with inverted single heterostructure, i.e. with active layer formed on top of wide bandgap layer

Industry

CPC
H01L29/7781

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Parent Industries

HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier

Current Industry

H01L29/7781with inverted single heterostructure, i.e. with active layer formed on top of wide bandgap layer

Industries

Patents Grantslast 30 patents

Information Patent Grant
Two dimension material fin sidewall
- Patent number 11,929,286
- Issue date Mar 12, 2024
- TESSERA LLC
- Sami Rosenblatt
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High electron mobility transistor devices having a silicided polysi...
- Patent number 11,923,446
- Issue date Mar 5, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Vibhor Jain
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Diamond semiconductor system and method
- Patent number 11,837,472
- Issue date Dec 5, 2023
- AKHAN SEMICONDUCTOR, INC.
- Adam Khan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for manufacturing the semiconductor...
- Patent number 11,776,966
- Issue date Oct 3, 2023
- Semiconductor Energy Laboratory Co., Ltd.
- Ryota Hodo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and display device including the same
- Patent number 11,721,769
- Issue date Aug 8, 2023
- Semiconductor Energy Laboratory Co., Ltd.
- Shunpei Yamazaki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Quantum dot devices with trenched substrates
- Patent number 11,721,737
- Issue date Aug 8, 2023
- Intel Corporation
- Ravi Pillarisetty
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Charge-induced threshold voltage tuning in III-N transistors
- Patent number 11,715,790
- Issue date Aug 1, 2023
- Intel Corporation
- Nidhi Nidhi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 11,646,366
- Issue date May 9, 2023
- Fujitsu Limited
- Kozo Makiyama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating CMOS FinFETs by selectively etching a straine...
- Patent number 11,581,406
- Issue date Feb 14, 2023
- Daedalus Prime LLC
- Stephen M. Cea
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device for RF integrated circuit
- Patent number 11,557,539
- Issue date Jan 17, 2023
- MONDE WIRELESS INC.
- Brian Romanczyk
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure, HEMT structure and method of forming the same
- Patent number 11,532,740
- Issue date Dec 20, 2022
- Taiwan Semiconductor Manufacturing Company Ltd.
- Yao-Chung Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High electron mobility transistor and fabrication method thereof
- Patent number 11,502,177
- Issue date Nov 15, 2022
- United Microelectronics Corp.
- Shin-Chuan Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High electron mobility transistor and fabrication method thereof
- Patent number 11,489,048
- Issue date Nov 1, 2022
- United Microelectronics Corp.
- Shin-Chuan Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and display device including the same
- Patent number 11,489,076
- Issue date Nov 1, 2022
- Semiconductor Energy Laboratory Co., Ltd.
- Shunpei Yamazaki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Stretchable form of single crystal silicon for high performance ele...
- Patent number 11,456,258
- Issue date Sep 27, 2022
- The Board of Trustees of the University of Illinois
- John A. Rogers
- B81 - MICRO-STRUCTURAL TECHNOLOGY
Information Patent Grant
Epitaxies of a chemical compound semiconductor
- Patent number 11,437,235
- Issue date Sep 6, 2022
- Taiwan Semiconductor Manufacturing Company Limited & National Chiao-Tung Univ...
- Hung-Wei Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making a high power transistor with gate oxide barriers
- Patent number 11,424,355
- Issue date Aug 23, 2022
- Texas Instruments Incorporated
- Nicholas Stephen Dellas
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Two dimension material fin sidewall
- Patent number 11,424,365
- Issue date Aug 23, 2022
- TESSERA LLC
- Sami Rosenblatt
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Group III nitride-based transistor device and method of fabricating...
- Patent number 11,349,012
- Issue date May 31, 2022
- Infineon Technologies Austria AG
- Clemens Ostermaier
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and display device including the same
- Patent number 11,342,462
- Issue date May 24, 2022
- Semiconductor Energy Laboratory Co., Ltd.
- Shunpei Yamazaki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
III-V field effect transistor and semiconductor structure
- Patent number 11,342,439
- Issue date May 24, 2022
- Nuvoton Technology Corporation
- Vivek Ningaraju
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Independent double-gate quantum dot qubits
- Patent number 11,288,586
- Issue date Mar 29, 2022
- Intel Corporation
- Ravi Pillarisetty
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Quantum dot devices with single electron transistor detectors
- Patent number 11,276,756
- Issue date Mar 15, 2022
- Intel Corporation
- Hubert C. George
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Threshold adjustment for quantum dot array devices with metal sourc...
- Patent number 11,264,480
- Issue date Mar 1, 2022
- STMicroelectronics, Inc.
- John H. Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices with core-shell structures
- Patent number 11,245,033
- Issue date Feb 8, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd
- Carlos H. Diaz
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Method of fabricating a semiconductor device with strained SiGe fin...
- Patent number 11,195,919
- Issue date Dec 7, 2021
- Intel Corporation
- Stephen M Cea
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Epitaxial structure of Ga-face group III nitride, active device, an...
- Patent number 11,195,943
- Issue date Dec 7, 2021
- Chih-Shu Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Quantum dot devices with trenched substrates
- Patent number 11,158,714
- Issue date Oct 26, 2021
- Intel Corporation
- Ravi Pillarisetty
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Diamond semiconductor system and method
- Patent number 11,107,684
- Issue date Aug 31, 2021
- AKHAN SEMICONDUCTOR, INC.
- Adam Khan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for manufacturing the semiconductor...
- Patent number 11,101,293
- Issue date Aug 24, 2021
- Semiconductor Energy Laboratory Co., Ltd.
- Ryota Hodo
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
RF Power Transistor Having Off-Axis Layout
- Publication number 20240128368
- Publication date Apr 18, 2024
- Microwave Technology Inc.
- Howard J. Sun
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME
- Publication number 20240088279
- Publication date Mar 14, 2024
- UNITED MICROELECTRONICS CORP.
- Ming-Hua Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH ELECTRON MOBILITY TRANSISTOR DEVICES HAVING A SILICIDED POLYSI...
- Publication number 20240038882
- Publication date Feb 1, 2024
- GLOBALFOUNDRIES U.S. Inc.
- VIBHOR JAIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH ELECTRON MOBILITY TRANSISTOR DEVICES HAVING A SILICIDED POLYSI...
- Publication number 20240038881
- Publication date Feb 1, 2024
- GLOBALFOUNDRIES U.S. Inc.
- VIBHOR JAIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD EFFECT TRANSISTOR DEVICE
- Publication number 20240006523
- Publication date Jan 4, 2024
- Huawei Technologies Co., Ltd
- Samir Mouhoubi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND DISPLAY DEVICE INCLUDING THE SAME
- Publication number 20230378371
- Publication date Nov 23, 2023
- Semiconductor Energy Laboratory Co., Ltd.
- Shunpei YAMAZAKI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEALED CAVITY EMBEDDED IN A SEMICONDUCTOR WAFER
- Publication number 20230299172
- Publication date Sep 21, 2023
- Analog Devices, Inc.
- Yingqi Jiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Field Effect Transistor Device, and Method for Improving Short-Chan...
- Publication number 20230223466
- Publication date Jul 13, 2023
- Soochow University
- Mingxiang Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE FOR RF INTEGRATED CIRCUIT
- Publication number 20230197611
- Publication date Jun 22, 2023
- MONDE Wireless Inc.
- Brian Romanczyk
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CMOS FINFET DEVICE HAVING STRAINED SIGE FINS AND A STRAINED SI CLAD...
- Publication number 20230170388
- Publication date Jun 1, 2023
- Daedalus Prime LLC
- Stephen M. Cea
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE, HEMT STRUCTURE AND METHOD OF FORMING THE SAME
- Publication number 20230123907
- Publication date Apr 20, 2023
- Taiwan Semiconductor Manufacturing company Ltd.
- YAO-CHUNG CHANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH ELECTRON MOBILITY TRANSISTOR DEVICES HAVING A SILICIDED POLYSI...
- Publication number 20230124962
- Publication date Apr 20, 2023
- GLOBALFOUNDRIES U.S. Inc.
- VIBHOR JAIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME
- Publication number 20220367693
- Publication date Nov 17, 2022
- UNITED MICROELECTRONICS CORP.
- Ming-Hua Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Epitaxies of a Chemical Compound Semiconductor
- Publication number 20220367176
- Publication date Nov 17, 2022
- Taiwan Semiconductor Manufacturing Company Limited
- HUNG-WEI YU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TWO DIMENSION MATERIAL FIN SIDEWALL
- Publication number 20220352376
- Publication date Nov 3, 2022
- TESSERA LLC
- Sami Rosenblatt
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND DISPLAY DEVICE INCLUDING THE SAME
- Publication number 20220285555
- Publication date Sep 8, 2022
- Semiconductor Energy Laboratory Co., Ltd.
- Shunpei YAMAZAKI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Group III Nitride-Based Transistor Device
- Publication number 20220271147
- Publication date Aug 25, 2022
- Clemens Ostermaier
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RARE-EARTH III-NITRIDE N-POLAR HEMT
- Publication number 20220262937
- Publication date Aug 18, 2022
- Raytheon Company
- John Andrew Logan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FRING CAPACITOR, INTEGRATED CIRCUIT AND MANUFACTURING PROCESS FOR...
- Publication number 20220208755
- Publication date Jun 30, 2022
- TEXAS INSTRUMENTS INCORPORATED
- Naveen Tipirneni
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
QUANTUM DOT DEVICES WITH SINGLE ELECTRON TRANSISTOR DETECTORS
- Publication number 20220140086
- Publication date May 5, 2022
- Intel Corporation
- Hubert C. George
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THRESHOLD ADJUSTMENT FOR QUANTUM DOT ARRAY DEVICES WITH METAL SOURC...
- Publication number 20220140110
- Publication date May 5, 2022
- STMicroelectronics, Inc.
- John H. Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CMOS FINFET DEVICE HAVING STRAINED SIGE FINS AND A STRAINED SI CLAD...
- Publication number 20220059656
- Publication date Feb 24, 2022
- Intel Corporation
- Stephen M. Cea
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH ELECTRON MOBILITY TRANSISTOR AND FABRICATION METHOD THEREOF
- Publication number 20210288150
- Publication date Sep 16, 2021
- UNITED MICROELECTRONICS CORP.
- Shin-Chuan Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SEMICONDUCTOR...
- Publication number 20210288077
- Publication date Sep 16, 2021
- Semiconductor Energy Laboratory Co., Ltd.
- Ryota HODO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH ELECTRON MOBILITY TRANSISTOR AND FABRICATION METHOD THEREOF
- Publication number 20210288149
- Publication date Sep 16, 2021
- UNITED MICROELECTRONICS CORP.
- Shin-Chuan Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20210234031
- Publication date Jul 29, 2021
- Fujitsu Limited
- Kozo MAKIYAMA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE, HEMT STRUCTURE AND METHOD OF FORMING THE SAME
- Publication number 20210226047
- Publication date Jul 22, 2021
- Taiwan Semiconductor Manufacturing company Ltd.
- YAO-CHUNG CHANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH ELECTRON MOBILITY TRANSISTOR AND FABRICATION METHOD THEREOF
- Publication number 20210143257
- Publication date May 13, 2021
- UNITED MICROELECTRONICS CORP.
- Shin-Chuan Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
EPITAXIAL STRUCTURE OF GA-FACE GROUP III NITRIDE, ACTIVE DEVICE, AN...
- Publication number 20210083083
- Publication date Mar 18, 2021
- CHIH-SHU HUANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Epitaxies of a Chemical Compound Semiconductor
- Publication number 20210057211
- Publication date Feb 25, 2021
- Taiwan Semiconductor Manufacturing Company Limited
- HUNG-WEI YU
- H01 - BASIC ELECTRIC ELEMENTS

with inverted single heterostructure, i.e. with active layer formed on top of wide bandgap layer

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Two dimension material fin sidewall

High electron mobility transistor devices having a silicided polysi...

Diamond semiconductor system and method

Semiconductor device and method for manufacturing the semiconductor...

Semiconductor device and display device including the same

Quantum dot devices with trenched substrates

Charge-induced threshold voltage tuning in III-N transistors

Semiconductor device

Method of fabricating CMOS FinFETs by selectively etching a straine...

Semiconductor device for RF integrated circuit

Semiconductor structure, HEMT structure and method of forming the same

High electron mobility transistor and fabrication method thereof

High electron mobility transistor and fabrication method thereof

Semiconductor device and display device including the same

Stretchable form of single crystal silicon for high performance ele...

Epitaxies of a chemical compound semiconductor

Method of making a high power transistor with gate oxide barriers

Two dimension material fin sidewall

Group III nitride-based transistor device and method of fabricating...

Semiconductor device and display device including the same

III-V field effect transistor and semiconductor structure

Independent double-gate quantum dot qubits

Quantum dot devices with single electron transistor detectors

Threshold adjustment for quantum dot array devices with metal sourc...

Semiconductor devices with core-shell structures

Method of fabricating a semiconductor device with strained SiGe fin...

Epitaxial structure of Ga-face group III nitride, active device, an...

Quantum dot devices with trenched substrates

Diamond semiconductor system and method

Semiconductor device and method for manufacturing the semiconductor...

Patents Applicationslast 30 patents

RF Power Transistor Having Off-Axis Layout

SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME

HIGH ELECTRON MOBILITY TRANSISTOR DEVICES HAVING A SILICIDED POLYSI...

HIGH ELECTRON MOBILITY TRANSISTOR DEVICES HAVING A SILICIDED POLYSI...

FIELD EFFECT TRANSISTOR DEVICE

SEMICONDUCTOR DEVICE AND DISPLAY DEVICE INCLUDING THE SAME

SEALED CAVITY EMBEDDED IN A SEMICONDUCTOR WAFER

Field Effect Transistor Device, and Method for Improving Short-Chan...

SEMICONDUCTOR DEVICE FOR RF INTEGRATED CIRCUIT

CMOS FINFET DEVICE HAVING STRAINED SIGE FINS AND A STRAINED SI CLAD...

SEMICONDUCTOR STRUCTURE, HEMT STRUCTURE AND METHOD OF FORMING THE SAME

HIGH ELECTRON MOBILITY TRANSISTOR DEVICES HAVING A SILICIDED POLYSI...

SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME

Epitaxies of a Chemical Compound Semiconductor

TWO DIMENSION MATERIAL FIN SIDEWALL

SEMICONDUCTOR DEVICE AND DISPLAY DEVICE INCLUDING THE SAME

Group III Nitride-Based Transistor Device

RARE-EARTH III-NITRIDE N-POLAR HEMT

FRING CAPACITOR, INTEGRATED CIRCUIT AND MANUFACTURING PROCESS FOR...

QUANTUM DOT DEVICES WITH SINGLE ELECTRON TRANSISTOR DETECTORS

THRESHOLD ADJUSTMENT FOR QUANTUM DOT ARRAY DEVICES WITH METAL SOURC...

CMOS FINFET DEVICE HAVING STRAINED SIGE FINS AND A STRAINED SI CLAD...

HIGH ELECTRON MOBILITY TRANSISTOR AND FABRICATION METHOD THEREOF

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SEMICONDUCTOR...

HIGH ELECTRON MOBILITY TRANSISTOR AND FABRICATION METHOD THEREOF

SEMICONDUCTOR DEVICE

SEMICONDUCTOR STRUCTURE, HEMT STRUCTURE AND METHOD OF FORMING THE SAME

HIGH ELECTRON MOBILITY TRANSISTOR AND FABRICATION METHOD THEREOF

EPITAXIAL STRUCTURE OF GA-FACE GROUP III NITRIDE, ACTIVE DEVICE, AN...

Epitaxies of a Chemical Compound Semiconductor