with field effect produced by a PN or other rectifying junction gate

Industry

CPC
H01L29/80

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Parent Industries

HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier

Current Industry

H01L29/80with field effect produced by a PN or other rectifying junction gate

Industries

Patents Grantslast 30 patents

Information Patent Grant
Complementary switch element
- Patent number 11,972,985
- Issue date Apr 30, 2024
- National University Corporation Hokkaido University
- Katsuhiro Tomioka
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Crystalline oxide semiconductor film and semiconductor device
- Patent number 11,967,618
- Issue date Apr 23, 2024
- FLOSFIA INC.
- Isao Takahashi
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Semiconductor device and method of manufacturing the same
- Patent number 11,967,634
- Issue date Apr 23, 2024
- Denso Corporation
- Kensuke Nagata
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 11,955,513
- Issue date Apr 9, 2024
- NISSHINBO MICRO DEVICES INC.
- Makoto Hashimoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor having asymmetric threshold voltage and buck converter
- Patent number 11,936,299
- Issue date Mar 19, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chu Fu Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for preparing semiconductor device with contact structure
- Patent number 11,935,834
- Issue date Mar 19, 2024
- NANYA TECHNOLOGY CORPORATION
- Tse-Yao Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fabrication method for JFET with implant isolation
- Patent number 11,929,440
- Issue date Mar 12, 2024
- NEXGEN POWER SYSTEMS, INC.
- Clifford Drowley
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 11,923,461
- Issue date Mar 5, 2024
- Denso Corporation
- Kenji Kono
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
P-type oxide semiconductor and method for manufacturing same
- Patent number 11,916,103
- Issue date Feb 27, 2024
- FLOSFIA INC.
- Shizuo Fujita
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Regrowth uniformity in GaN vertical devices
- Patent number 11,916,134
- Issue date Feb 27, 2024
- NEXGEN POWER SYSTEMS, INC.
- Clifford Drowley
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical power devices fabricated using implanted methods
- Patent number 11,894,455
- Issue date Feb 6, 2024
- Wolfspeed, Inc.
- Daniel Jenner Lichtenwalner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide field-effect transistors
- Patent number 11,894,454
- Issue date Feb 6, 2024
- SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
- Andrei Konstantinov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
3D semiconductor device and structure with metal layers and a conne...
- Patent number 11,881,443
- Issue date Jan 23, 2024
- Monolithic 3D Inc.
- Zvi Or-Bach
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of manufacturing semiconductor device
- Patent number 11,876,120
- Issue date Jan 16, 2024
- NUVOTON TECHNOLOGY CORPORATION JAPAN
- Yusuke Kanda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Single sided channel mesa power junction field effect transistor
- Patent number 11,869,982
- Issue date Jan 9, 2024
- Monolithic Power Systems, Inc.
- Vipindas Pala
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Low voltage/power junction FET with all-around junction gate
- Patent number 11,869,983
- Issue date Jan 9, 2024
- International Business Machines Corporation
- Alexander Reznicek
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Germanium-based sensor with junction-gate field effect transistor a...
- Patent number 11,855,237
- Issue date Dec 26, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Jhy-Jyi Sze
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field effect transistor with controllable resistance
- Patent number 11,855,149
- Issue date Dec 26, 2023
- International Business Machines Corporation
- Yulong Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with a passivation layer and method for produc...
- Patent number 11,854,926
- Issue date Dec 26, 2023
- Infineon Technologies AG
- Jens Peter Konrath
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power silicon carbide based semiconductor devices with improved sho...
- Patent number 11,843,061
- Issue date Dec 12, 2023
- Wolfspeed, Inc.
- Kijeong Han
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power semiconductor device having overvoltage protection and method...
- Patent number 11,843,045
- Issue date Dec 12, 2023
- Infineon Technologies Austria AG
- Markus Beninger-Bina
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing an integrated circuit comprising a junctio...
- Patent number 11,830,776
- Issue date Nov 28, 2023
- STMicroelectronics (Crolles 2) SAS
- Jean Jimenez Martinez
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating super-junction based vertical gallium nitride...
- Patent number 11,824,086
- Issue date Nov 21, 2023
- NEXGEN POWER SYSTEMS, INC.
- Hao Cui
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure with shared well
- Patent number 11,798,948
- Issue date Oct 24, 2023
- GLOBALFOUNDRIES U.S. Inc.
- Kaustubh Shanbhag
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate trench power semiconductor devices having improved deep shield...
- Patent number 11,764,295
- Issue date Sep 19, 2023
- Wolfspeed, Inc.
- Woongsun Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dielectric and isolation lower fin material for fin-based electronics
- Patent number 11,764,260
- Issue date Sep 19, 2023
- Tahoe Research, LTD.
- Walid M. Hafez
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with contact structure and method for preparin...
- Patent number 11,749,730
- Issue date Sep 5, 2023
- NANYA TECHNOLOGY CORPORATION
- Tse-Yao Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three dimensional vertically structured electronic devices
- Patent number 11,742,424
- Issue date Aug 29, 2023
- Lawrence Livermore National Security, LLC
- Adam Conway
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
3D semiconductor device and structure with metal layers and a conne...
- Patent number 11,735,501
- Issue date Aug 22, 2023
- Monolithic 3D Inc.
- Zvi Or-Bach
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit devices with well regions and methods for formin...
- Patent number 11,735,485
- Issue date Aug 22, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chi-Feng Huang
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Diamond-Capped Gallium Oxide Transistor
- Publication number 20240136180
- Publication date Apr 25, 2024
- The Government of the United States of America, as represented by the Secreta...
- Marko J. Tadjer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
3D SEMICONDUCTOR DEVICE AND STRUCTURE WITH METAL LAYERS AND A CONNE...
- Publication number 20240128165
- Publication date Apr 18, 2024
- Monolithic 3D Inc.
- Zvi Or-Bach
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE AND METHOD OF FORMING THEREOF
- Publication number 20240120410
- Publication date Apr 11, 2024
- Hon Young Semiconductor Corporation
- Yu-Tsu LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ISOLATION STRUCTURES OF SEMICONDUCTOR DEVICES
- Publication number 20240120373
- Publication date Apr 11, 2024
- GLOBALFOUNDRIES U.S. Inc.
- HONG YU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE AND METHOD OF FORMING THEREOF
- Publication number 20240120411
- Publication date Apr 11, 2024
- Hon Young Semiconductor Corporation
- Yu-Tsu LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
3D SEMICONDUCTOR DEVICES AND STRUCTURES WITH METAL LAYERS
- Publication number 20240120332
- Publication date Apr 11, 2024
- Monolithic 3D Inc.
- Zvi Or-Bach
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FABRICATING SUPER-JUNCTION BASED VERTICAL GALLIUM NITRIDE...
- Publication number 20240105767
- Publication date Mar 28, 2024
- NEXGEN POWER SYSTEMS, INC.
- Hao Cui
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Germanium-Based Sensor with Junction-Gate Field Effect Transistor a...
- Publication number 20240105877
- Publication date Mar 28, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Jhy-Jyi Sze
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR POWER DEVICE WITH IMPROVED RUGGEDNESS
- Publication number 20240096933
- Publication date Mar 21, 2024
- NEXPERIA B.V.
- Georgio El Zammar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LOW GATE CURRENT JUNCTION FIELD EFFECT TRANSISTOR DEVICE ARCHITECTURE
- Publication number 20240088229
- Publication date Mar 14, 2024
- Analog Devices International Unlimited Company
- Edward John Coyne
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL JUNCTION FIELD EFFECT TRANSISTOR INCLUDING A PLURALITY OF...
- Publication number 20240079503
- Publication date Mar 7, 2024
- Infineon Technologies Austria AG
- Hans Weber
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH TRENCH STRUCTURES AND METHOD FOR MANUFACT...
- Publication number 20240072160
- Publication date Feb 29, 2024
- Monolithic Power Systems, Inc.
- Haifeng Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON-ON-INSULATOR (SOI) DEVICE HAVING VARIABLE THICKNESS DEVICE...
- Publication number 20240072159
- Publication date Feb 29, 2024
- Manoj Chandrika Reghunathan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
JUNCTION FIELD-EFFECT TRANSISTORS IMPLEMENTED IN A WIDE BANDGAP SEM...
- Publication number 20240063309
- Publication date Feb 22, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Francois Hebert
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH INTEGRATED JUNCTION FIELD EFFECT TRANSIST...
- Publication number 20240055511
- Publication date Feb 15, 2024
- Monolithic Power Systems, Inc.
- Vipindas Pala
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH INTEGRATED JUNCTION FIELD EFFECT TRANSIST...
- Publication number 20240055512
- Publication date Feb 15, 2024
- Monolithic Power Systems, Inc.
- Vipindas Pala
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH INTEGRATED JUNCTION FIELD EFFECT TRANSIST...
- Publication number 20240055514
- Publication date Feb 15, 2024
- Monolithic Power Systems, Inc.
- Vipindas Pala
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH INTEGRATED JUNCTION FIELD EFFECT TRANSIST...
- Publication number 20240055513
- Publication date Feb 15, 2024
- Monolithic Power Systems, Inc.
- Vipindas Pala
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
3D STACKED FIELD-EFFECT TRANSISTOR DEVICE WITH PN JUNCTION STRUCTURE
- Publication number 20240047539
- Publication date Feb 8, 2024
- Samsung Electronics Co., Ltd.
- Ming HE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS OF FORMING UNIFORMLY DOPED DEEP IMPLANTED REGIONS IN SILICO...
- Publication number 20230420575
- Publication date Dec 28, 2023
- Wolfspeed, Inc.
- Rahul R. Potera
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES HAVING ON-CHIP GATE RESISTORS
- Publication number 20230420451
- Publication date Dec 28, 2023
- Wolfspeed, Inc.
- Rahul R. Potera
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE TRENCH POWER SEMICONDUCTOR DEVICES HAVING IMPROVED DEEP SHIELD...
- Publication number 20230369486
- Publication date Nov 16, 2023
- Wolfspeed, Inc.
- Woongsun Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20230352599
- Publication date Nov 2, 2023
- Mitsubishi Electric Corporation
- Hisashi SAITO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR PREPARING SEMICONDUCTOR DEVICE WITH CONTACT STRUCTURE
- Publication number 20230343841
- Publication date Oct 26, 2023
- NANYA TECHNOLOGY CORPORATION
- TSE-YAO HUANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
3D SEMICONDUCTOR DEVICE AND STRUCTURE WITH METAL LAYERS AND A CONNE...
- Publication number 20230343679
- Publication date Oct 26, 2023
- Monolithic 3D Inc.
- Zvi Or-Bach
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
POWER SEMICONDUCTOR DEVICE WITH SHALLOW CONDUCTION REGION
- Publication number 20230327026
- Publication date Oct 12, 2023
- Wolfspeed, Inc.
- Rahul R. Potera
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR ELEMENT AND SEMICONDUCTOR DEVICE
- Publication number 20230290888
- Publication date Sep 14, 2023
- FLOSFIA INC.
- Hideaki YANAGIDA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20230282694
- Publication date Sep 7, 2023
- Nisshinbo Micro Devices Inc.
- Makoto HASHIMOTO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD EFFECT TRANSISTOR WITH CONTROLLABLE RESISTANCE
- Publication number 20230268396
- Publication date Aug 24, 2023
- International Business Machines Corporation
- Yulong Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRENCH JUNCTION FIELD EFFECT TRANSISTOR HAVING A MESA REGION
- Publication number 20230261117
- Publication date Aug 17, 2023
- Infineon Technologies Austria AG
- Hans Weber
- H01 - BASIC ELECTRIC ELEMENTS

with field effect produced by a PN or other rectifying junction gate

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Complementary switch element

Crystalline oxide semiconductor film and semiconductor device

Semiconductor device and method of manufacturing the same

Semiconductor device

Transistor having asymmetric threshold voltage and buck converter

Method for preparing semiconductor device with contact structure

Fabrication method for JFET with implant isolation

Semiconductor device

P-type oxide semiconductor and method for manufacturing same

Regrowth uniformity in GaN vertical devices

Vertical power devices fabricated using implanted methods

Silicon carbide field-effect transistors

3D semiconductor device and structure with metal layers and a conne...

Semiconductor device and method of manufacturing semiconductor device

Single sided channel mesa power junction field effect transistor

Low voltage/power junction FET with all-around junction gate

Germanium-based sensor with junction-gate field effect transistor a...

Field effect transistor with controllable resistance

Semiconductor device with a passivation layer and method for produc...

Power silicon carbide based semiconductor devices with improved sho...

Power semiconductor device having overvoltage protection and method...

Method for manufacturing an integrated circuit comprising a junctio...

Method of fabricating super-junction based vertical gallium nitride...

Semiconductor structure with shared well

Gate trench power semiconductor devices having improved deep shield...

Dielectric and isolation lower fin material for fin-based electronics

Semiconductor device with contact structure and method for preparin...

Three dimensional vertically structured electronic devices

3D semiconductor device and structure with metal layers and a conne...

Integrated circuit devices with well regions and methods for formin...

Patents Applicationslast 30 patents

Diamond-Capped Gallium Oxide Transistor

3D SEMICONDUCTOR DEVICE AND STRUCTURE WITH METAL LAYERS AND A CONNE...

SEMICONDUCTOR STRUCTURE AND METHOD OF FORMING THEREOF

ISOLATION STRUCTURES OF SEMICONDUCTOR DEVICES

SEMICONDUCTOR STRUCTURE AND METHOD OF FORMING THEREOF

3D SEMICONDUCTOR DEVICES AND STRUCTURES WITH METAL LAYERS

METHOD OF FABRICATING SUPER-JUNCTION BASED VERTICAL GALLIUM NITRIDE...

Germanium-Based Sensor with Junction-Gate Field Effect Transistor a...

SEMICONDUCTOR POWER DEVICE WITH IMPROVED RUGGEDNESS

LOW GATE CURRENT JUNCTION FIELD EFFECT TRANSISTOR DEVICE ARCHITECTURE

VERTICAL JUNCTION FIELD EFFECT TRANSISTOR INCLUDING A PLURALITY OF...

SEMICONDUCTOR DEVICE WITH TRENCH STRUCTURES AND METHOD FOR MANUFACT...

SILICON-ON-INSULATOR (SOI) DEVICE HAVING VARIABLE THICKNESS DEVICE...

JUNCTION FIELD-EFFECT TRANSISTORS IMPLEMENTED IN A WIDE BANDGAP SEM...

SEMICONDUCTOR DEVICE WITH INTEGRATED JUNCTION FIELD EFFECT TRANSIST...

SEMICONDUCTOR DEVICE WITH INTEGRATED JUNCTION FIELD EFFECT TRANSIST...

SEMICONDUCTOR DEVICE WITH INTEGRATED JUNCTION FIELD EFFECT TRANSIST...

SEMICONDUCTOR DEVICE WITH INTEGRATED JUNCTION FIELD EFFECT TRANSIST...

3D STACKED FIELD-EFFECT TRANSISTOR DEVICE WITH PN JUNCTION STRUCTURE

METHODS OF FORMING UNIFORMLY DOPED DEEP IMPLANTED REGIONS IN SILICO...

SEMICONDUCTOR DEVICES HAVING ON-CHIP GATE RESISTORS

GATE TRENCH POWER SEMICONDUCTOR DEVICES HAVING IMPROVED DEEP SHIELD...

SEMICONDUCTOR DEVICE

METHOD FOR PREPARING SEMICONDUCTOR DEVICE WITH CONTACT STRUCTURE

3D SEMICONDUCTOR DEVICE AND STRUCTURE WITH METAL LAYERS AND A CONNE...

POWER SEMICONDUCTOR DEVICE WITH SHALLOW CONDUCTION REGION

SEMICONDUCTOR ELEMENT AND SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE

FIELD EFFECT TRANSISTOR WITH CONTROLLABLE RESISTANCE

TRENCH JUNCTION FIELD EFFECT TRANSISTOR HAVING A MESA REGION