with quantum effects only in vertical direction

Industry

CPC
H01L29/152

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier

Current Industry

H01L29/152with quantum effects only in vertical direction

Industries

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Patents Grantslast 30 patents

Information Patent Grant
Semiconductor device including superlattice with O18 enriched monol...
- Patent number 12,199,148
- Issue date Jan 14, 2025
- ATOMERA INCORPORATED
- Marek Hytha
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device including a superlattice and an asymmetric cha...
- Patent number 12,199,180
- Issue date Jan 14, 2025
- ATOMERA INCORPORATED
- Hideki Takeuchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structures with multiple threshold voltage offerings...
- Patent number 12,142,640
- Issue date Nov 12, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Shan-Mei Liao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for making gate-all-around (GAA) device including a superlat...
- Patent number 12,142,641
- Issue date Nov 12, 2024
- ATOMERA INCORPORATED
- Keith Doran Weeks
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Enhanced cascade field effect transistor
- Patent number 12,132,102
- Issue date Oct 29, 2024
- Purdue Research Foundation
- Tillmann C. Kubis
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for making semiconductor device including superlattice with...
- Patent number 12,119,380
- Issue date Oct 15, 2024
- ATOMERA INCORPORATED
- Keith Doran Weeks
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Steep sloped vertical tunnel field-effect transistor
- Patent number 12,107,126
- Issue date Oct 1, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Peter Ramvall
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate-all-around (GAA) device including a superlattice
- Patent number 11,978,771
- Issue date May 7, 2024
- ATOMERA INCORPORATED
- Keith Doran Weeks
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for making bipolar junction transistors including emitter-b...
- Patent number 11,935,940
- Issue date Mar 19, 2024
- ATOMERA INCORPORATED
- Richard Burton
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bipolar junction transistors including emitter-base and base-collec...
- Patent number 11,923,431
- Issue date Mar 5, 2024
- ATOMERA INCORPORATED
- Richard Burton
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device including a superlattice and an asymmetric cha...
- Patent number 11,869,968
- Issue date Jan 9, 2024
- ATOMERA INCORPORATED
- Hideki Takeuchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for making semiconductor device including superlattice with...
- Patent number 11,848,356
- Issue date Dec 19, 2023
- ATOMERA INCORPORATED
- Keith Doran Weeks
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device including superlattice with oxygen and carbon...
- Patent number 11,837,634
- Issue date Dec 5, 2023
- ATOMERA INCORPORATED
- Keith Doran Weeks
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device including capacitor
- Patent number 11,764,283
- Issue date Sep 19, 2023
- Samsung Electronics Co., Ltd.
- Sunmin Moon
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device including superlattice with O18 enriched monol...
- Patent number 11,728,385
- Issue date Aug 15, 2023
- ATOMERA INCORPORATED
- Marek Hytha
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for making semiconductor device including superlattice with...
- Patent number 11,682,712
- Issue date Jun 20, 2023
- ATOMERA INCORPORATED
- Marek Hytha
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical semiconductor device with enhanced contact structure and a...
- Patent number 11,664,427
- Issue date May 30, 2023
- ATOMERA INCORPORATED
- Robert John Stephenson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for making an inverted T channel field effect transistor (IT...
- Patent number 11,664,459
- Issue date May 30, 2023
- ATOMERA INCORPORATED
- Robert John Stephenson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Superlattice films for photonic and electronic devices
- Patent number 11,658,213
- Issue date May 23, 2023
- Northwestern University
- Robert P. H. Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device including capacitor
- Patent number 11,621,339
- Issue date Apr 4, 2023
- Samsung Electronics Co., Ltd.
- Sunmin Moon
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Quantum dot devices with selectors
- Patent number 11,557,630
- Issue date Jan 17, 2023
- Intel Corporation
- Ravi Pillarisetty
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Semiconductor device including a superlattice and providing reduced...
- Patent number 11,469,302
- Issue date Oct 11, 2022
- ATOMERA INCORPORATED
- Hideki Takeuchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for making bipolar junction transistors including emitter-b...
- Patent number 11,437,486
- Issue date Sep 6, 2022
- ATOMERA INCORPORATED
- Richard Burton
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bipolar junction transistors including emitter-base and base-collec...
- Patent number 11,437,487
- Issue date Sep 6, 2022
- ATOMERA INCORPORATED
- Richard Burton
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical semiconductor device with enhanced contact structure and a...
- Patent number 11,387,325
- Issue date Jul 12, 2022
- ATOMERA INCORPORATED
- Robert John Stephenson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Enhanced cascade field effect transistor
- Patent number 11,362,200
- Issue date Jun 14, 2022
- Purdue Research Foundation
- Tillmann C. Kubis
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for making semiconductor device including vertically integra...
- Patent number 11,355,667
- Issue date Jun 7, 2022
- ATOMERA INCORPORATED
- Robert John Stephenson
- G02 - OPTICS
Information Patent Grant
Steep sloped vertical tunnel field-effect transistor
- Patent number 11,355,590
- Issue date Jun 7, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd
- Peter Ramvall
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device including a superlattice and an asymmetric cha...
- Patent number 11,329,154
- Issue date May 10, 2022
- ATOMERA INCORPORATED
- Hideki Takeuchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device, method of manufacturing the same and electron...
- Patent number 11,217,493
- Issue date Jan 4, 2022
- Institute of Microelectronics, Chinese Academy of Sciences
- Huilong Zhu
- B82 - NANO-TECHNOLOGY

Patents Applicationslast 30 patents

Information Patent Application
METHOD FOR MAKING GATE-ALL-AROUND (GAA) DEVICE INCLUDING A SUPERLAT...
- Publication number 20250048701
- Publication date Feb 6, 2025
- ATOMERA INCORPORATED
- KEITH DORAN WEEKS
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY DEVICE INCLUDING A SUPERLATTICE GETTERING LAYER
- Publication number 20250015137
- Publication date Jan 9, 2025
- ATOMERA INCORPORATED
- HIDEKI TAKEUCHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MAKING MEMORY DEVICE INCLUDING A SUPERLATTICE GETTERING...
- Publication number 20250014896
- Publication date Jan 9, 2025
- ATOMERA INCORPORATED
- HIDEKI TAKEUCHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MAKING SEMICONDUCTOR DEVICE INCLUDING SUPERLATTICE WITH...
- Publication number 20250006794
- Publication date Jan 2, 2025
- ATOMERA INCORPORATED
- KEITH DORAN WEEKS
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURES WITH MULTIPLE THRESHOLD VOLTAGE OFFERINGS...
- Publication number 20240387639
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Shan-Mei Liao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Quantum Dipole Battery
- Publication number 20240250156
- Publication date Jul 25, 2024
- Pronoia, Inc.
- Woo Yong Lie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS FOR MAKING BIPOLAR JUNCTION TRANSISTORS INCLUDING EMITTER-B...
- Publication number 20240250146
- Publication date Jul 25, 2024
- ATOMERA INCORPORATED
- RICHARD BURTON
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE-ALL-AROUND (GAA) DEVICE INCLUDING A SUPERLATTICE
- Publication number 20240194740
- Publication date Jun 13, 2024
- ATOMERA INCORPORATED
- KEITH DORAN WEEKS
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BIPOLAR JUNCTION TRANSISTORS INCLUDING EMITTER-BASE AND BASE-COLLEC...
- Publication number 20240097003
- Publication date Mar 21, 2024
- ATOMERA INCORPORATED
- RICHARD BURTON
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE INCLUDING A SUPERLATTICE AND AN ASYMMETRIC CHA...
- Publication number 20240097026
- Publication date Mar 21, 2024
- ATOMERA INCORPORATED
- HIDEKI TAKEUCHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MAKING SEMICONDUCTOR DEVICE INCLUDING SUPERLATTICE WITH...
- Publication number 20240063268
- Publication date Feb 22, 2024
- ATOMERA INCORPORATED
- KEITH DORAN WEEKS
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE INCLUDING SUPERLATTICE WITH O18 ENRICHED MONOL...
- Publication number 20230361178
- Publication date Nov 9, 2023
- ATOMERA INCORPORATED
- Marek Hytha
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH HIGH-ELECTRON MOBILITY TRANSISTOR
- Publication number 20230327008
- Publication date Oct 12, 2023
- International Business Machines Corporation
- Eunjung Cha
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE-ALL-AROUND (GAA) DEVICE INCLUDING A SUPERLATTICE
- Publication number 20230121774
- Publication date Apr 20, 2023
- ATOMERA INCORPORATED
- KEITH DORAN WEEKS
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MAKING GATE-ALL-AROUND (GAA) DEVICE INCLUDING A SUPERLAT...
- Publication number 20230122723
- Publication date Apr 20, 2023
- ATOMERA INCORPORATED
- KEITH DORAN WEEKS
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE INCLUDING SUPERLATTICE WITH O18 ENRICHED MONOL...
- Publication number 20220384579
- Publication date Dec 1, 2022
- ATOMERA INCORPORATED
- Marek Hytha
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MAKING SEMICONDUCTOR DEVICE INCLUDING SUPERLATTICE WITH...
- Publication number 20220384612
- Publication date Dec 1, 2022
- ATOMERA INCORPORATED
- Marek Hytha
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BIPOLAR JUNCTION TRANSISTORS INCLUDING EMITTER-BASE AND BASE-COLLEC...
- Publication number 20220367676
- Publication date Nov 17, 2022
- ATOMERA INCORPORATED
- RICHARD BURTON
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS FOR MAKING BIPOLAR JUNCTION TRANSISTORS INCLUDING EMITTER-B...
- Publication number 20220367675
- Publication date Nov 17, 2022
- ATOMERA INCORPORATED
- RICHARD BURTON
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ENHANCED CASCADE FIELD EFFECT TRANSISTOR
- Publication number 20220352357
- Publication date Nov 3, 2022
- Purdue Research Foundation
- Tillmann C. Kubis
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURES WITH MULTIPLE THRESHOLD VOLTAGE OFFERINGS...
- Publication number 20220320293
- Publication date Oct 6, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Shan-Mei Liao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL SEMICONDUCTOR DEVICE WITH ENHANCED CONTACT STRUCTURE AND A...
- Publication number 20220285498
- Publication date Sep 8, 2022
- ATOMERA INCORPORATED
- Robert John Stephenson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STEEP SLOPED VERTICAL TUNNEL FIELD-EFFECT TRANSISTOR
- Publication number 20220278203
- Publication date Sep 1, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Peter Ramvall
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE INCLUDING A SUPERLATTICE AND AN ASYMMETRIC CHA...
- Publication number 20220238710
- Publication date Jul 28, 2022
- ATOMERA INCORPORATED
- HIDEKI TAKEUCHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE INCLUDING CAPACITOR
- Publication number 20220238691
- Publication date Jul 28, 2022
- Samsung Electronics Co., Ltd.
- Sunmin MOON
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE INCLUDING SUPERLATTICE WITH OXYGEN AND CARBON...
- Publication number 20220005926
- Publication date Jan 6, 2022
- ATOMERA INCORPORATED
- KEITH DORAN WEEKS
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MAKING SEMICONDUCTOR DEVICE INCLUDING SUPERLATTICE WITH...
- Publication number 20220005927
- Publication date Jan 6, 2022
- ATOMERA INCORPORATED
- KEITH DORAN WEEKS
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE INCLUDING A SUPERLATTICE AND PROVIDING REDUCED...
- Publication number 20210391426
- Publication date Dec 16, 2021
- ATOMERA INCORPORATED
- HIDEKI TAKEUCHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE INCLUDING CAPACITOR
- Publication number 20210359102
- Publication date Nov 18, 2021
- Samsung Electronics Co., Ltd.
- Sunmin MOON
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE INCLUDING A SUPERLATTICE WITH DIFFERENT NON-SE...
- Publication number 20210265465
- Publication date Aug 26, 2021
- ATOMERA INCORPORATED
- KEITH DORAN WEEKS
- H01 - BASIC ELECTRIC ELEMENTS

with quantum effects only in vertical direction

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Semiconductor device including superlattice with O18 enriched monol...

Semiconductor device including a superlattice and an asymmetric cha...

Semiconductor structures with multiple threshold voltage offerings...

Method for making gate-all-around (GAA) device including a superlat...

Enhanced cascade field effect transistor

Method for making semiconductor device including superlattice with...

Steep sloped vertical tunnel field-effect transistor

Gate-all-around (GAA) device including a superlattice

Methods for making bipolar junction transistors including emitter-b...

Bipolar junction transistors including emitter-base and base-collec...

Semiconductor device including a superlattice and an asymmetric cha...

Method for making semiconductor device including superlattice with...

Semiconductor device including superlattice with oxygen and carbon...

Semiconductor device including capacitor

Semiconductor device including superlattice with O18 enriched monol...

Method for making semiconductor device including superlattice with...

Vertical semiconductor device with enhanced contact structure and a...

Method for making an inverted T channel field effect transistor (IT...

Superlattice films for photonic and electronic devices

Semiconductor device including capacitor

Quantum dot devices with selectors

Semiconductor device including a superlattice and providing reduced...

Methods for making bipolar junction transistors including emitter-b...

Bipolar junction transistors including emitter-base and base-collec...

Vertical semiconductor device with enhanced contact structure and a...

Enhanced cascade field effect transistor

Method for making semiconductor device including vertically integra...

Steep sloped vertical tunnel field-effect transistor

Semiconductor device including a superlattice and an asymmetric cha...

Semiconductor device, method of manufacturing the same and electron...

Patents Applicationslast 30 patents

METHOD FOR MAKING GATE-ALL-AROUND (GAA) DEVICE INCLUDING A SUPERLAT...

MEMORY DEVICE INCLUDING A SUPERLATTICE GETTERING LAYER

METHOD FOR MAKING MEMORY DEVICE INCLUDING A SUPERLATTICE GETTERING...

METHOD FOR MAKING SEMICONDUCTOR DEVICE INCLUDING SUPERLATTICE WITH...

SEMICONDUCTOR STRUCTURES WITH MULTIPLE THRESHOLD VOLTAGE OFFERINGS...

Quantum Dipole Battery

METHODS FOR MAKING BIPOLAR JUNCTION TRANSISTORS INCLUDING EMITTER-B...

GATE-ALL-AROUND (GAA) DEVICE INCLUDING A SUPERLATTICE

BIPOLAR JUNCTION TRANSISTORS INCLUDING EMITTER-BASE AND BASE-COLLEC...

SEMICONDUCTOR DEVICE INCLUDING A SUPERLATTICE AND AN ASYMMETRIC CHA...

METHOD FOR MAKING SEMICONDUCTOR DEVICE INCLUDING SUPERLATTICE WITH...

SEMICONDUCTOR DEVICE INCLUDING SUPERLATTICE WITH O18 ENRICHED MONOL...

SEMICONDUCTOR DEVICE WITH HIGH-ELECTRON MOBILITY TRANSISTOR

GATE-ALL-AROUND (GAA) DEVICE INCLUDING A SUPERLATTICE

METHOD FOR MAKING GATE-ALL-AROUND (GAA) DEVICE INCLUDING A SUPERLAT...

SEMICONDUCTOR DEVICE INCLUDING SUPERLATTICE WITH O18 ENRICHED MONOL...

METHOD FOR MAKING SEMICONDUCTOR DEVICE INCLUDING SUPERLATTICE WITH...

BIPOLAR JUNCTION TRANSISTORS INCLUDING EMITTER-BASE AND BASE-COLLEC...

METHODS FOR MAKING BIPOLAR JUNCTION TRANSISTORS INCLUDING EMITTER-B...

ENHANCED CASCADE FIELD EFFECT TRANSISTOR

SEMICONDUCTOR STRUCTURES WITH MULTIPLE THRESHOLD VOLTAGE OFFERINGS...

VERTICAL SEMICONDUCTOR DEVICE WITH ENHANCED CONTACT STRUCTURE AND A...

STEEP SLOPED VERTICAL TUNNEL FIELD-EFFECT TRANSISTOR

SEMICONDUCTOR DEVICE INCLUDING A SUPERLATTICE AND AN ASYMMETRIC CHA...

SEMICONDUCTOR DEVICE INCLUDING CAPACITOR

SEMICONDUCTOR DEVICE INCLUDING SUPERLATTICE WITH OXYGEN AND CARBON...

METHOD FOR MAKING SEMICONDUCTOR DEVICE INCLUDING SUPERLATTICE WITH...

SEMICONDUCTOR DEVICE INCLUDING A SUPERLATTICE AND PROVIDING REDUCED...

SEMICONDUCTOR DEVICE INCLUDING CAPACITOR

SEMICONDUCTOR DEVICE INCLUDING A SUPERLATTICE WITH DIFFERENT NON-SE...