3783009

Information

• Patent Grant
• 3783009

• References
• Source

• Patent Number

  3,783,009

• Date Filed

  Not available

• Date Issued

  Tuesday, January 1, 1974
  52 years ago

• CPC

  • H01L21/0242 - Crystalline insulating materials
  • H01L21/00 - Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
  • H01L21/0245 - Silicon, silicon germanium, germanium
  • H01L21/02532 - Silicon, silicon germanium, germanium
  • H01L21/02617 - Deposition types
  • Y10S148/006 - Apparatus
  • Y10S148/007 - Autodoping
  • Y10S148/025 - Deposition multi-step
  • Y10S148/049 - Equivalence and options
  • Y10S148/052 - Face to face deposition
  • Y10S148/072 - Heterojunctions
  • Y10S148/15 - Silicon on sapphire SOS
  • Y10S428/938 - Vapor deposition or gas diffusion
  • Y10T428/12528 - Semiconductor component
  • Y10T428/12611 - Oxide-containing component
  • Y10T428/12674 - Ge- or Si-base component

• US Classifications

  • 428 - Stock material or miscellaneous articles
  • 117 - Single-crystal, oriented-crystal, and epitaxy growth processes
  • 148 - Metal treatment
  • 257 - Active solid-state devices
  • 427 - Coating processes