the conductor material next to the insulator being a simple metal

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier

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H01L29/495the conductor material next to the insulator being a simple metal

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Patents Grantslast 30 patents

Information Patent Grant
Microelectronic devices including conductive structures
- Patent number 12,171,101
- Issue date Dec 17, 2024
- Micron Technology, Inc.
- Daniel Billingsley
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with fin transistors and manufacturing method...
- Patent number 12,170,282
- Issue date Dec 17, 2024
- Sony Corporation
- Koichi Matsumoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuits with recessed gate electrodes
- Patent number 12,165,928
- Issue date Dec 10, 2024
- Intel Corporation
- Srijit Mukherjee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with composite word line structure and method...
- Patent number 12,160,988
- Issue date Dec 3, 2024
- NANYA TECHNOLOGY CORPORATION
- Chun-Chi Lai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating metal gate devices and resulting structures
- Patent number 12,159,916
- Issue date Dec 3, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Po-Chi Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with semiconductor mesas between adjacent gate...
- Patent number 12,159,933
- Issue date Dec 3, 2024
- Infineon Technologies Austria AG
- Anita Brazzale
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and manufacturing method thereof
- Patent number 12,154,902
- Issue date Nov 26, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Wei-Yuan Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FinFET device with high-K metal gate stack
- Patent number 12,142,685
- Issue date Nov 12, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Kuo-Cheng Chiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit with doped low-k sidewall spacers for gate stacks
- Patent number 12,136,658
- Issue date Nov 5, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Yen-Ting Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for forming recesses in source/drain regions and devices fo...
- Patent number 12,132,089
- Issue date Oct 29, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Yu-Lien Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Display device, method of manufacturing the same, and electronic ap...
- Patent number 12,133,419
- Issue date Oct 29, 2024
- Sony Group Corporation
- Seiichiro Jinta
- G09 - EDUCATION CRYPTOGRAPHY DISPLAY ADVERTISING SEALS
Information Patent Grant
Strained gate semiconductor device having an interlayer dielectric...
- Patent number 12,100,767
- Issue date Sep 24, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Cheng-Ta Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuits and manufacturing methods thereof
- Patent number 12,094,880
- Issue date Sep 17, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Ali Keshavarzi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of manufacture
- Patent number 12,087,637
- Issue date Sep 10, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chung-Chiang Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory chip structure having GAA transistors with different thresho...
- Patent number 12,057,487
- Issue date Aug 6, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Jhon Jhy Liaw
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of forming semiconductor devices including gate barrier layers
- Patent number 12,051,721
- Issue date Jul 30, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Hsin-Yi Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices
- Patent number 12,046,650
- Issue date Jul 23, 2024
- Samsung Electronics Co., Ltd.
- Juyoun Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and preparation method thereof
- Patent number 12,040,376
- Issue date Jul 16, 2024
- CHANGXIN MEMORY TECHNOLOGIES, INC.
- ChihCheng Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fin-based device having an isolation gate interfacing with a source...
- Patent number 12,034,007
- Issue date Jul 9, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Jhon Jhy Liaw
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device including emitter regions and method of manufa...
- Patent number 12,034,065
- Issue date Jul 9, 2024
- Rohm Co., Ltd.
- Akihiro Hikasa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing semiconductor device
- Patent number 12,033,867
- Issue date Jul 9, 2024
- Semiconductor Energy Laboratory Co., Ltd.
- Shunpei Yamazaki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multi-threshold voltage devices and associated techniques and confi...
- Patent number 12,021,141
- Issue date Jun 25, 2024
- Sony Group Corporation
- Joseph M. Steigerwald
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Enhanced channel strain to reduce contact resistance in NMOS FET de...
- Patent number 12,021,082
- Issue date Jun 25, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Yu-Chang Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate-all-around field effect transistor having multiple threshold v...
- Patent number 12,015,069
- Issue date Jun 18, 2024
- International Business Machines Corporation
- Ruqiang Bao
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Assemblies which include ruthenium-containing conductive gates
- Patent number 11,996,456
- Issue date May 28, 2024
- Ramanathan Gandhi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating semiconductor devices including a fin field e...
- Patent number 11,978,775
- Issue date May 7, 2024
- Samsung Electronics Co., Ltd.
- Doohyun Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Partial metal grain size control to improve CMP loading effect
- Patent number 11,978,781
- Issue date May 7, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Anhao Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Wide band gap semiconductor device with surface insulating film
- Patent number 11,967,627
- Issue date Apr 23, 2024
- ROHM Co, Ltd.
- Yuki Nakano
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices with nanowires and methods for fabricating th...
- Patent number 11,967,595
- Issue date Apr 23, 2024
- Samsung Electronics Co., Ltd.
- Jae Jung Kim
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Structure for metal gate electrode and method of fabrication
- Patent number 11,961,891
- Issue date Apr 16, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Ru-Shang Hsiao
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
- Publication number 20240420967
- Publication date Dec 19, 2024
- Semiconductor Energy Laboratory Co., Ltd.
- Shunpei YAMAZAKI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD-EFFECT TRANSISTORS (FETS) EMPLOYING THERMAL EXPANSION OF WORK...
- Publication number 20240413219
- Publication date Dec 12, 2024
- QUALCOMM Incorporated
- Xia Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING SAME
- Publication number 20240405109
- Publication date Dec 5, 2024
- ROHM CO., LTD.
- Suguru HONDO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20240395811
- Publication date Nov 28, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Wei-Yuan LU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CONTACT INTEGRATION IN COMPLEMENTARY FIELD EFFECT TRANSISTOR (CFET)...
- Publication number 20240395879
- Publication date Nov 28, 2024
- Applied Materials, Inc.
- San-Kuei LIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FinFET Device With High-K Metal Gate Stack
- Publication number 20240387736
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Kuo-Cheng Chiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR GATE AND CONTACT FORMATION
- Publication number 20240387644
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Hsin-Han TSAI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FABRICATING METAL GATE DEVICES AND RESULTING STRUCTURES
- Publication number 20240387678
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Po-Chi Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME
- Publication number 20240387546
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing company Ltd.
- PO-YING CHANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE STRUCTURE AND METHODS OF FORMING THE SAME
- Publication number 20240379758
- Publication date Nov 14, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Wei-Yip LOH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Metal Contacts on Metal Gates and Methods Thereof
- Publication number 20240379378
- Publication date Nov 14, 2024
- Taiwan Semiconductor Manufacturing Co., LTD
- Pang-Sheng Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD AND STRUCTURE FOR METAL GATE BOUNDARY ISOLATION
- Publication number 20240379773
- Publication date Nov 14, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Shahaji B. MORE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURE
- Publication number 20240363424
- Publication date Oct 31, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chung-Chiang Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH COMPOSITE WORD LINE STRUCTURE AND METHOD...
- Publication number 20240365537
- Publication date Oct 31, 2024
- NANYA TECHNOLOGY CORPORATION
- Chun-Chi LAI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DUAL GATE STRUCTURE FOR MEMORY DEVICE
- Publication number 20240355929
- Publication date Oct 24, 2024
- Applied Materials, Inc.
- Arvind Kumar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Methods of Forming Semiconductor Devices Including Gate Barrier Layers
- Publication number 20240355880
- Publication date Oct 24, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Hsin-Yi Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUITS WITH RECESSED GATE ELECTRODES
- Publication number 20240347394
- Publication date Oct 17, 2024
- Intel Corporation
- Srijit MUKHERJEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES
- Publication number 20240339514
- Publication date Oct 10, 2024
- Samsung Electronics Co., Ltd.
- Juyoun Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTI-THRESHOLD VOLTAGE DEVICES AND ASSOCIATED TECHNIQUES AND CONFI...
- Publication number 20240322037
- Publication date Sep 26, 2024
- SONY GROUP CORPORATION
- Joseph M. Steigerwald
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELECTIVE SILICIDE FOR STACKED MULTI-GATE DEVICE
- Publication number 20240297228
- Publication date Sep 5, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Wei-Yip Loh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ETCHING COMPOSITION FOR SEMICONDUCTOR SUBSTRATE FOR MEMORY ELEMENT...
- Publication number 20240287385
- Publication date Aug 29, 2024
- Mitsubishi Gas Chemical Company, Inc.
- Toshiyuki OIE
- C09 - DYES PAINTS POLISHES NATURAL RESINS ADHESIVES MISCELLANEOUS COMPOSITION...
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
- Publication number 20240290826
- Publication date Aug 29, 2024
- SK HYNIX INC.
- Il Do KIM
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE AND FABRICATION METHOD THEREOF
- Publication number 20240274684
- Publication date Aug 15, 2024
- Changxin Memory Technologies, Inc.
- Guangsu Shao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE-ALL-AROUND FIELD-EFFECT TRANSISTOR DEVICE
- Publication number 20240250123
- Publication date Jul 25, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Kuo-Cheng Chiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FORMING METAL CONTACTS ON METAL GATES
- Publication number 20240250139
- Publication date Jul 25, 2024
- Taiwan Semiconductor Manufacturing Co., LTD
- Chao-Hsun Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME
- Publication number 20240250000
- Publication date Jul 25, 2024
- Samsung Electronics Co., Ltd.
- Jeonghyuk YIM
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
WIDE BAND GAP SEMICONDUCTOR DEVICE WITH SURFACE INSULATING FILM
- Publication number 20240234529
- Publication date Jul 11, 2024
- ROHM CO., LTD.
- Yuki Nakano
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METAL OXIDE SEMICONDUCTOR HAVING EPITAXIAL SOURCE DRAIN REGIONS AND...
- Publication number 20240204102
- Publication date Jun 20, 2024
- SONY GROUP CORPORATION
- Yasushi Tateshita
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE COMPRISING ALIGNMENT KEY
- Publication number 20240204068
- Publication date Jun 20, 2024
- Samsung Electronics Co., Ltd.
- HYUNGJOO NA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
- Publication number 20240178298
- Publication date May 30, 2024
- KIOXIA Corporation
- Takayuki BEPPU
- H01 - BASIC ELECTRIC ELEMENTS

the conductor material next to the insulator being a simple metal

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Microelectronic devices including conductive structures

Semiconductor device with fin transistors and manufacturing method...

Integrated circuits with recessed gate electrodes

Semiconductor device with composite word line structure and method...

Method for fabricating metal gate devices and resulting structures

Semiconductor device with semiconductor mesas between adjacent gate...

Semiconductor device and manufacturing method thereof

FinFET device with high-K metal gate stack

Integrated circuit with doped low-k sidewall spacers for gate stacks

Methods for forming recesses in source/drain regions and devices fo...

Display device, method of manufacturing the same, and electronic ap...

Strained gate semiconductor device having an interlayer dielectric...

Integrated circuits and manufacturing methods thereof

Semiconductor device and method of manufacture

Memory chip structure having GAA transistors with different thresho...

Methods of forming semiconductor devices including gate barrier layers

Semiconductor devices

Semiconductor device and preparation method thereof

Fin-based device having an isolation gate interfacing with a source...

Semiconductor device including emitter regions and method of manufa...

Method for manufacturing semiconductor device

Multi-threshold voltage devices and associated techniques and confi...

Enhanced channel strain to reduce contact resistance in NMOS FET de...

Gate-all-around field effect transistor having multiple threshold v...

Assemblies which include ruthenium-containing conductive gates

Method of fabricating semiconductor devices including a fin field e...

Partial metal grain size control to improve CMP loading effect

Wide band gap semiconductor device with surface insulating film

Semiconductor devices with nanowires and methods for fabricating th...

Structure for metal gate electrode and method of fabrication

Patents Applicationslast 30 patents

METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

FIELD-EFFECT TRANSISTORS (FETS) EMPLOYING THERMAL EXPANSION OF WORK...

SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING SAME

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

CONTACT INTEGRATION IN COMPLEMENTARY FIELD EFFECT TRANSISTOR (CFET)...

FinFET Device With High-K Metal Gate Stack

SEMICONDUCTOR GATE AND CONTACT FORMATION

METHOD FOR FABRICATING METAL GATE DEVICES AND RESULTING STRUCTURES

SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME

SEMICONDUCTOR DEVICE STRUCTURE AND METHODS OF FORMING THE SAME

Metal Contacts on Metal Gates and Methods Thereof

METHOD AND STRUCTURE FOR METAL GATE BOUNDARY ISOLATION

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURE

SEMICONDUCTOR DEVICE WITH COMPOSITE WORD LINE STRUCTURE AND METHOD...

DUAL GATE STRUCTURE FOR MEMORY DEVICE

Methods of Forming Semiconductor Devices Including Gate Barrier Layers

INTEGRATED CIRCUITS WITH RECESSED GATE ELECTRODES

SEMICONDUCTOR DEVICES

MULTI-THRESHOLD VOLTAGE DEVICES AND ASSOCIATED TECHNIQUES AND CONFI...

SELECTIVE SILICIDE FOR STACKED MULTI-GATE DEVICE

ETCHING COMPOSITION FOR SEMICONDUCTOR SUBSTRATE FOR MEMORY ELEMENT...

SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME

SEMICONDUCTOR STRUCTURE AND FABRICATION METHOD THEREOF

GATE-ALL-AROUND FIELD-EFFECT TRANSISTOR DEVICE

FORMING METAL CONTACTS ON METAL GATES

SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME

WIDE BAND GAP SEMICONDUCTOR DEVICE WITH SURFACE INSULATING FILM

METAL OXIDE SEMICONDUCTOR HAVING EPITAXIAL SOURCE DRAIN REGIONS AND...

SEMICONDUCTOR DEVICE COMPRISING ALIGNMENT KEY

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME