with final source and drain contacts formation strictly before final or dummy gate formation

Industry

CPC
H01L29/66606

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier

Current Industry

H01L29/66606with final source and drain contacts formation strictly before final or dummy gate formation

Industries

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Patents Grantslast 30 patents

Information Patent Grant
Semiconductor device with profiled work-function metal gate electro...
- Patent number 12,176,251
- Issue date Dec 24, 2024
- Taiwan Semiconductor Manufacturing Company Limited
- Da-Yuan Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Contacts for semiconductor devices and methods of forming the same
- Patent number 11,855,162
- Issue date Dec 26, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Meng-Han Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with profiled work-function metal gate electro...
- Patent number 11,804,409
- Issue date Oct 31, 2023
- Taiwan Semiconductor Manufacturing Company Limited
- Da-Yuan Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Contacts for semiconductor devices and methods of forming the same
- Patent number 11,417,739
- Issue date Aug 16, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd
- Meng-Han Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with profiled work-function metal gate electro...
- Patent number 11,075,124
- Issue date Jul 27, 2021
- Taiwan Semiconductor Manufacturing Company Limited
- Da-Yuan Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Threshold voltage control using channel digital etch
- Patent number 10,985,280
- Issue date Apr 20, 2021
- International Business Machines Corporation
- Effendi Leobandung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Threshold voltage control using channel digital etch
- Patent number 10,978,593
- Issue date Apr 13, 2021
- International Business Machines Corporation
- Effendi Leobandung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of forming the same
- Patent number 10,867,999
- Issue date Dec 15, 2020
- United Microelectronics Corp.
- Meng-Chiang Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Metal gate formation through etch back process
- Patent number 10,868,138
- Issue date Dec 15, 2020
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Che-Cheng Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor gate trench engineering to decrease capacitance and resi...
- Patent number 10,784,360
- Issue date Sep 22, 2020
- Intel Corporation
- Seung Hoon Sung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-limiting and confining epitaxial nucleation
- Patent number 10,756,177
- Issue date Aug 25, 2020
- International Business Machines Corporation
- Robin Hsin Kuo Chao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-limiting and confining epitaxial nucleation
- Patent number 10,756,178
- Issue date Aug 25, 2020
- International Business Machines Corporation
- Robin Hsin Kuo Chao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with profiled work-function metal gate electro...
- Patent number 10,699,966
- Issue date Jun 30, 2020
- Taiwan Semiconductor Manufacturing Company Limited
- Da-Yuan Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory chip design for manufacturing
- Patent number 10,672,861
- Issue date Jun 2, 2020
- Marvell International Ltd.
- Runzi Chang
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Self aligned active trench contact
- Patent number 10,665,596
- Issue date May 26, 2020
- Texas Instruments Incorporated
- Steven Alan Lytle
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nanowire field effect transistor device having a replacement gate
- Patent number 10,522,621
- Issue date Dec 31, 2019
- Taiwan Semiconductor Manufacturing Co., Ltd
- Richard Kenneth Oxland
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Method of manufacturing a semiconductor device including a ternary...
- Patent number 10,453,688
- Issue date Oct 22, 2019
- National Chiao Tung University
- Chao-Hsin Chien
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Hard mask layer to reduce loss of isolation material during dummy g...
- Patent number 10,446,399
- Issue date Oct 15, 2019
- GLOBALFOUNDRIES Inc.
- Ruilong Xie
- Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMA...
Information Patent Grant
Semiconductor structure and manufacturing method thereof
- Patent number 10,396,171
- Issue date Aug 27, 2019
- United Microelectronics Corp.
- En-Chiuan Liou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Early gate silicidation in transistor elements
- Patent number 10,304,683
- Issue date May 28, 2019
- GLOBALFOUNDRIES Inc.
- Elliot John Smith
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nanowire field effect transistor having a metal gate surrounding se...
- Patent number 10,276,660
- Issue date Apr 30, 2019
- Taiwan Semiconductor Manufacturing Co., Ltd
- Richard Kenneth Oxland
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Semiconductor structure
- Patent number 10,153,353
- Issue date Dec 11, 2018
- United Microelectronics Corp.
- En-Chiuan Liou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self aligned active trench contact
- Patent number 10,134,746
- Issue date Nov 20, 2018
- Texas Instruments Incorporated
- Steven Alan Lytle
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multi-threshold voltage (Vt) workfunction metal by selective atomic...
- Patent number 10,109,534
- Issue date Oct 23, 2018
- Applied Materials, Inc.
- Adam Brand
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field-effect transistor (FET) devices employing adjacent asymmetric...
- Patent number 10,062,768
- Issue date Aug 28, 2018
- QUALCOMM Incorporated
- Youn Sung Choi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having improved core and input/output device r...
- Patent number 9,985,015
- Issue date May 29, 2018
- Semiconductor Manufacturing International (Shanghai) Corporation
- Xinyun Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Forming silicide regions and resulting MOS devices
- Patent number 9,947,758
- Issue date Apr 17, 2018
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Tan-Chen Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabrication of a field-effect with reduced stray capacit...
- Patent number 9,911,820
- Issue date Mar 6, 2018
- Commissariat a l'Energie Atomique et Aux Energies Alternatives
- Cyrille Le Royer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of forming silicide regions and resulting MOS devices
- Patent number 9,899,494
- Issue date Feb 20, 2018
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Tan-Chen Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Reverse tone self-aligned contact
- Patent number 9,812,536
- Issue date Nov 7, 2017
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Ching-Feng Fu
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Contacts for Semiconductor Devices and Methods of Forming the Same
- Publication number 20240088244
- Publication date Mar 14, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Meng-Han Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH PROFILED WORK-FUNCTION METAL GATE ELECTRO...
- Publication number 20230369132
- Publication date Nov 16, 2023
- Taiwan Semiconductor Manufacturing Company Limited
- Da-Yuan Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Contacts for Semiconductor Devices and Methods of Forming the Same
- Publication number 20220359680
- Publication date Nov 10, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Meng-Han Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH PROFILED WORK-FUNCTION METAL GATE ELECTRO...
- Publication number 20210351085
- Publication date Nov 11, 2021
- Taiwan Semiconductor Manufacturing Company Limited
- Da-Yuan Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR GATE TRENCH ENGINEERING TO DECREASE CAPACITANCE AND RESI...
- Publication number 20200373403
- Publication date Nov 26, 2020
- Intel Corporation
- SEUNG HOON SUNG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH PROFILED WORK-FUNCTION METAL GATE ELECTRO...
- Publication number 20200335404
- Publication date Oct 22, 2020
- Taiwan Semiconductor Manufacturing Company Limited
- Da-Yuan Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME
- Publication number 20200126978
- Publication date Apr 23, 2020
- UNITED MICROELECTRONICS CORP.
- Meng-Chiang Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NANOWIRE FIELD EFFECT TRANSISTOR DEVICE HAVING A REPLACEMENT GATE
- Publication number 20190229186
- Publication date Jul 25, 2019
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Richard Kenneth OXLAND
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
EARLY GATE SILICIDATION IN TRANSISTOR ELEMENTS
- Publication number 20190131133
- Publication date May 2, 2019
- GLOBALFOUNDRIES INC.
- Elliot John Smith
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF
- Publication number 20190081150
- Publication date Mar 14, 2019
- UNITED MICROELECTRONICS CORP.
- En-Chiuan Liou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELF ALIGNED ACTIVE TRENCH CONTACT
- Publication number 20190057969
- Publication date Feb 21, 2019
- TEXAS INSTRUMENTS INCORPORATED
- Steven Alan LYTLE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE
- Publication number 20180350934
- Publication date Dec 6, 2018
- UNITED MICROELECTRONICS CORP.
- En-Chiuan Liou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Methods of Forming Silicide Regions and Resulting MOS Devices
- Publication number 20150044844
- Publication date Feb 12, 2015
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Tan-Chen Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS FOR FABRICATING INTEGRATED CIRCUITS WITH POLYCRYSTALLINE SI...
- Publication number 20140319620
- Publication date Oct 30, 2014
- GLOBALFOUNDRIES, Inc.
- Jan Hoentschel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS OF FORMING CONTACTS TO SOURCE/DRAIN REGIONS OF FINFET DEVICES
- Publication number 20140273369
- Publication date Sep 18, 2014
- GLOBALFOUNDRIES INC.
- Andy C. Wei
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT METAL GATE STRUCTURE HAVING TAPERED PROFILE
- Publication number 20140246712
- Publication date Sep 4, 2014
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Harry-Hak-Lay Chuang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FABRICATING SEMICONDUCTOR DEVICE
- Publication number 20140113425
- Publication date Apr 24, 2014
- UNITED MICROELECTRONICS CORP.
- An-Chi Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTERCONNECTION STRUCTURE FOR N/P METAL GATES
- Publication number 20140045328
- Publication date Feb 13, 2014
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Han-Guan Chew
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Methods for Introducing Carbon to a Semiconductor Structure and Str...
- Publication number 20140015104
- Publication date Jan 16, 2014
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yu-Chen Su
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD EFFECT TRANSISTORS WITH VARYING THRESHOLD VOLTAGES
- Publication number 20140015014
- Publication date Jan 16, 2014
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
High-k Seal for Protection of Replacement Gates
- Publication number 20140004677
- Publication date Jan 2, 2014
- GLOBALFOUNDRIES, Inc.
- Ying Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FORMING GATE, SOURCE, AND DRAIN CONTACTS ON A MOS TRANSI...
- Publication number 20130295734
- Publication date Nov 7, 2013
- Commissariat A L'Energie Atomique et Aux Energies Alternatives
- Heimanu Niebojewski
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METAL GATE SEMICONDUCTOR DEVICE
- Publication number 20130249010
- Publication date Sep 26, 2013
- Taiwan Semiconductor Manufacturing Company, Ltd., ("TSMC")
- Jin-Aun Ng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device and Method of Manufacturing the Same
- Publication number 20130240996
- Publication date Sep 19, 2013
- Huaxiang Yin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMS DEVICE AND METHOD OF FORMING THE SAME
- Publication number 20130221450
- Publication date Aug 29, 2013
- Lexvu Opto Microelectronics Technology (Shanghai) Ltd
- Jianhong Mao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
REPLACEMENT GATE WITH REDUCED GATE LEAKAGE CURRENT
- Publication number 20130217219
- Publication date Aug 22, 2013
- International Business Machines Corporation
- Takashi Ando
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Integrating a First Contact Structure in a Gate Last Process
- Publication number 20130196496
- Publication date Aug 1, 2013
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chiung-Han Yeh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Dummy Gate Structure for Semiconductor Devices
- Publication number 20130175660
- Publication date Jul 11, 2013
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Shih-Chi Fu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
REPLACEMENT GATE MOSFET WITH A HIGH PERFORMANCE GATE ELECTRODE
- Publication number 20130175641
- Publication date Jul 11, 2013
- International Business Machines Corporation
- Zhengwen Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELF-ALIGNED CONTACT FOR REPLACEMENT GATE DEVICES
- Publication number 20130175587
- Publication date Jul 11, 2013
- International Business Machines Corporation
- Ravikumar Ramachandran
- H01 - BASIC ELECTRIC ELEMENTS

with final source and drain contacts formation strictly before final or dummy gate formation

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Semiconductor device with profiled work-function metal gate electro...

Contacts for semiconductor devices and methods of forming the same

Semiconductor device with profiled work-function metal gate electro...

Contacts for semiconductor devices and methods of forming the same

Semiconductor device with profiled work-function metal gate electro...

Threshold voltage control using channel digital etch

Threshold voltage control using channel digital etch

Semiconductor device and method of forming the same

Metal gate formation through etch back process

Transistor gate trench engineering to decrease capacitance and resi...

Self-limiting and confining epitaxial nucleation

Self-limiting and confining epitaxial nucleation

Semiconductor device with profiled work-function metal gate electro...

Memory chip design for manufacturing

Self aligned active trench contact

Nanowire field effect transistor device having a replacement gate

Method of manufacturing a semiconductor device including a ternary...

Hard mask layer to reduce loss of isolation material during dummy g...

Semiconductor structure and manufacturing method thereof

Early gate silicidation in transistor elements

Nanowire field effect transistor having a metal gate surrounding se...

Semiconductor structure

Self aligned active trench contact

Multi-threshold voltage (Vt) workfunction metal by selective atomic...

Field-effect transistor (FET) devices employing adjacent asymmetric...

Semiconductor device having improved core and input/output device r...

Forming silicide regions and resulting MOS devices

Method for fabrication of a field-effect with reduced stray capacit...

Methods of forming silicide regions and resulting MOS devices

Reverse tone self-aligned contact

Patents Applicationslast 30 patents

Contacts for Semiconductor Devices and Methods of Forming the Same

SEMICONDUCTOR DEVICE WITH PROFILED WORK-FUNCTION METAL GATE ELECTRO...

Contacts for Semiconductor Devices and Methods of Forming the Same

SEMICONDUCTOR DEVICE WITH PROFILED WORK-FUNCTION METAL GATE ELECTRO...

TRANSISTOR GATE TRENCH ENGINEERING TO DECREASE CAPACITANCE AND RESI...

SEMICONDUCTOR DEVICE WITH PROFILED WORK-FUNCTION METAL GATE ELECTRO...

SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME

NANOWIRE FIELD EFFECT TRANSISTOR DEVICE HAVING A REPLACEMENT GATE

EARLY GATE SILICIDATION IN TRANSISTOR ELEMENTS

SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF

SELF ALIGNED ACTIVE TRENCH CONTACT

SEMICONDUCTOR STRUCTURE

Methods of Forming Silicide Regions and Resulting MOS Devices

METHODS FOR FABRICATING INTEGRATED CIRCUITS WITH POLYCRYSTALLINE SI...

METHODS OF FORMING CONTACTS TO SOURCE/DRAIN REGIONS OF FINFET DEVICES

INTEGRATED CIRCUIT METAL GATE STRUCTURE HAVING TAPERED PROFILE

METHOD OF FABRICATING SEMICONDUCTOR DEVICE

INTERCONNECTION STRUCTURE FOR N/P METAL GATES

Methods for Introducing Carbon to a Semiconductor Structure and Str...

FIELD EFFECT TRANSISTORS WITH VARYING THRESHOLD VOLTAGES

High-k Seal for Protection of Replacement Gates

METHOD FOR FORMING GATE, SOURCE, AND DRAIN CONTACTS ON A MOS TRANSI...

METAL GATE SEMICONDUCTOR DEVICE

Semiconductor Device and Method of Manufacturing the Same

MEMS DEVICE AND METHOD OF FORMING THE SAME

REPLACEMENT GATE WITH REDUCED GATE LEAKAGE CURRENT

Integrating a First Contact Structure in a Gate Last Process

Dummy Gate Structure for Semiconductor Devices

REPLACEMENT GATE MOSFET WITH A HIGH PERFORMANCE GATE ELECTRODE

SELF-ALIGNED CONTACT FOR REPLACEMENT GATE DEVICES