3342551

Information

• Patent Grant
• 3342551

• References
• Source

• Patent Number

  3,342,551

• Date Filed

  Not available

• Date Issued

  Tuesday, September 19, 1967
  57 years ago

• CPC

  • C30B25/02 - Epitaxial-layer growth
  • B22F9/30 - with decomposition of metal compounds
  • C01B19/007 - Tellurides or selenides of metals
  • C01B25/06 - Hydrogen phosphides
  • C01G30/008 - Sulfides
  • C22C1/007 - Preparing arsenides or antimonides, especially of the III-VI-compound type
  • C30B29/40 - AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
  • H01L21/00 - Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
  • C01P2002/70 - defined by measured X-ray, neutron or electron diffraction data
  • C01P2006/60 - Optical properties
  • Y10S148/056 - Gallium arsenide
  • Y10S148/065 - Gp III-V generic compounds-processing
  • Y10S420/903 - Semiconductive

• US Classifications

  • 420 - Alloys or metallic compositions
  • 148 - Metal treatment
  • 252 - Compositions
  • 257 - Active solid-state devices
  • 422 - Chemical apparatus and process disinfecting, deodorizing, preserving, or sterilizing
  • 423 - Chemistry of inorganic compounds