3549432

Information

• Patent Grant
• 3549432

• References
• Source

• Patent Number

  3,549,432

• Date Filed

  Not available

• Date Issued

  Tuesday, December 22, 1970
  54 years ago

• CPC

  • H01L21/00 - Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
  • H01L21/82 - to produce devices
  • H01L23/291 - Oxides or nitrides or carbides
  • H01L2924/0002 - Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
  • Y10S117/905 - Electron beam
  • Y10S148/008 - Bi-level fabrication
  • Y10S148/043 - Dual dielectric
  • Y10S148/048 - Energy beam assisted EPI growth
  • Y10S148/071 - Heating, selective
  • Y10S148/152 - Single crystal on amorphous substrate

• US Classifications

  • 438 - Semiconductor device manufacturing: process
  • 117 - Single-crystal, oriented-crystal, and epitaxy growth processes
  • 148 - Metal treatment
  • 257 - Active solid-state devices
  • 427 - Coating processes