with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer

Industry

CPC
H01L29/7786

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Parent Industries

HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier

Current Industry

H01L29/7786with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer

Industries

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Patents Grantslast 30 patents

Information Patent Grant
Semiconductor device and method for fabricating a semiconductor wafer
- Patent number 12,230,689
- Issue date Feb 18, 2025
- Infineon Technologies AG
- Helmut Brech
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
III-N based material structures, methods, devices and circuit modul...
- Patent number 12,230,678
- Issue date Feb 18, 2025
- The Regents of the University of California
- Umesh K. Mishra
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Modification of electric fields of compound semiconductor devices
- Patent number 12,230,699
- Issue date Feb 18, 2025
- Analog Devices, Inc.
- Daniel Piedra
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Quantum structure getter for radiation hardened transistors
- Patent number 12,230,677
- Issue date Feb 18, 2025
- The United States of America, as represented by the Secretary of the Navy
- Timothy Allen Morgan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming a high electron mobility transistor
- Patent number 12,230,690
- Issue date Feb 18, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chun-Wei Hsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Type III-V semiconductor device with structured passivation
- Patent number 12,230,700
- Issue date Feb 18, 2025
- Infineon Technologies Austria AG
- Simone Lavanga
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bypassed gate transistors having improved stability
- Patent number 12,230,701
- Issue date Feb 18, 2025
- MACOM Technology Solutions Holdings, Inc.
- Khaled Fayed
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
PGaN enhancement mode HEMTs with dopant diffusion spacer
- Patent number 12,224,337
- Issue date Feb 11, 2025
- Intel Corporation
- Michael Beumer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Epitaxial structure having diffusion barrier layer
- Patent number 12,224,322
- Issue date Feb 11, 2025
- GlobalWafers Co., Ltd.
- Tzu-Yao Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 12,224,331
- Issue date Feb 11, 2025
- NUVOTON TECHNOLOGY CORPORATION JAPAN
- Katsuhiko Kawashima
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Radio frequency transistor amplifiers having self-aligned double im...
- Patent number 12,224,318
- Issue date Feb 11, 2025
- Wolfspeed, Inc.
- Kyle Bothe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
HEMT and fabricating method of the same
- Patent number 12,224,338
- Issue date Feb 11, 2025
- United Microelectronics Corp.
- Huai-Tzu Chiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device including compound and nitride members
- Patent number 12,218,232
- Issue date Feb 4, 2025
- Kabushiki Kaisha Toshiba
- Daimotsu Kato
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device incorporating a substrate recess
- Patent number 12,218,202
- Issue date Feb 4, 2025
- Wolfspeed, Inc.
- Evan Jones
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nitride-based semiconductor bidirectional switching device and meth...
- Patent number 12,218,128
- Issue date Feb 4, 2025
- INNOSCIENCE (SUZHOU) TECHNOLOGY CO., LTD.
- Qiyue Zhao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
HEMT transistor including field plate regions and manufacturing pro...
- Patent number 12,218,231
- Issue date Feb 4, 2025
- STMicroelectronics S.r.l.
- Ferdinando Iucolano
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High electron mobility transistor and method of manufacturing the same
- Patent number 12,218,233
- Issue date Feb 4, 2025
- Samsung Electronics Co., Ltd.
- Jaejoon Oh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Group III nitride based depletion mode differential amplifiers and...
- Patent number 12,212,289
- Issue date Jan 28, 2025
- MACOM Technology Solutions Holdings, Inc.
- Jeremy Fisher
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nitride semiconductor device
- Patent number 12,211,839
- Issue date Jan 28, 2025
- Rohm Co., Ltd.
- Hirotaka Otake
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and fabrication method thereof
- Patent number 12,211,912
- Issue date Jan 28, 2025
- INNOSCIENCE (ZHUHAI) TECHNOLOGY CO., LTD.
- Hao Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Epitaxial oxide materials, structures, and devices
- Patent number 12,206,048
- Issue date Jan 21, 2025
- SILANNA UV TECHNOLOGIES PTE LTD
- Petar Atanackovic
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High electron mobility transistor and method for forming the same
- Patent number 12,206,000
- Issue date Jan 21, 2025
- United Microelectronics Corp.
- Chih-Tung Yeh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Wafer, optical emission device, method of producing a wafer, and me...
- Patent number 12,205,987
- Issue date Jan 21, 2025
- Technische Universitat Munchen
- Christian Dangel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nitride semiconductor device
- Patent number 12,199,173
- Issue date Jan 14, 2025
- Rohm Co., Ltd.
- Hirotaka Otake
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for producing same
- Patent number 12,199,028
- Issue date Jan 14, 2025
- Rohm Co., Ltd.
- Minoru Akutsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device structures and methods of manufacturing the same
- Patent number 12,199,000
- Issue date Jan 14, 2025
- INNOSCIENCE (ZHUHAI) TECHNOLOGY CO., LTD.
- Hang Liao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for manufacturing the same
- Patent number 12,199,017
- Issue date Jan 14, 2025
- INNOSCIENCE (SUZHOU) TECHNOLOGY CO., LTD.
- Xiaoyan Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High electron mobility transistor and method of manufacturing the same
- Patent number 12,199,174
- Issue date Jan 14, 2025
- Samsung Electronics Co., Ltd.
- Junhyuk Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Manufacturing method for forminginsulating structure of high electr...
- Patent number 12,199,175
- Issue date Jan 14, 2025
- United Microelectronics Corp.
- Chun-Ming Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 12,199,176
- Issue date Jan 14, 2025
- United Microelectronics Corp.
- Chun-Ming Chang
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20250063752
- Publication date Feb 20, 2025
- Kabushiki Kaisha Toshiba
- Ikuo FUJIWARA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NITRIDE SEMICONDUCTOR SUBSTRATE AND METHOD FOR PRODUCING SAME
- Publication number 20250059675
- Publication date Feb 20, 2025
- Shin-Etsu Handotai Co., Ltd.
- Keitaro TSUCHIYA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GALLIUM NITRIDE TRANSISTOR WITH A DOPED REGION
- Publication number 20250063755
- Publication date Feb 20, 2025
- TEXAS INSTRUMENTS INCORPORATED
- Dong Seup LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NITRIDE SEMICONDUCTOR DEVICE COMPRISING LAYERED STRUCTURE OF ACTIVE...
- Publication number 20250063787
- Publication date Feb 20, 2025
- Rohm Co., Ltd.
- Yosuke HATA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
P TYPE GALLIUM NITRIDE CONFORMAL EPITAXIAL STRUCTURE OVER THICK BUF...
- Publication number 20250063756
- Publication date Feb 20, 2025
- TEXAS INSTRUMENTS INCORPORATED
- Tatsuya Tominari
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ELECTRONIC DEVICE
- Publication number 20250063801
- Publication date Feb 20, 2025
- Innolux Corporation
- Chin-Lung Ting
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH SELF-ALIGNED GATE AND FIELD PLATE AND MET...
- Publication number 20250063753
- Publication date Feb 20, 2025
- NXP USA, Inc.
- Philippe Renaud
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE, METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE...
- Publication number 20250063754
- Publication date Feb 20, 2025
- Fujitsu Limited
- Kenji HOMMA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
EPITAXIAL OXIDE MATERIALS, STRUCTURES, AND DEVICES
- Publication number 20250056927
- Publication date Feb 13, 2025
- Silanna UV Technologies Pte Ltd
- Petar Atanackovic
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DEVICES FOR INTEGRATED FRONT-END CIRCUITS
- Publication number 20250056878
- Publication date Feb 13, 2025
- MONDE Wireless Inc.
- Matthew Guidry
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH ELECTRON MOBILITY TRANSISTOR AND METHOD OF MANUFACTURING THE SAME
- Publication number 20250056827
- Publication date Feb 13, 2025
- Samsung Electronics Co., Ltd.
- Jaejoon OH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20250056826
- Publication date Feb 13, 2025
- Kabushiki Kaisha Toshiba
- Yosuke KAJIWARA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH GATE ELECTRICAL CONTACT FORMING JUNCTIONS...
- Publication number 20250048667
- Publication date Feb 6, 2025
- TEXAS INSTRUMENTS INCORPORATED
- Ujwal Radhakrishna
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NITRIDE-BASED SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE...
- Publication number 20250048668
- Publication date Feb 6, 2025
- INNOSCIENCE (SUZHOU) TECHNOLOGY CO., LTD.
- Liuchang MENG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE HAVING A DOPED REGION UNDERLYING A GATE LAYER...
- Publication number 20250040171
- Publication date Jan 30, 2025
- TEXAS INSTRUMENTS INCORPORATED
- Dong Seup LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20250040174
- Publication date Jan 30, 2025
- Kabushiki Kaisha Toshiba
- Jumpei TAJIMA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR ELECTRONIC DEVICE INTEGRATING AN ELECTRONIC COMPONENT...
- Publication number 20250040210
- Publication date Jan 30, 2025
- STMicroelectronics International N.V.
- Riccardo DEPETRO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH ELECTRON MOBILITY TRANSISTOR AND FABRICATION METHOD THEREOF
- Publication number 20250040220
- Publication date Jan 30, 2025
- Vanguard International Semiconductor Corporation
- Chen-Dong Tzou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH-ELECTRON-MOBILITY TRANSISTOR
- Publication number 20250040221
- Publication date Jan 30, 2025
- GLOBALFOUNDRIES U.S. Inc.
- Johnatan A. KANTAROVSKY
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DOUBLE-CHANNEL HEMT DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20250040173
- Publication date Jan 30, 2025
- STMicroelectronics S.r.l.
- Ferdinando IUCOLANO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MANUFACTURING PROCESS OF A SEMICONDUCTOR ELECTRONIC DEVICE INTEGRAT...
- Publication number 20250040163
- Publication date Jan 30, 2025
- STMicroelectronics International N.V.
- Riccardo DEPETRO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GALLIUM NITRIDE (GAN) THREE-DIMENSIONAL INTEGRATED CIRCUIT TECHNOLOGY
- Publication number 20250040231
- Publication date Jan 30, 2025
- Intel Corporation
- Han Wui THEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR ELECTRONIC DEVICE COMPRISING AN ELECTRONIC COMPONENT...
- Publication number 20250040244
- Publication date Jan 30, 2025
- STMicroelectronics International N.V.
- Riccardo DEPETRO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MANUFACTURING AN OHMIC CONTACT FOR A HEMT DEVICE
- Publication number 20250040164
- Publication date Jan 30, 2025
- STMicroelectronics S.r.l.
- Ferdinando IUCOLANO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH ELECTRON MOBILITY TRANSISTOR AND METHOD FOR FORMING THE SAME
- Publication number 20250040172
- Publication date Jan 30, 2025
- UNITED MICROELECTRONICS CORP.
- Po-Yu Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GAN-BASED HEMT STRUCTURE HAVING MULTI-THRESHOLD VOLTAGE, AND PREPAR...
- Publication number 20250031398
- Publication date Jan 23, 2025
- Guangdong Institute of Semiconductor Micro-Nano Manufacturing Technology
- Yaozong ZHONG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HYBRID TYPE AlGaN/GaN HEMT DEVICE
- Publication number 20250031402
- Publication date Jan 23, 2025
- CHIH-SHU HUANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20250031437
- Publication date Jan 23, 2025
- INNOSCIENCE (SUZHOU) SEMICONDUCTOR CO., LTD.
- Xiaoming LIU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR SUBSTRATE, SEMICONDUCTOR COMPONENT AND METHODS
- Publication number 20250029920
- Publication date Jan 23, 2025
- Infineon Technologies Austria AG
- Oliver Blank
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HEMT TRANSISTOR WITH ADJUSTED GATE-SOURCE DISTANCE, AND MANUFACTURI...
- Publication number 20250022947
- Publication date Jan 16, 2025
- STMicroelectronics S.r.l.
- Ferdinando IUCOLANO
- H01 - BASIC ELECTRIC ELEMENTS

with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Semiconductor device and method for fabricating a semiconductor wafer

III-N based material structures, methods, devices and circuit modul...

Modification of electric fields of compound semiconductor devices

Quantum structure getter for radiation hardened transistors

Method of forming a high electron mobility transistor

Type III-V semiconductor device with structured passivation

Bypassed gate transistors having improved stability

PGaN enhancement mode HEMTs with dopant diffusion spacer

Epitaxial structure having diffusion barrier layer

Semiconductor device

Radio frequency transistor amplifiers having self-aligned double im...

HEMT and fabricating method of the same

Semiconductor device including compound and nitride members

Semiconductor device incorporating a substrate recess

Nitride-based semiconductor bidirectional switching device and meth...

HEMT transistor including field plate regions and manufacturing pro...

High electron mobility transistor and method of manufacturing the same

Group III nitride based depletion mode differential amplifiers and...

Nitride semiconductor device

Semiconductor device and fabrication method thereof

Epitaxial oxide materials, structures, and devices

High electron mobility transistor and method for forming the same

Wafer, optical emission device, method of producing a wafer, and me...

Nitride semiconductor device

Semiconductor device and method for producing same

Semiconductor device structures and methods of manufacturing the same

Semiconductor device and method for manufacturing the same

High electron mobility transistor and method of manufacturing the same

Manufacturing method for forminginsulating structure of high electr...

Semiconductor device

Patents Applicationslast 30 patents

SEMICONDUCTOR DEVICE

NITRIDE SEMICONDUCTOR SUBSTRATE AND METHOD FOR PRODUCING SAME

GALLIUM NITRIDE TRANSISTOR WITH A DOPED REGION

NITRIDE SEMICONDUCTOR DEVICE COMPRISING LAYERED STRUCTURE OF ACTIVE...

P TYPE GALLIUM NITRIDE CONFORMAL EPITAXIAL STRUCTURE OVER THICK BUF...

ELECTRONIC DEVICE

SEMICONDUCTOR DEVICE WITH SELF-ALIGNED GATE AND FIELD PLATE AND MET...

SEMICONDUCTOR DEVICE, METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE...

EPITAXIAL OXIDE MATERIALS, STRUCTURES, AND DEVICES

DEVICES FOR INTEGRATED FRONT-END CIRCUITS

HIGH ELECTRON MOBILITY TRANSISTOR AND METHOD OF MANUFACTURING THE SAME

SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE WITH GATE ELECTRICAL CONTACT FORMING JUNCTIONS...

NITRIDE-BASED SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE...

SEMICONDUCTOR DEVICE HAVING A DOPED REGION UNDERLYING A GATE LAYER...

SEMICONDUCTOR DEVICE

SEMICONDUCTOR ELECTRONIC DEVICE INTEGRATING AN ELECTRONIC COMPONENT...

HIGH ELECTRON MOBILITY TRANSISTOR AND FABRICATION METHOD THEREOF

HIGH-ELECTRON-MOBILITY TRANSISTOR

DOUBLE-CHANNEL HEMT DEVICE AND MANUFACTURING METHOD THEREOF

MANUFACTURING PROCESS OF A SEMICONDUCTOR ELECTRONIC DEVICE INTEGRAT...

GALLIUM NITRIDE (GAN) THREE-DIMENSIONAL INTEGRATED CIRCUIT TECHNOLOGY

SEMICONDUCTOR ELECTRONIC DEVICE COMPRISING AN ELECTRONIC COMPONENT...

METHOD FOR MANUFACTURING AN OHMIC CONTACT FOR A HEMT DEVICE

HIGH ELECTRON MOBILITY TRANSISTOR AND METHOD FOR FORMING THE SAME

GAN-BASED HEMT STRUCTURE HAVING MULTI-THRESHOLD VOLTAGE, AND PREPAR...

HYBRID TYPE AlGaN/GaN HEMT DEVICE

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

SEMICONDUCTOR SUBSTRATE, SEMICONDUCTOR COMPONENT AND METHODS

HEMT TRANSISTOR WITH ADJUSTED GATE-SOURCE DISTANCE, AND MANUFACTURI...