with at least two independent gates

Industry

CPC
H01L29/7855

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Parent Industries

HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier

Current Industry

H01L29/7855with at least two independent gates

Industries

Patents Grantslast 30 patents

Information Patent Grant
Semiconductor device including a gate structure
- Patent number 11,955,523
- Issue date Apr 9, 2024
- Samsung Electronics Co., Ltd.
- Namgyu Cho
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device structure and method for forming the same
- Patent number 11,935,958
- Issue date Mar 19, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Yu-Chao Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Geometry for threshold voltage tuning on semiconductor device
- Patent number 11,935,957
- Issue date Mar 19, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chung-Chiang Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FeFET with double gate structure
- Patent number 11,923,458
- Issue date Mar 5, 2024
- International Business Machines Corporation
- Takashi Ando
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistors having nanostructures
- Patent number 11,908,942
- Issue date Feb 20, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Cheng-Ting Chung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fin field-effect transistor device with composite liner for the Fin
- Patent number 11,894,464
- Issue date Feb 6, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Wan-Yi Kao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nanowire transistor structure and method of shaping
- Patent number 11,869,973
- Issue date Jan 9, 2024
- Intel Corporation
- Erica J. Thompson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with S/D bottom isolation and methods of formi...
- Patent number 11,854,896
- Issue date Dec 26, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Xusheng Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fabrication of long gate devices
- Patent number 11,855,175
- Issue date Dec 26, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Sung-Hsin Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical FET with contact to gate above active fin
- Patent number 11,855,191
- Issue date Dec 26, 2023
- International Business Machines Corporation
- Brent Anderson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Isolation features and methods of fabricating the same
- Patent number 11,843,028
- Issue date Dec 12, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- I-Wen Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device structure with metal gate stacks
- Patent number 11,830,926
- Issue date Nov 28, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Yi-Hsuan Hsiao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Non-planar I/O and logic semiconductor devices having different wor...
- Patent number 11,823,954
- Issue date Nov 21, 2023
- Intel Corporation
- Roman W. Olac-Vaw
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit structure including multi-length source/drain co...
- Patent number 11,791,337
- Issue date Oct 17, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Jhon-Jhy Liaw
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ferroelectric channel field effect transistor
- Patent number 11,784,234
- Issue date Oct 10, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Gerben Doornbos
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ferroelectric memory and memory array device with multiple independ...
- Patent number 11,785,778
- Issue date Oct 10, 2023
- National Cheng Kung University
- Darsen Duane Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Subfin leakage suppression using fixed charge
- Patent number 11,784,239
- Issue date Oct 10, 2023
- Intel Corporation
- Sean T. Ma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Source/drain features
- Patent number 11,749,719
- Issue date Sep 5, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Ruei-Ping Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 11,728,434
- Issue date Aug 15, 2023
- Samsung Electronics Co., Ltd.
- Seok Hoon Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Metal gate stacks and methods of fabricating the same in multi-gate...
- Patent number 11,721,695
- Issue date Aug 8, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Jhon Jhy Liaw
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Growth process and methods thereof
- Patent number 11,710,781
- Issue date Jul 25, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Pin Chu Liang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 11,699,701
- Issue date Jul 11, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Che-Cheng Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Contact structure for stacked multi-gate device
- Patent number 11,699,760
- Issue date Jul 11, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Zhi-Chang Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of integrating multiple gate dielectric transistors on a tr...
- Patent number 11,695,008
- Issue date Jul 4, 2023
- Intel Corporation
- Curtis Tsai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multi-gate device and related methods
- Patent number 11,688,736
- Issue date Jun 27, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Li-Yang Chuang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices
- Patent number 11,670,701
- Issue date Jun 6, 2023
- Samsung Electronics Co., Ltd.
- Seungchan Yun
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Minimizing shorting between FinFET epitaxial regions
- Patent number 11,664,375
- Issue date May 30, 2023
- TESSERA LLC
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of forming a semiconductor device comprising a channel mate...
- Patent number 11,652,173
- Issue date May 16, 2023
- Micron Technology, Inc.
- Gurtej S. Sandhu
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Gate-all-around field effect transistor and method for manufacturin...
- Patent number 11,637,193
- Issue date Apr 25, 2023
- Semiconductor Manufacturing International (Beijing) Corporation
- Poren Tang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices and methods of fabricating the same
- Patent number 11,621,353
- Issue date Apr 4, 2023
- Samsung Electronics Co., Ltd.
- Woo Bin Song
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SEMICONDUCTOR DEVICE STRUCTURE AND METHOD FOR FORMING THE SAME
- Publication number 20240105851
- Publication date Mar 28, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Jiefeng Jeff LIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
3D UFET DEVICES AND METHODS FOR MANUFACTURING THE SAME
- Publication number 20240105777
- Publication date Mar 28, 2024
- TOKYO ELECTRON LIMITED
- H. Jim FULFORD
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH S/D BOTTOM ISOLATION AND METHODS OF FORMI...
- Publication number 20240105517
- Publication date Mar 28, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Xusheng Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NANOWIRE TRANSISTOR STRUCTURE AND METHOD OF SHAPING
- Publication number 20240088296
- Publication date Mar 14, 2024
- Intel Corporation
- Erica J. Thompson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Performance Optimization By Sizing Gates And Source/Drain Contacts...
- Publication number 20240072137
- Publication date Feb 29, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Li-Hui CHEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FABRICATION OF GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING...
- Publication number 20240072145
- Publication date Feb 29, 2024
- Intel Corporation
- Megan BECK
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MINIMIZING SHORTING BETWEEN FINFET EPITAXIAL REGIONS
- Publication number 20240055426
- Publication date Feb 15, 2024
- TESSERA LLC
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE STRUCTURE WITH METAL GATE STACKS
- Publication number 20240047557
- Publication date Feb 8, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yi-Hsuan HSIAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NON-PLANAR I/O AND LOGIC SEMICONDUCTOR DEVICES HAVING DIFFERENT WOR...
- Publication number 20240038592
- Publication date Feb 1, 2024
- Intel Corporation
- ROMAN W. OLAC-VAW
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
IMAGING ELEMENT AND IMAGING DEVICE
- Publication number 20240021630
- Publication date Jan 18, 2024
- Sony Semiconductor Solutions Corporation
- NAOHIKO KIMIZUKA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CONTACT STRUCTURE FOR STACKED MULTI-GATE DEVICE
- Publication number 20240006536
- Publication date Jan 4, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Zhi-Chang Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME
- Publication number 20240006535
- Publication date Jan 4, 2024
- Taiwan Semiconductor Manufacturing company Ltd.
- TZU-GING LIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FORMING MULTI-GATE SEMICONDUCTOR STRUCTURE
- Publication number 20230420567
- Publication date Dec 28, 2023
- Taiwan Semiconductor Manufacturing company Ltd.
- CHUN-MING YANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FERROELECTRIC CHANNEL FIELD EFFECT TRANSISTOR
- Publication number 20230378309
- Publication date Nov 23, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Gerben Doornbos
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT STRUCTURE INCLUDING MULTI-LENGTH SOURCE/DRAIN CO...
- Publication number 20230378177
- Publication date Nov 23, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Jhon-Jhy LIAW
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SOURCE/DRAIN FEATURES
- Publication number 20230369405
- Publication date Nov 16, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Ruei-Ping Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METAL GATE STACKS AND METHODS OF FABRICATING THE SAME IN MULTI-GATE...
- Publication number 20230369323
- Publication date Nov 16, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Jhon Jhy Liaw
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTI-GATE DEVICE AND RELATED METHODS
- Publication number 20230335553
- Publication date Oct 19, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Li-Yang CHUANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY DEVICE AND FORMING METHOD THEREOF
- Publication number 20230328998
- Publication date Oct 12, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Meng-Han Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES
- Publication number 20230317824
- Publication date Oct 5, 2023
- Samsung Electronics Co., Ltd.
- SEUNGCHAN YUN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NON-EPITAXIAL ELECTRICAL COUPLING BETWEEN A FRONT SIDE TRENCH CONNE...
- Publication number 20230317850
- Publication date Oct 5, 2023
- Intel Corporation
- Shaun MILLS
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Growth Process And Methods Thereof
- Publication number 20230317831
- Publication date Oct 5, 2023
- TAIWAN SEMICONDUCTOR MANUFACTURING CO. LTD.
- Pin Chu Liang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS OF INTEGRATING MULTIPLE GATE DIELECTRIC TRANSISTORS ON A TR...
- Publication number 20230299087
- Publication date Sep 21, 2023
- Intel Corporation
- Curtis TSAI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH GATE CUT FEATURE AND METHOD FOR FORMING T...
- Publication number 20230253257
- Publication date Aug 10, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Huan-Chieh Su
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE STRUCTURE AND METHOD FOR FORMING THE SAME
- Publication number 20230231054
- Publication date Jul 20, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yu-Chao LIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
UPPER AND LOWER GATE CONFIGURATIONS OF MONOLITHIC STACKED FINFET TR...
- Publication number 20230215949
- Publication date Jul 6, 2023
- International Business Machines Corporation
- Chen Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE INCLUDING A GATE STRUCTURE
- Publication number 20230197806
- Publication date Jun 22, 2023
- Samsung Electronics Co., Ltd.
- Namgyu Cho
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ENHANCED CHANNEL STRAIN TO REDUCE CONTACT RESISTANCE IN NMOS FET DE...
- Publication number 20230187447
- Publication date Jun 15, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yu-Chang LIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE INCLUDING OVERPASS-TYPE CHANNEL
- Publication number 20230153590
- Publication date May 18, 2023
- Seoul National University R&DB Foundation
- Byung-Gook PARK
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
INTEGRATED SHORT CHANNEL OMEGA GATE FINFET AND LONG CHANNEL FINFET
- Publication number 20230135321
- Publication date May 4, 2023
- International Business Machines Corporation
- Alexander Reznicek
- H01 - BASIC ELECTRIC ELEMENTS

with at least two independent gates

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Semiconductor device including a gate structure

Semiconductor device structure and method for forming the same

Geometry for threshold voltage tuning on semiconductor device

FeFET with double gate structure

Transistors having nanostructures

Fin field-effect transistor device with composite liner for the Fin

Nanowire transistor structure and method of shaping

Semiconductor device with S/D bottom isolation and methods of formi...

Fabrication of long gate devices

Vertical FET with contact to gate above active fin

Isolation features and methods of fabricating the same

Semiconductor device structure with metal gate stacks

Non-planar I/O and logic semiconductor devices having different wor...

Integrated circuit structure including multi-length source/drain co...

Ferroelectric channel field effect transistor

Ferroelectric memory and memory array device with multiple independ...

Subfin leakage suppression using fixed charge

Source/drain features

Semiconductor device

Metal gate stacks and methods of fabricating the same in multi-gate...

Growth process and methods thereof

Semiconductor device

Contact structure for stacked multi-gate device

Methods of integrating multiple gate dielectric transistors on a tr...

Multi-gate device and related methods

Semiconductor devices

Minimizing shorting between FinFET epitaxial regions

Methods of forming a semiconductor device comprising a channel mate...

Gate-all-around field effect transistor and method for manufacturin...

Semiconductor devices and methods of fabricating the same

Patents Applicationslast 30 patents

SEMICONDUCTOR DEVICE STRUCTURE AND METHOD FOR FORMING THE SAME

3D UFET DEVICES AND METHODS FOR MANUFACTURING THE SAME

SEMICONDUCTOR DEVICE WITH S/D BOTTOM ISOLATION AND METHODS OF FORMI...

NANOWIRE TRANSISTOR STRUCTURE AND METHOD OF SHAPING

Performance Optimization By Sizing Gates And Source/Drain Contacts...

FABRICATION OF GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING...

MINIMIZING SHORTING BETWEEN FINFET EPITAXIAL REGIONS

SEMICONDUCTOR DEVICE STRUCTURE WITH METAL GATE STACKS

NON-PLANAR I/O AND LOGIC SEMICONDUCTOR DEVICES HAVING DIFFERENT WOR...

IMAGING ELEMENT AND IMAGING DEVICE

CONTACT STRUCTURE FOR STACKED MULTI-GATE DEVICE

SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME

METHOD FOR FORMING MULTI-GATE SEMICONDUCTOR STRUCTURE

FERROELECTRIC CHANNEL FIELD EFFECT TRANSISTOR

INTEGRATED CIRCUIT STRUCTURE INCLUDING MULTI-LENGTH SOURCE/DRAIN CO...

SOURCE/DRAIN FEATURES

METAL GATE STACKS AND METHODS OF FABRICATING THE SAME IN MULTI-GATE...

MULTI-GATE DEVICE AND RELATED METHODS

MEMORY DEVICE AND FORMING METHOD THEREOF

SEMICONDUCTOR DEVICES

NON-EPITAXIAL ELECTRICAL COUPLING BETWEEN A FRONT SIDE TRENCH CONNE...

Growth Process And Methods Thereof

METHODS OF INTEGRATING MULTIPLE GATE DIELECTRIC TRANSISTORS ON A TR...

SEMICONDUCTOR DEVICE WITH GATE CUT FEATURE AND METHOD FOR FORMING T...

SEMICONDUCTOR DEVICE STRUCTURE AND METHOD FOR FORMING THE SAME

UPPER AND LOWER GATE CONFIGURATIONS OF MONOLITHIC STACKED FINFET TR...

SEMICONDUCTOR DEVICE INCLUDING A GATE STRUCTURE

ENHANCED CHANNEL STRAIN TO REDUCE CONTACT RESISTANCE IN NMOS FET DE...

SEMICONDUCTOR DEVICE INCLUDING OVERPASS-TYPE CHANNEL

INTEGRATED SHORT CHANNEL OMEGA GATE FINFET AND LONG CHANNEL FINFET