3921195

Information

• Patent Grant
• 3921195

• References
• Source

• Patent Number

  3,921,195

• Date Filed

  Not available

• Date Issued

  Tuesday, November 18, 1975
  49 years ago

• CPC

  • H01L29/76875 - Two-Phase CCD
  • G11C19/282 - with charge storage in a depletion layer
  • G11C27/04 - Shift registers
  • H01L27/1057 - comprising charge coupled devices [CCD] or charge injection devices [CID]
  • H01L29/42396 - for charge coupled devices
  • H01L29/495 - the conductor material next to the insulator being a simple metal
  • H01L29/76883 - Three-Phase CCD
  • H01L29/76891 - Four-Phase CCD
  • Y10S148/02 - Contacts, special
  • Y10S148/049 - Equivalence and options
  • Y10S148/053 - Field effect transistors fets
  • Y10S148/122 - Polycrystalline

• US Classifications

  • 257 - Active solid-state devices
  • 148 - Metal treatment