3636617

Information

• Patent Grant
• 3636617

• References
• Source

• Patent Number

  3,636,617

• Date Filed

  Not available

• Date Issued

  Tuesday, January 25, 1972
  53 years ago

• CPC

  • H01L33/40 - Materials therefor
  • H01L21/22 - Diffusion of impurity materials
  • H01L27/00 - Devices consisting of a plurality of semiconductor or other solid state components formed in or on a common substrate
  • H01L33/00 - Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof Details thereof
  • H01L33/0062 - for devices with an active region comprising only III-V compounds
  • H01L33/30 - containing only elements of group III and group V of the periodic system
  • H01L2924/0002 - Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
  • Y10S148/043 - Dual dielectric
  • Y10S148/049 - Equivalence and options
  • Y10S148/056 - Gallium arsenide
  • Y10S148/062 - Gold diffusion
  • Y10S148/106 - Masks, special
  • Y10S148/145 - Shaped junctions

• US Classifications

  • 438 - Semiconductor device manufacturing: process
  • 148 - Metal treatment
  • 257 - Active solid-state devices