with multi-emitter

Industry

CPC
H01L29/66303

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier

Current Industry

H01L29/66303with multi-emitter

Industries

Patents Grantslast 30 patents

Information Patent Grant
Semiconductor device
- Patent number 10,396,189
- Issue date Aug 27, 2019
- Fuji Electric Co., Ltd.
- Tatsuya Naito
- G01 - MEASURING TESTING
Information Patent Grant
Method of forming MOS and bipolar transistors
- Patent number 10,381,344
- Issue date Aug 13, 2019
- STMicroelectronics (Crolles 2) SAS
- Olivier Weber
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Insulated gate turn-off device having low capacitance and low satur...
- Patent number 10,256,331
- Issue date Apr 9, 2019
- Pakal Technologies, Inc.
- Hidenori Akiyama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing semiconductor device
- Patent number 10,177,035
- Issue date Jan 8, 2019
- Renesas Electronics Corporation
- Shinichi Maeda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Latch-up free power transistor
- Patent number 9,722,059
- Issue date Aug 1, 2017
- Infineon Technologies AG
- Alim Karmous
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with multilayer contact and method of manufact...
- Patent number 9,466,688
- Issue date Oct 11, 2016
- NXP B.V.
- Soenke Habenicht
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bipolar junction transistor with multiple emitter fingers
- Patent number 9,159,801
- Issue date Oct 13, 2015
- GLOBALFOUNDRIES, INC.
- Renata Camillo-Castillo
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Circuit configuration and manufacturing processes for vertical tran...
- Patent number 8,338,915
- Issue date Dec 25, 2012
- Alpha and Omega Semiconductor Incorporated
- Shekar Mallikararjunaswamy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a bipolar junction transistor
- Patent number 8,093,132
- Issue date Jan 10, 2012
- Dongbu Hitek Co., Ltd.
- Hyon Chol Lim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Circuit configuration and manufacturing processes for vertical tran...
- Patent number 7,781,826
- Issue date Aug 24, 2010
- Alpha & Omega Semiconductor, Ltd.
- Shekar Mallikararjunaswamy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing semiconductor device
- Patent number 6,444,547
- Issue date Sep 3, 2002
- Rohm Co., Ltd.
- Kazuhisa Sakamoto
- C30 - CRYSTAL GROWTH
Information Patent Grant
Vertical bipolar semiconductor power transistor with an interdigitz...
- Patent number 6,297,118
- Issue date Oct 2, 2001
- STMicroelectronics S.r.l.
- Davide Patti
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical bipolar transistor having a field shield between the metal...
- Patent number 6,239,475
- Issue date May 29, 2001
- Telefonaktiebolaget LM Ericsson (publ)
- Ted Johansson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing vertical bipolar transistor having a field...
- Patent number 6,077,753
- Issue date Jun 20, 2000
- Telefonaktiebolaget LM Ericsson
- Ted Johansson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical bipolar semiconductor power transistor with an interdigiti...
- Patent number 6,069,399
- Issue date May 30, 2000
- STMicroelectronics S.r.l.
- Davide Patti
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ballast resistance for producing varied emitter current flow along...
- Patent number 6,064,109
- Issue date May 16, 2000
- SGS-Thomson Microelectronics, Inc.
- Richard A. Blanchard
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bipolar power transistor with buried base and interdigitated geometry
- Patent number 5,998,855
- Issue date Dec 7, 1999
- SGS-Thomson Microelectronics S.r.l.
- Davide Patti
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bipolar Silicon transistor with arsenic and phosphorous ratio
- Patent number 5,965,929
- Issue date Oct 12, 1999
- Siemens Aktiengesellschaft
- Klaus Gnannt
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Contacting process using O-SIPOS layer
- Patent number 5,661,079
- Issue date Aug 26, 1997
- Temic Telefunken Microelectronic GmbH
- Hartmut Harmel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fully walled emitter-base in a bipolar transistor
- Patent number 5,614,758
- Issue date Mar 25, 1997
- Hewlett-Packard Company
- Francois Hebert
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing increased conductivity base contact/feeders...
- Patent number 5,492,844
- Issue date Feb 20, 1996
- SGS-Thomson Microelectronics, Inc.
- William P. Imhauser
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated thin film approach to achieve high ballast levels for ov...
- Patent number 5,444,292
- Issue date Aug 22, 1995
- SGS-Thomson Microelectronics, Inc.
- William P. Imhauser
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making vertically stacked bipolar semiconductor structure
- Patent number 5,426,059
- Issue date Jun 20, 1995
- Daniel G. Queyssac
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making a high conductivity p-plus region for self-aligned...
- Patent number 5,416,032
- Issue date May 16, 1995
- SGS-Thomson Microelectronics, Inc.
- William P. Imhauser
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Inverted epitaxial process semiconductor devices
- Patent number 5,416,354
- Issue date May 16, 1995
- Unitrode Corporation
- Scott C. Blackstone
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a semiconductor device whereby a laterally...
- Patent number 5,405,789
- Issue date Apr 11, 1995
- U.S. Philips Corporation
- Ronald Dekker
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing an emitter base self alignment structure
- Patent number 5,376,563
- Issue date Dec 27, 1994
- SGS-Thomson Microelectronics, Inc.
- William P. Imhauser
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bipolar transistor structure using ballast resistor
- Patent number 5,374,844
- Issue date Dec 20, 1994
- Micrel, Inc.
- James C. Moyer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making and trimming ballast resistors and barrier metal i...
- Patent number 5,336,631
- Issue date Aug 9, 1994
- Westinghouse Electric Corporation
- Paul A. Potyraj
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming a bilevel, self aligned, low base resistance semi...
- Patent number 5,328,857
- Issue date Jul 12, 1994
- SGS-Thomson Microelectronics, Inc.
- William P. Imhauser
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20230326994
- Publication date Oct 12, 2023
- Samsung Electronics Co., Ltd.
- Sungil Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH MULTILAYER CONTACT AND METHOD OF MANUFACT...
- Publication number 20160218193
- Publication date Jul 28, 2016
- NXP B.V.
- Soenke HABENICHT
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRUCTURES AND TECHNIQUES FOR USING SEMICONDUCTOR BODY TO CONSTRUCT...
- Publication number 20140131711
- Publication date May 15, 2014
- Shine C. Chung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BIPOLAR JUNCTION TRANSISTOR WITH MULTIPLE EMITTER FINGERS
- Publication number 20130119508
- Publication date May 16, 2013
- International Business Machines Corporation
- Renata Camillo-Castillo
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
SEMICONDUCTOR DEVICE WITH MULTILAYER CONTACT AND METHOD OF MANUFACT...
- Publication number 20120248575
- Publication date Oct 4, 2012
- NXP B.V.
- Soenke Habenicht
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Circuit configuration and manufacturing processes for vertical tran...
- Publication number 20100314716
- Publication date Dec 16, 2010
- Shekar Mallikararjunaswamy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Bipolar Junction Transistor and Method of Manufacturing the Same
- Publication number 20100163872
- Publication date Jul 1, 2010
- Hyon Chol LIM
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Circuit configuration and manufacturing processes for vertical tran...
- Publication number 20080121988
- Publication date May 29, 2008
- Alpha & Omega Semiconductor, LTD.
- Shekar Mallikararjunaswamy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
- Publication number 20020001925
- Publication date Jan 3, 2002
- KAZUHISA SAKAMOTO
- C30 - CRYSTAL GROWTH

with multi-emitter

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Semiconductor device

Method of forming MOS and bipolar transistors

Insulated gate turn-off device having low capacitance and low satur...

Method of manufacturing semiconductor device

Latch-up free power transistor

Semiconductor device with multilayer contact and method of manufact...

Bipolar junction transistor with multiple emitter fingers

Circuit configuration and manufacturing processes for vertical tran...

Method of manufacturing a bipolar junction transistor

Circuit configuration and manufacturing processes for vertical tran...

Method for manufacturing semiconductor device

Vertical bipolar semiconductor power transistor with an interdigitz...

Vertical bipolar transistor having a field shield between the metal...

Method for manufacturing vertical bipolar transistor having a field...

Vertical bipolar semiconductor power transistor with an interdigiti...

Ballast resistance for producing varied emitter current flow along...

Bipolar power transistor with buried base and interdigitated geometry

Bipolar Silicon transistor with arsenic and phosphorous ratio

Contacting process using O-SIPOS layer

Fully walled emitter-base in a bipolar transistor

Method of manufacturing increased conductivity base contact/feeders...

Integrated thin film approach to achieve high ballast levels for ov...

Method of making vertically stacked bipolar semiconductor structure

Method of making a high conductivity p-plus region for self-aligned...

Inverted epitaxial process semiconductor devices

Method of manufacturing a semiconductor device whereby a laterally...

Method of manufacturing an emitter base self alignment structure

Bipolar transistor structure using ballast resistor

Method of making and trimming ballast resistors and barrier metal i...

Method of forming a bilevel, self aligned, low base resistance semi...

Patents Applicationslast 30 patents

SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE WITH MULTILAYER CONTACT AND METHOD OF MANUFACT...

STRUCTURES AND TECHNIQUES FOR USING SEMICONDUCTOR BODY TO CONSTRUCT...

BIPOLAR JUNCTION TRANSISTOR WITH MULTIPLE EMITTER FINGERS

SEMICONDUCTOR DEVICE WITH MULTILAYER CONTACT AND METHOD OF MANUFACT...

Circuit configuration and manufacturing processes for vertical tran...

Bipolar Junction Transistor and Method of Manufacturing the Same

Circuit configuration and manufacturing processes for vertical tran...

METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE