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3518511
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Information
Patent Grant
3518511
References
Source
Patent Number
3,518,511
Date Filed
Not available
Date Issued
Tuesday, June 30, 1970
53 years ago
CPC
H01L29/78 - with field effect produced by an insulated gate
H01L21/00 - Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
H01L21/24 - Alloying of impurity materials
H01L21/283 - Deposition of conductive or insulating materials for electrodes conducting electric current
H01L21/34 - the devices having semiconductor bodies not provided for in groups H01L21/0405, H01L21/0445 , H01L21/06, H01L21/16 and H01L21/18 with or without impurities
H01L21/479 - Application of electric currents or fields
H01L29/00 - Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier
H01L29/22 - including, apart from doping materials or other impurities, only AIIBVI compounds
H01L29/227 - further characterised by the doping material
H01L29/786 - Thin film transistors
Y10S148/064 - Gp II-VI compounds
US Classifications
257 - Active solid-state devices
148 - Metal treatment
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