Claims
- 1. An apparatus for abatement of effluent from a CVD process using an organometallic copper source reagent, said apparatus comprising:a sorbent bed comprising sorbent material having sorptive affinity for the organometallic copper source reagent and decomposition byproducts thereof; and a flow path joining the sorbent bed in gas flow communication with the process, so that effluent is flowed through the gas flow path to the sorbent bed for effluent abatement, wherein said flow path comprises a pump, and a heated flow path portion upstream of the pump.
- 2. An apparatus for abatement of effluent from a CVD process using an organometallic copper source reagent, said apparatus comprising:a sorbent bed comprising sorbent material having sorptive affinity for the organometallic copper source reagent and decomposition byproducts thereof; and a flow path joining the sorbent bed in gas flow communication with the process, so that effluent is flowed through the gas flow path to the sorbent bed for effluent abatement, wherein said flow path comprises a pump, and a cold trap in the flow path downstream of the pump.
- 3. An apparatus for abatement of effluent from a CVD process for depositing copper on a substrate from a Cu(hfac)TMVS source reagent, said apparatus comprising:a sorbent bed having sorptive affinity for Cu(hfac)TMVS, Cu(hfac)2 and TMVS; a flow path joining the sorbent bed in gas flow communication with the process, so that effluent from the CVD process flows through said sorbent bed, to remove residual Cu(hfac)TMVS, Cu(hfac)2 and TMVS from the effluent, wherein said flow path comprises a pump, and a heated effluent flow passage upstream of the pump.
- 4. An apparatus for abatement of effluent from a CVD process for depositing copper on a substrate from a Cu(hfac)TMVS source reagent, said apparatus comprising:a sorbent bed having sorptive affinity for Cu(hfac)TMVS, Cu(hfac)2 and TMVS; a flow path joining the sorbent bed in gas flow communication with the process, so that effluent from the CVD process flows through said sorbent bed, to remove residual Cu(hfac)TMVS, Cu(hfac)2 and TMVS from the effluent, wherein said flow path comprises a pump, and a cold trap downstream of the pump.
Parent Case Info
This is a division of U.S. application Ser. No. 09/420,108, filed on Oct. 18, 1999, now U.S. Pat. No. 6,391,385.
US Referenced Citations (19)
Non-Patent Literature Citations (2)
Entry |
B. Zorich & M. Majors, “Safety and Environmental Concerns of CVD copper precursors” Solid State Tech., Sep. 1998, pp. 101-106. |
Laura Mendicino, Paul Thomas Brown, “The environment, health and safety side of copper metalization,” Semiconductor Inter., Jun. 1998, pp. 105-110. |