3473974

Information

• Patent Grant
• 3473974

• References
• Source

• Patent Number

  3,473,974

• Date Filed

  Not available

• Date Issued

  Tuesday, October 21, 1969
  55 years ago

• CPC

  • C30B23/02 - Epitaxial-layer growth
  • Y10S117/903 - Dendrite or web or cage technique
  • Y10S117/906 - Special atmosphere other than vacuum or inert
  • Y10S148/016 - Catalyst
  • Y10S148/054 - Flat sheets-substrates
  • Y10S148/115 - Orientation
  • Y10S148/148 - Silicon carbide
  • Y10S252/951 - for vapor transport
  • Y10S438/903 - Catalyst aided deposition
  • Y10S438/925 - Fluid growth doping control

• US Classifications

  • 117 - Single-crystal, oriented-crystal, and epitaxy growth processes
  • 023 - Chemistry: physical processes
  • 148 - Metal treatment
  • 252 - Compositions
  • 427 - Coating processes
  • 438 - Semiconductor device manufacturing: process