3409481

Information

• Patent Grant
• 3409481

• References
• Source

• Patent Number

  3,409,481

• Date Filed

  Not available

• Date Issued

  Tuesday, November 5, 1968
  56 years ago

• CPC

  • C30B29/06 - Silicon
  • C30B25/02 - Epitaxial-layer growth
  • H01L21/00 - Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
  • H01L21/3065 - Plasma etching Reactive-ion etching
  • Y10S117/913 - Graphoepitaxy or surface modification to enhance epitaxy
  • Y10S148/016 - Catalyst
  • Y10S148/051 - Etching
  • Y10S148/052 - Face to face deposition
  • Y10S148/054 - Flat sheets-substrates
  • Y10S257/912 - Charge transfer device using both electron and hole signal carriers

• US Classifications

  • 117 - Single-crystal, oriented-crystal, and epitaxy growth processes
  • 148 - Metal treatment
  • 257 - Active solid-state devices