Writing or programming circuits or methods

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GPHYSICS G11Information storage G11CSTATIC STORES G11C11/00Digital stores characterised by the use of particular electric or magnetic storage elements Storage elements therefor

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G11C11/1675Writing or programming circuits or methods

Industries

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Patents Grantslast 30 patents

Information Patent Grant
System and method for nanomagnet based logic device
- Patent number 12,211,536
- Issue date Jan 28, 2025
- Ceremorphic, Inc.
- Sanghamitra Debroy
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetoresistive memory device and method of operating same using f...
- Patent number 12,211,535
- Issue date Jan 28, 2025
- SanDisk Technologies LLC
- Alan Kalitsov
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor memory device comprising magnetic tunnel junctions
- Patent number 12,213,322
- Issue date Jan 28, 2025
- Samsung Electronics Co., Ltd.
- Kyung Hwan Lee
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor wafer testing system and related method for improving...
- Patent number 12,210,055
- Issue date Jan 28, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Harry-Hak-Lay Chuang
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory cell with unipolar selectors
- Patent number 12,207,476
- Issue date Jan 21, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Katherine H. Chiang
- G11 - INFORMATION STORAGE
Information Patent Grant
Concurrent write to programmable resistance memory cells in cross-p...
- Patent number 12,205,638
- Issue date Jan 21, 2025
- SANDISK TECHNOLOGIES LLC
- Nathan Franklin
- G11 - INFORMATION STORAGE
Information Patent Grant
Cache memory and method of its manufacture
- Patent number 12,205,623
- Issue date Jan 21, 2025
- Institute of Microelectronics, Chinese Academy of Sciences
- Chong Bi
- G11 - INFORMATION STORAGE
Information Patent Grant
MRAM cell with pair of magnetic tunnel junctions having opposite st...
- Patent number 12,205,624
- Issue date Jan 21, 2025
- Korea Advanced Institute of Science and Technology
- Hoi Jun Yoo
- G11 - INFORMATION STORAGE
Information Patent Grant
Synapse memory
- Patent number 12,198,039
- Issue date Jan 14, 2025
- International Business Machines Corporation
- Takeo Yasuda
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Magnetic exchange coupled MTJ free layer having low switching curre...
- Patent number 12,190,925
- Issue date Jan 7, 2025
- International Business Machines Corporation
- Guohan Hu
- G11 - INFORMATION STORAGE
Information Patent Grant
Layout pattern of magnetoresistive random access memory
- Patent number 12,190,926
- Issue date Jan 7, 2025
- United Microelectronics Corp.
- Hung-Chan Lin
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory device with a bias circuit
- Patent number 12,190,927
- Issue date Jan 7, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Meng-Sheng Chang
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory array, memory cell, and data read and write method thereof
- Patent number 12,190,929
- Issue date Jan 7, 2025
- CHANGXIN MEMORY TECHNOLOGIES, INC.
- Yulei Wu
- G11 - INFORMATION STORAGE
Information Patent Grant
System and method for training artificial neural networks
- Patent number 12,182,697
- Issue date Dec 31, 2024
- Integrated Silicon Solution, (Cayman) Inc.
- Michail Tzoufras
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Enhancing tunnel magnetoresistance in memory device comprising a me...
- Patent number 12,183,379
- Issue date Dec 31, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Wen-Chin Lin
- G11 - INFORMATION STORAGE
Information Patent Grant
Multi-layered magnetic random access memory and electronic device
- Patent number 12,176,017
- Issue date Dec 24, 2024
- Huawei Technologies Co., Ltd.
- Li Ye
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory device having bitline segmented into bitline segments and re...
- Patent number 12,176,016
- Issue date Dec 24, 2024
- Taiwan Semiconductor Manufacturing Company Ltd.
- Shih-Lien Linus Lu
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic memory device
- Patent number 12,170,106
- Issue date Dec 17, 2024
- Kioxia Corporation
- Yoshiaki Asao
- G11 - INFORMATION STORAGE
Information Patent Grant
Storage element and storage apparatus
- Patent number 12,170,104
- Issue date Dec 17, 2024
- Sony Group Corporation
- Yutaka Higo
- G11 - INFORMATION STORAGE
Information Patent Grant
One time programmable (OTP) magnetoresistive random-access memory (...
- Patent number 12,170,105
- Issue date Dec 17, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Po-Hao Lee
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic memory devices
- Patent number 12,165,683
- Issue date Dec 10, 2024
- Samsung Electronics Co., Ltd.
- Stuart Papworth Parkin
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory device with write pulse trimming
- Patent number 12,165,704
- Issue date Dec 10, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Hiroki Noguchi
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory devices comprising magnetic tracks individually comprising a...
- Patent number 12,165,723
- Issue date Dec 10, 2024
- Micron Technology, Inc.
- Livio Baldi
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic memory device
- Patent number 12,160,997
- Issue date Dec 3, 2024
- Kioxia Corporation
- Masayoshi Iwayama
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic tunnel junction structures and related methods
- Patent number 12,160,998
- Issue date Dec 3, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Zong-You Luo
- G11 - INFORMATION STORAGE
Information Patent Grant
Ramp write techniques
- Patent number 12,159,659
- Issue date Dec 3, 2024
- ARM Limited
- Supreet Jeloka
- G11 - INFORMATION STORAGE
Information Patent Grant
Concurrent memory access operations
- Patent number 12,159,664
- Issue date Dec 3, 2024
- ARM Limited
- Lalit Gupta
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor device and semiconductor system
- Patent number 12,154,610
- Issue date Nov 26, 2024
- Renesas Electronics Corporation
- Genta Watanabe
- G11 - INFORMATION STORAGE
Information Patent Grant
In-memory computing using SOT-MRAM
- Patent number 12,154,609
- Issue date Nov 26, 2024
- INSTITUTE OF MICROELECTRONICS OF THE CHINESE ACADEMY OF SCIENCES
- Guozhong Xing
- G11 - INFORMATION STORAGE
Information Patent Grant
Method for manufacturing memory system including a storage device
- Patent number 12,148,469
- Issue date Nov 19, 2024
- Kioxia Corporation
- Tadashi Miyakawa
- G11 - INFORMATION STORAGE

Patents Applicationslast 30 patents

Information Patent Application
FIELD PROGRAMMABLE GATE ARRAY DEVICE INCLUDING SPIN ORBIT TORQUE-MA...
- Publication number 20250028458
- Publication date Jan 23, 2025
- Samsung Electronics Co., Ltd.
- Jongsun PARK
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
LOW RESISTANCE MTJ ANTIFUSE CIRCUITRY DESIGNS AND METHODS OF OPERATION
- Publication number 20250029645
- Publication date Jan 23, 2025
- EVERSPIN TECHNOLOGIES, INC.
- Syed M. ALAM
- G11 - INFORMATION STORAGE
Information Patent Application
METHODS OF OPERATING MAGNETIC MEMORY DEVICES
- Publication number 20250029670
- Publication date Jan 23, 2025
- Samsung Electronics Co., Ltd.
- Unghwan Pi
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETIC STACKED FILM AND MAGNETORESISTIVE EFFECT ELEMENT
- Publication number 20250031581
- Publication date Jan 23, 2025
- TOHOKU UNIVERSITY
- Yoshiaki SAITO
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETO RESISTIVE MEMORY FOR MONOLITHIC DATA PROCESSING
- Publication number 20250022497
- Publication date Jan 16, 2025
- Honeywell International Inc.
- Romney R. Katti
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETIC MEMORY AND MEMORY SYSTEM
- Publication number 20250022498
- Publication date Jan 16, 2025
- KIOXIA Corporation
- Shogo MUTO
- G11 - INFORMATION STORAGE
Information Patent Application
Doping Process To Refine Grain Size For Smoother BiSb Film Surface
- Publication number 20250014618
- Publication date Jan 9, 2025
- Western Digital Technologies, Inc.
- Quang LE
- G11 - INFORMATION STORAGE
Information Patent Application
Storage Array, and Interconnection Structure and Method for Operati...
- Publication number 20250006228
- Publication date Jan 2, 2025
- ZHEJIANG HIKSTOR TECHNOLOGY CO., LTD.
- Kunkun LI
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETORESISTIVE EFFECT MEMORY, MEMORY ARRAY, AND MEMORY SYSTEM
- Publication number 20250006237
- Publication date Jan 2, 2025
- Sony Semiconductor Solutions Corporation
- LUI SAKAI
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY SYSTEM
- Publication number 20240428836
- Publication date Dec 26, 2024
- KIOXIA Corporation
- Masahiko NAKAYAMA
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR DEVICE, STORAGE DEVICE, AND ELECTRONIC DEVICE
- Publication number 20240423096
- Publication date Dec 19, 2024
- SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
- Takanori MATSUZAKI
- G11 - INFORMATION STORAGE
Information Patent Application
SWITCHING OF PERPENDICULARLY MAGNETIZED NANOMAGNETS WITH SPIN-ORBIT...
- Publication number 20240412909
- Publication date Dec 12, 2024
- University of Rochester
- Eby G. Friedman
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MRAM BASED ON THE FERROMAGNETIC FILM WITH IN-PLANE BIAXIAL ANISOTROPY
- Publication number 20240395300
- Publication date Nov 28, 2024
- Korea University Research and Business Foundation
- Sanghoon LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAGNETIC STORAGE DEVICE PROVIDED WITH MAGNETORESISTIVE ELEMENT
- Publication number 20240395283
- Publication date Nov 28, 2024
- NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY
- Rie MATSUMOTO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CURRENT SOURCE FOR READ OF PROGRAMMABLE RESISTANCE MEMORY CELLS
- Publication number 20240395301
- Publication date Nov 28, 2024
- Western Digital Technologies, Inc.
- Christopher J. Petti
- G11 - INFORMATION STORAGE
Information Patent Application
NONVOLATILE MEMORY DEVICE
- Publication number 20240389470
- Publication date Nov 21, 2024
- Samsung Electronics Co., Ltd.
- Kilho LEE
- G11 - INFORMATION STORAGE
Information Patent Application
MULTI-TIME PROGRAMMABLE MEMORY DEVICES AND METHODS
- Publication number 20240379142
- Publication date Nov 14, 2024
- Western Digital Technologies, Inc.
- Mark Lin
- G11 - INFORMATION STORAGE
Information Patent Application
EXTERNAL MAGNETIC FIELD DETECTION FOR MRAM DEVICE
- Publication number 20240371459
- Publication date Nov 7, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Harry-Hak-Lay Chuang
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
METHOD FOR SWITCHING MAGNETIC MOMENTS IN MAGNETIC MATERIAL USING SE...
- Publication number 20240371424
- Publication date Nov 7, 2024
- Max-Planck-Gesellschaft zur Forderung der Wissenschaften e.V.
- Stuart S.P. PARKIN
- G11 - INFORMATION STORAGE
Information Patent Application
NON-VOLATILE MEMORY STORED WITH ENCODED DATA
- Publication number 20240371442
- Publication date Nov 7, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Win-San KHWA
- G11 - INFORMATION STORAGE
Information Patent Application
DIGITAL DEVICE, METHOD FOR PRODUCING SAME, AND METHOD FOR USING SAME
- Publication number 20240371559
- Publication date Nov 7, 2024
- TOHOKU UNIVERSITY
- Yutaro TAKEUCHI
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
MEMORY DEVICE WITH TUNABLE PROBABILISTIC STATE
- Publication number 20240363154
- Publication date Oct 31, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Ming Yuan Song
- G11 - INFORMATION STORAGE
Information Patent Application
SPIN CURRENT MAGNETIZATION ROTATIONAL ELEMENT, SPIN CURRENT MAGNETI...
- Publication number 20240365684
- Publication date Oct 31, 2024
- TDK Corporation
- Tomoyuki SASAKI
- G11 - INFORMATION STORAGE
Information Patent Application
NON-VOLATILE NANOMAGNETIC MATRIX MULTIPLIER-ACCUMULATOR
- Publication number 20240354522
- Publication date Oct 24, 2024
- Virginia Commonwealth University
- Supriyo BANDYOPADHYAY
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
THRESHOLD VOLTAGE-MODULATED MEMORY DEVICE USING VARIABLE-CAPACITANC...
- Publication number 20240357840
- Publication date Oct 24, 2024
- Taiwan Semiconductor Manufacturing Company Limited
- Fa-Shen JIANG
- G11 - INFORMATION STORAGE
Information Patent Application
PRESCRIPTIVE ANALYTICS IN HIGHLY COLLINEAR RESPONSE SPACE
- Publication number 20240355687
- Publication date Oct 24, 2024
- Applied Materials, Inc.
- Sidharth Bhatia
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
MEMORY DEVICE AND MEMORY SYSTEM
- Publication number 20240347091
- Publication date Oct 17, 2024
- Sony Semiconductor Solutions Corporation
- LUI SAKAI
- G11 - INFORMATION STORAGE
Information Patent Application
ELECTRONIC SYSTEM WITH NON-VOLATILE WRITING BY ELECTRICAL CONTROL A...
- Publication number 20240349625
- Publication date Oct 17, 2024
- Commissariat A L'Energie Atomique et Aux Energies Alternatives
- Cécile GREZES
- G11 - INFORMATION STORAGE
Information Patent Application
MRAM REFERENCE CURRENT
- Publication number 20240347090
- Publication date Oct 17, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chia-Fu Lee
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR STORAGE APPARATUS
- Publication number 20240339143
- Publication date Oct 10, 2024
- Sony Semiconductor Solutions Corporation
- TARO TATSUNO
- G11 - INFORMATION STORAGE

Writing or programming circuits or methods

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

System and method for nanomagnet based logic device

Magnetoresistive memory device and method of operating same using f...

Semiconductor memory device comprising magnetic tunnel junctions

Semiconductor wafer testing system and related method for improving...

Memory cell with unipolar selectors

Concurrent write to programmable resistance memory cells in cross-p...

Cache memory and method of its manufacture

MRAM cell with pair of magnetic tunnel junctions having opposite st...

Synapse memory

Magnetic exchange coupled MTJ free layer having low switching curre...

Layout pattern of magnetoresistive random access memory

Memory device with a bias circuit

Memory array, memory cell, and data read and write method thereof

System and method for training artificial neural networks

Enhancing tunnel magnetoresistance in memory device comprising a me...

Multi-layered magnetic random access memory and electronic device

Memory device having bitline segmented into bitline segments and re...

Magnetic memory device

Storage element and storage apparatus

One time programmable (OTP) magnetoresistive random-access memory (...

Magnetic memory devices

Memory device with write pulse trimming

Memory devices comprising magnetic tracks individually comprising a...

Magnetic memory device

Magnetic tunnel junction structures and related methods

Ramp write techniques

Concurrent memory access operations

Semiconductor device and semiconductor system

In-memory computing using SOT-MRAM

Method for manufacturing memory system including a storage device

Patents Applicationslast 30 patents

FIELD PROGRAMMABLE GATE ARRAY DEVICE INCLUDING SPIN ORBIT TORQUE-MA...

LOW RESISTANCE MTJ ANTIFUSE CIRCUITRY DESIGNS AND METHODS OF OPERATION

METHODS OF OPERATING MAGNETIC MEMORY DEVICES

MAGNETIC STACKED FILM AND MAGNETORESISTIVE EFFECT ELEMENT

MAGNETO RESISTIVE MEMORY FOR MONOLITHIC DATA PROCESSING

MAGNETIC MEMORY AND MEMORY SYSTEM

Doping Process To Refine Grain Size For Smoother BiSb Film Surface

Storage Array, and Interconnection Structure and Method for Operati...

MAGNETORESISTIVE EFFECT MEMORY, MEMORY ARRAY, AND MEMORY SYSTEM

MEMORY SYSTEM

SEMICONDUCTOR DEVICE, STORAGE DEVICE, AND ELECTRONIC DEVICE

SWITCHING OF PERPENDICULARLY MAGNETIZED NANOMAGNETS WITH SPIN-ORBIT...

MRAM BASED ON THE FERROMAGNETIC FILM WITH IN-PLANE BIAXIAL ANISOTROPY

MAGNETIC STORAGE DEVICE PROVIDED WITH MAGNETORESISTIVE ELEMENT

CURRENT SOURCE FOR READ OF PROGRAMMABLE RESISTANCE MEMORY CELLS

NONVOLATILE MEMORY DEVICE

MULTI-TIME PROGRAMMABLE MEMORY DEVICES AND METHODS

EXTERNAL MAGNETIC FIELD DETECTION FOR MRAM DEVICE

METHOD FOR SWITCHING MAGNETIC MOMENTS IN MAGNETIC MATERIAL USING SE...

NON-VOLATILE MEMORY STORED WITH ENCODED DATA

DIGITAL DEVICE, METHOD FOR PRODUCING SAME, AND METHOD FOR USING SAME

MEMORY DEVICE WITH TUNABLE PROBABILISTIC STATE

SPIN CURRENT MAGNETIZATION ROTATIONAL ELEMENT, SPIN CURRENT MAGNETI...

NON-VOLATILE NANOMAGNETIC MATRIX MULTIPLIER-ACCUMULATOR

THRESHOLD VOLTAGE-MODULATED MEMORY DEVICE USING VARIABLE-CAPACITANC...

PRESCRIPTIVE ANALYTICS IN HIGHLY COLLINEAR RESPONSE SPACE

MEMORY DEVICE AND MEMORY SYSTEM

ELECTRONIC SYSTEM WITH NON-VOLATILE WRITING BY ELECTRICAL CONTROL A...

MRAM REFERENCE CURRENT

SEMICONDUCTOR STORAGE APPARATUS