Autodoping

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CPC
Y10S148/007

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YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS Y10USPC classification Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS Y10S148/00Metal treatment

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Y10S148/007Autodoping

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Patents Grantslast 30 patents

Information Patent Grant
Bifacial solar cell
- Patent number 5,665,175
- Issue date Sep 9, 1997
- Yakov Safir
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making diffused doped areas for semiconductor components
- Patent number 5,461,002
- Issue date Oct 24, 1995
- Yakov Safir
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing a heterostructure transistor having a germ...
- Patent number 5,047,365
- Issue date Sep 10, 1991
- NEC Corporation
- Masafumi Kawanaka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Two step vapor-phase epitaxial growth process for control of autodo...
- Patent number 4,894,349
- Issue date Jan 16, 1990
- Kabushiki Kaisha Toshiba
- Yoshihiko Saito
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming thin epitaxial layers using multistep growth for...
- Patent number 4,859,626
- Issue date Aug 22, 1989
- Texas Instruments Incorporated
- Rick L. Wise
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a semiconductor laser with autodoping control
- Patent number 4,855,250
- Issue date Aug 8, 1989
- Kabushiki Kaisha Toshiba
- Motoyuki Yamamoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Back sealing of silicon wafers
- Patent number 4,687,682
- Issue date Aug 18, 1987
- American Telephone and Telegraph Company, AT&T Technologies, Inc.
- Jeffrey T. Koze
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Furnace contamination
- Patent number 4,668,330
- Issue date May 26, 1987
- Monsanto Company
- Paul F. Golden
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for prevention of autodoping of epitaxial layers
- Patent number 4,662,956
- Issue date May 5, 1987
- Motorola, Inc.
- Scott S. Roth
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for minimizing autodoping during epitaxial deposition utiliz...
- Patent number 4,571,275
- Issue date Feb 18, 1986
- International Business Machines Corporation
- Tor W. Moksvold
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a semiconductor device by means of a molecu...
- Patent number 4,554,030
- Issue date Nov 19, 1985
- Jan Haisma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Producing high efficiency gallium arsenide IMPATT diodes utilizing...
- Patent number 4,106,959
- Issue date Aug 15, 1978
- Bell Telephone Laboratories, Incorporated
- James Vincent DiLorenzo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vapor epitaxial method for depositing gallium arsenide phosphide on...
- Patent number 4,000,020
- Issue date Dec 28, 1976
- Texas Instruments Incorporated
- William Wesley Gartman
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High efficiency gallium arsenide impatt diodes
- Patent number 3,986,192
- Issue date Oct 12, 1976
- Bell Telephone Laboratories, Incorporated
- James Vincent DiLorenzo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Compensation of autodoping in the manufacture of integrated circuits
- Patent number 3,982,974
- Issue date Sep 28, 1976
- International Business Machines Corporation
- William A. Edel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
MBE growth: gettering contaminants and fabricating heterostructure...
- Patent number 3,974,002
- Issue date Aug 10, 1976
- Bell Telephone Laboratories, Incorporated
- Horace Craig Casey
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Lateral bipolar transistor for integrated circuits and method for f...
- Patent number 3,967,307
- Issue date Jun 29, 1976
- Signetics Corporation
- Richard S. Muller
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming semiconductor layers by vapor growth
- Patent number 3,956,037
- Issue date May 11, 1976
- Mitsubishi Denki Kabushiki Kaisha
- Takashi Ishii
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method of ion implantation through an electrically insulative material
- Patent number 3,945,856
- Issue date Mar 23, 1976
- IBM Corporation
- Wilfried G. Koenig
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of growing thick expitaxial layers of silicon
- Patent number 3,945,864
- Issue date Mar 23, 1976
- RCA Corporation
- Norman Goldsmith
- C30 - CRYSTAL GROWTH
Information Patent Grant
Triac with gold diffused boundary
- Patent number 3,943,013
- Issue date Mar 9, 1976
- General Electric Company
- Richard W. Kennedy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Accurate control during vapor phase epitaxy
- Patent number 3,930,908
- Issue date Jan 6, 1976
- RCA Corporation
- Stuart Talbot Jolly
- C30 - CRYSTAL GROWTH
Information Patent Grant
3929526
- Patent number 3,929,526
- Issue date Dec 30, 1975
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
3929528
- Patent number 3,929,528
- Issue date Dec 30, 1975
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
3928091
- Patent number 3,928,091
- Issue date Dec 23, 1975
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
3928092
- Patent number 3,928,092
- Issue date Dec 23, 1975
- C30 - CRYSTAL GROWTH
Information Patent Grant
3915765
- Patent number 3,915,765
- Issue date Oct 28, 1975
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
3916431
- Patent number 3,916,431
- Issue date Oct 28, 1975
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
3914856
- Patent number 3,914,856
- Issue date Oct 28, 1975
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
3909304
- Patent number 3,909,304
- Issue date Sep 30, 1975
- H01 - BASIC ELECTRIC ELEMENTS

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Bifacial solar cell

Method of making diffused doped areas for semiconductor components

Method for manufacturing a heterostructure transistor having a germ...

Two step vapor-phase epitaxial growth process for control of autodo...

Method of forming thin epitaxial layers using multistep growth for...

Method of manufacturing a semiconductor laser with autodoping control

Back sealing of silicon wafers

Furnace contamination

Method for prevention of autodoping of epitaxial layers

Method for minimizing autodoping during epitaxial deposition utiliz...

Method of manufacturing a semiconductor device by means of a molecu...

Producing high efficiency gallium arsenide IMPATT diodes utilizing...

Vapor epitaxial method for depositing gallium arsenide phosphide on...

High efficiency gallium arsenide impatt diodes

Compensation of autodoping in the manufacture of integrated circuits

MBE growth: gettering contaminants and fabricating heterostructure...

Lateral bipolar transistor for integrated circuits and method for f...

Method of forming semiconductor layers by vapor growth

Method of ion implantation through an electrically insulative material

Method of growing thick expitaxial layers of silicon

Triac with gold diffused boundary

Accurate control during vapor phase epitaxy

3929526

3929528

3928091

3928092

3915765

3916431

3914856

3909304

Patents Applicationslast 30 patents