3546032

Information

• Patent Grant
• 3546032

• References
• Source

• Patent Number

  3,546,032

• Date Filed

  Not available

• Date Issued

  Tuesday, December 8, 1970
  53 years ago

• CPC

  • C30B19/02 - using molten solvents
  • C30B9/00 - Single-crystal growth from melt solutions using molten solvents
  • C30B9/02 - by evaporation of the molten solvent
  • C30B19/04 - the solvent being a component of the crystal composition
  • C30B29/36 - Carbides
  • C30B29/44 - Gallium phosphide
  • H01L21/00 - Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
  • Y10S148/049 - Equivalence and options
  • Y10S148/071 - Heating, selective
  • Y10S148/107 - Melt
  • Y10S148/119 - Phosphides of gallium or indium
  • Y10S148/148 - Silicon carbide
  • Y10S148/166 - Traveling solvent method
  • Y10S252/951 - for vapor transport

• US Classifications

  • 117 - Single-crystal, oriented-crystal, and epitaxy growth processes
  • 148 - Metal treatment
  • 252 - Compositions