with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer

Industry

CPC
H01L29/7786

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Parent Industries

HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier

Current Industry

H01L29/7786with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer

Industries

Patents Grantslast 30 patents

Information Patent Grant
Vertically emitting laser devices and chip-scale-package laser devi...
- Patent number 12,191,626
- Issue date Jan 7, 2025
- KYOCERA SLD Laser, Inc.
- Melvin McLaurin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Heterogeneous integration of radio frequency transistor chiplets ha...
- Patent number 12,191,295
- Issue date Jan 7, 2025
- PseudolithIC, Inc.
- James F. Buckwalter
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
III-nitride device
- Patent number 12,191,302
- Issue date Jan 7, 2025
- Infineon Technologies Americas Corp.
- Michael A. Briere
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with an insulating region formed between a con...
- Patent number 12,191,383
- Issue date Jan 7, 2025
- NXP USA, INC.
- Bruce Mcrae Green
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Non-linear HEMT devices
- Patent number 12,183,815
- Issue date Dec 31, 2024
- SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
- Abhishek Banerjee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multi-channel transistor
- Patent number 12,183,814
- Issue date Dec 31, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Steven J. Bentley
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Type III-V semiconductor device with multi-layer barrier region
- Patent number 12,183,816
- Issue date Dec 31, 2024
- Infineon Technologies Austria AG
- Korbinian Reiser
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device for RF integrated circuit
- Patent number 12,183,676
- Issue date Dec 31, 2024
- MONDE WIRELESS INC.
- Brian Romanczyk
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Monolithic semiconductor device and hybrid semiconductor device
- Patent number 12,183,817
- Issue date Dec 31, 2024
- NUVOTON TECHNOLOGY CORPORATION JAPAN
- Kaname Motoyoshi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High electron mobility transistor device
- Patent number 12,176,403
- Issue date Dec 24, 2024
- United Microelectronics Corp.
- Chi-Hsiao Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nitride-based semiconductor bidirectional switching device and meth...
- Patent number 12,176,343
- Issue date Dec 24, 2024
- INNOSCIENCE (SUZHOU) TECHNOLOGY CO., LTD.
- Qiyue Zhao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High electron mobility transistor and method for forming the same
- Patent number 12,176,414
- Issue date Dec 24, 2024
- United Microelectronics Corp.
- Po-Yu Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Electronic device employing two-dimensional electron gas with reduc...
- Patent number 12,176,431
- Issue date Dec 24, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Tzu-Wen Shih
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transformer-based drive for GaN devices
- Patent number 12,176,887
- Issue date Dec 24, 2024
- Infineon Technologies Austria AG
- Derek Bernardon
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Incorporating semiconductors on a polycrystalline diamond substrate
- Patent number 12,176,221
- Issue date Dec 24, 2024
- Texas State University
- Raju Ahmed
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Nitride semiconductor, semiconductor device, and method for manufac...
- Patent number 12,170,318
- Issue date Dec 17, 2024
- Kabushiki Kaisha Toshiba
- Toshiki Hikosaka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nitride semiconductor device with element isolation area
- Patent number 12,170,316
- Issue date Dec 17, 2024
- Kabushika Kaisha Toshiba
- Akira Yoshioka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
P type gallium nitride conformal epitaxial structure over thick buf...
- Patent number 12,170,328
- Issue date Dec 17, 2024
- Texas Instruments Incorporated
- Tatsuya Tominari
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nitride semiconductor device comprising layered structure of active...
- Patent number 12,166,083
- Issue date Dec 10, 2024
- Rohm Co., Ltd.
- Yosuke Hata
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Group III nitride-based transistor device
- Patent number 12,166,117
- Issue date Dec 10, 2024
- Infineon Technologies Austria AG
- Luca Sayadi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 12,165,957
- Issue date Dec 10, 2024
- Rohm Co., Ltd.
- Minoru Akutsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Solder resist structure for embedded die packaging of power semicon...
- Patent number 12,166,115
- Issue date Dec 10, 2024
- Infineon Technologies Canada Inc.
- Cameron McKnight-MacNeil
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and fabrication method thereof
- Patent number 12,166,116
- Issue date Dec 10, 2024
- INNOSCIENCE (SUZHOU) TECHNOLOGY CO., LTD.
- Hao Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High-electron-mobility transistor device and method of manufacturin...
- Patent number 12,166,101
- Issue date Dec 10, 2024
- ELECTRONICS AND TELECOMMINICATIONS RESEARCH INSTITUTE
- Soo Cheol Kang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for manufacturing the same
- Patent number 12,166,102
- Issue date Dec 10, 2024
- INNOSCIENCE (SUZHOU) TECHNOLOGY CO., LTD.
- Ronghui Hao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device structures and methods of manufacturing the same
- Patent number 12,166,114
- Issue date Dec 10, 2024
- INNOSCIENCE (SUZHOU) SEMICONDUCTOR CO., LTD.
- Jingyu Shen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Electronic device
- Patent number 12,166,033
- Issue date Dec 10, 2024
- INNOLUX CORPORATION
- Chin-Lung Ting
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing a gate terminal of a HEMT device, and HEMT...
- Patent number 12,165,871
- Issue date Dec 10, 2024
- STMicroelectronics S.r.l.
- Ferdinando Iucolano
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High electron mobility transistors (HEMTS) including a yttrium (Y)...
- Patent number 12,166,118
- Issue date Dec 10, 2024
- Qorvo US, Inc.
- Edward Beam
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gallium nitride transistor with a doped region
- Patent number 12,166,119
- Issue date Dec 10, 2024
- Texas Instruments Incorporated
- Dong Seup Lee
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR FORMING THE SAME
- Publication number 20250006831
- Publication date Jan 2, 2025
- Vanguard International Semiconductor Corporation
- Cheng-Wei CHOU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NITRIDE SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREFOR
- Publication number 20250006798
- Publication date Jan 2, 2025
- Panasonic Intellectual Property Management Co., Ltd.
- Hideyuki OKITA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR SUBSTRATE, SEMICONDUCTOR DEVICE, METHOD FOR PRODUCING...
- Publication number 20250006799
- Publication date Jan 2, 2025
- AIR WATER INC.
- Keisuke KAWAMURA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GAN EPITAXIAL SUBSTRATE
- Publication number 20250003113
- Publication date Jan 2, 2025
- MITSUBISHI CHEMICAL CORPORATION
- Kenji ISO
- C30 - CRYSTAL GROWTH
Information Patent Application
SEMICONDUCTOR DEVICE AND DISPLAY DEVICE INCLUDING THE SAME
- Publication number 20250006846
- Publication date Jan 2, 2025
- Semiconductor Energy Laboratory Co., Ltd.
- Shunpei YAMAZAKI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTORS WITH RECESSED FIELD PLATES AND METHODS OF FABRICATION T...
- Publication number 20250006802
- Publication date Jan 2, 2025
- NXP USA, Inc.
- Congyong Zhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of Current Sensing and Control for Interdigitated Lateral Se...
- Publication number 20250006832
- Publication date Jan 2, 2025
- GANPOWER INTERNATIONAL INC
- Zhanming LI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20250006624
- Publication date Jan 2, 2025
- SUMITOMO ELECTRIC DEVICE INNOVATIONS, INC.
- Hiroaki MARUYAMA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RESISTOR AND RESISTOR-TRANSISTOR-LOGIC CIRCUIT WITH GAN STRUCTURE A...
- Publication number 20240429228
- Publication date Dec 26, 2024
- UNITED MICROELECTRONICS CORP.
- Kuo-Hsing Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRUCTURES FOR SUPPRESSING ODD-MODE INSTABILITIES
- Publication number 20240429185
- Publication date Dec 26, 2024
- Darrell Glenn Hill
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Group III Nitride Doherty Amplifier Using Different Epitaxial Struc...
- Publication number 20240429870
- Publication date Dec 26, 2024
- MACOM Technology Solutions Holdings, Inc.
- Matthew Mellor
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Topside Cooling for Semiconductor Device
- Publication number 20240429120
- Publication date Dec 26, 2024
- Wolfspeed, Inc.
- Michael Lee Schuette
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Implantation for Isolated Channel Structures in Group III-Nitride S...
- Publication number 20240429314
- Publication date Dec 26, 2024
- Wolfspeed, Inc.
- Kyle Bothe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR HETEROSTRUCTURES WITH QUATERNARY III-NITRIDE ALLOY
- Publication number 20240429306
- Publication date Dec 26, 2024
- The Regents of the University of Michigan
- Zetian Mi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GaN SEMICONDUCTOR POWER TRANSISTOR WITH SLANTED GATE FIELD PLATE AN...
- Publication number 20240421196
- Publication date Dec 19, 2024
- GaN Systems Inc.
- Abhinandan DIXIT
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GALLIUM NITRIDE DEVICE WITH ARTIFICIAL FIELD PLATES
- Publication number 20240421194
- Publication date Dec 19, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Yi-An LAI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NITRIDE SEMICONDUCTOR DEVICE
- Publication number 20240421195
- Publication date Dec 19, 2024
- ROHM CO., LTD.
- Shinya TAKADO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MODULE ASSEMBLY OF MULTIPLE SEMICONDUCTOR DEVICES WITH INSULATING S...
- Publication number 20240421139
- Publication date Dec 19, 2024
- Transphorm Technology, Inc.
- Davide Bisi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ELECTRIC FIELD MANAGEMENT IN SEMICONDUCTOR DEVICES
- Publication number 20240420957
- Publication date Dec 19, 2024
- Analog Devices, Inc.
- James G. Fiorenza
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH ELECTRON MOBILITY TRANSISTOR AND MANUFACTURING METHOD THEREOF
- Publication number 20240421218
- Publication date Dec 19, 2024
- Lucid Microsystems PTE LTD.
- Zihao Mike GAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH ELECTRON MOBILITY TRANSISTOR AND METHOD FOR FABRICATING THE SAME
- Publication number 20240421219
- Publication date Dec 19, 2024
- UNITED MICROELECTRONICS CORP.
- Kai-Lin Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GROUP III NITRIDE DEVICE
- Publication number 20240413212
- Publication date Dec 12, 2024
- INFINEON TECHNOLOGIES AG
- Albert Birner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FABRICATING HIGH ELECTRON MOBILITY TRANSISTOR
- Publication number 20240413236
- Publication date Dec 12, 2024
- Vanguard International Semiconductor Corporation
- Yang Du
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GAN SUBSTRATE
- Publication number 20240413209
- Publication date Dec 12, 2024
- MITSUBISHI CHEMICAL CORPORATION
- Kenji ISO
- C30 - CRYSTAL GROWTH
Information Patent Application
NITRIDE SEMICONDUCTOR MODULE
- Publication number 20240413235
- Publication date Dec 12, 2024
- Rohm Co., Ltd.
- Hirotaka Otake
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Field Peak Reduction in Semiconductor Devices with Metal Corner Rou...
- Publication number 20240413218
- Publication date Dec 12, 2024
- Wolfspeed, Inc.
- Olof Tornblad
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GALLIUM NITRIDE SEMICONDUCTOR DEVICE
- Publication number 20240413233
- Publication date Dec 12, 2024
- UNITED MICROELECTRONICS CORP.
- Yi-Chuan Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR STRUCTURE USING MULTIPLE TWO-DIMENSIONAL CHANNELS
- Publication number 20240413234
- Publication date Dec 12, 2024
- GAN SYSTEMS INC.
- Marco A. ZUNIGA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GAN EPITAXIAL SUBSTRATE
- Publication number 20240413210
- Publication date Dec 12, 2024
- MITSUBISHI CHEMICAL CORPORATION
- Kenji ISO
- C30 - CRYSTAL GROWTH
Information Patent Application
IMPLANT SCHEME TO IMPROVE HIGH ELECTRON MOBILITY TRANSISTOR CONTACT...
- Publication number 20240405079
- Publication date Dec 5, 2024
- Applied Materials, Inc.
- Qintao ZHANG
- H01 - BASIC ELECTRIC ELEMENTS

with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Vertically emitting laser devices and chip-scale-package laser devi...

Heterogeneous integration of radio frequency transistor chiplets ha...

III-nitride device

Semiconductor device with an insulating region formed between a con...

Non-linear HEMT devices

Multi-channel transistor

Type III-V semiconductor device with multi-layer barrier region

Semiconductor device for RF integrated circuit

Monolithic semiconductor device and hybrid semiconductor device

High electron mobility transistor device

Nitride-based semiconductor bidirectional switching device and meth...

High electron mobility transistor and method for forming the same

Electronic device employing two-dimensional electron gas with reduc...

Transformer-based drive for GaN devices

Incorporating semiconductors on a polycrystalline diamond substrate

Nitride semiconductor, semiconductor device, and method for manufac...

Nitride semiconductor device with element isolation area

P type gallium nitride conformal epitaxial structure over thick buf...

Nitride semiconductor device comprising layered structure of active...

Group III nitride-based transistor device

Semiconductor device

Solder resist structure for embedded die packaging of power semicon...

Semiconductor device and fabrication method thereof

High-electron-mobility transistor device and method of manufacturin...

Semiconductor device and method for manufacturing the same

Semiconductor device structures and methods of manufacturing the same

Electronic device

Method for manufacturing a gate terminal of a HEMT device, and HEMT...

High electron mobility transistors (HEMTS) including a yttrium (Y)...

Gallium nitride transistor with a doped region

Patents Applicationslast 30 patents

SEMICONDUCTOR DEVICE AND METHOD FOR FORMING THE SAME

NITRIDE SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREFOR

SEMICONDUCTOR SUBSTRATE, SEMICONDUCTOR DEVICE, METHOD FOR PRODUCING...

GAN EPITAXIAL SUBSTRATE

SEMICONDUCTOR DEVICE AND DISPLAY DEVICE INCLUDING THE SAME

TRANSISTORS WITH RECESSED FIELD PLATES AND METHODS OF FABRICATION T...

Method of Current Sensing and Control for Interdigitated Lateral Se...

SEMICONDUCTOR DEVICE

RESISTOR AND RESISTOR-TRANSISTOR-LOGIC CIRCUIT WITH GAN STRUCTURE A...

STRUCTURES FOR SUPPRESSING ODD-MODE INSTABILITIES

Group III Nitride Doherty Amplifier Using Different Epitaxial Struc...

Topside Cooling for Semiconductor Device

Implantation for Isolated Channel Structures in Group III-Nitride S...

SEMICONDUCTOR HETEROSTRUCTURES WITH QUATERNARY III-NITRIDE ALLOY

GaN SEMICONDUCTOR POWER TRANSISTOR WITH SLANTED GATE FIELD PLATE AN...

GALLIUM NITRIDE DEVICE WITH ARTIFICIAL FIELD PLATES

NITRIDE SEMICONDUCTOR DEVICE

MODULE ASSEMBLY OF MULTIPLE SEMICONDUCTOR DEVICES WITH INSULATING S...

ELECTRIC FIELD MANAGEMENT IN SEMICONDUCTOR DEVICES

HIGH ELECTRON MOBILITY TRANSISTOR AND MANUFACTURING METHOD THEREOF

HIGH ELECTRON MOBILITY TRANSISTOR AND METHOD FOR FABRICATING THE SAME

GROUP III NITRIDE DEVICE

METHOD OF FABRICATING HIGH ELECTRON MOBILITY TRANSISTOR

GAN SUBSTRATE

NITRIDE SEMICONDUCTOR MODULE

Field Peak Reduction in Semiconductor Devices with Metal Corner Rou...

GALLIUM NITRIDE SEMICONDUCTOR DEVICE

TRANSISTOR STRUCTURE USING MULTIPLE TWO-DIMENSIONAL CHANNELS

GAN EPITAXIAL SUBSTRATE

IMPLANT SCHEME TO IMPROVE HIGH ELECTRON MOBILITY TRANSISTOR CONTACT...