3697829

Information

• Patent Grant
• 3697829

• References
• Source

• Patent Number

  3,697,829

• Date Filed

  Not available

• Date Issued

  Tuesday, October 10, 1972
  52 years ago

• CPC

  • H01L29/0661 - specially adapted for altering the breakdown voltage by removing semiconductor material at, or in the neighbourhood of, a reverse biased junction
  • H01L29/00 - Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier
  • Y10S148/01 - Bipolar transistors-ion implantation
  • Y10S148/054 - Flat sheets-substrates

• US Classifications

  • 257 - Active solid-state devices
  • 148 - Metal treatment