with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer

Industry

CPC
H01L29/7786

This industry / category may be too specific. Please go to a parent level for more data

Parent Industries

HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier

Current Industry

H01L29/7786with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer

Industries

Patents Grantslast 30 patents

Information Patent Grant
Semiconductor device structures and methods of manufacturing the same
- Patent number 11,972,996
- Issue date Apr 30, 2024
- INNOSCIENCE (ZHUHAI) TECHNOLOGY CO., LTD.
- Hang Liao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Stacked buffer in transistors
- Patent number 11,973,137
- Issue date Apr 30, 2024
- Indian Institute of Science
- Srinivasan Raghavan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 11,973,135
- Issue date Apr 30, 2024
- Nissan Motor Co., Ltd.
- Keisuke Takemoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Apparatus and circuits including transistors with different thresho...
- Patent number 11,973,078
- Issue date Apr 30, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chan-Hong Chern
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Flexible microwave power transistor and preparation method thereof
- Patent number 11,973,136
- Issue date Apr 30, 2024
- University of Electronic Science and Technology of China
- Yuehang Xu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Super junction gated AlGaN GaN HEMT
- Patent number 11,973,134
- Issue date Apr 30, 2024
- Mitsubishi Electric Research Laboratories, Inc.
- Koon Hoo Teo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
N-polar devices including a depleting layer with improved conductivity
- Patent number 11,973,138
- Issue date Apr 30, 2024
- Transphorm Technology, Inc.
- Geetak Gupta
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with multichannel heterostructure and manufact...
- Patent number 11,961,902
- Issue date Apr 16, 2024
- INNOSCIENCE (ZHUHAI) TECHNOLOGY CO., LTD.
- Anbang Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of fabricating the same
- Patent number 11,961,889
- Issue date Apr 16, 2024
- United Microelectronics Corp.
- Po-Yu Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Extrinsic field termination structures for improving reliability of...
- Patent number 11,961,888
- Issue date Apr 16, 2024
- MACOM Technology Solutions Holdings, Inc.
- Allen W. Hanson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 11,955,542
- Issue date Apr 9, 2024
- Vanguard International Semiconductor Corporation
- Hsin-Chih Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure
- Patent number 11,955,397
- Issue date Apr 9, 2024
- Vanguard International Semiconductor Corporation
- Shin-Cheng Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
III-V semiconductor device with integrated power transistor and sta...
- Patent number 11,955,488
- Issue date Apr 9, 2024
- CAMBRIDGE GAN DEVICES LIMITED
- Florin Udrea
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with strain relaxed layer
- Patent number 11,955,519
- Issue date Apr 9, 2024
- United Microelectronics Corp.
- Yu-Ming Hsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nitride semiconductor with multiple nitride regions of different im...
- Patent number 11,955,520
- Issue date Apr 9, 2024
- Kabushiki Kaisha Toshiba
- Toshiki Hikosaka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Manufacturable thin film gallium and nitrogen containing devices
- Patent number 11,955,521
- Issue date Apr 9, 2024
- KYOCERA SLD Laser, Inc.
- James W. Raring
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for forming the same
- Patent number 11,955,541
- Issue date Apr 9, 2024
- United Microelectronics Corp.
- Chi-Hsiao Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 11,955,411
- Issue date Apr 9, 2024
- Rohm Co., Ltd.
- Koshun Saito
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure and method of forming the same
- Patent number 11,955,522
- Issue date Apr 9, 2024
- Vanguard International Semiconductor Corporation
- Cheng-Wei Chou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power semiconductor device with an auxiliary gate structure
- Patent number 11,955,478
- Issue date Apr 9, 2024
- CAMBRIDGE GAN DEVICES LIMITED
- Martin Arnold
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 11,948,864
- Issue date Apr 2, 2024
- Kabushiki Kaisha Toshiba
- Akira Yoshioka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Epitaxial layers with discontinued aluminium content for III-nitrid...
- Patent number 11,942,521
- Issue date Mar 26, 2024
- INNOSCIENCE (SUZHOU) SEMICONDUCTOR CO., LTD.
- Peng-Yi Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process of forming an electronic device including a doped gate elec...
- Patent number 11,942,326
- Issue date Mar 26, 2024
- SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
- Petr Kostelnik
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure and high electron mobility transistor
- Patent number 11,942,519
- Issue date Mar 26, 2024
- Vanguard International Semiconductor Corporation
- Chih-Yen Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Enhancement mode high electron mobility transistor
- Patent number 11,935,947
- Issue date Mar 19, 2024
- United Microelectronics Corp.
- Chih-Tung Yeh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing nitride semiconductor device
- Patent number 11,935,744
- Issue date Mar 19, 2024
- Sumitomo Electric Industries, Ltd.
- Isao Makabe
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
HEMT and method of fabricating the same
- Patent number 11,935,948
- Issue date Mar 19, 2024
- United Microelectronics Corp.
- Po-Yu Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Circuits and group III-nitride high-electron mobility transistors w...
- Patent number 11,929,428
- Issue date Mar 12, 2024
- Wolfspeed, Inc.
- Thomas J. Smith
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nitride-based semiconductor device and method for manufacturing the...
- Patent number 11,929,429
- Issue date Mar 12, 2024
- INNOSCIENCE (SUZHOU) TECHNOLOGY CO., LTD.
- Ronghui Hao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High electron mobility transistor with doped semiconductor region i...
- Patent number 11,929,430
- Issue date Mar 12, 2024
- Infineon Technologies Austria AG
- Thomas Detzel
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20240145575
- Publication date May 2, 2024
- National Yang Ming Chiao Tung University
- Edward Yi CHANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Manufacturing Method of Forming Semiconductor Device and Semiconduc...
- Publication number 20240145551
- Publication date May 2, 2024
- PANJIT INTERNATIONAL INC.
- Hung Shen Chu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Stacked Multilayer 3D GaN High Electron Mobility Transistor Structu...
- Publication number 20240145478
- Publication date May 2, 2024
- Nanjing Greenchip Semiconductor Co., Ltd.
- Kuang-Po Hsueh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Field-Effect Transistor and Manufacturing Method Therefor
- Publication number 20240136412
- Publication date Apr 25, 2024
- Nippon Telegraph and Telephone Corporation
- Takuya Tsutsumi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
POWER TRANSISTOR
- Publication number 20240136433
- Publication date Apr 25, 2024
- STMicroelectronics (Rousset) SAS
- Loic BOURGUINE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BACK-BARRIER FOR GALLIUM NITRIDE BASED HIGH ELECTRON MOBILITY TRANS...
- Publication number 20240136431
- Publication date Apr 25, 2024
- Northrop Grumman Systems Corporation
- Robert Coffie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FABRICATING SEMICONDUCTOR DEVICE
- Publication number 20240136417
- Publication date Apr 25, 2024
- UNITED MICROELECTRONICS CORP.
- Po-Yu Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH ELECTRON MOBILITY TRANSISTOR AND METHOD FOR FABRICATING THE SAME
- Publication number 20240136422
- Publication date Apr 25, 2024
- National Yang Ming Chiao Tung University
- Edward Yi CHANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH ELECTRON MOBILITY TRANSISTOR AND METHOD FOR FABRICATING THE SAME
- Publication number 20240136423
- Publication date Apr 25, 2024
- UNITED MICROELECTRONICS CORP.
- Chun-Ming Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH ELECTRON MOBILITY TRANSISTOR
- Publication number 20240136432
- Publication date Apr 25, 2024
- National Yang Ming Chiao Tung University
- Edward Yi CHANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NITRIDE SEMICONDUCTOR ELEMENT AND NITRIDE SEMICONDUCTOR DEVICE
- Publication number 20240136434
- Publication date Apr 25, 2024
- ROHM CO., LTD.
- Taojun FANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NITRIDE SEMICONDUCTOR DEVICE
- Publication number 20240128366
- Publication date Apr 18, 2024
- Rohm Co., Ltd.
- Shinya TAKADO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE AND SEMICONDUCTOR DEVICE
- Publication number 20240128325
- Publication date Apr 18, 2024
- Kabushiki Kaisha Toshiba
- Hajime NAGO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DEVICE WITH FIELD PLATES
- Publication number 20240128328
- Publication date Apr 18, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Michael J. ZIERAK
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS OF FORMING SEMICONDUCTOR STRUCTURES AND RESULTING SEMICONDU...
- Publication number 20240128336
- Publication date Apr 18, 2024
- Wolfspeed, Inc.
- Christer Hallin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE AND METHOD OF FORMING THE SAME
- Publication number 20240128341
- Publication date Apr 18, 2024
- Powerchip Semiconductor Manufacturing Corporation
- Chia-Hao Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
- Publication number 20240128352
- Publication date Apr 18, 2024
- Sumitomo Electric Industries, Ltd.
- Akihiro HAYASAKA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH ELECTRON MOBILITY TRANSISTOR AND METHOD FOR FABRICATING THE SAME
- Publication number 20240128353
- Publication date Apr 18, 2024
- UNITED MICROELECTRONICS CORP.
- Chun-Ming Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NITRIDE SEMICONDUCTOR DEVICE
- Publication number 20240128263
- Publication date Apr 18, 2024
- Rohm Co., Ltd.
- Hirotaka Otake
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NITRIDE BASED SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME
- Publication number 20240128365
- Publication date Apr 18, 2024
- DB HiTek Co., Ltd.
- Min Su CHO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NORMALLY-OFF MODE POLARIZATION SUPER JUNCTION GaN-BASED FIELD EFFEC...
- Publication number 20240120404
- Publication date Apr 11, 2024
- POWDEC K.K.
- Hiroji KAWAI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GROUP III-N BASED SEMICONDUCTOR THREE-DIMENSIONAL INTEGRATED CIRCUIT
- Publication number 20240120333
- Publication date Apr 11, 2024
- National Yang Ming Chiao Tung University
- TIAN-LI WU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20240120385
- Publication date Apr 11, 2024
- PANJIT INTERNATIONAL INC.
- Hung Shen Chu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
POWER SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20240120386
- Publication date Apr 11, 2024
- DB HiTek Co., Ltd.
- Ji Houn JUNG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
High-Efficiency Drive Circuit And Bidirectional FET
- Publication number 20240120825
- Publication date Apr 11, 2024
- Wisconsin Alumni Research Foundation
- Chirag Gupta
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20240113175
- Publication date Apr 4, 2024
- Kabushiki Kaisha Toshiba
- Takenori Yasuzumi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
WIDE BANDGAP TRANSISTOR LAYOUT WITH UNEQUAL GATE ELECTRODE FINGER W...
- Publication number 20240113168
- Publication date Apr 4, 2024
- Skyworks Solutions, Inc.
- Guillaume Alexandre BLIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
WIDE BANDGAP TRANSISTOR LAYOUT WITH L-SHAPED GATE ELECTRODES
- Publication number 20240113169
- Publication date Apr 4, 2024
- Skyworks Solutions, Inc.
- Guillaume Alexandre BLIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH ELECTRON MOBILITY TRANSISTOR AND METHOD FOR FABRICATING THE SAME
- Publication number 20240113215
- Publication date Apr 4, 2024
- UNITED MICROELECTRONICS CORP.
- Po-Yu Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
WIDE BANDGAP TRANSISTOR LAYOUT WITH DRAIN ON OUTER EDGE
- Publication number 20240113051
- Publication date Apr 4, 2024
- Skyworks Solutions, Inc.
- Guillaume Alexandre Blin
- H01 - BASIC ELECTRIC ELEMENTS

with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Semiconductor device structures and methods of manufacturing the same

Stacked buffer in transistors

Semiconductor device

Apparatus and circuits including transistors with different thresho...

Flexible microwave power transistor and preparation method thereof

Super junction gated AlGaN GaN HEMT

N-polar devices including a depleting layer with improved conductivity

Semiconductor device with multichannel heterostructure and manufact...

Semiconductor device and method of fabricating the same

Extrinsic field termination structures for improving reliability of...

Semiconductor device

Semiconductor structure

III-V semiconductor device with integrated power transistor and sta...

Semiconductor device with strain relaxed layer

Nitride semiconductor with multiple nitride regions of different im...

Manufacturable thin film gallium and nitrogen containing devices

Semiconductor device and method for forming the same

Semiconductor device

Semiconductor structure and method of forming the same

Power semiconductor device with an auxiliary gate structure

Semiconductor device

Epitaxial layers with discontinued aluminium content for III-nitrid...

Process of forming an electronic device including a doped gate elec...

Semiconductor structure and high electron mobility transistor

Enhancement mode high electron mobility transistor

Method for manufacturing nitride semiconductor device

HEMT and method of fabricating the same

Circuits and group III-nitride high-electron mobility transistors w...

Nitride-based semiconductor device and method for manufacturing the...

High electron mobility transistor with doped semiconductor region i...

Patents Applicationslast 30 patents

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

Manufacturing Method of Forming Semiconductor Device and Semiconduc...

Stacked Multilayer 3D GaN High Electron Mobility Transistor Structu...

Field-Effect Transistor and Manufacturing Method Therefor

POWER TRANSISTOR

BACK-BARRIER FOR GALLIUM NITRIDE BASED HIGH ELECTRON MOBILITY TRANS...

METHOD OF FABRICATING SEMICONDUCTOR DEVICE

HIGH ELECTRON MOBILITY TRANSISTOR AND METHOD FOR FABRICATING THE SAME

HIGH ELECTRON MOBILITY TRANSISTOR AND METHOD FOR FABRICATING THE SAME

HIGH ELECTRON MOBILITY TRANSISTOR

NITRIDE SEMICONDUCTOR ELEMENT AND NITRIDE SEMICONDUCTOR DEVICE

NITRIDE SEMICONDUCTOR DEVICE

SEMICONDUCTOR STRUCTURE AND SEMICONDUCTOR DEVICE

DEVICE WITH FIELD PLATES

METHODS OF FORMING SEMICONDUCTOR STRUCTURES AND RESULTING SEMICONDU...

SEMICONDUCTOR STRUCTURE AND METHOD OF FORMING THE SAME

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

HIGH ELECTRON MOBILITY TRANSISTOR AND METHOD FOR FABRICATING THE SAME

NITRIDE SEMICONDUCTOR DEVICE

NITRIDE BASED SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME

NORMALLY-OFF MODE POLARIZATION SUPER JUNCTION GaN-BASED FIELD EFFEC...

GROUP III-N BASED SEMICONDUCTOR THREE-DIMENSIONAL INTEGRATED CIRCUIT

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

POWER SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

High-Efficiency Drive Circuit And Bidirectional FET

SEMICONDUCTOR DEVICE

WIDE BANDGAP TRANSISTOR LAYOUT WITH UNEQUAL GATE ELECTRODE FINGER W...

WIDE BANDGAP TRANSISTOR LAYOUT WITH L-SHAPED GATE ELECTRODES

HIGH ELECTRON MOBILITY TRANSISTOR AND METHOD FOR FABRICATING THE SAME

WIDE BANDGAP TRANSISTOR LAYOUT WITH DRAIN ON OUTER EDGE