with lightly doped drain or source extension

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CPC
H01L29/7833

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier

Current Industry

H01L29/7833with lightly doped drain or source extension

Industries

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Patents Grantslast 30 patents

Information Patent Grant
Semiconductor device
- Patent number 12,211,534
- Issue date Jan 28, 2025
- Semiconductor Energy Laboratory Co., Ltd.
- Shunpei Yamazaki
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor device including gate oxide layer
- Patent number 12,211,915
- Issue date Jan 28, 2025
- United Microelectronics Corp.
- Ming-Hua Tsai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and related apparatus for reducing gate-induced drain leakag...
- Patent number 12,211,926
- Issue date Jan 28, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Kong-Beng Thei
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for fabricating the same
- Patent number 12,206,007
- Issue date Jan 21, 2025
- United Microelectronics Corp.
- Wen-Wen Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 12,205,622
- Issue date Jan 21, 2025
- Semiconductor Energy Laboratory Co., Ltd.
- Shunpei Yamazaki
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory cell of charge-trapping non-volatile memory
- Patent number 12,199,160
- Issue date Jan 14, 2025
- Ememory Technology Inc.
- Chia-Jung Hsu
- G11 - INFORMATION STORAGE
Information Patent Grant
LDMOS with polysilicon deep drain
- Patent number 12,199,179
- Issue date Jan 14, 2025
- Powerchip Semiconductor Manufacturing Corporation
- Hirokazu Fujimaki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a semiconductor device and a semiconductor...
- Patent number 12,191,304
- Issue date Jan 7, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Tung Ying Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
MOSFET structure with controllable channel length by forming lightl...
- Patent number 12,183,822
- Issue date Dec 31, 2024
- Invention And Collaboration Laboratory Pte. Ltd.
- Chao-Chun Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon-oxide-nitride-oxide-silicon based multi-level non-volatile...
- Patent number 12,183,395
- Issue date Dec 31, 2024
- Infineon Technologies LLC
- Venkatraman Prabhakar
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Method of forming a transistor device with a gate structure having...
- Patent number 12,176,407
- Issue date Dec 24, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chen-Liang Chu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with profiled work-function metal gate electro...
- Patent number 12,176,251
- Issue date Dec 24, 2024
- Taiwan Semiconductor Manufacturing Company Limited
- Da-Yuan Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with diffusion suppression and LDD implants an...
- Patent number 12,154,901
- Issue date Nov 26, 2024
- Texas Instruments Incorporated
- Mahalingam Nandakumar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making an integrated circuit with drain well having multi...
- Patent number 12,148,827
- Issue date Nov 19, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Zheng Long Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Seal method to integrate non-volatile memory (NVM) into logic or bi...
- Patent number 12,144,173
- Issue date Nov 12, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Cheng-Bo Shu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
MOS transistor having substantially parallelepiped-shaped insulatin...
- Patent number 12,125,899
- Issue date Oct 22, 2024
- STMicroelectronics (Rousset) SAS
- Arnaud Regnier
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Asymmetric semiconductor device including LDD region and manufactur...
- Patent number 12,125,909
- Issue date Oct 22, 2024
- Samsung Electronics Co., Ltd.
- Jongsung Woo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method
- Patent number 12,125,908
- Issue date Oct 22, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chia-Ling Chan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Interleaved string drivers, string driver with narrow active region...
- Patent number 12,112,804
- Issue date Oct 8, 2024
- Micron Technology, Inc.
- Michael A. Smith
- G11 - INFORMATION STORAGE
Information Patent Grant
Integrated circuits and manufacturing methods thereof
- Patent number 12,094,880
- Issue date Sep 17, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Ali Keshavarzi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Programmable memory and forming method thereof
- Patent number 12,082,405
- Issue date Sep 3, 2024
- United Microelectronics Corp.
- Hsueh-Chun Hsiao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor structure and related inverter
- Patent number 12,074,205
- Issue date Aug 27, 2024
- Etron Technology, Inc.
- Chao-Chun Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for manufacturing semiconductor device
- Patent number 12,075,635
- Issue date Aug 27, 2024
- Semiconductor Energy Laboratory Co., Ltd.
- Yasuhiko Takemura
- G11 - INFORMATION STORAGE
Information Patent Grant
Methods for forming contact plugs with reduced corrosion
- Patent number 12,068,197
- Issue date Aug 20, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Yu-Sheng Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for FinFET LDD doping
- Patent number 12,068,371
- Issue date Aug 20, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chun Hsiung Tsai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of dopant deactivation underneath gate
- Patent number 12,068,374
- Issue date Aug 20, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Dhanyakumar Mahaveer Sathaiya
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device including gate oxide layer and manufacturing m...
- Patent number 12,057,483
- Issue date Aug 6, 2024
- United Microelectronics Corp.
- Ming-Hua Tsai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device in a level shifter with electrostatic discharg...
- Patent number 12,057,442
- Issue date Aug 6, 2024
- MagnaChip Semiconductor, Ltd.
- Kyong Jin Hwang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a semiconductor device including capping la...
- Patent number 12,046,657
- Issue date Jul 23, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Hsueh Wen Tsau
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Left-ISD-LTSEE {low electrostatic field transistor (LEFT) using imp...
- Patent number 12,033,851
- Issue date Jul 9, 2024
- Mammen Thomas
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
MOS TRANSISTOR HAVING SUBSTANTIALLY PARALLELPIPED-SHAPED INSULATING...
- Publication number 20250040165
- Publication date Jan 30, 2025
- STMicroelectronics (Rousset) SAS
- Arnaud REGNIER
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Laterally-Diffused Metal-Oxide Semiconductor Devices with Reduced G...
- Publication number 20250040178
- Publication date Jan 30, 2025
- Avago Technologies International Sales Pte. Limited
- Akira Ito
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Area Efficient Fin-Based Laterally-Diffused Metal-Oxide Semiconduct...
- Publication number 20250040177
- Publication date Jan 30, 2025
- Avago Technologies International Sales Pte. Limited
- Qing Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR STRUCTURE WITH MULTIPLE VERTICAL THIN BODIES
- Publication number 20250015187
- Publication date Jan 9, 2025
- Invention And Collaboration Laboratory, Inc.
- Chao-Chun Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREOF
- Publication number 20250015161
- Publication date Jan 9, 2025
- UNITED MICROELECTRONICS CORP.
- Wei-Hsuan Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20250006723
- Publication date Jan 2, 2025
- UNITED MICROELECTRONICS CORP.
- ZHIBIAO ZHOU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH VOLTAGE TRANSISTOR STRUCTURE AND METHODS OF FORMATION
- Publication number 20250006731
- Publication date Jan 2, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Kau-Chu LIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTERLEAVED STRING DRIVERS, STRING DRIVER WITH NARROW ACTIVE REGION...
- Publication number 20240428859
- Publication date Dec 26, 2024
- Micron Technology, Inc.
- Michael A. Smith
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BURIED CHANNEL SEMICONDUCTOR DEVICE INCLUDING ENERGY BARRIER MODULA...
- Publication number 20240405125
- Publication date Dec 5, 2024
- TEXAS INSTRUMENTS INCORPORATED
- Jack G. Qian
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FORMING PROGRAMMABLE MEMORY
- Publication number 20240397712
- Publication date Nov 28, 2024
- UNITED MICROELECTRONICS CORP.
- Hsueh-Chun Hsiao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURE
- Publication number 20240387681
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Wen-Kai Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR STRUCTURE AND METHODS OF FORMATION
- Publication number 20240379845
- Publication date Nov 14, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chen-Liang CHU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR DEVICE WITH RECESSED GATE STRUCTURE
- Publication number 20240379789
- Publication date Nov 14, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chen-Liang Chu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT METAL GATE STRUCTURE
- Publication number 20240379811
- Publication date Nov 14, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yong-Tian Hou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE HAVING DOPANT DEACTIVATION UNDERNEATH GATE
- Publication number 20240371940
- Publication date Nov 7, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Dhanyakumar Mahaveer SATHAIYA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR CIRCUIT
- Publication number 20240371950
- Publication date Nov 7, 2024
- ETRON TECHNOLOGY, INC.
- Chao-Chun Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS FOR FORMING CONTACT PLUGS WITH REDUCED CORROSION
- Publication number 20240363409
- Publication date Oct 31, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Yu-Sheng Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE
- Publication number 20240355894
- Publication date Oct 24, 2024
- UNITED MICROELECTRONICS CORP.
- Ming-Hua Tsai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE HAVING MOS TRANSISTOR FOR EFFICIENT STRESS TRA...
- Publication number 20240355924
- Publication date Oct 24, 2024
- Micron Technology, Inc.
- Takuya Imamoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RADIO FREQUENCY (RF) SEMICONDUCTOR DEVICES INCLUDING A GROUND PLANE...
- Publication number 20240321575
- Publication date Sep 26, 2024
- ATOMERA INCORPORATED
- HIDEKI TAKEUCHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS FOR MAKING RADIO FREQUENCY (RF) SEMICONDUCTOR DEVICES INCLU...
- Publication number 20240304443
- Publication date Sep 12, 2024
- ATOMERA INCORPORATED
- HIDEKI TAKEUCHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TWO-ROTATION GATE-EDGE DIODE LEAKAGE REDUCTION FOR MOS
- Publication number 20240304723
- Publication date Sep 12, 2024
- TEXAS INSTRUMENTS INCORPORATED
- Brian Edward Hornung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME
- Publication number 20240290863
- Publication date Aug 29, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Kuo-Cheng CHIANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20240290652
- Publication date Aug 29, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chia-Chung Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE, PHOTOELECTRIC CONVERSION DEVICE, AND ELECTRON...
- Publication number 20240282857
- Publication date Aug 22, 2024
- Canon Kabushiki Kaisha
- TASUKU KANEDA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20240274670
- Publication date Aug 15, 2024
- RENESAS ELECTRONICS CORPORATION
- Yoshiki Yamamoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR DEVICE HAVING A GATE SETBACK FROM A GATE DIELECTRIC
- Publication number 20240258373
- Publication date Aug 1, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Ta-Yuan Kung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR ARRANGEMENT AND METHOD OF MANUFACTURE
- Publication number 20240258374
- Publication date Aug 1, 2024
- Taiwan Semiconductor Manufacturing Company Limited
- Yun-Chi WU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE INCLUDING POROUS SEMICONDUCTOR MATERIAL ADJACE...
- Publication number 20240250120
- Publication date Jul 25, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Shesh Mani PANDEY
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME
- Publication number 20240243180
- Publication date Jul 18, 2024
- Macronix International Co., Ltd.
- I-Chen Yang
- H01 - BASIC ELECTRIC ELEMENTS

with lightly doped drain or source extension

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Semiconductor device

Semiconductor device including gate oxide layer

Method and related apparatus for reducing gate-induced drain leakag...

Semiconductor device and method for fabricating the same

Semiconductor device

Memory cell of charge-trapping non-volatile memory

LDMOS with polysilicon deep drain

Method of manufacturing a semiconductor device and a semiconductor...

MOSFET structure with controllable channel length by forming lightl...

Silicon-oxide-nitride-oxide-silicon based multi-level non-volatile...

Method of forming a transistor device with a gate structure having...

Semiconductor device with profiled work-function metal gate electro...

Semiconductor device with diffusion suppression and LDD implants an...

Method of making an integrated circuit with drain well having multi...

Seal method to integrate non-volatile memory (NVM) into logic or bi...

MOS transistor having substantially parallelepiped-shaped insulatin...

Asymmetric semiconductor device including LDD region and manufactur...

Semiconductor device and method

Interleaved string drivers, string driver with narrow active region...

Integrated circuits and manufacturing methods thereof

Programmable memory and forming method thereof

Transistor structure and related inverter

Semiconductor device and method for manufacturing semiconductor device

Methods for forming contact plugs with reduced corrosion

Method for FinFET LDD doping

Method of dopant deactivation underneath gate

Semiconductor device including gate oxide layer and manufacturing m...

Semiconductor device in a level shifter with electrostatic discharg...

Method of manufacturing a semiconductor device including capping la...

Left-ISD-LTSEE {low electrostatic field transistor (LEFT) using imp...

Patents Applicationslast 30 patents

MOS TRANSISTOR HAVING SUBSTANTIALLY PARALLELPIPED-SHAPED INSULATING...

Laterally-Diffused Metal-Oxide Semiconductor Devices with Reduced G...

Area Efficient Fin-Based Laterally-Diffused Metal-Oxide Semiconduct...

TRANSISTOR STRUCTURE WITH MULTIPLE VERTICAL THIN BODIES

SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREOF

SEMICONDUCTOR DEVICE

HIGH VOLTAGE TRANSISTOR STRUCTURE AND METHODS OF FORMATION

INTERLEAVED STRING DRIVERS, STRING DRIVER WITH NARROW ACTIVE REGION...

BURIED CHANNEL SEMICONDUCTOR DEVICE INCLUDING ENERGY BARRIER MODULA...

METHOD FOR FORMING PROGRAMMABLE MEMORY

SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURE

TRANSISTOR STRUCTURE AND METHODS OF FORMATION

TRANSISTOR DEVICE WITH RECESSED GATE STRUCTURE

INTEGRATED CIRCUIT METAL GATE STRUCTURE

SEMICONDUCTOR DEVICE HAVING DOPANT DEACTIVATION UNDERNEATH GATE

SEMICONDUCTOR CIRCUIT

METHODS FOR FORMING CONTACT PLUGS WITH REDUCED CORROSION

MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE HAVING MOS TRANSISTOR FOR EFFICIENT STRESS TRA...

RADIO FREQUENCY (RF) SEMICONDUCTOR DEVICES INCLUDING A GROUND PLANE...

METHODS FOR MAKING RADIO FREQUENCY (RF) SEMICONDUCTOR DEVICES INCLU...

TWO-ROTATION GATE-EDGE DIODE LEAKAGE REDUCTION FOR MOS

SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME

SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE, PHOTOELECTRIC CONVERSION DEVICE, AND ELECTRON...

SEMICONDUCTOR DEVICE

TRANSISTOR DEVICE HAVING A GATE SETBACK FROM A GATE DIELECTRIC

SEMICONDUCTOR ARRANGEMENT AND METHOD OF MANUFACTURE

SEMICONDUCTOR DEVICE INCLUDING POROUS SEMICONDUCTOR MATERIAL ADJACE...

SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME