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H01L29/4236

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier

Current Industry

H01L29/4236within a trench

Industries

Patents Grantslast 30 patents

Information Patent Grant
Semiconductor device and method for manufacturing the same
- Patent number 11,961,890
- Issue date Apr 16, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Hsin-Fu Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device, method of manufacturing a semiconductor devic...
- Patent number 11,961,865
- Issue date Apr 16, 2024
- Sony Group Corporation
- Hideaki Togashi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate oxide structures in semiconductor devices
- Patent number 11,961,766
- Issue date Apr 16, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chung-Liang Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Imaging element, imaging device, and manufacturing apparatus and me...
- Patent number 11,961,857
- Issue date Apr 16, 2024
- SONY SEMICONDUCTOR SOLUTIONS CORPORATION
- Shinpei Fukuoka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Laterally-diffused metal-oxide semiconductor transistor and method...
- Patent number 11,961,907
- Issue date Apr 16, 2024
- NXP USA, INC.
- Saumitra Raj Mehrotra
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
3D semiconductor device and structure with metal layers
- Patent number 11,961,827
- Issue date Apr 16, 2024
- Monolithic 3D Inc.
- Zvi Or-Bach
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device including a gate structure
- Patent number 11,955,523
- Issue date Apr 9, 2024
- Samsung Electronics Co., Ltd.
- Namgyu Cho
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 11,955,542
- Issue date Apr 9, 2024
- Vanguard International Semiconductor Corporation
- Hsin-Chih Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing a semiconductor device
- Patent number 11,955,516
- Issue date Apr 9, 2024
- Samsung Electronics Co., Ltd.
- Ho-Jun Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Manufacturable thin film gallium and nitrogen containing devices
- Patent number 11,955,521
- Issue date Apr 9, 2024
- KYOCERA SLD Laser, Inc.
- James W. Raring
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of forming the same
- Patent number 11,955,525
- Issue date Apr 9, 2024
- Samsung Electronics Co., Ltd.
- Junghwan Huh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for controlling same
- Patent number 11,955,546
- Issue date Apr 9, 2024
- Kabushiki Kaisha Toshiba
- Takeshi Suwa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for fabricating the same
- Patent number 11,948,975
- Issue date Apr 2, 2024
- United Microelectronics Corp.
- Chih-Kai Hsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Recessed gate for an MV device
- Patent number 11,948,938
- Issue date Apr 2, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Yi-Huan Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High voltage polysilicon gate in high-K metal gate device
- Patent number 11,950,413
- Issue date Apr 2, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Meng-Han Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Manufacturable thin film gallium and nitrogen containing devices
- Patent number 11,948,980
- Issue date Apr 2, 2024
- KYOCERA SLD Laser, Inc.
- James W. Raring
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical gate field effect transistor
- Patent number 11,948,949
- Issue date Apr 2, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chun-Yuan Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Uneven-trench pixel cell and fabrication method
- Patent number 11,948,965
- Issue date Apr 2, 2024
- OmniVision Technologies, Inc.
- Hui Zang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High voltage transistor structure
- Patent number 11,942,475
- Issue date Mar 26, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Meng-Han Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Quantum dot devices with overlapping gates
- Patent number 11,942,516
- Issue date Mar 26, 2024
- Intel Corporation
- Nicole K. Thomas
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Semiconductor device including buried gate structure and method for...
- Patent number 11,943,912
- Issue date Mar 26, 2024
- SK Hynix Inc.
- Dong-Soo Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device structure with high voltage device
- Patent number 11,942,543
- Issue date Mar 26, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Hung-Chou Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device including transistor including horizontal gate...
- Patent number 11,942,544
- Issue date Mar 26, 2024
- SK Hynix Inc.
- Young Gwang Yoon
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for fabricating the same
- Patent number 11,935,934
- Issue date Mar 19, 2024
- SK Hynix Inc.
- Young Gwang Yoon
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor including a hydrogen-diffusion barrier and methods for f...
- Patent number 11,935,935
- Issue date Mar 19, 2024
- Taiwan Semiconductor Manufacturing Company Limited
- Min-Kun Dai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having buried gate structure and method for fa...
- Patent number 11,935,939
- Issue date Mar 19, 2024
- SK Hynix Inc.
- Dong-Soo Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having buried gate structure and method for fa...
- Patent number 11,935,792
- Issue date Mar 19, 2024
- SK Hynix Inc.
- Dong-Soo Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of fabricating the same
- Patent number 11,935,924
- Issue date Mar 19, 2024
- Samsung Electronics Co., Ltd.
- Noh Yeong Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Backside contact structures and fabrication for metal on both sides...
- Patent number 11,935,933
- Issue date Mar 19, 2024
- Intel Corporation
- Patrick Morrow
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ferroelectric gate stack for band-to-band tunneling reduction
- Patent number 11,929,435
- Issue date Mar 12, 2024
- Intel Corporation
- Gilbert Dewey
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SEMICONDUCTOR DEVICE WITH VOLTAGE RESISTANT STRUCTURE
- Publication number 20240128315
- Publication date Apr 18, 2024
- ROHM CO., LTD.
- Yuki Nakano
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SWITCHING ELEMENT AND SEMICONDUCTOR DEVICE
- Publication number 20240128338
- Publication date Apr 18, 2024
- Rohm Co., Ltd.
- YUYA TAMURA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD-EFFECT TRANSISTOR, AND METHODS FOR PRODUCTION
- Publication number 20240128342
- Publication date Apr 18, 2024
- ROBERT BOSCH GmbH
- Daniel Krebs
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SPLIT GATE TRENCH DEVICE
- Publication number 20240128344
- Publication date Apr 18, 2024
- EXCELLIANCE MOS CORPORATION
- Chu-Kuang Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MANUFACTURING TRENCH MOSFET
- Publication number 20240128370
- Publication date Apr 18, 2024
- Hangzhou Silicon-Magic Semiconductor Technology Co., Ltd.
- Jinyong Cai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MANUFACTURING METHOD OF SPLIT GATE TRENCH DEVICE
- Publication number 20240128343
- Publication date Apr 18, 2024
- EXCELLIANCE MOS CORPORATION
- Chu-Kuang Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
- Publication number 20240128350
- Publication date Apr 18, 2024
- Fuji Electric Co., Ltd.
- Seiji NOGUCHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
- Publication number 20240128371
- Publication date Apr 18, 2024
- DENSO CORPORATION
- YUICHI MORI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD EFFECT TRANSISTOR AND FABRICATION METHOD THEREOF
- Publication number 20240128324
- Publication date Apr 18, 2024
- UNITED MICROELECTRONICS CORP.
- Kuo-Chih Lai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD
- Publication number 20240128359
- Publication date Apr 18, 2024
- Fuji Electric Co., Ltd.
- Motoyoshi KUBOUCHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
3D SEMICONDUCTOR DEVICE AND STRUCTURE WITH MEMORY
- Publication number 20240128116
- Publication date Apr 18, 2024
- Monolithic 3D Inc.
- Zvi Or-Bach
- G11 - INFORMATION STORAGE
Information Patent Application
SELF-PASSIVATED NITROGEN-POLAR III-NITRIDE TRANSISTOR
- Publication number 20240128367
- Publication date Apr 18, 2024
- HRL LABORATORIES, LLC
- Daniel DENNINGHOFF
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE AND METHODS FOR MANUFACTURING THE SAME
- Publication number 20240128313
- Publication date Apr 18, 2024
- Vanguard International Semiconductor Corporation
- Tse-Hsiao LIU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH ELECTRON MOBILITY TRANSISTOR WITH IMPROVED BARRIER LAYER
- Publication number 20240120416
- Publication date Apr 11, 2024
- UNITED MICROELECTRONICS CORP.
- Po-Yu Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ISOLATION STRUCTURES OF SEMICONDUCTOR DEVICES
- Publication number 20240120373
- Publication date Apr 11, 2024
- GLOBALFOUNDRIES U.S. Inc.
- HONG YU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20240120412
- Publication date Apr 11, 2024
- Fuji Electric Co., Ltd.
- Seiji NOGUCHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRENCH SHIELDED TRANSISTOR
- Publication number 20240113217
- Publication date Apr 4, 2024
- TEXAS INSTRUMENTS INCORPORATED
- Hong Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Trench FET Device and Method of Manufacturing Trench FET Device
- Publication number 20240113186
- Publication date Apr 4, 2024
- Huawei Technologies Co., Ltd
- Mo huai Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
3D SEMICONDUCTOR DEVICE AND STRUCTURE WITH SINGLE-CRYSTAL LAYERS
- Publication number 20240112942
- Publication date Apr 4, 2024
- Monolithic 3D Inc.
- Zvi Or-Bach
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME
- Publication number 20240113160
- Publication date Apr 4, 2024
- Samsung Electronics Co., Ltd.
- Juseong MIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
COMPOSITE GATE DIELECTRIC FOR HIGH-VOLTAGE DEVICE
- Publication number 20240113187
- Publication date Apr 4, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Jhu-Min Song
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
- Publication number 20240113189
- Publication date Apr 4, 2024
- Mitsubishi Electric Corporation
- Koichi NISHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
- Publication number 20240113208
- Publication date Apr 4, 2024
- Mitsubishi Electric Corporation
- Kohei SAKO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT DEVICE AND METHOD OF MANUFACTURING THE SAME
- Publication number 20240105791
- Publication date Mar 28, 2024
- Samsung Electronics Co., Ltd.
- Daeyoung MOON
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTORS DESIGNED WITH REDUCED LEAKAGE
- Publication number 20240105793
- Publication date Mar 28, 2024
- pSemi Corporation
- Simon WILLARD
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT DEVICE
- Publication number 20240105790
- Publication date Mar 28, 2024
- Samsung Electronics Co., Ltd.
- Joonsoo PARK
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20240105836
- Publication date Mar 28, 2024
- ROHM CO., LTD.
- Yuki NAKANO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TOP-GATE DOPED THIN FILM TRANSISTOR
- Publication number 20240105852
- Publication date Mar 28, 2024
- Intel Corporation
- Abhishek A. Sharma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRENCH MOSFET AND MANUFACTURING METHOD THEREFOR
- Publication number 20240105792
- Publication date Mar 28, 2024
- Hangzhou Silicon-Magic Semiconductor Technology Co., Ltd.
- Jinyong Cai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
3D SEMICONDUCTOR DEVICE AND STRUCTURE WITH MEMORY
- Publication number 20240105490
- Publication date Mar 28, 2024
- Monolithic 3D Inc.
- Zvi Or-Bach
- G11 - INFORMATION STORAGE

within a trench

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Semiconductor device and method for manufacturing the same

Semiconductor device, method of manufacturing a semiconductor devic...

Gate oxide structures in semiconductor devices

Imaging element, imaging device, and manufacturing apparatus and me...

Laterally-diffused metal-oxide semiconductor transistor and method...

3D semiconductor device and structure with metal layers

Semiconductor device including a gate structure

Semiconductor device

Method for manufacturing a semiconductor device

Manufacturable thin film gallium and nitrogen containing devices

Semiconductor device and method of forming the same

Semiconductor device and method for controlling same

Semiconductor device and method for fabricating the same

Recessed gate for an MV device

High voltage polysilicon gate in high-K metal gate device

Manufacturable thin film gallium and nitrogen containing devices

Vertical gate field effect transistor

Uneven-trench pixel cell and fabrication method

High voltage transistor structure

Quantum dot devices with overlapping gates

Semiconductor device including buried gate structure and method for...

Semiconductor device structure with high voltage device

Semiconductor device including transistor including horizontal gate...

Semiconductor device and method for fabricating the same

Transistor including a hydrogen-diffusion barrier and methods for f...

Semiconductor device having buried gate structure and method for fa...

Semiconductor device having buried gate structure and method for fa...

Semiconductor device and method of fabricating the same

Backside contact structures and fabrication for metal on both sides...

Ferroelectric gate stack for band-to-band tunneling reduction

Patents Applicationslast 30 patents

SEMICONDUCTOR DEVICE WITH VOLTAGE RESISTANT STRUCTURE

SWITCHING ELEMENT AND SEMICONDUCTOR DEVICE

FIELD-EFFECT TRANSISTOR, AND METHODS FOR PRODUCTION

SPLIT GATE TRENCH DEVICE

METHOD FOR MANUFACTURING TRENCH MOSFET

MANUFACTURING METHOD OF SPLIT GATE TRENCH DEVICE

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

FIELD EFFECT TRANSISTOR AND FABRICATION METHOD THEREOF

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD

3D SEMICONDUCTOR DEVICE AND STRUCTURE WITH MEMORY

SELF-PASSIVATED NITROGEN-POLAR III-NITRIDE TRANSISTOR

SEMICONDUCTOR STRUCTURE AND METHODS FOR MANUFACTURING THE SAME

HIGH ELECTRON MOBILITY TRANSISTOR WITH IMPROVED BARRIER LAYER

ISOLATION STRUCTURES OF SEMICONDUCTOR DEVICES

SEMICONDUCTOR DEVICE

TRENCH SHIELDED TRANSISTOR

Trench FET Device and Method of Manufacturing Trench FET Device

3D SEMICONDUCTOR DEVICE AND STRUCTURE WITH SINGLE-CRYSTAL LAYERS

SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME

COMPOSITE GATE DIELECTRIC FOR HIGH-VOLTAGE DEVICE

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

INTEGRATED CIRCUIT DEVICE AND METHOD OF MANUFACTURING THE SAME

TRANSISTORS DESIGNED WITH REDUCED LEAKAGE

INTEGRATED CIRCUIT DEVICE

SEMICONDUCTOR DEVICE

TOP-GATE DOPED THIN FILM TRANSISTOR

TRENCH MOSFET AND MANUFACTURING METHOD THEREFOR

3D SEMICONDUCTOR DEVICE AND STRUCTURE WITH MEMORY