with final source and drain contacts formation strictly before final or dummy gate formation

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CPC
H01L29/66606

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier

Current Industry

H01L29/66606with final source and drain contacts formation strictly before final or dummy gate formation

Industries

Patents Grantslast 30 patents

Information Patent Grant
Contacts for semiconductor devices and methods of forming the same
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- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
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- International Business Machines Corporation
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- Meng-Chiang Wang
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- Che-Cheng Chang
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Information Patent Grant
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Information Patent Grant
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Method of manufacturing a semiconductor device including a ternary...
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- National Chiao Tung University
- Chao-Hsin Chien
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Information Patent Grant
Hard mask layer to reduce loss of isolation material during dummy g...
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- Issue date Oct 15, 2019
- GLOBALFOUNDRIES Inc.
- Ruilong Xie
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Semiconductor structure and manufacturing method thereof
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- Issue date Aug 27, 2019
- United Microelectronics Corp.
- En-Chiuan Liou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Early gate silicidation in transistor elements
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- Issue date May 28, 2019
- GLOBALFOUNDRIES Inc.
- Elliot John Smith
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
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- Patent number 10,276,660
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- Taiwan Semiconductor Manufacturing Co., Ltd
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Multi-threshold voltage (Vt) workfunction metal by selective atomic...
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- Applied Materials, Inc.
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- Patent number 10,062,768
- Issue date Aug 28, 2018
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Information Patent Grant
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- Patent number 9,985,015
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- Semiconductor Manufacturing International (Shanghai) Corporation
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Information Patent Grant
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- Tan-Chen Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabrication of a field-effect with reduced stray capacit...
- Patent number 9,911,820
- Issue date Mar 6, 2018
- Commissariat a l'Energie Atomique et Aux Energies Alternatives
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- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of forming silicide regions and resulting MOS devices
- Patent number 9,899,494
- Issue date Feb 20, 2018
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Tan-Chen Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Reverse tone self-aligned contact
- Patent number 9,812,536
- Issue date Nov 7, 2017
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Ching-Feng Fu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field effect transistors with varying threshold voltages
- Patent number 9,673,196
- Issue date Jun 6, 2017
- GLOBALFOUNDRIES, INC.
- Thomas N. Adam
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
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- Publication number 20240088244
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- Taiwan Semiconductor Manufacturing Co., Ltd.
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- Publication number 20220359680
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- Publication number 20200373403
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- Publication number 20200335404
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- Publication number 20200126978
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- UNITED MICROELECTRONICS CORP.
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- Richard Kenneth OXLAND
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EARLY GATE SILICIDATION IN TRANSISTOR ELEMENTS
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- Publication date May 2, 2019
- GLOBALFOUNDRIES INC.
- Elliot John Smith
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SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF
- Publication number 20190081150
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- UNITED MICROELECTRONICS CORP.
- En-Chiuan Liou
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SELF ALIGNED ACTIVE TRENCH CONTACT
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- TEXAS INSTRUMENTS INCORPORATED
- Steven Alan LYTLE
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- UNITED MICROELECTRONICS CORP.
- En-Chiuan Liou
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Methods of Forming Silicide Regions and Resulting MOS Devices
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- Taiwan Semiconductor Manufacturing Company, Ltd.
- Tan-Chen Lee
- H01 - BASIC ELECTRIC ELEMENTS
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METHODS FOR FABRICATING INTEGRATED CIRCUITS WITH POLYCRYSTALLINE SI...
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- GLOBALFOUNDRIES, Inc.
- Jan Hoentschel
- H01 - BASIC ELECTRIC ELEMENTS
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METHODS OF FORMING CONTACTS TO SOURCE/DRAIN REGIONS OF FINFET DEVICES
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- GLOBALFOUNDRIES INC.
- Andy C. Wei
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- Harry-Hak-Lay Chuang
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- UNITED MICROELECTRONICS CORP.
- An-Chi Liu
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Information Patent Application
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- Taiwan Semiconductor Manufacturing Company, Ltd.
- Han-Guan Chew
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Methods for Introducing Carbon to a Semiconductor Structure and Str...
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- Publication date Jan 16, 2014
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yu-Chen Su
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD EFFECT TRANSISTORS WITH VARYING THRESHOLD VOLTAGES
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- Publication date Jan 16, 2014
- International Business Machines Corporation
- Kangguo Cheng
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Information Patent Application
High-k Seal for Protection of Replacement Gates
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- Publication date Jan 2, 2014
- GLOBALFOUNDRIES, Inc.
- Ying Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
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METAL GATE SEMICONDUCTOR DEVICE
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- Taiwan Semiconductor Manufacturing Company, Ltd., ("TSMC")
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- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
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- Publication date Sep 19, 2013
- Huaxiang Yin
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Information Patent Application
MEMS DEVICE AND METHOD OF FORMING THE SAME
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- Lexvu Opto Microelectronics Technology (Shanghai) Ltd
- Jianhong Mao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
REPLACEMENT GATE WITH REDUCED GATE LEAKAGE CURRENT
- Publication number 20130217219
- Publication date Aug 22, 2013
- International Business Machines Corporation
- Takashi Ando
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Integrating a First Contact Structure in a Gate Last Process
- Publication number 20130196496
- Publication date Aug 1, 2013
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chiung-Han Yeh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Dummy Gate Structure for Semiconductor Devices
- Publication number 20130175660
- Publication date Jul 11, 2013
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Shih-Chi Fu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
REPLACEMENT GATE MOSFET WITH A HIGH PERFORMANCE GATE ELECTRODE
- Publication number 20130175641
- Publication date Jul 11, 2013
- International Business Machines Corporation
- Zhengwen Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELF-ALIGNED CONTACT FOR REPLACEMENT GATE DEVICES
- Publication number 20130175587
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- International Business Machines Corporation
- Ravikumar Ramachandran
- H01 - BASIC ELECTRIC ELEMENTS

with final source and drain contacts formation strictly before final or dummy gate formation

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Contacts for semiconductor devices and methods of forming the same

Semiconductor device with profiled work-function metal gate electro...

Contacts for semiconductor devices and methods of forming the same

Semiconductor device with profiled work-function metal gate electro...

Threshold voltage control using channel digital etch

Threshold voltage control using channel digital etch

Semiconductor device and method of forming the same

Metal gate formation through etch back process

Transistor gate trench engineering to decrease capacitance and resi...

Self-limiting and confining epitaxial nucleation

Self-limiting and confining epitaxial nucleation

Semiconductor device with profiled work-function metal gate electro...

Memory chip design for manufacturing

Self aligned active trench contact

Nanowire field effect transistor device having a replacement gate

Method of manufacturing a semiconductor device including a ternary...

Hard mask layer to reduce loss of isolation material during dummy g...

Semiconductor structure and manufacturing method thereof

Early gate silicidation in transistor elements

Nanowire field effect transistor having a metal gate surrounding se...

Semiconductor structure

Self aligned active trench contact

Multi-threshold voltage (Vt) workfunction metal by selective atomic...

Field-effect transistor (FET) devices employing adjacent asymmetric...

Semiconductor device having improved core and input/output device r...

Forming silicide regions and resulting MOS devices

Method for fabrication of a field-effect with reduced stray capacit...

Methods of forming silicide regions and resulting MOS devices

Reverse tone self-aligned contact

Field effect transistors with varying threshold voltages

Patents Applicationslast 30 patents

Contacts for Semiconductor Devices and Methods of Forming the Same

SEMICONDUCTOR DEVICE WITH PROFILED WORK-FUNCTION METAL GATE ELECTRO...

Contacts for Semiconductor Devices and Methods of Forming the Same

SEMICONDUCTOR DEVICE WITH PROFILED WORK-FUNCTION METAL GATE ELECTRO...

TRANSISTOR GATE TRENCH ENGINEERING TO DECREASE CAPACITANCE AND RESI...

SEMICONDUCTOR DEVICE WITH PROFILED WORK-FUNCTION METAL GATE ELECTRO...

SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME

NANOWIRE FIELD EFFECT TRANSISTOR DEVICE HAVING A REPLACEMENT GATE

EARLY GATE SILICIDATION IN TRANSISTOR ELEMENTS

SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF

SELF ALIGNED ACTIVE TRENCH CONTACT

SEMICONDUCTOR STRUCTURE

Methods of Forming Silicide Regions and Resulting MOS Devices

METHODS FOR FABRICATING INTEGRATED CIRCUITS WITH POLYCRYSTALLINE SI...

METHODS OF FORMING CONTACTS TO SOURCE/DRAIN REGIONS OF FINFET DEVICES

INTEGRATED CIRCUIT METAL GATE STRUCTURE HAVING TAPERED PROFILE

METHOD OF FABRICATING SEMICONDUCTOR DEVICE

INTERCONNECTION STRUCTURE FOR N/P METAL GATES

Methods for Introducing Carbon to a Semiconductor Structure and Str...

FIELD EFFECT TRANSISTORS WITH VARYING THRESHOLD VOLTAGES

High-k Seal for Protection of Replacement Gates

METHOD FOR FORMING GATE, SOURCE, AND DRAIN CONTACTS ON A MOS TRANSI...

METAL GATE SEMICONDUCTOR DEVICE

Semiconductor Device and Method of Manufacturing the Same

MEMS DEVICE AND METHOD OF FORMING THE SAME

REPLACEMENT GATE WITH REDUCED GATE LEAKAGE CURRENT

Integrating a First Contact Structure in a Gate Last Process

Dummy Gate Structure for Semiconductor Devices

REPLACEMENT GATE MOSFET WITH A HIGH PERFORMANCE GATE ELECTRODE

SELF-ALIGNED CONTACT FOR REPLACEMENT GATE DEVICES