3756862

Information

• Patent Grant
• 3756862

• References
• Source

• Patent Number

  3,756,862

• Date Filed

  Not available

• Date Issued

  Tuesday, September 4, 1973
  51 years ago

• CPC

  • H01L27/0658 - Vertical bipolar transistor in combination with resistors or capacitors
  • H01J37/3171 - for ion implantation
  • H01L21/265 - producing ion implantation
  • H01L21/26506 - in group IV semiconductors
  • H01L21/761 - PN junctions
  • H01L21/82285 - Complementary vertical transistors
  • H01L27/00 - Devices consisting of a plurality of semiconductor or other solid state components formed in or on a common substrate
  • Y10S148/037 - Diffusion-deposition
  • Y10S148/085 - Isolated-integrated
  • Y10S148/128 - Proton bombardment of silicon
  • Y10S148/145 - Shaped junctions
  • Y10S438/912 - Displacing pn junction

• US Classifications

  • 438 - Semiconductor device manufacturing: process
  • 148 - Metal treatment
  • 257 - Active solid-state devices