACKS

NON-PLANAR I/O AND LOGIC SEMICONDUCTOR DEVICES HAVING DIFFERENT WOR...

IMAGING ELEMENT AND IMAGING DEVICE

CONTACT STRUCTURE FOR STACKED MULTI-GATE DEVICE

SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME

METHOD FOR FORMING MULTI-GATE SEMICONDUCTOR STRUCTURE

FERROELECTRIC CHANNEL FIELD EFFECT TRANSISTOR