2944975

Information

• Patent Grant
• 2944975

• References
• Source

• Patent Number

  2,944,975

• Date Filed

  Not available

• Date Issued

  Tuesday, July 12, 1960
  64 years ago

• CPC

  • C30B29/40 - AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
  • C30B11/00 - Single-crystal growth by normal freezing or freezing under temperature gradient
  • Y10S117/907 - Refluxing atmosphere
  • Y10S148/065 - Gp III-V generic compounds-processing
  • Y10S148/107 - Melt
  • Y10S420/903 - Semiconductive
  • Y10S438/93 - Ternary or quaternary semiconductor comprised of elements from three different groups
  • Y10S438/971 - Stoichiometric control of host substrate composition

• US Classifications

  • 117 - Single-crystal, oriented-crystal, and epitaxy growth processes
  • 023 - Chemistry: physical processes
  • 075 - Specialized metallurgical processes, compositions for use therein, consolidated metal powder compositions, and loose metal particulate mixtures
  • 136 - Batteries: thermoelectric and photoelectric
  • 148 - Metal treatment
  • 252 - Compositions
  • 420 - Alloys or metallic compositions
  • 423 - Chemistry of inorganic compounds
  • 438 - Semiconductor device manufacturing: process