3102828

Information

• Patent Grant
• 3102828

• References
• Source

• Patent Number

  3,102,828

• Date Filed

  Not available

• Date Issued

  Tuesday, September 3, 1963
  61 years ago

• CPC

  • H01L21/185 - Joining of semiconductor bodies for junction formation
  • C30B11/06 - at least one but not all components of the crystal composition being added
  • C30B19/10 - Controlling or regulating
  • H01L21/00 - Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
  • Y10S148/059 - Germanium on silicon or Ge-Si on III-V
  • Y10S148/067 - Graded energy gap
  • Y10S148/074 - Horizontal melt solidification
  • Y10S438/936 - Graded energy gap

• US Classifications

  • 117 - Single-crystal, oriented-crystal, and epitaxy growth processes
  • 148 - Metal treatment
  • 204 - Chemistry: electrical and wave energy
  • 257 - Active solid-state devices
  • 438 - Semiconductor device manufacturing: process