with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer

Industry

CPC
H01L29/7786

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Parent Industries

HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier

Current Industry

H01L29/7786with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer

Industries

Patents Grantslast 30 patents

Information Patent Grant
PGaN enhancement mode HEMTs with dopant diffusion spacer
- Patent number 12,224,337
- Issue date Feb 11, 2025
- Intel Corporation
- Michael Beumer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Epitaxial structure having diffusion barrier layer
- Patent number 12,224,322
- Issue date Feb 11, 2025
- GlobalWafers Co., Ltd.
- Tzu-Yao Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 12,224,331
- Issue date Feb 11, 2025
- NUVOTON TECHNOLOGY CORPORATION JAPAN
- Katsuhiko Kawashima
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Radio frequency transistor amplifiers having self-aligned double im...
- Patent number 12,224,318
- Issue date Feb 11, 2025
- Wolfspeed, Inc.
- Kyle Bothe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
HEMT and fabricating method of the same
- Patent number 12,224,338
- Issue date Feb 11, 2025
- United Microelectronics Corp.
- Huai-Tzu Chiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device incorporating a substrate recess
- Patent number 12,218,202
- Issue date Feb 4, 2025
- Wolfspeed, Inc.
- Evan Jones
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device including compound and nitride members
- Patent number 12,218,232
- Issue date Feb 4, 2025
- Kabushiki Kaisha Toshiba
- Daimotsu Kato
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nitride-based semiconductor bidirectional switching device and meth...
- Patent number 12,218,128
- Issue date Feb 4, 2025
- INNOSCIENCE (SUZHOU) TECHNOLOGY CO., LTD.
- Qiyue Zhao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
HEMT transistor including field plate regions and manufacturing pro...
- Patent number 12,218,231
- Issue date Feb 4, 2025
- STMicroelectronics S.r.l.
- Ferdinando Iucolano
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High electron mobility transistor and method of manufacturing the same
- Patent number 12,218,233
- Issue date Feb 4, 2025
- Samsung Electronics Co., Ltd.
- Jaejoon Oh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Group III nitride based depletion mode differential amplifiers and...
- Patent number 12,212,289
- Issue date Jan 28, 2025
- MACOM Technology Solutions Holdings, Inc.
- Jeremy Fisher
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nitride semiconductor device
- Patent number 12,211,839
- Issue date Jan 28, 2025
- Rohm Co., Ltd.
- Hirotaka Otake
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and fabrication method thereof
- Patent number 12,211,912
- Issue date Jan 28, 2025
- INNOSCIENCE (ZHUHAI) TECHNOLOGY CO., LTD.
- Hao Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Epitaxial oxide materials, structures, and devices
- Patent number 12,206,048
- Issue date Jan 21, 2025
- SILANNA UV TECHNOLOGIES PTE LTD
- Petar Atanackovic
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Wafer, optical emission device, method of producing a wafer, and me...
- Patent number 12,205,987
- Issue date Jan 21, 2025
- Technische Universitat Munchen
- Christian Dangel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High electron mobility transistor and method for forming the same
- Patent number 12,206,000
- Issue date Jan 21, 2025
- United Microelectronics Corp.
- Chih-Tung Yeh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nitride semiconductor device
- Patent number 12,199,173
- Issue date Jan 14, 2025
- Rohm Co., Ltd.
- Hirotaka Otake
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for producing same
- Patent number 12,199,028
- Issue date Jan 14, 2025
- Rohm Co., Ltd.
- Minoru Akutsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device structures and methods of manufacturing the same
- Patent number 12,199,000
- Issue date Jan 14, 2025
- INNOSCIENCE (ZHUHAI) TECHNOLOGY CO., LTD.
- Hang Liao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for manufacturing the same
- Patent number 12,199,017
- Issue date Jan 14, 2025
- INNOSCIENCE (SUZHOU) TECHNOLOGY CO., LTD.
- Xiaoyan Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High electron mobility transistor and method of manufacturing the same
- Patent number 12,199,174
- Issue date Jan 14, 2025
- Samsung Electronics Co., Ltd.
- Junhyuk Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Manufacturing method for forminginsulating structure of high electr...
- Patent number 12,199,175
- Issue date Jan 14, 2025
- United Microelectronics Corp.
- Chun-Ming Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 12,199,176
- Issue date Jan 14, 2025
- United Microelectronics Corp.
- Chun-Ming Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertically emitting laser devices and chip-scale-package laser devi...
- Patent number 12,191,626
- Issue date Jan 7, 2025
- KYOCERA SLD Laser, Inc.
- Melvin McLaurin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Heterogeneous integration of radio frequency transistor chiplets ha...
- Patent number 12,191,295
- Issue date Jan 7, 2025
- PseudolithIC, Inc.
- James F. Buckwalter
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
III-nitride device
- Patent number 12,191,302
- Issue date Jan 7, 2025
- Infineon Technologies Americas Corp.
- Michael A. Briere
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with an insulating region formed between a con...
- Patent number 12,191,383
- Issue date Jan 7, 2025
- NXP USA, INC.
- Bruce Mcrae Green
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Non-linear HEMT devices
- Patent number 12,183,815
- Issue date Dec 31, 2024
- SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
- Abhishek Banerjee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multi-channel transistor
- Patent number 12,183,814
- Issue date Dec 31, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Steven J. Bentley
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Type III-V semiconductor device with multi-layer barrier region
- Patent number 12,183,816
- Issue date Dec 31, 2024
- Infineon Technologies Austria AG
- Korbinian Reiser
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
EPITAXIAL OXIDE MATERIALS, STRUCTURES, AND DEVICES
- Publication number 20250056927
- Publication date Feb 13, 2025
- Silanna UV Technologies Pte Ltd
- Petar Atanackovic
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH ELECTRON MOBILITY TRANSISTOR AND METHOD OF MANUFACTURING THE SAME
- Publication number 20250056827
- Publication date Feb 13, 2025
- Samsung Electronics Co., Ltd.
- Jaejoon OH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DEVICES FOR INTEGRATED FRONT-END CIRCUITS
- Publication number 20250056878
- Publication date Feb 13, 2025
- MONDE Wireless Inc.
- Matthew Guidry
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20250056826
- Publication date Feb 13, 2025
- Kabushiki Kaisha Toshiba
- Yosuke KAJIWARA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NITRIDE-BASED SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE...
- Publication number 20250048668
- Publication date Feb 6, 2025
- INNOSCIENCE (SUZHOU) TECHNOLOGY CO., LTD.
- Liuchang MENG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH GATE ELECTRICAL CONTACT FORMING JUNCTIONS...
- Publication number 20250048667
- Publication date Feb 6, 2025
- TEXAS INSTRUMENTS INCORPORATED
- Ujwal Radhakrishna
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE HAVING A DOPED REGION UNDERLYING A GATE LAYER...
- Publication number 20250040171
- Publication date Jan 30, 2025
- TEXAS INSTRUMENTS INCORPORATED
- Dong Seup LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20250040174
- Publication date Jan 30, 2025
- Kabushiki Kaisha Toshiba
- Jumpei TAJIMA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR ELECTRONIC DEVICE INTEGRATING AN ELECTRONIC COMPONENT...
- Publication number 20250040210
- Publication date Jan 30, 2025
- STMicroelectronics International N.V.
- Riccardo DEPETRO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH ELECTRON MOBILITY TRANSISTOR AND FABRICATION METHOD THEREOF
- Publication number 20250040220
- Publication date Jan 30, 2025
- Vanguard International Semiconductor Corporation
- Chen-Dong Tzou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH-ELECTRON-MOBILITY TRANSISTOR
- Publication number 20250040221
- Publication date Jan 30, 2025
- GLOBALFOUNDRIES U.S. Inc.
- Johnatan A. KANTAROVSKY
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DOUBLE-CHANNEL HEMT DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20250040173
- Publication date Jan 30, 2025
- STMicroelectronics S.r.l.
- Ferdinando IUCOLANO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MANUFACTURING PROCESS OF A SEMICONDUCTOR ELECTRONIC DEVICE INTEGRAT...
- Publication number 20250040163
- Publication date Jan 30, 2025
- STMicroelectronics International N.V.
- Riccardo DEPETRO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GALLIUM NITRIDE (GAN) THREE-DIMENSIONAL INTEGRATED CIRCUIT TECHNOLOGY
- Publication number 20250040231
- Publication date Jan 30, 2025
- Intel Corporation
- Han Wui THEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR ELECTRONIC DEVICE COMPRISING AN ELECTRONIC COMPONENT...
- Publication number 20250040244
- Publication date Jan 30, 2025
- STMicroelectronics International N.V.
- Riccardo DEPETRO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MANUFACTURING AN OHMIC CONTACT FOR A HEMT DEVICE
- Publication number 20250040164
- Publication date Jan 30, 2025
- STMicroelectronics S.r.l.
- Ferdinando IUCOLANO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH ELECTRON MOBILITY TRANSISTOR AND METHOD FOR FORMING THE SAME
- Publication number 20250040172
- Publication date Jan 30, 2025
- UNITED MICROELECTRONICS CORP.
- Po-Yu Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GAN-BASED HEMT STRUCTURE HAVING MULTI-THRESHOLD VOLTAGE, AND PREPAR...
- Publication number 20250031398
- Publication date Jan 23, 2025
- Guangdong Institute of Semiconductor Micro-Nano Manufacturing Technology
- Yaozong ZHONG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HYBRID TYPE AlGaN/GaN HEMT DEVICE
- Publication number 20250031402
- Publication date Jan 23, 2025
- CHIH-SHU HUANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20250031437
- Publication date Jan 23, 2025
- INNOSCIENCE (SUZHOU) SEMICONDUCTOR CO., LTD.
- Xiaoming LIU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR SUBSTRATE, SEMICONDUCTOR COMPONENT AND METHODS
- Publication number 20250029920
- Publication date Jan 23, 2025
- Infineon Technologies Austria AG
- Oliver Blank
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HEMT TRANSISTOR WITH ADJUSTED GATE-SOURCE DISTANCE, AND MANUFACTURI...
- Publication number 20250022947
- Publication date Jan 16, 2025
- STMicroelectronics S.r.l.
- Ferdinando IUCOLANO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CONTACT STRUCTURE FOR III-NITRIDE TRANSISTORS WITH CAP LAYERS
- Publication number 20250022928
- Publication date Jan 16, 2025
- Finwave Semiconductor, Inc.
- Hal Emmer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH ELECTRON MOBILITY TRANSISTOR WITH HELPING GATE
- Publication number 20250022932
- Publication date Jan 16, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chiao-Chun Hsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
N-POLAR III-NITRIDE DEVICE STRUCTURES WITH A P-TYPE LAYER
- Publication number 20250022948
- Publication date Jan 16, 2025
- MONDE Wireless Inc.
- Brian ROMANCZYK
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20250022933
- Publication date Jan 16, 2025
- NUVOTON TECHNOLOGY CORPORATION JAPAN
- Katsuhiko KAWASHIMA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NITRIDE SEMICONDUCTOR DEVICE
- Publication number 20250022921
- Publication date Jan 16, 2025
- Panasonic Holdings Corporation
- Daisuke Shibata
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND ELECTRONIC APPARATUS INCLUDING THE SAME
- Publication number 20250022927
- Publication date Jan 16, 2025
- Samsung Electronics Co., Ltd.
- Youngtek OH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FABRICATING HIGH ELECTRON MOBILITY TRANSISTOR
- Publication number 20250015174
- Publication date Jan 9, 2025
- Vanguard International Semiconductor Corporation
- Yung-Fong Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE FOR POWER AMPLIFICATION
- Publication number 20250015149
- Publication date Jan 9, 2025
- NUVOTON TECHNOLOGY CORPORATION JAPAN
- Katsuhiko KAWASHIMA
- H01 - BASIC ELECTRIC ELEMENTS

with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

PGaN enhancement mode HEMTs with dopant diffusion spacer

Epitaxial structure having diffusion barrier layer

Semiconductor device

Radio frequency transistor amplifiers having self-aligned double im...

HEMT and fabricating method of the same

Semiconductor device incorporating a substrate recess

Semiconductor device including compound and nitride members

Nitride-based semiconductor bidirectional switching device and meth...

HEMT transistor including field plate regions and manufacturing pro...

High electron mobility transistor and method of manufacturing the same

Group III nitride based depletion mode differential amplifiers and...

Nitride semiconductor device

Semiconductor device and fabrication method thereof

Epitaxial oxide materials, structures, and devices

Wafer, optical emission device, method of producing a wafer, and me...

High electron mobility transistor and method for forming the same

Nitride semiconductor device

Semiconductor device and method for producing same

Semiconductor device structures and methods of manufacturing the same

Semiconductor device and method for manufacturing the same

High electron mobility transistor and method of manufacturing the same

Manufacturing method for forminginsulating structure of high electr...

Semiconductor device

Vertically emitting laser devices and chip-scale-package laser devi...

Heterogeneous integration of radio frequency transistor chiplets ha...

III-nitride device

Semiconductor device with an insulating region formed between a con...

Non-linear HEMT devices

Multi-channel transistor

Type III-V semiconductor device with multi-layer barrier region

Patents Applicationslast 30 patents

EPITAXIAL OXIDE MATERIALS, STRUCTURES, AND DEVICES

HIGH ELECTRON MOBILITY TRANSISTOR AND METHOD OF MANUFACTURING THE SAME

DEVICES FOR INTEGRATED FRONT-END CIRCUITS

SEMICONDUCTOR DEVICE

NITRIDE-BASED SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE...

SEMICONDUCTOR DEVICE WITH GATE ELECTRICAL CONTACT FORMING JUNCTIONS...

SEMICONDUCTOR DEVICE HAVING A DOPED REGION UNDERLYING A GATE LAYER...

SEMICONDUCTOR DEVICE

SEMICONDUCTOR ELECTRONIC DEVICE INTEGRATING AN ELECTRONIC COMPONENT...

HIGH ELECTRON MOBILITY TRANSISTOR AND FABRICATION METHOD THEREOF

HIGH-ELECTRON-MOBILITY TRANSISTOR

DOUBLE-CHANNEL HEMT DEVICE AND MANUFACTURING METHOD THEREOF

MANUFACTURING PROCESS OF A SEMICONDUCTOR ELECTRONIC DEVICE INTEGRAT...

GALLIUM NITRIDE (GAN) THREE-DIMENSIONAL INTEGRATED CIRCUIT TECHNOLOGY

SEMICONDUCTOR ELECTRONIC DEVICE COMPRISING AN ELECTRONIC COMPONENT...

METHOD FOR MANUFACTURING AN OHMIC CONTACT FOR A HEMT DEVICE

HIGH ELECTRON MOBILITY TRANSISTOR AND METHOD FOR FORMING THE SAME

GAN-BASED HEMT STRUCTURE HAVING MULTI-THRESHOLD VOLTAGE, AND PREPAR...

HYBRID TYPE AlGaN/GaN HEMT DEVICE

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

SEMICONDUCTOR SUBSTRATE, SEMICONDUCTOR COMPONENT AND METHODS

HEMT TRANSISTOR WITH ADJUSTED GATE-SOURCE DISTANCE, AND MANUFACTURI...

CONTACT STRUCTURE FOR III-NITRIDE TRANSISTORS WITH CAP LAYERS

HIGH ELECTRON MOBILITY TRANSISTOR WITH HELPING GATE

N-POLAR III-NITRIDE DEVICE STRUCTURES WITH A P-TYPE LAYER

SEMICONDUCTOR DEVICE

NITRIDE SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE AND ELECTRONIC APPARATUS INCLUDING THE SAME

METHOD OF FABRICATING HIGH ELECTRON MOBILITY TRANSISTOR

SEMICONDUCTOR DEVICE FOR POWER AMPLIFICATION