3371051

Information

• Patent Grant
• 3371051

• References
• Source

• Patent Number

  3,371,051

• Date Filed

  Not available

• Date Issued

  Tuesday, February 27, 1968
  56 years ago

• CPC

  • H01C7/04 - having negative temperature coefficient
  • G05F1/63 - using variable impedances in series with the load as final control devices
  • H01L21/00 - Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
  • Y10S148/041 - Doping control in crystal growth
  • Y10S148/056 - Gallium arsenide
  • Y10S148/107 - Melt
  • Y10S438/925 - Fluid growth doping control

• US Classifications

  • 117 - Single-crystal, oriented-crystal, and epitaxy growth processes
  • 148 - Metal treatment
  • 252 - Compositions
  • 438 - Semiconductor device manufacturing: process