with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer

Industry

CPC
H01L29/7786

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Parent Industries

HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier

Current Industry

H01L29/7786with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer

Industries

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Patents Grantslast 30 patents

Information Patent Grant
Epitaxial oxide materials, structures, and devices
- Patent number 12,206,048
- Issue date Jan 21, 2025
- SILANNA UV TECHNOLOGIES PTE LTD
- Petar Atanackovic
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Wafer, optical emission device, method of producing a wafer, and me...
- Patent number 12,205,987
- Issue date Jan 21, 2025
- Technische Universitat Munchen
- Christian Dangel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High electron mobility transistor and method for forming the same
- Patent number 12,206,000
- Issue date Jan 21, 2025
- United Microelectronics Corp.
- Chih-Tung Yeh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nitride semiconductor device
- Patent number 12,199,173
- Issue date Jan 14, 2025
- Rohm Co., Ltd.
- Hirotaka Otake
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device structures and methods of manufacturing the same
- Patent number 12,199,000
- Issue date Jan 14, 2025
- INNOSCIENCE (ZHUHAI) TECHNOLOGY CO., LTD.
- Hang Liao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for producing same
- Patent number 12,199,028
- Issue date Jan 14, 2025
- Rohm Co., Ltd.
- Minoru Akutsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for manufacturing the same
- Patent number 12,199,017
- Issue date Jan 14, 2025
- INNOSCIENCE (SUZHOU) TECHNOLOGY CO., LTD.
- Xiaoyan Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High electron mobility transistor and method of manufacturing the same
- Patent number 12,199,174
- Issue date Jan 14, 2025
- Samsung Electronics Co., Ltd.
- Junhyuk Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Manufacturing method for forminginsulating structure of high electr...
- Patent number 12,199,175
- Issue date Jan 14, 2025
- United Microelectronics Corp.
- Chun-Ming Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 12,199,176
- Issue date Jan 14, 2025
- United Microelectronics Corp.
- Chun-Ming Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertically emitting laser devices and chip-scale-package laser devi...
- Patent number 12,191,626
- Issue date Jan 7, 2025
- KYOCERA SLD Laser, Inc.
- Melvin McLaurin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Heterogeneous integration of radio frequency transistor chiplets ha...
- Patent number 12,191,295
- Issue date Jan 7, 2025
- PseudolithIC, Inc.
- James F. Buckwalter
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
III-nitride device
- Patent number 12,191,302
- Issue date Jan 7, 2025
- Infineon Technologies Americas Corp.
- Michael A. Briere
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with an insulating region formed between a con...
- Patent number 12,191,383
- Issue date Jan 7, 2025
- NXP USA, INC.
- Bruce Mcrae Green
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Non-linear HEMT devices
- Patent number 12,183,815
- Issue date Dec 31, 2024
- SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
- Abhishek Banerjee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multi-channel transistor
- Patent number 12,183,814
- Issue date Dec 31, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Steven J. Bentley
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Type III-V semiconductor device with multi-layer barrier region
- Patent number 12,183,816
- Issue date Dec 31, 2024
- Infineon Technologies Austria AG
- Korbinian Reiser
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device for RF integrated circuit
- Patent number 12,183,676
- Issue date Dec 31, 2024
- MONDE WIRELESS INC.
- Brian Romanczyk
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Monolithic semiconductor device and hybrid semiconductor device
- Patent number 12,183,817
- Issue date Dec 31, 2024
- NUVOTON TECHNOLOGY CORPORATION JAPAN
- Kaname Motoyoshi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High electron mobility transistor device
- Patent number 12,176,403
- Issue date Dec 24, 2024
- United Microelectronics Corp.
- Chi-Hsiao Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nitride-based semiconductor bidirectional switching device and meth...
- Patent number 12,176,343
- Issue date Dec 24, 2024
- INNOSCIENCE (SUZHOU) TECHNOLOGY CO., LTD.
- Qiyue Zhao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High electron mobility transistor and method for forming the same
- Patent number 12,176,414
- Issue date Dec 24, 2024
- United Microelectronics Corp.
- Po-Yu Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Electronic device employing two-dimensional electron gas with reduc...
- Patent number 12,176,431
- Issue date Dec 24, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Tzu-Wen Shih
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transformer-based drive for GaN devices
- Patent number 12,176,887
- Issue date Dec 24, 2024
- Infineon Technologies Austria AG
- Derek Bernardon
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Incorporating semiconductors on a polycrystalline diamond substrate
- Patent number 12,176,221
- Issue date Dec 24, 2024
- Texas State University
- Raju Ahmed
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Nitride semiconductor, semiconductor device, and method for manufac...
- Patent number 12,170,318
- Issue date Dec 17, 2024
- Kabushiki Kaisha Toshiba
- Toshiki Hikosaka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nitride semiconductor device with element isolation area
- Patent number 12,170,316
- Issue date Dec 17, 2024
- Kabushika Kaisha Toshiba
- Akira Yoshioka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
P type gallium nitride conformal epitaxial structure over thick buf...
- Patent number 12,170,328
- Issue date Dec 17, 2024
- Texas Instruments Incorporated
- Tatsuya Tominari
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nitride semiconductor device comprising layered structure of active...
- Patent number 12,166,083
- Issue date Dec 10, 2024
- Rohm Co., Ltd.
- Yosuke Hata
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Group III nitride-based transistor device
- Patent number 12,166,117
- Issue date Dec 10, 2024
- Infineon Technologies Austria AG
- Luca Sayadi
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
GAN-BASED HEMT STRUCTURE HAVING MULTI-THRESHOLD VOLTAGE, AND PREPAR...
- Publication number 20250031398
- Publication date Jan 23, 2025
- Guangdong Institute of Semiconductor Micro-Nano Manufacturing Technology
- Yaozong ZHONG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HYBRID TYPE AlGaN/GaN HEMT DEVICE
- Publication number 20250031402
- Publication date Jan 23, 2025
- CHIH-SHU HUANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20250031437
- Publication date Jan 23, 2025
- INNOSCIENCE (SUZHOU) SEMICONDUCTOR CO., LTD.
- Xiaoming LIU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR SUBSTRATE, SEMICONDUCTOR COMPONENT AND METHODS
- Publication number 20250029920
- Publication date Jan 23, 2025
- Infineon Technologies Austria AG
- Oliver Blank
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HEMT TRANSISTOR WITH ADJUSTED GATE-SOURCE DISTANCE, AND MANUFACTURI...
- Publication number 20250022947
- Publication date Jan 16, 2025
- STMicroelectronics S.r.l.
- Ferdinando IUCOLANO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CONTACT STRUCTURE FOR III-NITRIDE TRANSISTORS WITH CAP LAYERS
- Publication number 20250022928
- Publication date Jan 16, 2025
- Finwave Semiconductor, Inc.
- Hal Emmer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH ELECTRON MOBILITY TRANSISTOR WITH HELPING GATE
- Publication number 20250022932
- Publication date Jan 16, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chiao-Chun Hsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
N-POLAR III-NITRIDE DEVICE STRUCTURES WITH A P-TYPE LAYER
- Publication number 20250022948
- Publication date Jan 16, 2025
- MONDE Wireless Inc.
- Brian ROMANCZYK
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20250022933
- Publication date Jan 16, 2025
- NUVOTON TECHNOLOGY CORPORATION JAPAN
- Katsuhiko KAWASHIMA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NITRIDE SEMICONDUCTOR DEVICE
- Publication number 20250022921
- Publication date Jan 16, 2025
- Panasonic Holdings Corporation
- Daisuke Shibata
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND ELECTRONIC APPARATUS INCLUDING THE SAME
- Publication number 20250022927
- Publication date Jan 16, 2025
- Samsung Electronics Co., Ltd.
- Youngtek OH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FABRICATING HIGH ELECTRON MOBILITY TRANSISTOR
- Publication number 20250015174
- Publication date Jan 9, 2025
- Vanguard International Semiconductor Corporation
- Yung-Fong Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE FOR POWER AMPLIFICATION
- Publication number 20250015149
- Publication date Jan 9, 2025
- NUVOTON TECHNOLOGY CORPORATION JAPAN
- Katsuhiko KAWASHIMA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS OF FORMING FILMS INCLUDING SCANDIUM AT LOW TEMPERATURES USI...
- Publication number 20250017115
- Publication date Jan 9, 2025
- Akoustis, Inc.
- Craig Moe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE FOR POWER AMPLIFICATION
- Publication number 20250015150
- Publication date Jan 9, 2025
- NUVOTON TECHNOLOGY CORPORATION JAPAN
- Katsuhiko KAWASHIMA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NITRIDE SEMICONDUCTOR DEVICE
- Publication number 20250015152
- Publication date Jan 9, 2025
- ROHM CO., LTD.
- Manabu YANAGIHARA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
POWER AMPLIFIER SEMICONDUCTOR DEVICE
- Publication number 20250015768
- Publication date Jan 9, 2025
- NUVOTON TECHNOLOGY CORPORATION JAPAN
- Akihiko NISHIO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH ELECTRON MOBILITY TRANSISTOR AND METHOD FOR FABRICATING THE SAME
- Publication number 20250015173
- Publication date Jan 9, 2025
- UNITED MICROELECTRONICS CORP.
- Shin-Chuan Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20250015142
- Publication date Jan 9, 2025
- UNITED MICROELECTRONICS CORP.
- Chih-Tung Yeh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR FORMING THE SAME
- Publication number 20250006831
- Publication date Jan 2, 2025
- Vanguard International Semiconductor Corporation
- Cheng-Wei CHOU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NITRIDE SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREFOR
- Publication number 20250006798
- Publication date Jan 2, 2025
- Panasonic Intellectual Property Management Co., Ltd.
- Hideyuki OKITA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR SUBSTRATE, SEMICONDUCTOR DEVICE, METHOD FOR PRODUCING...
- Publication number 20250006799
- Publication date Jan 2, 2025
- AIR WATER INC.
- Keisuke KAWAMURA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GAN EPITAXIAL SUBSTRATE
- Publication number 20250003113
- Publication date Jan 2, 2025
- MITSUBISHI CHEMICAL CORPORATION
- Kenji ISO
- C30 - CRYSTAL GROWTH
Information Patent Application
SEMICONDUCTOR DEVICE AND DISPLAY DEVICE INCLUDING THE SAME
- Publication number 20250006846
- Publication date Jan 2, 2025
- Semiconductor Energy Laboratory Co., Ltd.
- Shunpei YAMAZAKI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of Current Sensing and Control for Interdigitated Lateral Se...
- Publication number 20250006832
- Publication date Jan 2, 2025
- GANPOWER INTERNATIONAL INC
- Zhanming LI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTORS WITH RECESSED FIELD PLATES AND METHODS OF FABRICATION T...
- Publication number 20250006802
- Publication date Jan 2, 2025
- NXP USA, Inc.
- Congyong Zhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20250006624
- Publication date Jan 2, 2025
- SUMITOMO ELECTRIC DEVICE INNOVATIONS, INC.
- Hiroaki MARUYAMA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RESISTOR AND RESISTOR-TRANSISTOR-LOGIC CIRCUIT WITH GAN STRUCTURE A...
- Publication number 20240429228
- Publication date Dec 26, 2024
- UNITED MICROELECTRONICS CORP.
- Kuo-Hsing Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Group III Nitride Doherty Amplifier Using Different Epitaxial Struc...
- Publication number 20240429870
- Publication date Dec 26, 2024
- MACOM Technology Solutions Holdings, Inc.
- Matthew Mellor
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRUCTURES FOR SUPPRESSING ODD-MODE INSTABILITIES
- Publication number 20240429185
- Publication date Dec 26, 2024
- Darrell Glenn Hill
- H01 - BASIC ELECTRIC ELEMENTS

with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Epitaxial oxide materials, structures, and devices

Wafer, optical emission device, method of producing a wafer, and me...

High electron mobility transistor and method for forming the same

Nitride semiconductor device

Semiconductor device structures and methods of manufacturing the same

Semiconductor device and method for producing same

Semiconductor device and method for manufacturing the same

High electron mobility transistor and method of manufacturing the same

Manufacturing method for forminginsulating structure of high electr...

Semiconductor device

Vertically emitting laser devices and chip-scale-package laser devi...

Heterogeneous integration of radio frequency transistor chiplets ha...

III-nitride device

Semiconductor device with an insulating region formed between a con...

Non-linear HEMT devices

Multi-channel transistor

Type III-V semiconductor device with multi-layer barrier region

Semiconductor device for RF integrated circuit

Monolithic semiconductor device and hybrid semiconductor device

High electron mobility transistor device

Nitride-based semiconductor bidirectional switching device and meth...

High electron mobility transistor and method for forming the same

Electronic device employing two-dimensional electron gas with reduc...

Transformer-based drive for GaN devices

Incorporating semiconductors on a polycrystalline diamond substrate

Nitride semiconductor, semiconductor device, and method for manufac...

Nitride semiconductor device with element isolation area

P type gallium nitride conformal epitaxial structure over thick buf...

Nitride semiconductor device comprising layered structure of active...

Group III nitride-based transistor device

Patents Applicationslast 30 patents

GAN-BASED HEMT STRUCTURE HAVING MULTI-THRESHOLD VOLTAGE, AND PREPAR...

HYBRID TYPE AlGaN/GaN HEMT DEVICE

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

SEMICONDUCTOR SUBSTRATE, SEMICONDUCTOR COMPONENT AND METHODS

HEMT TRANSISTOR WITH ADJUSTED GATE-SOURCE DISTANCE, AND MANUFACTURI...

CONTACT STRUCTURE FOR III-NITRIDE TRANSISTORS WITH CAP LAYERS

HIGH ELECTRON MOBILITY TRANSISTOR WITH HELPING GATE

N-POLAR III-NITRIDE DEVICE STRUCTURES WITH A P-TYPE LAYER

SEMICONDUCTOR DEVICE

NITRIDE SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE AND ELECTRONIC APPARATUS INCLUDING THE SAME

METHOD OF FABRICATING HIGH ELECTRON MOBILITY TRANSISTOR

SEMICONDUCTOR DEVICE FOR POWER AMPLIFICATION

METHODS OF FORMING FILMS INCLUDING SCANDIUM AT LOW TEMPERATURES USI...

SEMICONDUCTOR DEVICE FOR POWER AMPLIFICATION

NITRIDE SEMICONDUCTOR DEVICE

POWER AMPLIFIER SEMICONDUCTOR DEVICE

HIGH ELECTRON MOBILITY TRANSISTOR AND METHOD FOR FABRICATING THE SAME

SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE AND METHOD FOR FORMING THE SAME

NITRIDE SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREFOR

SEMICONDUCTOR SUBSTRATE, SEMICONDUCTOR DEVICE, METHOD FOR PRODUCING...

GAN EPITAXIAL SUBSTRATE

SEMICONDUCTOR DEVICE AND DISPLAY DEVICE INCLUDING THE SAME

Method of Current Sensing and Control for Interdigitated Lateral Se...

TRANSISTORS WITH RECESSED FIELD PLATES AND METHODS OF FABRICATION T...

SEMICONDUCTOR DEVICE

RESISTOR AND RESISTOR-TRANSISTOR-LOGIC CIRCUIT WITH GAN STRUCTURE A...

Group III Nitride Doherty Amplifier Using Different Epitaxial Struc...

STRUCTURES FOR SUPPRESSING ODD-MODE INSTABILITIES