Claims
- 1. An active matrix assembly for an electro-optical device including a plurality of liquid crystal cells, wherein data signals are supplied to the liquid crystal cells through a plurality of field effect transistors arranged in a plurality of picture elements, each of the plurality of field effect transistors comprising:
- a channel region comprising a semiconductor layer, the semiconductor layer disposed over a substrate;
- a source region and a drain region spaced apart by the channel region, the drain region having a contact region;
- an insulating film formed over at least the channel region;
- a gate electrode formed over the insulating film;
- a driving electrode being directly in contact with the drain region for coupling the drain region to one of the liquid crystal cells; and
- a conductive material covering a portion of the driving electrode over the contact region of the drain region.
- 2. The active matrix assembly of claim 1, wherein said conductive material is Al.
- 3. The active matrix assembly of claim 1, wherein the semiconductor layer is selected from the group consisting of polycrystalline silicon, amorphous silicon and cadmium selenide.
- 4. The active matrix assembly of claim 1, wherein the substrate is one of glass and quartz.
- 5. The active matrix assembly of claim 1, wherein the liquid crystal driving electrode is transparent.
- 6. The active matrix assembly of claim 1, wherein the liquid crystal driving electrode is selected from the group consisting of indium oxide, tin oxide and indium tin oxide.
- 7. The active matrix assembly of claim 1, wherein the insulating film is a thermal oxide layer.
- 8. An active matrix assembly for an electro-optical device including a plurality of liquid crystal cells, wherein data signals are supplied to the liquid crystal cells through a plurality of field effect transistors arranged in a plurality of picture elements, each of the plurality of field effect transistors being connected to a plurality of gate lines and a plurality of source lines crossing the gate lines, each of the plurality of field effect transistors comprising:
- a channel region comprising a semiconductor layer, the semiconductor layer disposed over a substrate;
- a source region and a drain region spaced apart by the channel region, the drain region having a contact region;
- a gate insulating film formed over at least the channel region;
- a gate electrode formed over the gate insulating film;
- an insulating layer formed over the gate insulating film and the gate electrode;
- contact holes formed in the insulating layer and the gate insulating film over the source region and the drain region;
- a driving electrode formed over at least a portion of the insulating layer and in the contact hole over the drain region, the driving electrode being directly in contact with the drain region for coupling the drain region to one of the liquid crystal cells; and
- a conductive material covering a portion of the driving electrode in the contact hole over the contact region of the drain region, the conductive material being a same material as the source lines.
- 9. The active matrix assembly of claim 8, wherein said conductive material is Al.
- 10. The active matrix assembly of claim 8, wherein the semiconductor layer is selected from the group consisting of polycrystalline silicon, amorphous silicon and cadmium selenide.
- 11. The active matrix assembly of claim 8, wherein the substrate is one of glass and quartz.
- 12. The active matrix assembly of claim 8, wherein the liquid crystal driving electrode is transparent.
- 13. The active matrix assembly of claim 8, wherein the liquid crystal driving electrode is selected from the group consisting of indium oxide, tin oxide and indium tin oxide.
- 14. The active matrix assembly of claim 8, wherein the insulating film is a thermal oxide layer.
Priority Claims (3)
Number |
Date |
Country |
Kind |
57-74014 |
Apr 1982 |
JPX |
|
57-74015 |
Apr 1982 |
JPX |
|
57-75814 |
May 1982 |
JPX |
|
Parent Case Info
This is a Continuation of application Ser. No. 08/259,354 filed May 3, 1994, which in turn is a Continuation of Ser. No. 08/014,053 filed Feb. 5, 1993 now U.S. Pat. No. 5,365,079, which in turn is a Continuation of Ser. No. 07/803,699 filed Dec. 4, 1991 (abandoned), which is a Continuation of Ser. No. 07/484,466 filed Feb. 22, 1990 (abandoned), which is a Continuation of Ser. No. 07/285,292 filed Dec. 15, 1988 (abandoned), which is a Continuation of Ser. No. 06/894,432 filed Jul. 16, 1986 (abandoned), which is a Continuation of Ser. No. 06/489,986 filed Apr. 29, 1983 (abandoned).
US Referenced Citations (12)
Foreign Referenced Citations (4)
Number |
Date |
Country |
54-20692 |
Feb 1979 |
JPX |
58-125087 |
Jul 1983 |
JPX |
2067353 |
Dec 1980 |
GBX |
2066545 |
Jul 1981 |
GBX |
Non-Patent Literature Citations (4)
Entry |
Hayama et al., "Amorphous-silicon thin-film metal-oexide-semiconductor transistors," Appl. Phys. Lett. 369(9), May 1, 1980, pp. 754-755. |
Hosokawa et al., "Dichroic Guest-Host Active Matrix Video Display," Biennial Display Research Conference, Paper 11.6 (1980). |
Kamins et al., "Hydrogenation of Transistors Fabricated in Polycrystalline-Silicone Films," IEEE Elec. Dev. Lett., vol. EDL-1, No. 8, Aug. 1980, pp. 159-161. |
Morozumi, "Active Matrix Addressed Liquid-Crystal Displays," 1985 International Display Research Conference, pp. 9-13. |
Continuations (7)
|
Number |
Date |
Country |
Parent |
259354 |
May 1994 |
|
Parent |
14053 |
Feb 1993 |
|
Parent |
803699 |
Dec 1991 |
|
Parent |
484466 |
Feb 1990 |
|
Parent |
285292 |
Dec 1988 |
|
Parent |
894432 |
Jul 1986 |
|
Parent |
489986 |
Apr 1983 |
|