3472689

Information

• Patent Grant
• 3472689

• References
• Source

• Patent Number

  3,472,689

• Date Filed

  Not available

• Date Issued

  Tuesday, October 14, 1969
  55 years ago

• CPC

  • H01L21/00 - Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
  • C23C16/345 - Silicon nitride
  • H01L21/3185 - of siliconnitrides
  • H01L23/29 - characterised by the material
  • H01L2924/0002 - Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
  • Y10S148/043 - Dual dielectric
  • Y10S148/051 - Etching
  • Y10S148/053 - Field effect transistors fets
  • Y10S148/113 - Nitrides of boron or aluminum or gallium
  • Y10S148/114 - Nitrides of silicon
  • Y10S148/125 - Polycrystalline passivation

• US Classifications

  • 438 - Semiconductor device manufacturing: process
  • 148 - Metal treatment
  • 257 - Active solid-state devices
  • 427 - Coating processes