with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer

Industry

CPC
H01L29/7786

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Parent Industries

HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier

Current Industry

H01L29/7786with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer

Industries

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Patents Grantslast 30 patents

Information Patent Grant
Method for manufacturing semiconductor device
- Patent number 12,300,510
- Issue date May 13, 2025
- Tokyo Electron Limited
- Chun-Huai Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
GaN HEMT transistor with impact energy release capability for use i...
- Patent number 12,300,746
- Issue date May 13, 2025
- Nanjing University
- Feng Zhou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Enhancement-mode semiconductor device
- Patent number 12,300,725
- Issue date May 13, 2025
- ENKRIS SEMICONDUCTOR, INC.
- Kai Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Mixed material power devices and driver circuits
- Patent number 12,294,356
- Issue date May 6, 2025
- CAMBRIDGE GAN DEVICES LIMITED
- Florin Udrea
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and electronic equipment
- Patent number 12,283,592
- Issue date Apr 22, 2025
- SONY SEMICONDUCTOR SOLUTIONS CORPORATION
- Shinya Morita
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High-electron mobility transistor and method for fabricating the same
- Patent number 12,278,282
- Issue date Apr 15, 2025
- United Microelectronics Corp.
- Jian-Li Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
HEMT transistor including an improved gate region and related manuf...
- Patent number 12,278,283
- Issue date Apr 15, 2025
- STMicroelectronics S.r.l.
- Ferdinando Iucolano
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for producing nitride mesas each intended to form an electro...
- Patent number 12,278,224
- Issue date Apr 15, 2025
- Commissariat a l'Energie Atomique et Aux Energies Alternatives
- Guy Feuillet
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Source leakage current suppression by source surrounding gate struc...
- Patent number 12,278,272
- Issue date Apr 15, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Aurelien Gauthier Brun
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High electron mobility transistor
- Patent number 12,278,281
- Issue date Apr 15, 2025
- Samsung Electronics Co., Ltd.
- Sunkyu Hwang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Selective laser annealing method
- Patent number 12,278,275
- Issue date Apr 15, 2025
- Infineon Technologies AG
- Albert Birner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device comprising a drain back contact electrode, met...
- Patent number 12,272,743
- Issue date Apr 8, 2025
- GPOWER SEMICONDUCTOR, INC.
- Junfeng Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nitride semiconductor device
- Patent number 12,272,742
- Issue date Apr 8, 2025
- Rohm Co., Ltd.
- Hirotaka Otake
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nitride semiconductor including multi-portion nitride region
- Patent number 12,266,698
- Issue date Apr 1, 2025
- Kabushiki Kaisha Toshiba
- Toshiki Hikosaka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High electron mobility transistor and method for forming the same
- Patent number 12,266,701
- Issue date Apr 1, 2025
- United Microelectronics Corp.
- Chih-Tung Yeh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for forming the same
- Patent number 12,266,723
- Issue date Apr 1, 2025
- United Microelectronics Corp.
- Chi-Hsiao Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Voltage-controlled switching device with resistive path
- Patent number 12,266,680
- Issue date Apr 1, 2025
- Infineon Technologies Dresden GmbH & Co. KG
- Christian Philipp Sandow
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Manufacturing method of semiconductor device
- Patent number 12,266,696
- Issue date Apr 1, 2025
- United Microelectronics Corp.
- Chih-Tung Yeh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field effect transistor with multiple stepped field plate
- Patent number 12,266,721
- Issue date Apr 1, 2025
- Wolfspeed, Inc.
- Jia Guo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Hemt with plate over channel layer
- Patent number 12,266,722
- Issue date Apr 1, 2025
- United Microelectronics Corp.
- Po-Yu Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing semiconductor device
- Patent number 12,259,654
- Issue date Mar 25, 2025
- Sumitomo Electric Industries, Ltd.
- Tadashi Watanabe
- G03 - PHOTOGRAPHY CINEMATOGRAPHY ELECTROGRAPHY HOLOGRAPHY
Information Patent Grant
Gate metal-insulator-field plate metal integrated circuit capacitor...
- Patent number 12,261,168
- Issue date Mar 25, 2025
- Efficient Power Conversion Corporation
- Jianjun Cao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Aluminum-based gallium nitride integrated circuits
- Patent number 12,261,134
- Issue date Mar 25, 2025
- Analog Devices, Inc.
- Daniel Piedra
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Extrinsic field termination structures for improving reliability of...
- Patent number 12,261,207
- Issue date Mar 25, 2025
- MACOM Technology Solutions Holdings, Inc.
- Allen W. Hanson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field effect transistors with dual field plates
- Patent number 12,255,235
- Issue date Mar 18, 2025
- GLOBALFOUNDRIES U.S. Inc.
- Johnatan Avraham Kantarovsky
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device including plurality of gate fingers with vario...
- Patent number 12,249,543
- Issue date Mar 11, 2025
- Sumitomo Electric Industries, Ltd.
- Kenya Nishiguchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Enhancement-mode high-electron-mobility transistor
- Patent number 12,249,644
- Issue date Mar 11, 2025
- STMICROELECTRONICS INTERNATIONAL N.V.
- Matthieu Nongaillard
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gallium nitride device for high frequency and high power applications
- Patent number 12,249,631
- Issue date Mar 11, 2025
- Analog Devices, Inc.
- Puneet Srivastava
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having nickel oxide film on gate electrode
- Patent number 12,243,927
- Issue date Mar 4, 2025
- Sumitomo Electric Device Innovations, Inc.
- Tomohiro Yoshida
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
P-GaN high electron mobility transistor (HEMT) with MOS2-based 2D b...
- Patent number 12,243,928
- Issue date Mar 4, 2025
- IMAM MOHAMMAD IBN SAUD ISLAMIC UNIVERSITY
- Ghada A. Khouqeer
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
HIGH ELECTRON MOBILITY TRANSISTOR AND METHOD FOR MANUFACTURING THE...
- Publication number 20250072025
- Publication date Feb 27, 2025
- National Yang Ming Chiao Tung University
- Edward Yi CHANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
COMPOUND SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREOF
- Publication number 20250072075
- Publication date Feb 27, 2025
- UNITED MICROELECTRONICS CORP.
- Da-Jun Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR WITH THERMAL PLUG
- Publication number 20250072024
- Publication date Feb 27, 2025
- GLOBALFOUNDRIES U.S. Inc.
- Alvin J. Joseph
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TYPE III-V SEMICONDUCTOR DEVICE WITH MULTI-LAYER BARRIER REGION
- Publication number 20250072033
- Publication date Feb 27, 2025
- Infineon Technologies Austria AG
- Korbinian Reiser
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NITRIDE SEMICONDUCTOR DEVICE
- Publication number 20250072088
- Publication date Feb 27, 2025
- ROHM CO., LTD.
- Tomonori KATO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
- Publication number 20250072109
- Publication date Feb 27, 2025
- INNOSCIENCE (SUZHOU) SEMICONDUCTOR CO., LTD.
- Sichao LI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR POWER DEVICE
- Publication number 20250072032
- Publication date Feb 27, 2025
- Industrial Technology Research Institute
- Shin-Yi Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20250063752
- Publication date Feb 20, 2025
- Kabushiki Kaisha Toshiba
- Ikuo FUJIWARA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GALLIUM NITRIDE TRANSISTOR WITH A DOPED REGION
- Publication number 20250063755
- Publication date Feb 20, 2025
- TEXAS INSTRUMENTS INCORPORATED
- Dong Seup LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NITRIDE SEMICONDUCTOR SUBSTRATE AND METHOD FOR PRODUCING SAME
- Publication number 20250059675
- Publication date Feb 20, 2025
- Shin-Etsu Handotai Co., Ltd.
- Keitaro TSUCHIYA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NITRIDE SEMICONDUCTOR DEVICE COMPRISING LAYERED STRUCTURE OF ACTIVE...
- Publication number 20250063787
- Publication date Feb 20, 2025
- Rohm Co., Ltd.
- Yosuke HATA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ELECTRONIC DEVICE
- Publication number 20250063801
- Publication date Feb 20, 2025
- Innolux Corporation
- Chin-Lung Ting
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
P TYPE GALLIUM NITRIDE CONFORMAL EPITAXIAL STRUCTURE OVER THICK BUF...
- Publication number 20250063756
- Publication date Feb 20, 2025
- TEXAS INSTRUMENTS INCORPORATED
- Tatsuya Tominari
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH SELF-ALIGNED GATE AND FIELD PLATE AND MET...
- Publication number 20250063753
- Publication date Feb 20, 2025
- NXP USA, Inc.
- Philippe Renaud
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE, METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE...
- Publication number 20250063754
- Publication date Feb 20, 2025
- Fujitsu Limited
- Kenji HOMMA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
EPITAXIAL OXIDE MATERIALS, STRUCTURES, AND DEVICES
- Publication number 20250056927
- Publication date Feb 13, 2025
- Silanna UV Technologies Pte Ltd
- Petar Atanackovic
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DEVICES FOR INTEGRATED FRONT-END CIRCUITS
- Publication number 20250056878
- Publication date Feb 13, 2025
- MONDE Wireless Inc.
- Matthew Guidry
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH ELECTRON MOBILITY TRANSISTOR AND METHOD OF MANUFACTURING THE SAME
- Publication number 20250056827
- Publication date Feb 13, 2025
- Samsung Electronics Co., Ltd.
- Jaejoon OH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20250056826
- Publication date Feb 13, 2025
- Kabushiki Kaisha Toshiba
- Yosuke KAJIWARA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH GATE ELECTRICAL CONTACT FORMING JUNCTIONS...
- Publication number 20250048667
- Publication date Feb 6, 2025
- TEXAS INSTRUMENTS INCORPORATED
- Ujwal Radhakrishna
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NITRIDE-BASED SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE...
- Publication number 20250048668
- Publication date Feb 6, 2025
- INNOSCIENCE (SUZHOU) TECHNOLOGY CO., LTD.
- Liuchang MENG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE HAVING A DOPED REGION UNDERLYING A GATE LAYER...
- Publication number 20250040171
- Publication date Jan 30, 2025
- TEXAS INSTRUMENTS INCORPORATED
- Dong Seup LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20250040174
- Publication date Jan 30, 2025
- Kabushiki Kaisha Toshiba
- Jumpei TAJIMA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR ELECTRONIC DEVICE INTEGRATING AN ELECTRONIC COMPONENT...
- Publication number 20250040210
- Publication date Jan 30, 2025
- STMicroelectronics International N.V.
- Riccardo DEPETRO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH ELECTRON MOBILITY TRANSISTOR AND FABRICATION METHOD THEREOF
- Publication number 20250040220
- Publication date Jan 30, 2025
- Vanguard International Semiconductor Corporation
- Chen-Dong Tzou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH-ELECTRON-MOBILITY TRANSISTOR
- Publication number 20250040221
- Publication date Jan 30, 2025
- GLOBALFOUNDRIES U.S. Inc.
- Johnatan A. KANTAROVSKY
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DOUBLE-CHANNEL HEMT DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20250040173
- Publication date Jan 30, 2025
- STMicroelectronics S.r.l.
- Ferdinando IUCOLANO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MANUFACTURING PROCESS OF A SEMICONDUCTOR ELECTRONIC DEVICE INTEGRAT...
- Publication number 20250040163
- Publication date Jan 30, 2025
- STMicroelectronics International N.V.
- Riccardo DEPETRO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GALLIUM NITRIDE (GAN) THREE-DIMENSIONAL INTEGRATED CIRCUIT TECHNOLOGY
- Publication number 20250040231
- Publication date Jan 30, 2025
- Intel Corporation
- Han Wui THEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR ELECTRONIC DEVICE COMPRISING AN ELECTRONIC COMPONENT...
- Publication number 20250040244
- Publication date Jan 30, 2025
- STMicroelectronics International N.V.
- Riccardo DEPETRO
- H01 - BASIC ELECTRIC ELEMENTS

with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Method for manufacturing semiconductor device

GaN HEMT transistor with impact energy release capability for use i...

Enhancement-mode semiconductor device

Mixed material power devices and driver circuits

Semiconductor device and electronic equipment

High-electron mobility transistor and method for fabricating the same

HEMT transistor including an improved gate region and related manuf...

Method for producing nitride mesas each intended to form an electro...

Source leakage current suppression by source surrounding gate struc...

High electron mobility transistor

Selective laser annealing method

Semiconductor device comprising a drain back contact electrode, met...

Nitride semiconductor device

Nitride semiconductor including multi-portion nitride region

High electron mobility transistor and method for forming the same

Semiconductor device and method for forming the same

Voltage-controlled switching device with resistive path

Manufacturing method of semiconductor device

Field effect transistor with multiple stepped field plate

Hemt with plate over channel layer

Method for manufacturing semiconductor device

Gate metal-insulator-field plate metal integrated circuit capacitor...

Aluminum-based gallium nitride integrated circuits

Extrinsic field termination structures for improving reliability of...

Field effect transistors with dual field plates

Semiconductor device including plurality of gate fingers with vario...

Enhancement-mode high-electron-mobility transistor

Gallium nitride device for high frequency and high power applications

Semiconductor device having nickel oxide film on gate electrode

P-GaN high electron mobility transistor (HEMT) with MOS2-based 2D b...

Patents Applicationslast 30 patents

HIGH ELECTRON MOBILITY TRANSISTOR AND METHOD FOR MANUFACTURING THE...

COMPOUND SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREOF

TRANSISTOR WITH THERMAL PLUG

TYPE III-V SEMICONDUCTOR DEVICE WITH MULTI-LAYER BARRIER REGION

NITRIDE SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

SEMICONDUCTOR POWER DEVICE

SEMICONDUCTOR DEVICE

GALLIUM NITRIDE TRANSISTOR WITH A DOPED REGION

NITRIDE SEMICONDUCTOR SUBSTRATE AND METHOD FOR PRODUCING SAME

NITRIDE SEMICONDUCTOR DEVICE COMPRISING LAYERED STRUCTURE OF ACTIVE...

ELECTRONIC DEVICE

P TYPE GALLIUM NITRIDE CONFORMAL EPITAXIAL STRUCTURE OVER THICK BUF...

SEMICONDUCTOR DEVICE WITH SELF-ALIGNED GATE AND FIELD PLATE AND MET...

SEMICONDUCTOR DEVICE, METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE...

EPITAXIAL OXIDE MATERIALS, STRUCTURES, AND DEVICES

DEVICES FOR INTEGRATED FRONT-END CIRCUITS

HIGH ELECTRON MOBILITY TRANSISTOR AND METHOD OF MANUFACTURING THE SAME

SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE WITH GATE ELECTRICAL CONTACT FORMING JUNCTIONS...

NITRIDE-BASED SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE...

SEMICONDUCTOR DEVICE HAVING A DOPED REGION UNDERLYING A GATE LAYER...

SEMICONDUCTOR DEVICE

SEMICONDUCTOR ELECTRONIC DEVICE INTEGRATING AN ELECTRONIC COMPONENT...

HIGH ELECTRON MOBILITY TRANSISTOR AND FABRICATION METHOD THEREOF

HIGH-ELECTRON-MOBILITY TRANSISTOR

DOUBLE-CHANNEL HEMT DEVICE AND MANUFACTURING METHOD THEREOF

MANUFACTURING PROCESS OF A SEMICONDUCTOR ELECTRONIC DEVICE INTEGRAT...

GALLIUM NITRIDE (GAN) THREE-DIMENSIONAL INTEGRATED CIRCUIT TECHNOLOGY

SEMICONDUCTOR ELECTRONIC DEVICE COMPRISING AN ELECTRONIC COMPONENT...