with one dimensional charge carrier gas channel

Industry

CPC
H01L29/775

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Parent Industries

HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier

Current Industry

H01L29/775with one dimensional charge carrier gas channel

Industries

Patents Grantslast 30 patents

Information Patent Grant
Semiconductor devices and method of manufacturing the same
- Patent number 12,199,099
- Issue date Jan 14, 2025
- Samsung Electronics Co., Ltd.
- Jung-Gil Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structure and formation method of semiconductor device structure wi...
- Patent number 12,199,169
- Issue date Jan 14, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chao-Ching Cheng
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Reducing off-state leakage in semiconductor devices
- Patent number 12,191,349
- Issue date Jan 7, 2025
- Intel Corporation
- Dipanjan Basu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with silicide gate fill structure
- Patent number 12,183,787
- Issue date Dec 31, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chung-Liang Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices including an isolation insulating pattern on...
- Patent number 12,183,732
- Issue date Dec 31, 2024
- Samsung Electronics Co., Ltd.
- Inwon Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Reducing parasitic capacitance for gate-all-around device by formin...
- Patent number 12,183,808
- Issue date Dec 31, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Kuo-Cheng Ching
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with silicide gate fill structure
- Patent number 12,176,392
- Issue date Dec 24, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chung-Liang Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor storage device
- Patent number 12,178,031
- Issue date Dec 24, 2024
- SOCIONEXT INC.
- Yoshinobu Yamagami
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Wrap-around contact structures for semiconductor nanowires and nano...
- Patent number 12,176,429
- Issue date Dec 24, 2024
- Intel Corporation
- Rishabh Mehandru
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Isolation structures and methods of forming the same in field-effec...
- Patent number 12,170,334
- Issue date Dec 17, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Shi Ning Ju
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Nanosheet channel-to-source and drain isolation
- Patent number 12,166,110
- Issue date Dec 10, 2024
- Adeia Semiconductor Solutions LLC
- Marc A. Bergendahl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistors comprising a vertical stack of elongated semiconductor...
- Patent number 12,165,869
- Issue date Dec 10, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Tung Ying Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Contact structures for gate-all-around devices and methods of formi...
- Patent number 12,159,913
- Issue date Dec 3, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Jhon Jhy Liaw
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Non-planar gate all-around device and method of fabrication thereof
- Patent number RE50222
- Issue date Nov 26, 2024
- Sony Group Corporation
- Willy Rachmady
Information Patent Grant
Forming nanosheet transistor using sacrificial spacer and inner spa...
- Patent number 12,154,971
- Issue date Nov 26, 2024
- Adeia Semiconductor Solutions LLC
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for making nanostructure transistors with flush source/drain...
- Patent number 12,142,669
- Issue date Nov 12, 2024
- ATOMERA INCORPORATED
- Donghun Kang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate all-around semiconductor device
- Patent number 12,142,635
- Issue date Nov 12, 2024
- Parabellum Strategic Opportunities Fund LLC
- Ka-Hing Fung
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Silicon and silicon germanium nanowire structures
- Patent number 12,142,634
- Issue date Nov 12, 2024
- Sony Group Corporation
- Kelin J. Kuhn
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Semiconductor device
- Patent number 12,142,650
- Issue date Nov 12, 2024
- Samsung Electronics Co., Ltd.
- Sang Hoon Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device manufacturing method and plasma processing method
- Patent number 12,142,489
- Issue date Nov 12, 2024
- HITACHI HIGH-TECH CORPORATION
- Mamoru Yakushiji
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device including a gate-all-around field effect trans...
- Patent number 12,142,529
- Issue date Nov 12, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Shao-Ming Yu
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Selective epitaxy process for the formation of CFET local interconn...
- Patent number 12,131,954
- Issue date Oct 29, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Che Chi Shih
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bonding and isolation techniques for stacked transistor structures
- Patent number 12,132,079
- Issue date Oct 29, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Kuan-Kan Hu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device structure and methods of forming the same
- Patent number 12,132,000
- Issue date Oct 29, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Shao-Kuan Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 12,132,090
- Issue date Oct 29, 2024
- Semiconductor Energy Laboratory Co., Ltd.
- Akio Suzuki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transition metal dichalcogenide (TMD) layer stack for transistor ap...
- Patent number 12,125,895
- Issue date Oct 22, 2024
- Intel Corporation
- Chelsey Dorow
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor storage device
- Patent number 12,127,388
- Issue date Oct 22, 2024
- SOCIONEXT INC.
- Shinichi Moriwaki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor integrated circuit device
- Patent number 12,119,339
- Issue date Oct 15, 2024
- SOCIONEXT INC.
- Yoko Shiraki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having fin-type field effect transistor and me...
- Patent number 12,119,351
- Issue date Oct 15, 2024
- Samsung Electronics Co., Ltd.
- Dong-Il Bae
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fabrication of gate-all-around integrated circuit structures having...
- Patent number 12,113,068
- Issue date Oct 8, 2024
- Intel Corporation
- Dan S. Lavric
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
STRUCTURE AND FORMATION METHOD OF SEMICONDUCTOR DEVICE WITH SPACERS
- Publication number 20250022877
- Publication date Jan 16, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Ta-Chun LIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
EPITAXIAL STRUCTURES FOR SEMICONDUCTOR DEVICES AND MANUFACTURING ME...
- Publication number 20250022957
- Publication date Jan 16, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Che-Yu Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ISOLATION BETWEEN DEVICE AREAS
- Publication number 20250022746
- Publication date Jan 16, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Tzu-Ging Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT DEVICES INCLUDING STACKED FIELD-EFFECT TRANSISTO...
- Publication number 20250022773
- Publication date Jan 16, 2025
- Samsung Electronics Co., Ltd.
- JINTAE KIM
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Volume-Less Dipole Incorporation into CFET Having Common Gate
- Publication number 20250022879
- Publication date Jan 16, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Yen-Jui Chiu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Methods Of Forming Contact Structure In Semiconductor Devices
- Publication number 20250022925
- Publication date Jan 16, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Fan Hsuan CHIEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES WITH IMPROVED GATE CONTROL
- Publication number 20250022940
- Publication date Jan 16, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Che-Chun LU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES
- Publication number 20250022944
- Publication date Jan 16, 2025
- Samsung Electronics Co., LTD
- Sungil Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE HAVING NANOSTRUCTURE TRANSISTOR AND METHODS OF...
- Publication number 20250022945
- Publication date Jan 16, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chung-En TSAI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE REDUCTION OR REMOVAL BETWEEN DUAL MIDDLE DIELECTRIC ISOLATION
- Publication number 20250022880
- Publication date Jan 16, 2025
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRENCH ISOLATION FOR BACKSIDE CONTACT FORMATION
- Publication number 20250022913
- Publication date Jan 16, 2025
- International Business Machines Corporation
- Juntao Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRESS LINERS IN SEMICONDUCTOR DEVICES
- Publication number 20250022956
- Publication date Jan 16, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Yi-Cheng LI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH IMPROVED SOURCE/DRAIN PROFILE AND METHODS...
- Publication number 20250022914
- Publication date Jan 16, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Kuei-Yu KAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20250022930
- Publication date Jan 16, 2025
- Samsung Electronics Co., Ltd.
- Sunjung Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE STRUCTURE AND METHOD FOR FORMING THE SAME
- Publication number 20250022946
- Publication date Jan 16, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Ta-Chun LIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MANUFACTURING NANOWIRE, METHOD FOR MANUFACTURING THIN FI...
- Publication number 20250014898
- Publication date Jan 9, 2025
- BOE TECHNOLOGY GROUP CO., LTD.
- Hao WU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME
- Publication number 20250015157
- Publication date Jan 9, 2025
- Samsung Electronics Co., Ltd.
- Beomjin Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20250015084
- Publication date Jan 9, 2025
- Institute of Microelectronics, Chinese Academy of Sciences
- Yongliang Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME
- Publication number 20250015160
- Publication date Jan 9, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Jhon-Jhy Liaw
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTI-GATE DEVICE AND RELATED METHODS
- Publication number 20250015167
- Publication date Jan 9, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Wen-Yi LIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE, SEMICONDUCTOR CHIP AND MANUFACTURING METHOD T...
- Publication number 20250015079
- Publication date Jan 9, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Ta-Chun LIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES WITH BONDING LAYERS
- Publication number 20250015131
- Publication date Jan 9, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Wan Chen HSIEH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES
- Publication number 20250014995
- Publication date Jan 9, 2025
- Samsung Electronics Co., Ltd.
- Jinwoo LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE
- Publication number 20250015130
- Publication date Jan 9, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yu-Lung TUNG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE WITH AIR SPACER AND METHOD FOR FORMING THE...
- Publication number 20250015132
- Publication date Jan 9, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Shi-Sheng Hu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY DEVICE STRUCTURE AND METHOD
- Publication number 20250016983
- Publication date Jan 9, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Shih-Yu Liao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STACKED NANOSHEET FETS WITH GATE DIELECTRIC FILL
- Publication number 20250006736
- Publication date Jan 2, 2025
- International Business Machines Corporation
- Biswanath Senapati
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STACKED CMOS TRANSISTOR STRUCTURES WITH COMPLEMENTARY CHANNEL MATER...
- Publication number 20250006737
- Publication date Jan 2, 2025
- Intel Corporation
- Aryan Navabi-Shirazi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT STRUCTURES HAVING REDUCED END CAP
- Publication number 20250006787
- Publication date Jan 2, 2025
- Intel Corporation
- Leonard P. GULER
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STACKED MULTI-GATE DEVICE WITH REDUCED CONTACT RESISTANCE AND METHO...
- Publication number 20250006561
- Publication date Jan 2, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Kuan-Kan HU
- H01 - BASIC ELECTRIC ELEMENTS

with one dimensional charge carrier gas channel

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Semiconductor devices and method of manufacturing the same

Structure and formation method of semiconductor device structure wi...

Reducing off-state leakage in semiconductor devices

Semiconductor device with silicide gate fill structure

Semiconductor devices including an isolation insulating pattern on...

Reducing parasitic capacitance for gate-all-around device by formin...

Semiconductor device with silicide gate fill structure

Semiconductor storage device

Wrap-around contact structures for semiconductor nanowires and nano...

Isolation structures and methods of forming the same in field-effec...

Nanosheet channel-to-source and drain isolation

Transistors comprising a vertical stack of elongated semiconductor...

Contact structures for gate-all-around devices and methods of formi...

Non-planar gate all-around device and method of fabrication thereof

Forming nanosheet transistor using sacrificial spacer and inner spa...

Method for making nanostructure transistors with flush source/drain...

Gate all-around semiconductor device

Silicon and silicon germanium nanowire structures

Semiconductor device

Semiconductor device manufacturing method and plasma processing method

Semiconductor device including a gate-all-around field effect trans...

Selective epitaxy process for the formation of CFET local interconn...

Bonding and isolation techniques for stacked transistor structures

Semiconductor device structure and methods of forming the same

Semiconductor device

Transition metal dichalcogenide (TMD) layer stack for transistor ap...

Semiconductor storage device

Semiconductor integrated circuit device

Semiconductor device having fin-type field effect transistor and me...

Fabrication of gate-all-around integrated circuit structures having...

Patents Applicationslast 30 patents

STRUCTURE AND FORMATION METHOD OF SEMICONDUCTOR DEVICE WITH SPACERS

EPITAXIAL STRUCTURES FOR SEMICONDUCTOR DEVICES AND MANUFACTURING ME...

ISOLATION BETWEEN DEVICE AREAS

INTEGRATED CIRCUIT DEVICES INCLUDING STACKED FIELD-EFFECT TRANSISTO...

Volume-Less Dipole Incorporation into CFET Having Common Gate

Methods Of Forming Contact Structure In Semiconductor Devices

SEMICONDUCTOR DEVICES WITH IMPROVED GATE CONTROL

SEMICONDUCTOR DEVICES

SEMICONDUCTOR DEVICE HAVING NANOSTRUCTURE TRANSISTOR AND METHODS OF...

GATE REDUCTION OR REMOVAL BETWEEN DUAL MIDDLE DIELECTRIC ISOLATION

TRENCH ISOLATION FOR BACKSIDE CONTACT FORMATION

STRESS LINERS IN SEMICONDUCTOR DEVICES

SEMICONDUCTOR DEVICE WITH IMPROVED SOURCE/DRAIN PROFILE AND METHODS...

SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE STRUCTURE AND METHOD FOR FORMING THE SAME

METHOD FOR MANUFACTURING NANOWIRE, METHOD FOR MANUFACTURING THIN FI...

SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME

MULTI-GATE DEVICE AND RELATED METHODS

SEMICONDUCTOR DEVICE, SEMICONDUCTOR CHIP AND MANUFACTURING METHOD T...

SEMICONDUCTOR DEVICES WITH BONDING LAYERS

SEMICONDUCTOR DEVICES

SEMICONDUCTOR STRUCTURE

SEMICONDUCTOR STRUCTURE WITH AIR SPACER AND METHOD FOR FORMING THE...

MEMORY DEVICE STRUCTURE AND METHOD

STACKED NANOSHEET FETS WITH GATE DIELECTRIC FILL

STACKED CMOS TRANSISTOR STRUCTURES WITH COMPLEMENTARY CHANNEL MATER...

INTEGRATED CIRCUIT STRUCTURES HAVING REDUCED END CAP

STACKED MULTI-GATE DEVICE WITH REDUCED CONTACT RESISTANCE AND METHO...