with turn-off by field effect

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H01L29/745

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier

Current Industry

H01L29/745with turn-off by field effect

Industries

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Patents Grantslast 30 patents

Information Patent Grant
Cell structure and its related semiconductor device
- Patent number 12,154,977
- Issue date Nov 26, 2024
- Nanjing Sinnopower Technology Co., Ltd.
- Wenfang Du
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power semiconductor device comprising a thyristor and a bipolar jun...
- Patent number 12,148,818
- Issue date Nov 19, 2024
- HITACHI ENERGY LTD
- Tobias Wikstroem
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Insulated-gate semiconductor device and method of manufacturing the...
- Patent number 12,074,200
- Issue date Aug 27, 2024
- Fuji Electric Co., Ltd.
- Keiji Okumura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Thyristor assembly
- Patent number 12,021,138
- Issue date Jun 25, 2024
- Littelfuse, Inc.
- Koichiro Yoshimoto
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Thyristor assembly
- Patent number 11,978,787
- Issue date May 7, 2024
- Littelfuse, Inc.
- Koichiro Yoshimoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Segmented power diode structure with improved reverse recovery
- Patent number 11,967,638
- Issue date Apr 23, 2024
- HITACHI ENERGY LTD
- Tobias Wikstroem
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon-controlled rectifiers in a silicon-on-insulator technology
- Patent number 11,935,946
- Issue date Mar 19, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Shesh Mani Pandey
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Etch stop layer for injecting carriers into drift layer for a verti...
- Patent number 11,916,138
- Issue date Feb 27, 2024
- Pakal Technologies, Inc.
- Paul M Moore
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Insulated trench gates with dopants implanted through gate oxide
- Patent number 11,824,092
- Issue date Nov 21, 2023
- Pakal Technologies, Inc.
- Paul M. Moore
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Insulated-gate semiconductor device and method of manufacturing the...
- Patent number 11,798,993
- Issue date Oct 24, 2023
- Fuji Electric Co., Ltd.
- Keiji Okumura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
MOS(metal oxide silicon) controlled thyristor device
- Patent number 11,784,247
- Issue date Oct 10, 2023
- Electronics and Telecommunications Research Institute
- Kun Sik Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Anti-parallel diode formed using damaged crystal structure in a ver...
- Patent number 11,757,017
- Issue date Sep 12, 2023
- Pakal Technologies, Inc.
- Paul M Moore
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate-turn-off thyristor and manufacturing method thereof
- Patent number 11,705,510
- Issue date Jul 18, 2023
- HANGZHOU UG MIN SEMICONDUCTOR TECHNOLOGY CO. LTD
- Simin Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Metal oxide semiconductor-controlled thyristor device having unifor...
- Patent number 11,637,192
- Issue date Apr 25, 2023
- Electronics and Telecommunications Research Institute
- Kun Sik Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Insulated-gate semiconductor device
- Patent number 11,610,969
- Issue date Mar 21, 2023
- Fuji Electric Co., Ltd.
- Keiji Okumura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
NPNP layered MOS-gated trench device having lowered operating voltage
- Patent number 11,610,987
- Issue date Mar 21, 2023
- Pakal Technologies, Inc.
- Paul M Moore
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for reduced bias threshold instability
- Patent number 11,417,759
- Issue date Aug 16, 2022
- General Electric Company
- Stephen Daley Arthur
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Cell layouts for MOS-gated devices for improved forward voltage
- Patent number 11,393,901
- Issue date Jul 19, 2022
- Pakal Technologies, Inc.
- Richard A. Blanchard
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Thyristor assembly
- Patent number 11,349,021
- Issue date May 31, 2022
- Littelfuse, Inc.
- Koichiro Yoshimoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Automatically limiting power consumption by devices using infrared...
- Patent number 11,289,619
- Issue date Mar 29, 2022
- Dell Products L.P.
- Gian Martini
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Insulated-gate semiconductor device and method of manufacturing the...
- Patent number 11,177,350
- Issue date Nov 16, 2021
- Fuji Electric Co., Ltd.
- Keiji Okumura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing semiconductor integrated circuit
- Patent number 11,164,797
- Issue date Nov 2, 2021
- Fuji Electric Co., Ltd.
- Yoshiaki Toyoda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Enclosed gate runner for eliminating miller turn-on
- Patent number 11,127,845
- Issue date Sep 21, 2021
- Delta Electronics, Inc.
- Wen-Chia Liao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Insulated gate turn-off device with designated breakdown areas betw...
- Patent number 11,114,552
- Issue date Sep 7, 2021
- Pakal Technologies, Inc.
- Paul M. Moore
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Lateral insulated gate turn-off device with induced emitter
- Patent number 11,114,553
- Issue date Sep 7, 2021
- Pakal Technologies, Inc.
- Richard A. Blanchard
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Light-emitting component having light-absorbing layer, light-emitti...
- Patent number 11,043,530
- Issue date Jun 22, 2021
- FUJIFILM Business Innovation Corp.
- Takashi Kondo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Electric field shielding in silicon carbide metal-oxide-semiconduct...
- Patent number 10,937,870
- Issue date Mar 2, 2021
- General Electric Company
- Alexander Viktorovich Bolotnikov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide epitaxial substrate and method of manufacturing sil...
- Patent number 10,865,501
- Issue date Dec 15, 2020
- Sumitomo Electric Industries, Ltd.
- Tsutomu Hori
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Enhancements to cell layout and fabrication techniques for MOS-gate...
- Patent number 10,797,131
- Issue date Oct 6, 2020
- Pakal Technologies, Inc.
- Richard A. Blanchard
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of manufacturing same
- Patent number 10,790,373
- Issue date Sep 29, 2020
- Fuji Electric Co., Ltd.
- Makoto Utsumi
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR OPERATING A SEMICONDUCTOR DEVICE
- Publication number 20250015172
- Publication date Jan 9, 2025
- Hitachi Energy Ltd
- Tobias WIKSTROEM
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE TUNNEL CURRENT-TRIGGERED SEMICONDUCTOR CONTROLLED RECTIFIER
- Publication number 20240266422
- Publication date Aug 8, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Anupam Dutta
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE-COMMUTED THYRISTOR CELL WITH A BASE REGION HAVING A VARYING TH...
- Publication number 20240162295
- Publication date May 16, 2024
- Hitachi Energy Ltd
- Umamaheswara VEMULAPATI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INSULATED GATE TURN-OFF DEVICE WITH SHORT CHANNEL PMOS TRANSISTOR
- Publication number 20240088226
- Publication date Mar 14, 2024
- Pakal Technologies, Inc.
- Hidenori Akiyama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INSULATED-GATE SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE...
- Publication number 20240014270
- Publication date Jan 11, 2024
- Fuji Electric Co., Ltd.
- Keiji OKUMURA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON-CONTROLLED RECTIFIERS IN A SILICON-ON-INSULATOR TECHNOLOGY
- Publication number 20230420551
- Publication date Dec 28, 2023
- GLOBALFOUNDRIES U.S. Inc.
- Shesh Mani Pandey
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
COMPOSITIONS AND METHODS FOR MARKING HYDROCARBON COMPOSITIONS WITH...
- Publication number 20230326968
- Publication date Oct 12, 2023
- United Color Manufacturing, Inc.
- Haresh DOSHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INSULATED-GATE SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE...
- Publication number 20230154986
- Publication date May 18, 2023
- FUJI ELECTRIC CO., LTD.
- Keiji OKUMURA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Turn-Off Power Semiconductor Device with Gate Runners
- Publication number 20230136897
- Publication date May 4, 2023
- Hitachi Energy Switzerland AG
- Tobias Wikstroem
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Power Semiconductor Device Comprising a Thyristor and a Bipolar Jun...
- Publication number 20230118951
- Publication date Apr 20, 2023
- Hitachi Energy Switzerland AG
- Tobias Wikstroem
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MOS(METAL OXIDE SILICON) CONTROLLED THYRISTOR DEVICE
- Publication number 20230087416
- Publication date Mar 23, 2023
- ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE
- Kun Sik PARK
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NPNP LAYERED MOS-GATED TRENCH DEVICE HAVING LOWERED OPERATING VOLTAGE
- Publication number 20220376095
- Publication date Nov 24, 2022
- PAKAL TECHNOLOGIES, LLC
- Paul M Moore
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CELL STRUCTURE AND ITS RELATED SEMICONDUCTOR DEVICE
- Publication number 20220367692
- Publication date Nov 17, 2022
- NANJING SINNOPOWER TECHNOLOGY CO., LTD.
- Wenfang DU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ANTI-PARALLEL DIODE FORMED USING DAMAGED CRYSTAL STRUCTURE IN A VER...
- Publication number 20220344493
- Publication date Oct 27, 2022
- Pakal Technologies, Inc.
- Paul M. Moore
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ETCH STOP LAYER FOR INJECTING CARRIERS INTO DRIFT LAYER FOR A VERTI...
- Publication number 20220344498
- Publication date Oct 27, 2022
- Pakal Technologies, Inc.
- Paul M. Moore
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Segmented Power Diode Structure with Improved Reverse Recovery
- Publication number 20220181473
- Publication date Jun 9, 2022
- Tobias Wikstroem
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THYRISTOR ASSEMBLY
- Publication number 20220173232
- Publication date Jun 2, 2022
- LITTELFUSE, INC.
- Koichiro Yoshimoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INSULATED TRENCH GATES WITH DOPANTS IMPLANTED THROUGH GATE OXIDE
- Publication number 20220045168
- Publication date Feb 10, 2022
- Pakal Technologies, Inc.
- Paul M. Moore
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INSULATED-GATE SEMICONDUCTOR DEVICE
- Publication number 20220013637
- Publication date Jan 13, 2022
- Fuji Electric Co., Ltd.
- Keiji OKUMURA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METAL OXIDE SEMICONDUCTOR-CONTROLLED THYRISTOR DEVICE HAVING UNIFOR...
- Publication number 20210408265
- Publication date Dec 30, 2021
- ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE
- Kun Sik PARK
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THYRISTOR ASSEMBLY
- Publication number 20210305415
- Publication date Sep 30, 2021
- LITTELFUSE, INC.
- Koichiro Yoshimoto
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Application
Gate-turn-off thyristor and manufacturing method thereof
- Publication number 20210257485
- Publication date Aug 19, 2021
- HANGZHOU UG MIN SEMICONDUCTOR TECHNOLOGY CO. LTD
- Simin LI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
AUTOMATICALLY LIMITING POWER CONSUMPTION BY DEVICES USING INFRARED...
- Publication number 20210135037
- Publication date May 6, 2021
- Dell Products L.P.
- Gian Martini
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CELL LAYOUTS FOR MOS-GATED DEVICES FOR IMPROVED FORWARD VOLTAGE
- Publication number 20210028279
- Publication date Jan 28, 2021
- Pakal Technologies, Inc.
- Richard A. Blanchard
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LATERAL INSULATED GATE TURN-OFF DEVICE WITH INDUCED EMITTER
- Publication number 20200312987
- Publication date Oct 1, 2020
- Pakal Technologies, Inc.
- Richard A. Blanchard
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INSULATED GATE TURN-OFF DEVICE WITH DESIGNATED BREAKDOWN AREAS BETW...
- Publication number 20200312988
- Publication date Oct 1, 2020
- Pakal Technologies, Inc.
- Paul M. Moore
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ELECTRIC FIELD SHIELDING IN SILICON CARBIDE METAL-OXIDE-SEMICONDUCT...
- Publication number 20200258985
- Publication date Aug 13, 2020
- GENERAL ELECTRIC COMPANY
- Alexander Viktorovich Bolotnikov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INSULATED-GATE SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE...
- Publication number 20200235210
- Publication date Jul 23, 2020
- Fuji Electric Co., Ltd.
- Keiji OKUMURA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INSULATED-GATE SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE...
- Publication number 20200058740
- Publication date Feb 20, 2020
- Fuji Electric Co., Ltd.
- Keiji OKUMURA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL INSULATED GATE TURN-OFF THYRISTOR WITH INTERMEDIATE P+ LAY...
- Publication number 20190393331
- Publication date Dec 26, 2019
- Pakal Technologies, Inc.
- Hidenori Akiyama
- H01 - BASIC ELECTRIC ELEMENTS

with turn-off by field effect

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Cell structure and its related semiconductor device

Power semiconductor device comprising a thyristor and a bipolar jun...

Insulated-gate semiconductor device and method of manufacturing the...

Thyristor assembly

Thyristor assembly

Segmented power diode structure with improved reverse recovery

Silicon-controlled rectifiers in a silicon-on-insulator technology

Etch stop layer for injecting carriers into drift layer for a verti...

Insulated trench gates with dopants implanted through gate oxide

Insulated-gate semiconductor device and method of manufacturing the...

MOS(metal oxide silicon) controlled thyristor device

Anti-parallel diode formed using damaged crystal structure in a ver...

Gate-turn-off thyristor and manufacturing method thereof

Metal oxide semiconductor-controlled thyristor device having unifor...

Insulated-gate semiconductor device

NPNP layered MOS-gated trench device having lowered operating voltage

Semiconductor device and method for reduced bias threshold instability

Cell layouts for MOS-gated devices for improved forward voltage

Thyristor assembly

Automatically limiting power consumption by devices using infrared...

Insulated-gate semiconductor device and method of manufacturing the...

Method of manufacturing semiconductor integrated circuit

Enclosed gate runner for eliminating miller turn-on

Insulated gate turn-off device with designated breakdown areas betw...

Lateral insulated gate turn-off device with induced emitter

Light-emitting component having light-absorbing layer, light-emitti...

Electric field shielding in silicon carbide metal-oxide-semiconduct...

Silicon carbide epitaxial substrate and method of manufacturing sil...

Enhancements to cell layout and fabrication techniques for MOS-gate...

Semiconductor device and method of manufacturing same

Patents Applicationslast 30 patents

SEMICONDUCTOR DEVICE AND METHOD FOR OPERATING A SEMICONDUCTOR DEVICE

GATE TUNNEL CURRENT-TRIGGERED SEMICONDUCTOR CONTROLLED RECTIFIER

GATE-COMMUTED THYRISTOR CELL WITH A BASE REGION HAVING A VARYING TH...

INSULATED GATE TURN-OFF DEVICE WITH SHORT CHANNEL PMOS TRANSISTOR

INSULATED-GATE SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE...

SILICON-CONTROLLED RECTIFIERS IN A SILICON-ON-INSULATOR TECHNOLOGY

COMPOSITIONS AND METHODS FOR MARKING HYDROCARBON COMPOSITIONS WITH...

INSULATED-GATE SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE...

Turn-Off Power Semiconductor Device with Gate Runners

Power Semiconductor Device Comprising a Thyristor and a Bipolar Jun...

MOS(METAL OXIDE SILICON) CONTROLLED THYRISTOR DEVICE

NPNP LAYERED MOS-GATED TRENCH DEVICE HAVING LOWERED OPERATING VOLTAGE

CELL STRUCTURE AND ITS RELATED SEMICONDUCTOR DEVICE

ANTI-PARALLEL DIODE FORMED USING DAMAGED CRYSTAL STRUCTURE IN A VER...

ETCH STOP LAYER FOR INJECTING CARRIERS INTO DRIFT LAYER FOR A VERTI...

Segmented Power Diode Structure with Improved Reverse Recovery

THYRISTOR ASSEMBLY

INSULATED TRENCH GATES WITH DOPANTS IMPLANTED THROUGH GATE OXIDE

INSULATED-GATE SEMICONDUCTOR DEVICE

METAL OXIDE SEMICONDUCTOR-CONTROLLED THYRISTOR DEVICE HAVING UNIFOR...

THYRISTOR ASSEMBLY

Gate-turn-off thyristor and manufacturing method thereof

AUTOMATICALLY LIMITING POWER CONSUMPTION BY DEVICES USING INFRARED...

CELL LAYOUTS FOR MOS-GATED DEVICES FOR IMPROVED FORWARD VOLTAGE

LATERAL INSULATED GATE TURN-OFF DEVICE WITH INDUCED EMITTER

INSULATED GATE TURN-OFF DEVICE WITH DESIGNATED BREAKDOWN AREAS BETW...

ELECTRIC FIELD SHIELDING IN SILICON CARBIDE METAL-OXIDE-SEMICONDUCT...

INSULATED-GATE SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE...

INSULATED-GATE SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE...

VERTICAL INSULATED GATE TURN-OFF THYRISTOR WITH INTERMEDIATE P+ LAY...