with insulated gate

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CPC
H01L29/1033

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier

Current Industry

H01L29/1033with insulated gate

Industries

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Patents Grantslast 30 patents

Information Patent Grant
Semiconductor device-including source and drain regions and superla...
- Patent number 12,166,081
- Issue date Dec 10, 2024
- Samsung Electronics Co., Ltd.
- Ilgyou Shin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Non-planar gate all-around device and method of fabrication thereof
- Patent number RE50222
- Issue date Nov 26, 2024
- Sony Group Corporation
- Willy Rachmady
Information Patent Grant
Multi-oxide-semiconductor field-effect transistor with stacked sour...
- Patent number 12,154,988
- Issue date Nov 26, 2024
- Samsung Electronics Co., Ltd.
- Sujin Jung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Devices having a semiconductor material that is semimetal in bulk a...
- Patent number 12,148,816
- Issue date Nov 19, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Jean-Pierre Colinge
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Double gate metal-ferroelectric-metal-insulator-semiconductor field...
- Patent number 12,150,309
- Issue date Nov 19, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Yen-Chieh Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon and silicon germanium nanowire structures
- Patent number 12,142,634
- Issue date Nov 12, 2024
- Sony Group Corporation
- Kelin J. Kuhn
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Semiconductor device
- Patent number 12,142,688
- Issue date Nov 12, 2024
- Semiconductor Energy Laboratory Co., Ltd.
- Shunpei Yamazaki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate-all-around field-effect transistor having source side lateral...
- Patent number 12,136,671
- Issue date Nov 5, 2024
- International Business Machines Corporation
- Jingyun Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices
- Patent number 12,132,101
- Issue date Oct 29, 2024
- Samsung Electronics Co., Ltd.
- Beomjin Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for manufacturing the same
- Patent number 12,113,074
- Issue date Oct 8, 2024
- Semiconductor Energy Laboratory Co., Ltd.
- Shunpei Yamazaki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Independent gate length tunability for stacked transistors
- Patent number 12,107,168
- Issue date Oct 1, 2024
- International Business Machines Corporation
- Ruqiang Bao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having channel layers spaced apart in vertical...
- Patent number 12,100,736
- Issue date Sep 24, 2024
- Samsung Electronics Co., Ltd.
- Chanhyeong Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of forming transistors and methods of forming devices compr...
- Patent number 12,100,629
- Issue date Sep 24, 2024
- Micron Technology, Inc.
- Kevin J. Torek
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices
- Patent number 12,094,941
- Issue date Sep 17, 2024
- Samsung Electronics Co., Ltd.
- Seunggwang Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Stacked field effect transistor devices with replacement gate
- Patent number 12,094,937
- Issue date Sep 17, 2024
- International Business Machines Corporation
- Effendi Leobandung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor including two-dimensional (2D) channel
- Patent number 12,087,818
- Issue date Sep 10, 2024
- Samsung Electronics Co., Ltd.
- Minhyun Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High performance 3D vertical transistor device enhancement design
- Patent number 12,087,817
- Issue date Sep 10, 2024
- Tokyo Electron Limited
- Mark I. Gardner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor gate electrodes with voids
- Patent number 12,087,839
- Issue date Sep 10, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Shahaji B. More
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multi-bridge channel field effect transistor with recessed source/d...
- Patent number 12,080,797
- Issue date Sep 3, 2024
- Samsung Electronics Co., Ltd.
- Dohyun Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and manufacturing method thereof
- Patent number 12,080,720
- Issue date Sep 3, 2024
- Semiconductor Energy Laboratory Co., Ltd.
- Shunpei Yamazaki
- G09 - EDUCATION CRYPTOGRAPHY DISPLAY ADVERTISING SEALS
Information Patent Grant
Multiple fin height integrated circuit
- Patent number 12,068,305
- Issue date Aug 20, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Wei-Cheng Lin
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Manufacturing method of semiconductor device
- Patent number 12,062,696
- Issue date Aug 13, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Yi-Tse Hung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Epitaxies of a chemical compound semiconductor
- Patent number 12,062,541
- Issue date Aug 13, 2024
- Taiwan Semiconductor Manufacturing Company Limited & National Chiao-Tung Univ...
- Hung-Wei Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory chip structure having GAA transistors with different thresho...
- Patent number 12,057,487
- Issue date Aug 6, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Jhon Jhy Liaw
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field effect transistor including a downward-protruding gate electr...
- Patent number 12,057,475
- Issue date Aug 6, 2024
- Taiwan Semiconductor Manufacturing Company Limited
- HsinFu Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices having different numbers of stacked channels...
- Patent number 12,051,694
- Issue date Jul 30, 2024
- Samsung Electronics Co., Ltd.
- Chang-Woo Noh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dual side contact structures in semiconductor devices
- Patent number 12,046,634
- Issue date Jul 23, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Cheng-Wei Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nanowire transistor fabrication with hardmask layers
- Patent number 12,046,637
- Issue date Jul 23, 2024
- Sony Group Corporation
- Seung Hoon Sung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of ono integration into logic CMOS flow
- Patent number 12,048,162
- Issue date Jul 23, 2024
- LONGITUDE FLASH MEMORY SOLUTIONS LTD.
- Krishnaswamy Ramkumar
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Contact for semiconductor device and method of forming thereof
- Patent number 12,046,677
- Issue date Jul 23, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Huei-Shan Wu
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20240421161
- Publication date Dec 19, 2024
- Semiconductor Energy Laboratory Co., Ltd.
- Shunpei YAMAZAKI
- G11 - INFORMATION STORAGE
Information Patent Application
NOISE TRANSISTOR
- Publication number 20240421228
- Publication date Dec 19, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Che-Chun Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES FOR USE IN HIGH-PRESSURE ENVIRONMENTS
- Publication number 20240395934
- Publication date Nov 28, 2024
- The Boeing Company
- Leora Peltz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20240395936
- Publication date Nov 28, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Fang-Liang LU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES
- Publication number 20240395931
- Publication date Nov 28, 2024
- Samsung Electronics Co., Ltd.
- Seongjae BYEON
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Devices Having a Semiconductor Material That Is Semimetal in Bulk a...
- Publication number 20240387711
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Jean-Pierre Colinge
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FORMING TRANSISTORS OF DIFFERENT CONFIGURATIONS
- Publication number 20240387746
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Wei-Lun Min
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NANOWIRE TRANSISTOR FABRICATION WITH HARDMASK LAYERS
- Publication number 20240387634
- Publication date Nov 21, 2024
- SONY GROUP CORPORATION
- Seung Hoon Sung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FinFET DEVICE AND METHODS OF FORMING THE SAME
- Publication number 20240372001
- Publication date Nov 7, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Shahaji B. More
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DOUBLE GATE METAL-FERROELECTRIC-METAL-INSULATOR-SEMICONDUCTOR FIELD...
- Publication number 20240373642
- Publication date Nov 7, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yen-Chieh Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE GATE STRUCTURES
- Publication number 20240363717
- Publication date Oct 31, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Shahaji B. More
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Epitaxies of a Chemical Compound Semiconductor
- Publication number 20240363344
- Publication date Oct 31, 2024
- Taiwan Semiconductor Manufacturing Company Limited
- HUNG-WEI YU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20240363688
- Publication date Oct 31, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yi-Tse Hung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Silicon carbide semiconductor device
- Publication number 20240347599
- Publication date Oct 17, 2024
- Fast SiC Semiconductor Incorporated
- Cheng-Tyng YEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT AND METHOD FOR FORMING THE SAME
- Publication number 20240347536
- Publication date Oct 17, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Hsin-Cheng LIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Contact for Semiconductor Device and Method of Forming Thereof
- Publication number 20240339539
- Publication date Oct 10, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Huei-Shan Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Dual Side Contact Structures in Semiconductor Devices
- Publication number 20240339497
- Publication date Oct 10, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Cheng-Wei Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PSEUDOMORPHIC HIGH ELECTRON MOBILITY TRANSISTOR, LOW NOISE AMPLIFIE...
- Publication number 20240332412
- Publication date Oct 3, 2024
- Huawei Technologies Co., Ltd
- Minglang YU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR GATES AND METHODS OF FORMING THE SAME
- Publication number 20240313050
- Publication date Sep 19, 2024
- Taiwan Semiconductor Manufacturering Co.,Ltd.
- Hsin-Yi Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL MOSFET DEVICE AND METHOD OF MANUFACTURING VERTICAL MOSFET...
- Publication number 20240313103
- Publication date Sep 19, 2024
- Beijing Superstring Academy of Memory Technology
- Huilong Zhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Multi-Channel High Electron Mobility Transistor with Reduced Input...
- Publication number 20240304670
- Publication date Sep 12, 2024
- Infineon Technologies Austria AG
- Clemens Ostermaier
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY DEVICES WITH GATE ALL AROUND TRANSISTORS
- Publication number 20240292591
- Publication date Aug 29, 2024
- Taiwan Semiconductor Manufacturing Co., LTD
- Jhon Jhy Liaw
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of Forming Transistor
- Publication number 20240282842
- Publication date Aug 22, 2024
- Taiwan Semiconductor Manufacturing Company Limited
- Jean-Pierre Colinge
- B82 - NANO-TECHNOLOGY
Information Patent Application
GATE-ALL-AROUND FIELD-EFFECT TRANSISTOR DEVICE
- Publication number 20240250123
- Publication date Jul 25, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Kuo-Cheng Chiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE HAVING NANOSHEET TRANSISTOR AND METHODS OF FAB...
- Publication number 20240250125
- Publication date Jul 25, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chih-Ching WANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH BACKSIDE SELF-ALIGNED POWER RAIL AND METH...
- Publication number 20240250141
- Publication date Jul 25, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chih-Chao Chou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
POWER SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20240243195
- Publication date Jul 18, 2024
- DB HiTek Co., Ltd.
- Ji Houn JUNG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20240243173
- Publication date Jul 18, 2024
- Sony Semiconductor Solutions Corporation
- Tetsuo GOCHO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
EDMOS AND FABRICATING METHOD OF THE SAME
- Publication number 20240234572
- Publication date Jul 11, 2024
- UNITED MICROELECTRONICS CORP.
- Liang-An Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR WITH A BODY AND BACK GATE STRUCTURE IN DIFFERENT MATERIA...
- Publication number 20240222440
- Publication date Jul 4, 2024
- Intel Corporation
- Samuel James BADER
- H01 - BASIC ELECTRIC ELEMENTS

with insulated gate

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Semiconductor device-including source and drain regions and superla...

Non-planar gate all-around device and method of fabrication thereof

Multi-oxide-semiconductor field-effect transistor with stacked sour...

Devices having a semiconductor material that is semimetal in bulk a...

Double gate metal-ferroelectric-metal-insulator-semiconductor field...

Silicon and silicon germanium nanowire structures

Semiconductor device

Gate-all-around field-effect transistor having source side lateral...

Semiconductor devices

Semiconductor device and method for manufacturing the same

Independent gate length tunability for stacked transistors

Semiconductor device having channel layers spaced apart in vertical...

Methods of forming transistors and methods of forming devices compr...

Semiconductor devices

Stacked field effect transistor devices with replacement gate

Transistor including two-dimensional (2D) channel

High performance 3D vertical transistor device enhancement design

Transistor gate electrodes with voids

Multi-bridge channel field effect transistor with recessed source/d...

Semiconductor device and manufacturing method thereof

Multiple fin height integrated circuit

Manufacturing method of semiconductor device

Epitaxies of a chemical compound semiconductor

Memory chip structure having GAA transistors with different thresho...

Field effect transistor including a downward-protruding gate electr...

Semiconductor devices having different numbers of stacked channels...

Dual side contact structures in semiconductor devices

Nanowire transistor fabrication with hardmask layers

Method of ono integration into logic CMOS flow

Contact for semiconductor device and method of forming thereof

Patents Applicationslast 30 patents

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

NOISE TRANSISTOR

SEMICONDUCTOR DEVICES FOR USE IN HIGH-PRESSURE ENVIRONMENTS

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

SEMICONDUCTOR DEVICES

Devices Having a Semiconductor Material That Is Semimetal in Bulk a...

METHOD OF FORMING TRANSISTORS OF DIFFERENT CONFIGURATIONS

NANOWIRE TRANSISTOR FABRICATION WITH HARDMASK LAYERS

FinFET DEVICE AND METHODS OF FORMING THE SAME

DOUBLE GATE METAL-FERROELECTRIC-METAL-INSULATOR-SEMICONDUCTOR FIELD...

SEMICONDUCTOR DEVICE GATE STRUCTURES

Epitaxies of a Chemical Compound Semiconductor

SEMICONDUCTOR DEVICE

Silicon carbide semiconductor device

INTEGRATED CIRCUIT AND METHOD FOR FORMING THE SAME

Contact for Semiconductor Device and Method of Forming Thereof

Dual Side Contact Structures in Semiconductor Devices

PSEUDOMORPHIC HIGH ELECTRON MOBILITY TRANSISTOR, LOW NOISE AMPLIFIE...

SEMICONDUCTOR GATES AND METHODS OF FORMING THE SAME

VERTICAL MOSFET DEVICE AND METHOD OF MANUFACTURING VERTICAL MOSFET...

Multi-Channel High Electron Mobility Transistor with Reduced Input...

MEMORY DEVICES WITH GATE ALL AROUND TRANSISTORS

Method of Forming Transistor

GATE-ALL-AROUND FIELD-EFFECT TRANSISTOR DEVICE

SEMICONDUCTOR DEVICE HAVING NANOSHEET TRANSISTOR AND METHODS OF FAB...

SEMICONDUCTOR DEVICE WITH BACKSIDE SELF-ALIGNED POWER RAIL AND METH...

POWER SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

SEMICONDUCTOR DEVICE

EDMOS AND FABRICATING METHOD OF THE SAME

TRANSISTOR WITH A BODY AND BACK GATE STRUCTURE IN DIFFERENT MATERIA...