3351502

Information

• Patent Grant
• 3351502

• References
• Source

• Patent Number

  3,351,502

• Date Filed

  Not available

• Date Issued

  Tuesday, November 7, 1967
  57 years ago

• CPC

  • H01L31/0735 - comprising only AIIIBV compound semiconductors
  • C30B19/00 - Liquid-phase epitaxial-layer growth
  • H01L21/185 - Joining of semiconductor bodies for junction formation
  • H01L29/00 - Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier
  • H01L31/074 - comprising a heterojunction with an element of the fourth group of the Periodic System
  • Y02E10/544 - Solar cells from Group III-V materials
  • Y10S148/067 - Graded energy gap
  • Y10S148/107 - Melt
  • Y10S148/115 - Orientation
  • Y10S148/166 - Traveling solvent method

• US Classifications

  • 438 - Semiconductor device manufacturing: process
  • 117 - Single-crystal, oriented-crystal, and epitaxy growth processes
  • 148 - Metal treatment
  • 257 - Active solid-state devices