Claims
- 1. An active matrix assembly comprising:a transmissive electro-optical device including a plurality of liquid crystal cells, data signals being supplied to the plurality of liquid crystal cells through a plurality of field effect transistors, each of the plurality of field effect transistors comprising: a channel region, a source region and a drain region, the channel region comprising a non-monocrystalline silicon layer over an insulating transparent a gate insulating film in contact with at least the channel region; a gate electrode in contact with the gate insulating film; and a non-transparent electrode connected to the drain region, the non-transparent electrode completely overlapping the channel region.
- 2. The active matrix assembly of claim 1, wherein the non-transparent electrode is aluminum.
- 3. The active matrix assembly of claim 1, wherein the non-monocrystalline silicon layer is a polycrystalline silicon layer.
- 4. The active matrix assembly of claim 3, wherein the polycrystalline silicon layer has a thickness less than 2500 A.
Priority Claims (3)
Number |
Date |
Country |
Kind |
57-74014 |
Apr 1982 |
JP |
|
57-74015 |
Apr 1982 |
JP |
|
57-75814 |
May 1982 |
JP |
|
Parent Case Info
This is a Continuation of application Ser. No. 08/406,419 filed Mar. 20, 1995, now U.S. Pat. No. 5,650,637 which in turn is a Continuation of Ser. No. 08/259,354 filed May 3, 1994, U.S. Pat. No. 6,087,608 which in turn is a Continuation of Ser. No. 08/014,053 filed Feb. 5, 1993 (now U.S. Pat. No. 5,365,079), which in turn is a Continuation of Ser. No. 07/803,699 filed Dec. 4, 1991 (abandoned), which in turn is a Continuation of Ser. No. 07/484,466 filed Feb. 22, 1990 (abandoned), which in turn is a Continuation of Ser. No. 07/285,292 filed Dec. 15, 1988 (abandoned), which in turn is a Continuation of Ser. No. 06/894,432 filed Jul. 16, 1986 (abandoned), which in turn is a Continuation of Ser. No. 06/489,986 filed Apr. 29, 1983 abandoned.
US Referenced Citations (12)
Foreign Referenced Citations (5)
Number |
Date |
Country |
2067353 |
Dec 1980 |
GB |
2066545 |
Jul 1981 |
GB |
2074788 |
Nov 1981 |
GB |
54-20692 |
Feb 1979 |
JP |
58-125087 |
Jul 1983 |
JP |
Non-Patent Literature Citations (4)
Entry |
Hayama et al., “Amorphous-silicon thin-film metal-oexide-semiconductor transistors,” Appl. Phys. Lett. 36(9), May 1, 1980, pp. 754-755. |
Hosokawa et al, “Dichroic Guest-Host Active Matrix Video Display,” Biennial Display Research Conference, Paper 11.6 (1980). |
Kamins et al., “Hydrogenation of Transistors Fabricated in Polycrystalline-Silicone Films,” IEEE Elec. Dev. Lett., vol. EDL-1, No. 8, Aug. 1980, pp. 159-161. |
Morozumi, “Active Matrix Addressed Liquid-Crystal Displays,” 1985 International Display Research Conference, pp. 9-13. |
Continuations (8)
|
Number |
Date |
Country |
Parent |
08/406419 |
Mar 1995 |
US |
Child |
08/859494 |
|
US |
Parent |
08/259354 |
May 1994 |
US |
Child |
08/406419 |
|
US |
Parent |
08/014053 |
Feb 1993 |
US |
Child |
08/259354 |
|
US |
Parent |
07/803699 |
Dec 1991 |
US |
Child |
08/014053 |
|
US |
Parent |
07/484466 |
Feb 1990 |
US |
Child |
07/803699 |
|
US |
Parent |
07/285292 |
Dec 1988 |
US |
Child |
07/484466 |
|
US |
Parent |
06/894432 |
Jul 1986 |
US |
Child |
07/285292 |
|
US |
Parent |
06/489986 |
Apr 1983 |
US |
Child |
06/894432 |
|
US |