specially adapted for altering the breakdown voltage by removing semiconductor material at, or in the neighbourhood of, a reverse biased junction

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H01L29/0661

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier

Current Industry

H01L29/0661specially adapted for altering the breakdown voltage by removing semiconductor material at, or in the neighbourhood of, a reverse biased junction

Industries

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Patents Grantslast 30 patents

Information Patent Grant
Nanosheet device with dipole dielectric layer and methods of formin...
- Patent number 12,166,100
- Issue date Dec 10, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chung-Wei Hsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor power device
- Patent number 12,094,929
- Issue date Sep 17, 2024
- SUZHOU ORIENTAL SEMICONDUCTOR CO., LTD.
- Yi Gong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having a plurality of III-V semiconductor layers
- Patent number 12,087,820
- Issue date Sep 10, 2024
- Taiwan Semiconductor Manufacturing Company Ltd.
- Yu-Syuan Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Wide band gap semiconductor device with surface insulating film
- Patent number 11,967,627
- Issue date Apr 23, 2024
- ROHM Co, Ltd.
- Yuki Nakano
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods and devices related to radio frequency devices
- Patent number 11,948,802
- Issue date Apr 2, 2024
- Infineon Technologies Dresden GmbH & Co. KG
- Hans Taddiken
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with voltage resistant structure
- Patent number 11,929,394
- Issue date Mar 12, 2024
- Rohm Co., Ltd.
- Yuki Nakano
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-aligned field plate mesa FPM SiC schottky barrier diode
- Patent number 11,888,037
- Issue date Jan 30, 2024
- HITACHI ENERGY LTD
- Andrei Mihaila
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Low voltage/power junction FET with all-around junction gate
- Patent number 11,869,983
- Issue date Jan 9, 2024
- International Business Machines Corporation
- Alexander Reznicek
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Manufacturing method of a semiconductor device with efficient edge...
- Patent number 11,854,809
- Issue date Dec 26, 2023
- STMicroelectronics S.r.l.
- Edoardo Zanetti
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with a passivation layer and method for produc...
- Patent number 11,854,926
- Issue date Dec 26, 2023
- Infineon Technologies AG
- Jens Peter Konrath
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nanosheet device with dipole dielectric layer and methods of formin...
- Patent number 11,830,924
- Issue date Nov 28, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chung-Wei Hsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for producing gallium oxide Schottky barrier diode with nega...
- Patent number 11,757,048
- Issue date Sep 12, 2023
- THE 13TH RESEARCH INSTITUTE OF CHINA ELECTRONICS TECHNOLOGY GROUP CORPORATION
- Yuangang Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 11,699,751
- Issue date Jul 11, 2023
- PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.
- Hidekazu Umeda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of manufacture for trench-gate insulated-gate bipolar trans...
- Patent number 11,670,706
- Issue date Jun 6, 2023
- SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
- Meng-Chia Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 11,631,741
- Issue date Apr 18, 2023
- Taiwan Semiconductor Manufacturing Company Ltd.
- Yu-Syuan Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Low-leakage regrown GaN p-n junctions for GaN power devices
- Patent number 11,626,483
- Issue date Apr 11, 2023
- Arizona Board of Regents on behalf of Arizona State University
- Yuji Zhao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Thyristor, triac and transient-voltage-suppression diode manufacturing
- Patent number 11,610,988
- Issue date Mar 21, 2023
- STMicroelectronics (Tours) SAS
- Patrick Hauttecoeur
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Manufacturing method of a semiconductor device with efficient edge...
- Patent number 11,545,362
- Issue date Jan 3, 2023
- STMicroelectronics S.r.l.
- Edoardo Zanetti
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with surface insulating film
- Patent number 11,417,743
- Issue date Aug 16, 2022
- Rohm Co., Ltd.
- Yuki Nakano
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of manufacturing a semiconductor de...
- Patent number 11,387,318
- Issue date Jul 12, 2022
- Fuji Electric Co., Ltd.
- Isamu Sugai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nanosheet device with dipole dielectric layer and methods of formin...
- Patent number 11,374,105
- Issue date Jun 28, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chung-Wei Hsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 11,309,310
- Issue date Apr 19, 2022
- Rohm Co., Ltd.
- Kohei Shinsho
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 11,282,919
- Issue date Mar 22, 2022
- National Institute of Advanced Industrial Science and Technology
- Ryoji Kosugi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Schottky barrier diode
- Patent number 11,264,466
- Issue date Mar 1, 2022
- Tamura Corporation
- Masaru Takizawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with voltage resistant structure
- Patent number 11,257,901
- Issue date Feb 22, 2022
- Rohm Co., Ltd.
- Yuki Nakano
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-aligned and robust IGBT devices
- Patent number 11,239,352
- Issue date Feb 1, 2022
- iPower Semiconductor
- Hamza Yilmaz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-aligned and robust IGBT devices
- Patent number 11,233,141
- Issue date Jan 25, 2022
- iPower Semiconductor
- Hamza Yilmaz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductive device with mesa structure and method of fabricating...
- Patent number 11,177,377
- Issue date Nov 16, 2021
- United Microelectronics Corp.
- Chun-Ming Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with a passivation layer and method for produc...
- Patent number 11,158,557
- Issue date Oct 26, 2021
- Infineon Technologies AG
- Jens Peter Konrath
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Deep trench isolation and substrate connection on SOI
- Patent number 11,127,622
- Issue date Sep 21, 2021
- NXP USA, INC.
- James Gordon Boyd
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
VERTICAL JUNCTION FIELD-EFFECT TRANSISTORS WITH SOURCE-DRAIN DIODE...
- Publication number 20240421151
- Publication date Dec 19, 2024
- Qorvo US, Inc.
- Zhongda Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NANOSHEET DEVICE WITH DIPOLE DIELECTRIC LAYER AND METHODS OF FORMIN...
- Publication number 20240387687
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Co., LTD
- Chung-Wei HSU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NON-CONDUCTING EDGE TERMINATION STRUCTURES FOR A SEMICONDUCTOR DEVI...
- Publication number 20240363683
- Publication date Oct 31, 2024
- IDEAL SEMICONDUCTOR DEVICES, INC.
- David Jauregui
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20240290874
- Publication date Aug 29, 2024
- Kabushiki Kaisha Toshiba
- Kazushi MAEDA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH VOLTAGE FIELD EFFECT TRANSISTORS WITH SUPERJUNCTIONS AND METHO...
- Publication number 20240250119
- Publication date Jul 25, 2024
- SANDISK TECHNOLOGIES LLC
- Masashi ISHIDA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
WIDE BAND GAP SEMICONDUCTOR DEVICE WITH SURFACE INSULATING FILM
- Publication number 20240234529
- Publication date Jul 11, 2024
- ROHM CO., LTD.
- Yuki Nakano
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MANUFACTURING METHOD OF A SEMICONDUCTOR DEVICE WITH EFFICIENT EDGE...
- Publication number 20240162040
- Publication date May 16, 2024
- STMicroelectronics S.r.l.
- Edoardo ZANETTI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES WITH ADDITIONAL MESA STRUCTURES FOR REDUCED S...
- Publication number 20240145537
- Publication date May 2, 2024
- Wolfspeed, Inc.
- Rahul R. Potera
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH VOLTAGE RESISTANT STRUCTURE
- Publication number 20240128315
- Publication date Apr 18, 2024
- ROHM CO., LTD.
- Yuki Nakano
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE AND PREPARATION METHOD THEREOF
- Publication number 20240120374
- Publication date Apr 11, 2024
- ENKRIS SEMICONDUCTOR, INC.
- Kai CHENG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON CARBIDE SEMICONDUCTOR DEVICE
- Publication number 20240105858
- Publication date Mar 28, 2024
- Fuji Electric Co., Ltd.
- Yuichi HASHIZUME
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREFOR
- Publication number 20240072113
- Publication date Feb 29, 2024
- NEXPERIA B.V.
- Stefan Berglund
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE AND METHOD FOR MANUFACTURING SEMICONDUCTOR...
- Publication number 20240063260
- Publication date Feb 22, 2024
- ENKRIS SEMICONDUCTOR, INC.
- Kai CHENG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH A SIDE SURFACE HAVING DIFFERENT PARTIAL R...
- Publication number 20240021672
- Publication date Jan 18, 2024
- Hitachi Energy Switzerland AG
- Paul COMMIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NANOSHEET DEVICE WITH DIPOLE DIELECTRIC LAYER AND METHODS OF FORMIN...
- Publication number 20230395691
- Publication date Dec 7, 2023
- Chung-Wei Hsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GALLIUM NITRIDE POWER TRANSISTOR
- Publication number 20230335597
- Publication date Oct 19, 2023
- Huawei Technologies Co., Ltd
- Gilberto Curatola
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20230290876
- Publication date Sep 14, 2023
- Kabushiki Kaisha Toshiba
- Mitsutoshi NAKAMURA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20230253455
- Publication date Aug 10, 2023
- Taiwan Semiconductor Manufacturing company Ltd.
- YU-SYUAN LIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LOW RESISTANCE CONTACT FEATURE
- Publication number 20230207653
- Publication date Jun 29, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Szu-Wei Tseng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THYRISTOR, TRIAC AND TRANSIENT-VOLTAGE-SUPPRESSION DIODE MANUFACTURING
- Publication number 20230197835
- Publication date Jun 22, 2023
- STMicroelectronics (Tours) SAS
- Patrick HAUTTECOEUR
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR POWER DEVICE
- Publication number 20230154981
- Publication date May 18, 2023
- SUZHOU ORIENTAL SEMICONDUCTOR CO., LTD
- Yi GONG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20230123210
- Publication date Apr 20, 2023
- FLOSFIA INC.
- Takayoshi OSHIMA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MANUFACTURING METHOD OF A SEMICONDUCTOR DEVICE WITH EFFICIENT EDGE...
- Publication number 20230099610
- Publication date Mar 30, 2023
- STMicroelectronics S.r.l.
- Edoardo ZANETTI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
High-Breakdown Voltage, Low RDSON Electrical Component with Dissimi...
- Publication number 20230067511
- Publication date Mar 2, 2023
- IceMos Technology Limited
- Samuel J. Anderson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
- Publication number 20230057216
- Publication date Feb 23, 2023
- RENESAS ELECTRONICS CORPORATION
- Makoto KOSHIMIZU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20230041169
- Publication date Feb 9, 2023
- Ingmar Neumann
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20230036039
- Publication date Feb 2, 2023
- Fuji Electric Co., Ltd.
- Toshiyuki MATSUI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20220352332
- Publication date Nov 3, 2022
- ROHM CO., LTD.
- Yuki Nakano
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE TRENCH TERMINATION STRUCTURE
- Publication number 20220336656
- Publication date Oct 20, 2022
- NEXPERIA B.V.
- Reza Behtash
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Nanosheet Device With Dipole Dielectric Layer And Methods Of Formin...
- Publication number 20220328652
- Publication date Oct 13, 2022
- Taiwan Semiconductor Manufacturing Co., LTD
- Chung-Wei HSU
- H01 - BASIC ELECTRIC ELEMENTS

specially adapted for altering the breakdown voltage by removing semiconductor material at, or in the neighbourhood of, a reverse biased junction

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Nanosheet device with dipole dielectric layer and methods of formin...

Semiconductor power device

Semiconductor device having a plurality of III-V semiconductor layers

Wide band gap semiconductor device with surface insulating film

Methods and devices related to radio frequency devices

Semiconductor device with voltage resistant structure

Self-aligned field plate mesa FPM SiC schottky barrier diode

Low voltage/power junction FET with all-around junction gate

Manufacturing method of a semiconductor device with efficient edge...

Semiconductor device with a passivation layer and method for produc...

Nanosheet device with dipole dielectric layer and methods of formin...

Method for producing gallium oxide Schottky barrier diode with nega...

Semiconductor device

Methods of manufacture for trench-gate insulated-gate bipolar trans...

Semiconductor device

Low-leakage regrown GaN p-n junctions for GaN power devices

Thyristor, triac and transient-voltage-suppression diode manufacturing

Manufacturing method of a semiconductor device with efficient edge...

Semiconductor device with surface insulating film

Semiconductor device and method of manufacturing a semiconductor de...

Nanosheet device with dipole dielectric layer and methods of formin...

Semiconductor device

Semiconductor device

Schottky barrier diode

Semiconductor device with voltage resistant structure

Self-aligned and robust IGBT devices

Self-aligned and robust IGBT devices

Semiconductive device with mesa structure and method of fabricating...

Semiconductor device with a passivation layer and method for produc...

Deep trench isolation and substrate connection on SOI

Patents Applicationslast 30 patents

VERTICAL JUNCTION FIELD-EFFECT TRANSISTORS WITH SOURCE-DRAIN DIODE...

NANOSHEET DEVICE WITH DIPOLE DIELECTRIC LAYER AND METHODS OF FORMIN...

NON-CONDUCTING EDGE TERMINATION STRUCTURES FOR A SEMICONDUCTOR DEVI...

SEMICONDUCTOR DEVICE

HIGH VOLTAGE FIELD EFFECT TRANSISTORS WITH SUPERJUNCTIONS AND METHO...

WIDE BAND GAP SEMICONDUCTOR DEVICE WITH SURFACE INSULATING FILM

MANUFACTURING METHOD OF A SEMICONDUCTOR DEVICE WITH EFFICIENT EDGE...

SEMICONDUCTOR DEVICES WITH ADDITIONAL MESA STRUCTURES FOR REDUCED S...

SEMICONDUCTOR DEVICE WITH VOLTAGE RESISTANT STRUCTURE

SEMICONDUCTOR STRUCTURE AND PREPARATION METHOD THEREOF

SILICON CARBIDE SEMICONDUCTOR DEVICE

VERTICAL SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREFOR

SEMICONDUCTOR STRUCTURE AND METHOD FOR MANUFACTURING SEMICONDUCTOR...

SEMICONDUCTOR DEVICE WITH A SIDE SURFACE HAVING DIFFERENT PARTIAL R...

NANOSHEET DEVICE WITH DIPOLE DIELECTRIC LAYER AND METHODS OF FORMIN...

GALLIUM NITRIDE POWER TRANSISTOR

SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE

LOW RESISTANCE CONTACT FEATURE

THYRISTOR, TRIAC AND TRANSIENT-VOLTAGE-SUPPRESSION DIODE MANUFACTURING

SEMICONDUCTOR POWER DEVICE

SEMICONDUCTOR DEVICE

MANUFACTURING METHOD OF A SEMICONDUCTOR DEVICE WITH EFFICIENT EDGE...

High-Breakdown Voltage, Low RDSON Electrical Component with Dissimi...

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE TRENCH TERMINATION STRUCTURE

Nanosheet Device With Dipole Dielectric Layer And Methods Of Formin...