3577285

Information

• Patent Grant
• 3577285

• References
• Source

• Patent Number

  3,577,285

• Date Filed

  Not available

• Date Issued

  Tuesday, May 4, 1971
  53 years ago

• CPC

  • C30B23/02 - Epitaxial-layer growth
  • C30B23/00 - Single-crystal growth by condensing evaporated or sublimed material
  • H01L21/00 - Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
  • Y10S148/079 - Inert carrier gas
  • Y10S148/148 - Silicon carbide
  • Y10S257/926 - Elongated lead extending axially through another elongated lead
  • Y10S438/925 - Fluid growth doping control
  • Y10S438/932 - Boron nitride semiconductor

• US Classifications

  • 117 - Single-crystal, oriented-crystal, and epitaxy growth processes
  • 148 - Metal treatment
  • 257 - Active solid-state devices
  • 423 - Chemistry of inorganic compounds
  • 427 - Coating processes
  • 438 - Semiconductor device manufacturing: process