3179542

Information

• Patent Grant
• 3179542

• References
• Source

• Patent Number

  3,179,542

• Date Filed

  Not available

• Date Issued

  Tuesday, April 20, 1965
  59 years ago

• CPC

  • H01L29/06 - characterised by their shape characterised by the shapes, relative sizes, or dispositions of the semiconductor regions; characterised by the concentration or distribution of impurities within semiconductor regions
  • H01L21/00 - Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
  • H01L21/24 - Alloying of impurity materials
  • H01L21/263 - with high-energy radiation
  • H01L21/302 - to change their surface-physical characteristics or shape
  • H01L21/70 - Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof Manufacture of integrated circuit devices or of parts thereof
  • H01L27/04 - the substrate being a semiconductor body
  • H01L29/88 - Tunnel-effect diodes
  • Y10S148/02 - Contacts, special
  • Y10S148/071 - Heating, selective
  • Y10S148/134 - Remelt

• US Classifications

  • 438 - Semiconductor device manufacturing: process
  • 148 - Metal treatment