with both emitter and collector contacts in the same substrate side

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H01L29/7398

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier

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H01L29/7398with both emitter and collector contacts in the same substrate side

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Patents Grantslast 30 patents

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Power device having electrodes on a top surface thereof
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- IXYS Corporation
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- Issue date Aug 27, 2002
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Semiconductor device and fabrication method thereof
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- Issue date May 8, 2001
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- Publication number 20200044064
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- Infineon Technologies Dresden GmbH & Co. KG
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- Publication number 20180033884
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- Vanguard International Semiconductor Corporation
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- Sanyo Electric Co., Ltd.
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- NISSAN MOTOR CO., LTD.
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- H01 - BASIC ELECTRIC ELEMENTS

with both emitter and collector contacts in the same substrate side

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Semiconductor device, preparation method therefor and electrical eq...

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Power semiconductor device having overvoltage protection

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Semiconductor device including a gate contact structure

Power semiconductor device

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Semiconductor device and method of manufacturing same

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Semiconductor device and method

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Semiconductor device and fabrication method thereof

Patents Applicationslast 30 patents

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SEMICONDUCTOR DEVICE AND ELECTRONIC DEVICE

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SEMICONDUCTOR DEVICE

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