with one dimensional charge carrier gas channel

Industry

CPC
H01L29/775

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Parent Industries

HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier

Current Industry

H01L29/775with one dimensional charge carrier gas channel

Industries

Patents Grantslast 30 patents

Information Patent Grant
Gate all-around semiconductor device
- Patent number 12,142,635
- Issue date Nov 12, 2024
- Parabellum Strategic Opportunities Fund LLC
- Ka-Hing Fung
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Method for making nanostructure transistors with flush source/drain...
- Patent number 12,142,669
- Issue date Nov 12, 2024
- ATOMERA INCORPORATED
- Donghun Kang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon and silicon germanium nanowire structures
- Patent number 12,142,634
- Issue date Nov 12, 2024
- Sony Group Corporation
- Kelin J. Kuhn
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Semiconductor device
- Patent number 12,142,650
- Issue date Nov 12, 2024
- Samsung Electronics Co., Ltd.
- Sang Hoon Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device manufacturing method and plasma processing method
- Patent number 12,142,489
- Issue date Nov 12, 2024
- HITACHI HIGH-TECH CORPORATION
- Mamoru Yakushiji
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device including a gate-all-around field effect trans...
- Patent number 12,142,529
- Issue date Nov 12, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Shao-Ming Yu
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Selective epitaxy process for the formation of CFET local interconn...
- Patent number 12,131,954
- Issue date Oct 29, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Che Chi Shih
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bonding and isolation techniques for stacked transistor structures
- Patent number 12,132,079
- Issue date Oct 29, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Kuan-Kan Hu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device structure and methods of forming the same
- Patent number 12,132,000
- Issue date Oct 29, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Shao-Kuan Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 12,132,090
- Issue date Oct 29, 2024
- Semiconductor Energy Laboratory Co., Ltd.
- Akio Suzuki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transition metal dichalcogenide (TMD) layer stack for transistor ap...
- Patent number 12,125,895
- Issue date Oct 22, 2024
- Intel Corporation
- Chelsey Dorow
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor storage device
- Patent number 12,127,388
- Issue date Oct 22, 2024
- SOCIONEXT INC.
- Shinichi Moriwaki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor integrated circuit device
- Patent number 12,119,339
- Issue date Oct 15, 2024
- SOCIONEXT INC.
- Yoko Shiraki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having fin-type field effect transistor and me...
- Patent number 12,119,351
- Issue date Oct 15, 2024
- Samsung Electronics Co., Ltd.
- Dong-Il Bae
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fabrication of gate-all-around integrated circuit structures having...
- Patent number 12,113,068
- Issue date Oct 8, 2024
- Intel Corporation
- Dan S. Lavric
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-organized quantum dot semiconductor structure
- Patent number 12,107,155
- Issue date Oct 1, 2024
- National Chiao Tung University
- Pei-Wen Li
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Threshold adjustment for quantum dot array devices with metal sourc...
- Patent number 12,107,144
- Issue date Oct 1, 2024
- STMicroelectronics, Inc.
- John H. Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Contact structure for stacked multi-gate device
- Patent number 12,107,169
- Issue date Oct 1, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Zhi-Chang Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit devices including discharging path and methods o...
- Patent number 12,087,669
- Issue date Sep 10, 2024
- Samsung Electronics Co., Ltd.
- Jaehong Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Complementary field effect transistor devices
- Patent number 12,087,770
- Issue date Sep 10, 2024
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vector friendly instruction format and execution thereof
- Patent number 12,086,594
- Issue date Sep 10, 2024
- Intel Corporation
- Robert C. Valentine
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Semiconductor integrated circuit device
- Patent number 12,080,804
- Issue date Sep 3, 2024
- SOCIONEXT INC.
- Hiroyuki Shimbo
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Semiconductor structure with nanofog oxide adhered to inert or weak...
- Patent number 12,080,549
- Issue date Sep 3, 2024
- The Regents of the University of California
- Iljo Kwak
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Semiconductor chip
- Patent number 12,080,805
- Issue date Sep 3, 2024
- SOCIONEXT INC.
- Hiroyuki Shimbo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure and method for forming the same
- Patent number 12,074,204
- Issue date Aug 27, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Jung-Hung Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistors with multiple threshold voltages
- Patent number 12,063,768
- Issue date Aug 13, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Shih-Hao Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Back end of line nanowire power switch transistors
- Patent number 12,062,714
- Issue date Aug 13, 2024
- Taiwan Semiconductor Manufacturing, Co., Ltd.
- Li-Yang Chuang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory cell and CMOS inverter circuit
- Patent number 12,063,765
- Issue date Aug 13, 2024
- SONY SEMICONDUCTOR SOLUTIONS CORPORATION
- Manabu Tomita
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a semiconductor device and a semiconductor...
- Patent number 12,062,580
- Issue date Aug 13, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Shahaji B. More
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fabrication of gate-all-around integrated circuit structures having...
- Patent number 12,051,698
- Issue date Jul 30, 2024
- Intel Corporation
- Daniel G. Ouellette
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SEMICONDUCTOR DEVICE INCLUDING AN ACTIVE PATTERN
- Publication number 20240387717
- Publication date Nov 21, 2024
- Samsung Electronics Co., Ltd.
- HYOHOON BYEON
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20240387327
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chih-Yang CHEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PACKAGE STRUCTURE WITH OPTICAL ELEMENTS AND METHOD FOR MANUFACTURIN...
- Publication number 20240387329
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chih-Hsin LU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NANOWIRE TRANSISTOR FABRICATION WITH HARDMASK LAYERS
- Publication number 20240387634
- Publication date Nov 21, 2024
- SONY GROUP CORPORATION
- Seung Hoon Sung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Contact Structures for Gate-All-Around Devices and Methods of Formi...
- Publication number 20240387659
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Co., LTD
- Jhon Jhy Liaw
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20240387669
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yi-Syuan SIAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SCALED 2T DRAM
- Publication number 20240386943
- Publication date Nov 21, 2024
- International Business Machines Corporation
- Min Gyu Sung
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR STRUCTURE WITH DIELECTRIC WALL STRUCTURE AND METHOD F...
- Publication number 20240387632
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yu-Lung TUNG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
COMPLEMENTARY FIELD EFFECT TRANSISTOR WITH OBLIQUE CONDUCTIVE THROU...
- Publication number 20240387651
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Hsin-Chih WANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NANOSHEET STRUCTURES WITH TUNABLE CHANNELS AND INNER SIDEWALL SPACERS
- Publication number 20240387668
- Publication date Nov 21, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Hong Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD
- Publication number 20240387747
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chunchieh Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRUCTURE AND FORMATION METHOD OF SEMICONDUCTOR DEVICE WITH SEMICON...
- Publication number 20240387716
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chih-Yang CHEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT DEVICE
- Publication number 20240387624
- Publication date Nov 21, 2024
- Samsung Electronics Co., Ltd.
- Duckseoung KANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE STRUCTURE AND METHOD FOR FORMING THE SAME
- Publication number 20240379875
- Publication date Nov 14, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Jung-Hung CHANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DRAIN SIDE RECESS FOR BACK-SIDE POWER RAIL DEVICE
- Publication number 20240379783
- Publication date Nov 14, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Huan-Chieh Su
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL (3D) DUAL COMPLEMENTARY CIRCUIT STRUCTURES AND RE...
- Publication number 20240379679
- Publication date Nov 14, 2024
- QUALCOMM Incorporated
- Xia Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR FORMING THE SAME
- Publication number 20240379759
- Publication date Nov 14, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Wei-Yip LOH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES
- Publication number 20240379795
- Publication date Nov 14, 2024
- Samsung Electronics Co., Ltd.
- Wooseok PARK
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
AMBIPOLAR SEMICONDUCTOR-BASED TRANSISTOR AND METHOD
- Publication number 20240379833
- Publication date Nov 14, 2024
- King Abdullah University of Science and Technology
- Xiaohang LI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STACKED FET VERTICAL DIODE
- Publication number 20240379658
- Publication date Nov 14, 2024
- International Business Machines Corporation
- Terence Hook
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LEAKAGE REDUCTION BY HALO-IMP TECHNOLOGY IN MESA REGION OF NANO SHE...
- Publication number 20240379663
- Publication date Nov 14, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yu-Chang LIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES AND METHODS FOR MANUFACTURING
- Publication number 20240379754
- Publication date Nov 14, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Tzu-Ging Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
3D-STACKED SEMICONDUCTOR DEVICE INCLUDING SOURCE/DRAIN REGIONS VERT...
- Publication number 20240379780
- Publication date Nov 14, 2024
- Samsung Electronics Co., Ltd.
- Keumseok PARK
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE-ALL-AROUND TRANSISTOR AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20240379764
- Publication date Nov 14, 2024
- Institute of Microelectronics, Chinese Academy of Sciences
- Yongliang Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PLACEHOLDER PROFILE FORMATION FOR BACKSIDE CONTACT
- Publication number 20240379769
- Publication date Nov 14, 2024
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES
- Publication number 20240379550
- Publication date Nov 14, 2024
- Samsung Electronics Co., Ltd.
- Heeseop Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20240379760
- Publication date Nov 14, 2024
- Samsung Electronics Co., Ltd.
- Soon Yeol PARK
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
3DS FET AND METHOD OF MANUFACTURING THE SAME
- Publication number 20240379794
- Publication date Nov 14, 2024
- Institute of Microelectronics, Chinese Academy of Sciences
- Huaxiang YIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STACKED DEVICES CONTAINING AT LEAST ONE LATERAL DIODE
- Publication number 20240379657
- Publication date Nov 14, 2024
- International Business Machines Corporation
- Terence Hook
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Bonding and Isolation Techniques for Stacked Transistor Structures
- Publication number 20240379748
- Publication date Nov 14, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Kuan-Kan Hu
- H01 - BASIC ELECTRIC ELEMENTS

with one dimensional charge carrier gas channel

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Gate all-around semiconductor device

Method for making nanostructure transistors with flush source/drain...

Silicon and silicon germanium nanowire structures

Semiconductor device

Semiconductor device manufacturing method and plasma processing method

Semiconductor device including a gate-all-around field effect trans...

Selective epitaxy process for the formation of CFET local interconn...

Bonding and isolation techniques for stacked transistor structures

Semiconductor device structure and methods of forming the same

Semiconductor device

Transition metal dichalcogenide (TMD) layer stack for transistor ap...

Semiconductor storage device

Semiconductor integrated circuit device

Semiconductor device having fin-type field effect transistor and me...

Fabrication of gate-all-around integrated circuit structures having...

Self-organized quantum dot semiconductor structure

Threshold adjustment for quantum dot array devices with metal sourc...

Contact structure for stacked multi-gate device

Integrated circuit devices including discharging path and methods o...

Complementary field effect transistor devices

Vector friendly instruction format and execution thereof

Semiconductor integrated circuit device

Semiconductor structure with nanofog oxide adhered to inert or weak...

Semiconductor chip

Semiconductor structure and method for forming the same

Transistors with multiple threshold voltages

Back end of line nanowire power switch transistors

Memory cell and CMOS inverter circuit

Method of manufacturing a semiconductor device and a semiconductor...

Fabrication of gate-all-around integrated circuit structures having...

Patents Applicationslast 30 patents

SEMICONDUCTOR DEVICE INCLUDING AN ACTIVE PATTERN

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

PACKAGE STRUCTURE WITH OPTICAL ELEMENTS AND METHOD FOR MANUFACTURIN...

NANOWIRE TRANSISTOR FABRICATION WITH HARDMASK LAYERS

Contact Structures for Gate-All-Around Devices and Methods of Formi...

INTEGRATED CIRCUIT DEVICE AND MANUFACTURING METHOD THEREOF

SCALED 2T DRAM

SEMICONDUCTOR STRUCTURE WITH DIELECTRIC WALL STRUCTURE AND METHOD F...

COMPLEMENTARY FIELD EFFECT TRANSISTOR WITH OBLIQUE CONDUCTIVE THROU...

NANOSHEET STRUCTURES WITH TUNABLE CHANNELS AND INNER SIDEWALL SPACERS

SEMICONDUCTOR DEVICE AND METHOD

STRUCTURE AND FORMATION METHOD OF SEMICONDUCTOR DEVICE WITH SEMICON...

INTEGRATED CIRCUIT DEVICE

SEMICONDUCTOR DEVICE STRUCTURE AND METHOD FOR FORMING THE SAME

DRAIN SIDE RECESS FOR BACK-SIDE POWER RAIL DEVICE

THREE-DIMENSIONAL (3D) DUAL COMPLEMENTARY CIRCUIT STRUCTURES AND RE...

SEMICONDUCTOR DEVICE AND METHOD FOR FORMING THE SAME

SEMICONDUCTOR DEVICES

AMBIPOLAR SEMICONDUCTOR-BASED TRANSISTOR AND METHOD

STACKED FET VERTICAL DIODE

LEAKAGE REDUCTION BY HALO-IMP TECHNOLOGY IN MESA REGION OF NANO SHE...

SEMICONDUCTOR DEVICES AND METHODS FOR MANUFACTURING

3D-STACKED SEMICONDUCTOR DEVICE INCLUDING SOURCE/DRAIN REGIONS VERT...

GATE-ALL-AROUND TRANSISTOR AND METHOD FOR MANUFACTURING THE SAME

PLACEHOLDER PROFILE FORMATION FOR BACKSIDE CONTACT

SEMICONDUCTOR DEVICES

SEMICONDUCTOR DEVICE

3DS FET AND METHOD OF MANUFACTURING THE SAME

STACKED DEVICES CONTAINING AT LEAST ONE LATERAL DIODE

Bonding and Isolation Techniques for Stacked Transistor Structures