3488157

Information

• Patent Grant
• 3488157

• References
• Source

• Patent Number

  3,488,157

• Date Filed

  Not available

• Date Issued

  Tuesday, January 6, 1970
  55 years ago

• CPC

  • C30B15/20 - Controlling or regulating
  • C30B13/00 - Single-crystal growth by zone-melting Refining by zone-melting
  • C30B13/12 - in the gaseous or vapour state
  • C30B15/00 - Single-crystal growth by pulling from a melt
  • C30B29/40 - AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
  • Y10S117/907 - Refluxing atmosphere
  • Y10S148/041 - Doping control in crystal growth
  • Y10T117/1016 - with means for treating single-crystal [e.g., heat treating]
  • Y10T117/1032 - Seed pulling

• US Classifications

  • 117 - Single-crystal, oriented-crystal, and epitaxy growth processes
  • 148 - Metal treatment
  • 422 - Chemical apparatus and process disinfecting, deodorizing, preserving, or sterilizing