with one- or zero-dimensional channel

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H01L29/66469

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier

Current Industry

H01L29/66469with one- or zero-dimensional channel

Industries

Patents Grantslast 30 patents

Information Patent Grant
Semiconductor device and manufacturing method thereof
- Patent number 11,855,168
- Issue date Dec 26, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Wei-Hao Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a semiconductor device and a semiconductor...
- Patent number 11,776,852
- Issue date Oct 3, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Shao-Ming Yu
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Replacement-channel fabrication of III-V nanosheet devices
- Patent number 11,742,409
- Issue date Aug 29, 2023
- International Business Machines Corporation
- Jingyun Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit device and method
- Patent number 11,688,731
- Issue date Jun 27, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Yi-Jui Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field-effect transistor and fabrication method of field-effect tran...
- Patent number 11,664,440
- Issue date May 30, 2023
- Huawei Technologies Co., Ltd.
- Xiaolong Ma
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Vertical metal oxide semiconductor field effect transistor (MOSFET)...
- Patent number 11,621,346
- Issue date Apr 4, 2023
- C2AMPS AB
- Lars-Erik Wernersson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure and formation method thereof
- Patent number 11,575,004
- Issue date Feb 7, 2023
- Semiconductor Manufacturing International (Shanghai) Corporation
- Fei Zhou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a semiconductor device and a semiconductor...
- Patent number 11,574,918
- Issue date Feb 7, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Yun-Chi Wu
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Semiconductor structure, HEMT structure and method of forming the same
- Patent number 11,532,740
- Issue date Dec 20, 2022
- Taiwan Semiconductor Manufacturing Company Ltd.
- Yao-Chung Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor product comprising a heteroepitaxial layer grown on a...
- Patent number 11,456,370
- Issue date Sep 27, 2022
- UNM Rainforest Innovations
- Steven R. J. Brueck
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Group III-V semiconductor devices having dual workfunction gate ele...
- Patent number 11,424,335
- Issue date Aug 23, 2022
- Intel Corporation
- Sean T. Ma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Source electrode and drain electrode protection for nanowire transi...
- Patent number 11,411,096
- Issue date Aug 9, 2022
- Intel Corporation
- Karthik Jambunathan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making heteroepitaxial structures and device formed by th...
- Patent number 11,374,106
- Issue date Jun 28, 2022
- Steven R. J. Brueck
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Source/drain recess etch stop layers and bottom wide-gap cap for II...
- Patent number 11,367,789
- Issue date Jun 21, 2022
- Intel Corporation
- Cheng-Ying Huang
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Method of making heteroepitaxial structures and device formed by th...
- Patent number 11,349,011
- Issue date May 31, 2022
- Steven R. J. Brueck
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Semiconductor product comprising a heteroepitaxial layer grown on a...
- Patent number 11,342,442
- Issue date May 24, 2022
- Steven R. J. Brueck
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Method of forming a seed area and growing a heteroepitaxial layer o...
- Patent number 11,342,441
- Issue date May 24, 2022
- Steven R. J. Brueck
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Device with heteroepitaxial structure made using a growth mask
- Patent number 11,342,438
- Issue date May 24, 2022
- Steven R. J. Brueck
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Semiconductor device and manufacturing method thereof
- Patent number 11,309,396
- Issue date Apr 19, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd
- Wei-Hao Wu
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Method of making heteroepitaxial structures and device formed by th...
- Patent number 11,296,208
- Issue date Apr 5, 2022
- Steven R. J. Brueck
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Method of forming a seed area and growing a heteroepitaxial layer o...
- Patent number 11,296,207
- Issue date Apr 5, 2022
- Steven R. J. Brueck
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Device with heteroepitaxial structure made using a growth mask
- Patent number 11,296,206
- Issue date Apr 5, 2022
- Steven R. J. Brueck
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Single-crystal hexagonal boron nitride layer and method forming same
- Patent number 11,289,582
- Issue date Mar 29, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd
- Tse-An Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Quantum dot devices with single electron transistor detectors
- Patent number 11,276,756
- Issue date Mar 15, 2022
- Intel Corporation
- Hubert C. George
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 11,257,819
- Issue date Feb 22, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chia-Yuan Chang
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Semiconductor device, method of manufacturing the same and electron...
- Patent number 11,217,493
- Issue date Jan 4, 2022
- Institute of Microelectronics, Chinese Academy of Sciences
- Huilong Zhu
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Semiconductor device including stressed source/drain, method of man...
- Patent number 11,195,765
- Issue date Dec 7, 2021
- Institute of Microelectronics, Chinese Academy of Sciences
- Huilong Zhu
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Semiconductor device, method of manufacturing the same, and electro...
- Patent number 11,158,547
- Issue date Oct 26, 2021
- Institute of Microelectronics, Chinese Academy of Sciences
- Huilong Zhu
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Semiconductor device and manufacturing method thereof
- Patent number 11,133,394
- Issue date Sep 28, 2021
- Taiwan Semiconductor Manufacturing Co., Ltd
- Wei-Hao Wu
- B82 - NANO-TECHNOLOGY
Information Patent Grant
iFinFET
- Patent number 11,121,215
- Issue date Sep 14, 2021
- International Business Machines Corporation
- Juntao Li
- B82 - NANO-TECHNOLOGY

Patents Applicationslast 30 patents

Information Patent Application
METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE AND A SEMICONDUCTOR...
- Publication number 20230411215
- Publication date Dec 21, 2023
- TATWAN SEMICONDUCTOR MANUFACTURING COMANY, LTD.
- Shao-Ming YU
- B82 - NANO-TECHNOLOGY
Information Patent Application
A VERTICAL HEMT AND A METHOD TO PRODUCE A VERTICAL HEMT
- Publication number 20230352575
- Publication date Nov 2, 2023
- Epinovatech AB
- Martin Andreas Olsson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT DEVICE AND METHOD
- Publication number 20230299071
- Publication date Sep 21, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yi-Jui CHANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
REPLACEMENT-CHANNEL FABRICATION OF III-V NANOSHEET DEVICES
- Publication number 20230282728
- Publication date Sep 7, 2023
- International Business Machines Corporation
- JINGYUN Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL SEMICONDUCTOR DEVICE HAVING CONDUCTIVE LAYER, METHOD OF MA...
- Publication number 20230223456
- Publication date Jul 13, 2023
- Institute of Microelectronics, Chinese Academy of Sciences
- Huilong Zhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS FOR FORMING A SEMICONDUCTOR STRUCTURE INCLUDING A DIPOLE LAYER
- Publication number 20230215728
- Publication date Jul 6, 2023
- ASM IP HOLDING B.V.
- Paul Ma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE, HEMT STRUCTURE AND METHOD OF FORMING THE SAME
- Publication number 20230123907
- Publication date Apr 20, 2023
- Taiwan Semiconductor Manufacturing company Ltd.
- YAO-CHUNG CHANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20230106052
- Publication date Apr 6, 2023
- ENKRIS SEMICONDUCTOR, INC.
- Kai CHENG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Surface-Doped Channels for Threshold Voltage Modulation
- Publication number 20220359768
- Publication date Nov 10, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Hsiao-Chun CHANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SOURCE ELECTRODE AND DRAIN ELECTRODE PROTECTION FOR NANOWIRE TRANSI...
- Publication number 20220336634
- Publication date Oct 20, 2022
- Intel Corporation
- Karthik JAMBUNATHAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MAKING HETEROEPITAXIAL STRUCTURES AND DEVICE FORMED BY TH...
- Publication number 20220293768
- Publication date Sep 15, 2022
- UNM Rainforest Innovations
- Steven R.J. Brueck
- B82 - NANO-TECHNOLOGY
Information Patent Application
METHOD OF MAKING HETEROEPITAXIAL STRUCTURES AND DEVICE FORMED BY TH...
- Publication number 20220285526
- Publication date Sep 8, 2022
- UNM Rainforest Innovations
- Steven R.J. Brueck
- B82 - NANO-TECHNOLOGY
Information Patent Application
INTEGRATED CIRCUIT DEVICE AND METHOD
- Publication number 20220246599
- Publication date Aug 4, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yi-Jui CHANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20220238683
- Publication date Jul 28, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Wei-Hao WU
- B82 - NANO-TECHNOLOGY
Information Patent Application
QUANTUM DOT DEVICES WITH SINGLE ELECTRON TRANSISTOR DETECTORS
- Publication number 20220140086
- Publication date May 5, 2022
- Intel Corporation
- Hubert C. George
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD-EFFECT TRANSISTOR AND FABRICATION METHOD OF FIELD-EFFECT TRAN...
- Publication number 20210313451
- Publication date Oct 7, 2021
- Huawei Technologies Co., Ltd
- Xiaolong MA
- B82 - NANO-TECHNOLOGY
Information Patent Application
REPLACEMENT-CHANNEL FABRICATION OF III-V NANOSHEET DEVICES
- Publication number 20210305407
- Publication date Sep 30, 2021
- International Business Machines Corporation
- JINGYUN Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE AND A SEMICONDUCTOR...
- Publication number 20210305100
- Publication date Sep 30, 2021
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Shao-Ming YU
- B82 - NANO-TECHNOLOGY
Information Patent Application
A Vertical Metal Oxide Semiconductor Field Effect Transistor (MOSFE...
- Publication number 20210280700
- Publication date Sep 9, 2021
- C2Amps AB
- Lars-Erik Wernersson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PROCESS FOR PRODUCING ADJACENT CHIPS COMPRISING LED WIRES AND DEVIC...
- Publication number 20210234066
- Publication date Jul 29, 2021
- Aledia
- Eric POURQUIER
- B82 - NANO-TECHNOLOGY
Information Patent Application
SEMICONDUCTOR STRUCTURE, HEMT STRUCTURE AND METHOD OF FORMING THE SAME
- Publication number 20210226047
- Publication date Jul 22, 2021
- Taiwan Semiconductor Manufacturing company Ltd.
- YAO-CHUNG CHANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE AND FORMATION METHOD THEREOF
- Publication number 20210210600
- Publication date Jul 8, 2021
- Semiconductor Manufacturing International (Shanghai) Corporation
- FEI ZHOU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Single-Crystal Hexagonal Boron Nitride Layer and Method Forming Same
- Publication number 20200373409
- Publication date Nov 26, 2020
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Tse-An Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE AND A SEMICONDUCTOR...
- Publication number 20200258893
- Publication date Aug 13, 2020
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Yun-Chi WU
- B82 - NANO-TECHNOLOGY
Information Patent Application
GROUP III-V SEMICONDUCTOR DEVICES HAVING DUAL WORKFUNCTION GATE ELE...
- Publication number 20200227533
- Publication date Jul 16, 2020
- Intel Corporation
- Sean T. MA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MAKING HETEROEPITAXIAL STRUCTURES AND DEVICE FORMED BY TH...
- Publication number 20200212198
- Publication date Jul 2, 2020
- STC.UNM
- Steven R.J. Brueck
- B82 - NANO-TECHNOLOGY
Information Patent Application
METHOD OF MAKING HETEROEPITAXIAL STRUCTURES AND DEVICCE FORMED BY T...
- Publication number 20200203504
- Publication date Jun 25, 2020
- STC.UNM
- Steven R.J. Brueck
- B82 - NANO-TECHNOLOGY
Information Patent Application
METHOD OF MAKING HETEROEPITAXIAL STRUCTURES AND DEVICCE FORMED BY T...
- Publication number 20200203503
- Publication date Jun 25, 2020
- STC.UNM
- Steven R.J. Brueck
- B82 - NANO-TECHNOLOGY
Information Patent Application
METHOD OF MAKING HETEROEPITAXIAL STRUCTURES AND DEVICE FORMED BY TH...
- Publication number 20200203505
- Publication date Jun 25, 2020
- STC.UNM
- Steven R.J. Brueck
- B82 - NANO-TECHNOLOGY
Information Patent Application
METHOD OF MAKING HETEROEPITAXIAL STRUCTURES AND DEVICE FORMED BY TH...
- Publication number 20200161448
- Publication date May 21, 2020
- STC.UNM
- Steven R.J. Brueck
- B82 - NANO-TECHNOLOGY

with one- or zero-dimensional channel

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Semiconductor device and manufacturing method thereof

Method of manufacturing a semiconductor device and a semiconductor...

Replacement-channel fabrication of III-V nanosheet devices

Integrated circuit device and method

Field-effect transistor and fabrication method of field-effect tran...

Vertical metal oxide semiconductor field effect transistor (MOSFET)...

Semiconductor structure and formation method thereof

Method of manufacturing a semiconductor device and a semiconductor...

Semiconductor structure, HEMT structure and method of forming the same

Semiconductor product comprising a heteroepitaxial layer grown on a...

Group III-V semiconductor devices having dual workfunction gate ele...

Source electrode and drain electrode protection for nanowire transi...

Method of making heteroepitaxial structures and device formed by th...

Source/drain recess etch stop layers and bottom wide-gap cap for II...

Method of making heteroepitaxial structures and device formed by th...

Semiconductor product comprising a heteroepitaxial layer grown on a...

Method of forming a seed area and growing a heteroepitaxial layer o...

Device with heteroepitaxial structure made using a growth mask

Semiconductor device and manufacturing method thereof

Method of making heteroepitaxial structures and device formed by th...

Method of forming a seed area and growing a heteroepitaxial layer o...

Device with heteroepitaxial structure made using a growth mask

Single-crystal hexagonal boron nitride layer and method forming same

Quantum dot devices with single electron transistor detectors

Semiconductor device

Semiconductor device, method of manufacturing the same and electron...

Semiconductor device including stressed source/drain, method of man...

Semiconductor device, method of manufacturing the same, and electro...

Semiconductor device and manufacturing method thereof

iFinFET

Patents Applicationslast 30 patents

METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE AND A SEMICONDUCTOR...

A VERTICAL HEMT AND A METHOD TO PRODUCE A VERTICAL HEMT

INTEGRATED CIRCUIT DEVICE AND METHOD

REPLACEMENT-CHANNEL FABRICATION OF III-V NANOSHEET DEVICES

VERTICAL SEMICONDUCTOR DEVICE HAVING CONDUCTIVE LAYER, METHOD OF MA...

METHODS FOR FORMING A SEMICONDUCTOR STRUCTURE INCLUDING A DIPOLE LAYER

SEMICONDUCTOR STRUCTURE, HEMT STRUCTURE AND METHOD OF FORMING THE SAME

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

Surface-Doped Channels for Threshold Voltage Modulation

SOURCE ELECTRODE AND DRAIN ELECTRODE PROTECTION FOR NANOWIRE TRANSI...

METHOD OF MAKING HETEROEPITAXIAL STRUCTURES AND DEVICE FORMED BY TH...

METHOD OF MAKING HETEROEPITAXIAL STRUCTURES AND DEVICE FORMED BY TH...

INTEGRATED CIRCUIT DEVICE AND METHOD

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

QUANTUM DOT DEVICES WITH SINGLE ELECTRON TRANSISTOR DETECTORS

FIELD-EFFECT TRANSISTOR AND FABRICATION METHOD OF FIELD-EFFECT TRAN...

REPLACEMENT-CHANNEL FABRICATION OF III-V NANOSHEET DEVICES

METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE AND A SEMICONDUCTOR...

A Vertical Metal Oxide Semiconductor Field Effect Transistor (MOSFE...

PROCESS FOR PRODUCING ADJACENT CHIPS COMPRISING LED WIRES AND DEVIC...

SEMICONDUCTOR STRUCTURE, HEMT STRUCTURE AND METHOD OF FORMING THE SAME

SEMICONDUCTOR STRUCTURE AND FORMATION METHOD THEREOF

Single-Crystal Hexagonal Boron Nitride Layer and Method Forming Same

METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE AND A SEMICONDUCTOR...

GROUP III-V SEMICONDUCTOR DEVICES HAVING DUAL WORKFUNCTION GATE ELE...

METHOD OF MAKING HETEROEPITAXIAL STRUCTURES AND DEVICE FORMED BY TH...

METHOD OF MAKING HETEROEPITAXIAL STRUCTURES AND DEVICCE FORMED BY T...

METHOD OF MAKING HETEROEPITAXIAL STRUCTURES AND DEVICCE FORMED BY T...

METHOD OF MAKING HETEROEPITAXIAL STRUCTURES AND DEVICE FORMED BY TH...

METHOD OF MAKING HETEROEPITAXIAL STRUCTURES AND DEVICE FORMED BY TH...