with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer

Industry

CPC
H01L29/7786

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Parent Industries

HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier

Current Industry

H01L29/7786with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer

Industries

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Patents Grantslast 30 patents

Information Patent Grant
Nitride semiconductor, semiconductor device, and method for manufac...
- Patent number 12,170,318
- Issue date Dec 17, 2024
- Kabushiki Kaisha Toshiba
- Toshiki Hikosaka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nitride semiconductor device with element isolation area
- Patent number 12,170,316
- Issue date Dec 17, 2024
- Kabushika Kaisha Toshiba
- Akira Yoshioka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
P type gallium nitride conformal epitaxial structure over thick buf...
- Patent number 12,170,328
- Issue date Dec 17, 2024
- Texas Instruments Incorporated
- Tatsuya Tominari
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nitride semiconductor device comprising layered structure of active...
- Patent number 12,166,083
- Issue date Dec 10, 2024
- Rohm Co., Ltd.
- Yosuke Hata
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Group III nitride-based transistor device
- Patent number 12,166,117
- Issue date Dec 10, 2024
- Infineon Technologies Austria AG
- Luca Sayadi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 12,165,957
- Issue date Dec 10, 2024
- Rohm Co., Ltd.
- Minoru Akutsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Solder resist structure for embedded die packaging of power semicon...
- Patent number 12,166,115
- Issue date Dec 10, 2024
- Infineon Technologies Canada Inc.
- Cameron McKnight-MacNeil
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and fabrication method thereof
- Patent number 12,166,116
- Issue date Dec 10, 2024
- INNOSCIENCE (SUZHOU) TECHNOLOGY CO., LTD.
- Hao Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing a gate terminal of a HEMT device, and HEMT...
- Patent number 12,165,871
- Issue date Dec 10, 2024
- STMicroelectronics S.r.l.
- Ferdinando Iucolano
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Electronic device
- Patent number 12,166,033
- Issue date Dec 10, 2024
- INNOLUX CORPORATION
- Chin-Lung Ting
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High-electron-mobility transistor device and method of manufacturin...
- Patent number 12,166,101
- Issue date Dec 10, 2024
- ELECTRONICS AND TELECOMMINICATIONS RESEARCH INSTITUTE
- Soo Cheol Kang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for manufacturing the same
- Patent number 12,166,102
- Issue date Dec 10, 2024
- INNOSCIENCE (SUZHOU) TECHNOLOGY CO., LTD.
- Ronghui Hao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device structures and methods of manufacturing the same
- Patent number 12,166,114
- Issue date Dec 10, 2024
- INNOSCIENCE (SUZHOU) SEMICONDUCTOR CO., LTD.
- Jingyu Shen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High electron mobility transistors (HEMTS) including a yttrium (Y)...
- Patent number 12,166,118
- Issue date Dec 10, 2024
- Qorvo US, Inc.
- Edward Beam
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gallium nitride transistor with a doped region
- Patent number 12,166,119
- Issue date Dec 10, 2024
- Texas Instruments Incorporated
- Dong Seup Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device for power amplification
- Patent number 12,166,103
- Issue date Dec 10, 2024
- NUVOTON TECHNOLOGY CORPORATION JAPAN
- Katsuhiko Kawashima
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and fabrication method thereof
- Patent number 12,159,908
- Issue date Dec 3, 2024
- INNOSCIENCE (ZHUHAI) TECHNOLOGY CO., LTD.
- Chao Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Group III nitride-based transistor device
- Patent number 12,159,918
- Issue date Dec 3, 2024
- Infineon Technologies Austria AG
- Clemens Ostermaier
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nitride-based multi-channel switching semiconductor device and meth...
- Patent number 12,159,871
- Issue date Dec 3, 2024
- INNOSCIENCE (SUZHOU) TECHNOLOGY CO., LTD.
- Hui Yan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and fabrication method thereof
- Patent number 12,159,906
- Issue date Dec 3, 2024
- INNOSCIENCE (SUZHOU) TECHNOLOGY CO., LTD.
- Yi-Lun Chou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 12,159,932
- Issue date Dec 3, 2024
- Kabushiki Kaisha Toshiba
- Jumpei Tajima
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nitride-based semiconductor device and method for manufacturing the...
- Patent number 12,159,931
- Issue date Dec 3, 2024
- INNOSCIENCE (SUZHOU) TECHNOLOGY CO., LTD.
- Qingyuan He
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
III-nitride-based semiconductor devices on patterned substrates and...
- Patent number 12,154,864
- Issue date Nov 26, 2024
- INNOSCIENCE (SUZHOU) TECHNOLOGY CO., LTD.
- Liang Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for manufacturing the same
- Patent number 12,154,968
- Issue date Nov 26, 2024
- INNOSCIENCE (SUZHOU) TECHNOLOGY CO., LTD.
- Ronghui Hao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nitride-based semiconductor device and method for manufacturing the...
- Patent number 12,154,980
- Issue date Nov 26, 2024
- INNOSCIENCE (SUZHOU) TECHNOLOGY CO., LTD.
- Yi-Lun Chou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ohmic contacts for a high-electron-mobility transistor
- Patent number 12,154,961
- Issue date Nov 26, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Samuel Troughton
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Laminate, semiconductor device, and method for manufacturing laminate
- Patent number 12,154,952
- Issue date Nov 26, 2024
- Shin-Etsu Chemical Co., Ltd.
- Hiroshi Hashigami
- C01 - INORGANIC CHEMISTRY
Information Patent Grant
Structure including multi-level field plate and method of forming t...
- Patent number 12,154,956
- Issue date Nov 26, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Johnatan Avraham Kantarovsky
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing an ohmic contact for a HEMT device
- Patent number 12,154,967
- Issue date Nov 26, 2024
- STMicroelectronics S.r.l.
- Ferdinando Iucolano
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 12,154,981
- Issue date Nov 26, 2024
- United Microelectronics Corp.
- Po-Yu Yang
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
GaN SEMICONDUCTOR POWER TRANSISTOR WITH SLANTED GATE FIELD PLATE AN...
- Publication number 20240421196
- Publication date Dec 19, 2024
- GaN Systems Inc.
- Abhinandan DIXIT
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GALLIUM NITRIDE DEVICE WITH ARTIFICIAL FIELD PLATES
- Publication number 20240421194
- Publication date Dec 19, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Yi-An LAI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NITRIDE SEMICONDUCTOR DEVICE
- Publication number 20240421195
- Publication date Dec 19, 2024
- ROHM CO., LTD.
- Shinya TAKADO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ELECTRIC FIELD MANAGEMENT IN SEMICONDUCTOR DEVICES
- Publication number 20240420957
- Publication date Dec 19, 2024
- Analog Devices, Inc.
- James G. Fiorenza
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MODULE ASSEMBLY OF MULTIPLE SEMICONDUCTOR DEVICES WITH INSULATING S...
- Publication number 20240421139
- Publication date Dec 19, 2024
- Transphorm Technology, Inc.
- Davide Bisi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH ELECTRON MOBILITY TRANSISTOR AND MANUFACTURING METHOD THEREOF
- Publication number 20240421218
- Publication date Dec 19, 2024
- Lucid Microsystems PTE LTD.
- Zihao Mike GAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH ELECTRON MOBILITY TRANSISTOR AND METHOD FOR FABRICATING THE SAME
- Publication number 20240421219
- Publication date Dec 19, 2024
- UNITED MICROELECTRONICS CORP.
- Kai-Lin Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GROUP III NITRIDE DEVICE
- Publication number 20240413212
- Publication date Dec 12, 2024
- INFINEON TECHNOLOGIES AG
- Albert Birner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FABRICATING HIGH ELECTRON MOBILITY TRANSISTOR
- Publication number 20240413236
- Publication date Dec 12, 2024
- Vanguard International Semiconductor Corporation
- Yang Du
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GAN SUBSTRATE
- Publication number 20240413209
- Publication date Dec 12, 2024
- MITSUBISHI CHEMICAL CORPORATION
- Kenji ISO
- C30 - CRYSTAL GROWTH
Information Patent Application
NITRIDE SEMICONDUCTOR MODULE
- Publication number 20240413235
- Publication date Dec 12, 2024
- Rohm Co., Ltd.
- Hirotaka Otake
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Field Peak Reduction in Semiconductor Devices with Metal Corner Rou...
- Publication number 20240413218
- Publication date Dec 12, 2024
- Wolfspeed, Inc.
- Olof Tornblad
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GALLIUM NITRIDE SEMICONDUCTOR DEVICE
- Publication number 20240413233
- Publication date Dec 12, 2024
- UNITED MICROELECTRONICS CORP.
- Yi-Chuan Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR STRUCTURE USING MULTIPLE TWO-DIMENSIONAL CHANNELS
- Publication number 20240413234
- Publication date Dec 12, 2024
- GAN SYSTEMS INC.
- Marco A. ZUNIGA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GAN EPITAXIAL SUBSTRATE
- Publication number 20240413210
- Publication date Dec 12, 2024
- MITSUBISHI CHEMICAL CORPORATION
- Kenji ISO
- C30 - CRYSTAL GROWTH
Information Patent Application
IMPLANT SCHEME TO IMPROVE HIGH ELECTRON MOBILITY TRANSISTOR CONTACT...
- Publication number 20240405079
- Publication date Dec 5, 2024
- Applied Materials, Inc.
- Qintao ZHANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
AlGaN/GaN POWER HEMT DEVICE AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20240405116
- Publication date Dec 5, 2024
- CHINA RESOURCES MICROELECTRONICS (CHONGQING) CO., LTD.
- Hongan ZENG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED DEVICES WITH CONDUCTIVE BARRIER STRUCTURE
- Publication number 20240405078
- Publication date Dec 5, 2024
- TEXAS INSTRUMENTS INCORPORATED
- Ujwal Radhakrishna
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HEMT DEVICE HAVING AN IMPROVED CONDUCTIVITY AND MANUFACTURING PROCE...
- Publication number 20240405115
- Publication date Dec 5, 2024
- STMicroelectronics International N.V.
- Maria Eloisa CASTAGNA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NITRIDE SEMICONDUCTOR DEVICE
- Publication number 20240405117
- Publication date Dec 5, 2024
- ROHM CO., LTD.
- Hirotaka OTAKE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH ELECTRON MOBILITY TRANSISTOR
- Publication number 20240405080
- Publication date Dec 5, 2024
- HiPer Semiconductor Inc.
- YAN LAI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HEMT POWER DEVICE WITH REDUCED GATE OSCILLATION AND MANUFACTURING P...
- Publication number 20240404945
- Publication date Dec 5, 2024
- STMicroelectronics International N.V.
- Antonio Filippo Massimo PIZZARDI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MONOLITHICALLY INTEGRATED SEMICONDUCTOR DEVICE STRUCTURE
- Publication number 20240404967
- Publication date Dec 5, 2024
- ENKRIS SEMICONDUCTOR (WUXI), LTD.
- Guoqiao TAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED DEVICES WITH CONDUCTIVE BARRIER STRUCTURE
- Publication number 20240405024
- Publication date Dec 5, 2024
- TEXAS INSTRUMENTS INCORPORATED
- Ujwal Radhakrishna
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH ELECTRON MOBILITY TRANSISTOR AND ITS MANUFACTURING METHOD
- Publication number 20240395920
- Publication date Nov 28, 2024
- SILERGY SEMICONDUCTOR TECHNOLOGY (HANGZHOU) LTD
- Li Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR HETEROSTRUCTURES WITH SCANDIUM III-NITRIDE LAYER
- Publication number 20240395921
- Publication date Nov 28, 2024
- The Regents of the University of Michigan
- Zetian Mi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
POWER SEMICONDUCTOR DEVICE COMPRISING A WIDE BANDGAP SUBSTRATE
- Publication number 20240395804
- Publication date Nov 28, 2024
- Cambridge GaN Devices Limited
- Florin UDREA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH FIELD PLATE AND MULTIPLE-PART GATE STRUCT...
- Publication number 20240395872
- Publication date Nov 28, 2024
- NXP USA, Inc.
- Jie Hu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
WAFER AND SEMICONDUCTOR DEVICE
- Publication number 20240395543
- Publication date Nov 28, 2024
- Kabushiki Kaisha Toshiba
- Hisashi YOSHIDA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HEMT DEVICES WITH REDUCED SIZE AND HIGH ALIGNMENT TOLERANCE
- Publication number 20240395922
- Publication date Nov 28, 2024
- SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
- Peter COPPENS
- H01 - BASIC ELECTRIC ELEMENTS

with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Nitride semiconductor, semiconductor device, and method for manufac...

Nitride semiconductor device with element isolation area

P type gallium nitride conformal epitaxial structure over thick buf...

Nitride semiconductor device comprising layered structure of active...

Group III nitride-based transistor device

Semiconductor device

Solder resist structure for embedded die packaging of power semicon...

Semiconductor device and fabrication method thereof

Method for manufacturing a gate terminal of a HEMT device, and HEMT...

Electronic device

High-electron-mobility transistor device and method of manufacturin...

Semiconductor device and method for manufacturing the same

Semiconductor device structures and methods of manufacturing the same

High electron mobility transistors (HEMTS) including a yttrium (Y)...

Gallium nitride transistor with a doped region

Semiconductor device for power amplification

Semiconductor device and fabrication method thereof

Group III nitride-based transistor device

Nitride-based multi-channel switching semiconductor device and meth...

Semiconductor device and fabrication method thereof

Semiconductor device

Nitride-based semiconductor device and method for manufacturing the...

III-nitride-based semiconductor devices on patterned substrates and...

Semiconductor device and method for manufacturing the same

Nitride-based semiconductor device and method for manufacturing the...

Ohmic contacts for a high-electron-mobility transistor

Laminate, semiconductor device, and method for manufacturing laminate

Structure including multi-level field plate and method of forming t...

Method for manufacturing an ohmic contact for a HEMT device

Semiconductor device

Patents Applicationslast 30 patents

GaN SEMICONDUCTOR POWER TRANSISTOR WITH SLANTED GATE FIELD PLATE AN...

GALLIUM NITRIDE DEVICE WITH ARTIFICIAL FIELD PLATES

NITRIDE SEMICONDUCTOR DEVICE

ELECTRIC FIELD MANAGEMENT IN SEMICONDUCTOR DEVICES

MODULE ASSEMBLY OF MULTIPLE SEMICONDUCTOR DEVICES WITH INSULATING S...

HIGH ELECTRON MOBILITY TRANSISTOR AND MANUFACTURING METHOD THEREOF

HIGH ELECTRON MOBILITY TRANSISTOR AND METHOD FOR FABRICATING THE SAME

GROUP III NITRIDE DEVICE

METHOD OF FABRICATING HIGH ELECTRON MOBILITY TRANSISTOR

GAN SUBSTRATE

NITRIDE SEMICONDUCTOR MODULE

Field Peak Reduction in Semiconductor Devices with Metal Corner Rou...

GALLIUM NITRIDE SEMICONDUCTOR DEVICE

TRANSISTOR STRUCTURE USING MULTIPLE TWO-DIMENSIONAL CHANNELS

GAN EPITAXIAL SUBSTRATE

IMPLANT SCHEME TO IMPROVE HIGH ELECTRON MOBILITY TRANSISTOR CONTACT...

AlGaN/GaN POWER HEMT DEVICE AND METHOD FOR MANUFACTURING THE SAME

INTEGRATED DEVICES WITH CONDUCTIVE BARRIER STRUCTURE

HEMT DEVICE HAVING AN IMPROVED CONDUCTIVITY AND MANUFACTURING PROCE...

NITRIDE SEMICONDUCTOR DEVICE

HIGH ELECTRON MOBILITY TRANSISTOR

HEMT POWER DEVICE WITH REDUCED GATE OSCILLATION AND MANUFACTURING P...

MONOLITHICALLY INTEGRATED SEMICONDUCTOR DEVICE STRUCTURE

INTEGRATED DEVICES WITH CONDUCTIVE BARRIER STRUCTURE

HIGH ELECTRON MOBILITY TRANSISTOR AND ITS MANUFACTURING METHOD

SEMICONDUCTOR HETEROSTRUCTURES WITH SCANDIUM III-NITRIDE LAYER

POWER SEMICONDUCTOR DEVICE COMPRISING A WIDE BANDGAP SUBSTRATE

SEMICONDUCTOR DEVICE WITH FIELD PLATE AND MULTIPLE-PART GATE STRUCT...

WAFER AND SEMICONDUCTOR DEVICE

HEMT DEVICES WITH REDUCED SIZE AND HIGH ALIGNMENT TOLERANCE