3205101

Information

• Patent Grant
• 3205101

• References
• Source

• Patent Number

  3,205,101

• Date Filed

  Not available

• Date Issued

  Tuesday, September 7, 1965
  59 years ago

• CPC

  • H01L33/34 - containing only elements of group IV of the periodic system
  • C30B13/02 - Zone-melting with a solvent
  • C30B19/02 - using molten solvents
  • C30B29/36 - Carbides
  • H01S5/30 - Structure or shape of the active region Materials used for the active region
  • H01S5/32 - comprising PN junctions
  • Y10S148/107 - Melt
  • Y10S148/166 - Traveling solvent method
  • Y10S438/931 - Silicon carbide semiconductor

• US Classifications

  • 117 - Single-crystal, oriented-crystal, and epitaxy growth processes
  • 148 - Metal treatment
  • 252 - Compositions
  • 423 - Chemistry of inorganic compounds
  • 438 - Semiconductor device manufacturing: process