1. Field
Some embodiments generally relate to the conversion of solar radiation to electrical energy. More specifically, embodiments may relate to systems to improve the efficiency of manufacture and/or operation of solar radiation collectors.
2. Brief Description
A concentrating solar radiation collector may convert received photons (i.e., sunlight) into a concentrated beam of photons and direct the concentrated beam onto a small photovoltaic cell. The cell, in turn, converts the photons of the concentrated beam into electrical current.
U.S. Patent Application Publication No. 2006/0231133 describes several types of concentrating solar collectors. As described therein, a photovoltaic cell may be coupled to concentrating optics and electrical contacts of a solar collector using a clear adhesive (e.g., silicone) and wirebonds, respectively. Alternatively, photovoltaic cell may be incorporated into a surface mount package or a front-side mounting package and connected to optics using clear underfill material and to electrical contacts using soldered interconnects.
A photon-receiving surface of a photovoltaic cell must be aligned precisely with respect to the optical path of the solar collector. The alignment is achieved by mechanical means such as industrial pick and place machines and will likely require local fiducial marks to be placed on the optics. The alignment accuracy depends on the mechanical accuracy of the pick and place machine and the placement accuracy of the local fiducial marks.
The above-described alignment techniques can be inefficient and expensive. For example, accurate alignment (e.g., in the 10-12 micron range) will likely require reduction of the pick and place speed. The combination of reduced pick and place speed and the requirement of local fiducials will slow down the production speed and result in higher production cost.
What is needed is a system to couple an optically-active semiconductor device to an optical element that addresses one or more of the foregoing and/or other existing concerns.
To address at least the foregoing, some aspects provide a system, an apparatus, a method and/or process steps to place a solder bump in contact with an electrical contact of a solar cell, place the solder bump in contact with an electrical contact of an optical element, and melt the solder bump to couple the electrical contact of the solar cell to the electrical contact of the optical element. Some embodiments may melt the solder bump in order to align an optically active area of the solar cell with a light-emitting interface of the optical element.
In some aspects, an apparatus includes a solar cell comprising a first electrical contact, the solar cell to generate charge carriers in response to received photons, an optical element comprising a second electrical contact, and a solder bump in contact with the first electrical contact and the second electrical contact. The solar cell may comprise an optically-active area, the optical element may comprise a light-emitting interface, and the optically-active area may be aligned with the light-emitting interface.
Further to the foregoing aspect, the solar cell may include a semiconductor substrate comprising a majority of a first type of charge carrier, a first semiconductor portion comprising a majority of a second type of charge carrier, and a semiconductor layer disposed between the semiconductor substrate and the first semiconductor portion to generate charge carriers of the first type and of the second type in response to received photons. A third electrical contact may be in contact with the semiconductor substrate and may receive charge carriers of the second type generated by the semiconductor layer. Moreover, the first semiconductor portion may be disposed between the first electrical contact and the semiconductor layer.
The claims are not limited to the disclosed embodiments, however, as those in the art can readily adapt the description herein to create other embodiments and applications.
The construction and usage of embodiments will become readily apparent from consideration of the following specification as illustrated in the accompanying drawings, in which like reference numerals designate like parts.
The following description is provided to enable any person in the art to make and use the described embodiments and sets forth the best mode contemplated by for carrying out some embodiments. Various modifications, however, will remain readily apparent to those in the art.
Initially, at S110, a solder bump is fabricated on an electrical contact of a solar cell. The solder bump may be composed of any suitable material and may be fabricated on the electrical contact using any system that is or becomes known. According to some embodiments, the solder bump conforms to the Controlled Collapse Chip Connect (C4) specification, is built up on the electrical contact according to the C4 specification, and is therefore referred to as a C4 solder bump. One or more additional solder bumps may be fabricated on respective ones of one or more additional electrical contacts of the solar cell at S110 in some embodiments. Such fabrication may occur simultaneously or consecutively.
Solar cell 200 includes electrical contacts 202 and 204, but embodiments are not limited to two electrical contacts. Electrical contacts 202 and 204 may be fabricated during fabrication of solar cell 200, and may comprise solder pads and/or any number of conductive (e.g., metal) layers. Detailed descriptions of electrical contacts 202 and 204 according to some embodiments will be provided below.
Returning to process 100, the solder bump is placed in contact with an electrical contact of an optical element at S120. The optical element may be composed of any suitable material or combination of materials. The optical element may comprise any number of disparate elements (e.g., lenses, mirrors, etc.) in some embodiments.
The electrical contact of the optical element may comprise any conductive structure, including but not limited to a solder pad, a metal trace, and a metal surface coating. The electrical contact may have been fabricated on the optical element using any technique. Non-exhaustive examples include sputtering, chemical vapor deposition, and thermal spraying (e.g., twin wire arcing, plasma spraying, powder coating).
According to some embodiments, the placement need not be as accurate as the above-mentioned techniques. For example, solder bumps 212 and 214 may be skewed slightly with respect to contacts 222 and 224 as shown in
Next, at S130, the solder bump is melted to couple the electrical contact of the solar cell to the electrical contact of the optical element. Any solder reflow process that is or becomes known may be employed at S130. Generally, energy is applied to melt the solder bump and to form a bond between the two electrical contacts. If the energy is in the form of heat, a temperature is determined based on the composition of the solder bump and characteristics of solar cell 200 and element 220. Details of such a determination are known in the art.
According to some embodiments, a solder bump is fabricated on an electrical contact of an optical element, and the solder ball is then placed on an electrical contact of a solar cell. In other words, the roles of the optical element and the solar cell are opposite to that described with respect to S110 and S120 of process 100. The solder bump may then be melted as described at S130 to couple the electrical contact of the optical element to the electrical contact of the solar cell.
Flow begins at S410, at which solder bumps are fabricated on respective electrical contacts of a solar cell. The solder bumps may comprise C4 solder bumps and may be fabricated on the electrical contacts using any system that is or becomes known.
Device 510 includes semiconductor substrate 511 comprising a majority of a first type of charge carriers. Substrate 511 comprises p+ Ge in some embodiments, but any other suitable substrate material may be used in conjunction with some embodiments. Moreover, the types of charge carriers associated therewith may be reversed from that described herein (i.e., all p regions may be substituted for n regions and vice versa).
Semiconductor layer 513 is capable of generating charge carriers (i.e., holes and electrons) in response to received photons. According to some embodiments, layer 513 comprises three distinct junctions deposited using any suitable method. According to some embodiments, the junctions are formed using molecular beam epitaxy and/or molecular organic chemical vapor deposition. The junctions may include a Ge junction, a GaAs junction, and a GaInP junction. Each junction exhibits a different band gap energy, which causes each junction to absorb photons of a particular range of energies.
Semiconductor portions 514 may comprise n++ GaAs and may support metal (e.g., Ag) contacts 515. Metal contacts 515 may comprise any suitable metal contact, and may include a thin adhesion layer (e.g., Ni or Cr), an ohmic metal (e.g., Ag), a diffusion barrier layer (e.g., TiW or TiW:N), a solderable metal (e.g., Ni), and a passivation metal (e.g., Au). Metal contact 516 is coupled to semiconductor region 517 comprising p++ Ge. Semiconductor region 517 may assist in establishing an ohmic contact between contact 516 and substrate 511, and may be omitted in some embodiments. Metal contact 516 exhibits a different polarity than metal contacts 515 by virtue of the illustrated structure. Solar cell 510 also includes anti-reflective coating 518 to allow light from an optical element to reach semiconductor layer 513.
Solder bumps 550 are attached to metal contacts 515. As shown in
Returning to process 400, the solder bumps are placed on corresponding electrical contacts of an optical element at S420.
Core 610 includes relatively large convex surface 611, substantially flat aperture surface 612, and relatively small concave surface 613. Primary mirror 620 and secondary mirror 630 are formed on convex surface 611 and concave surface 613, respectively. An upper periphery of optical element 610 includes six contiguous facets. This six-sided arrangement may facilitate the formation of large arrays of optical element 600 in a space-efficient manner.
In some embodiments, core 610 is molded from low-iron glass using known methods. Core 610 may alternatively be formed from a single piece of clear plastic, or separate pieces may be glued or otherwise coupled together to form core 610.
Primary mirror 620 and secondary mirror 630 may be fabricated by sputtering or otherwise depositing a reflective mirror material (e.g., silver (Ag) or aluminum (Al)) directly onto convex surface 611 and concave surface 613. Primary mirror 620 includes conductive portion 622 disposed on a first half of convex surface 611, and conductive portion 624 disposed on a second half of convex surface 611.
Gap 627 is defined between conductive portions 622 and 624 to facilitate electrical isolation thereof. Accordingly, conductive portions 622 and 624 of primary mirror 620 may create a conductive path for electrical current generated by photovoltaic cell 510. Conductive portions 622 and 624 may also, as described in above-mentioned U.S. Patent Application Publication No. 2006/0231133, electrically link photovoltaic cells of adjacent collectors in a concentrating solar collector array.
Primary mirror 620 also includes opening 628 within area 629. In some embodiments, light may pass from core 610 through opening 628 and to solar cell 510. Additional details of the operation of optical element 600 according to some embodiments will be provided below.
Process 400 may operate on an optical element exhibiting any other suitable configuration. Some examples are described in U.S. Patent Application Nos. (Atty. Docket No. SF-P060, Atty. Docket No. SF-P071, and Atty. Docket No. SF-P072) filed on even date herewith.
According to some embodiments, flux is applied to the solder bumps prior to S420 using known systems. The placement itself may be performed by a fast speed pick and place machine instead of a flip chip bonder in some embodiments. According to some embodiments, the placement need not be as accurate as in conventional flip-chip bonding techniques.
Solder bumps 550 are skewed slightly with respect to contacts 640. Accordingly, window 520 of solar cell 510 is slightly mis-aligned with opening 628 of optical element 600. Window 520 comprises an interface into which solar cell 510 receives photons and from which the photons are transmitted to optically-active semiconductor layer 513.
Next, at S430, the solder bumps are reflowed (i.e., melted) to align an optically-active area of the solar cell with a light-emitting interface of the optical element. S430 may employ any solder reflow system that is or becomes known. When melted, the surface tension of the solder bumps may move the solar cell so as to align the optically-active area with the light-emitting interface.
Underfill material is deposited between the solar cell and the optical element and around the solder bumps at S440. The underfill material may comprise any currently- or hereafter-known underfill material and may be deposited by any suitable system. The underfill material may be optically-transparent to wavelengths of light corresponding to the solar cell. Once cured, the underfill material may protect the solder bumps as well as the optical interfaces of the solar cell and the optical element.
A heat paddle may be coupled to the solar cell and to a second electrical contact of the optical element at S450. The heat paddle may dissipate heat from the solar cell and may also conduct current from the solar cell to the second electrical contact.
Heat paddle 800 is also coupled to electrical contact 642 of optical element 600. As noted above, contact 516 is of a different polarity than contacts 515 of solar cell 510 and electrical contact 642 is electrically isolated from electrical contacts 640. Accordingly, electrical contact 642 and electrical contacts 640 may serve to carry generated charge away from solar cell 510 in some embodiments.
The heat paddle, the solar cell, and the electrical contacts of the optical element are encapsulated at S460. Encapsulation may serve to further protect the encapsulated elements. The encapsulant may comprise a polymer or any other suitable material deposited by any suitable means.
The apparatus depicted in
The solar rays may pass through anti-reflective coating 518 before being absorbed by semiconductor layer 513. Layer 513 generates charge carriers in response to the received light, which pass to metal contacts 515 and 516 and to corresponding ones of electrical contacts 640 and 642. The charge carriers (i.e., electric current) are then conducted to external circuitry (and/or to similar serially-connected apparatuses) to which electrical contacts 640 and 642 are connected.
The several embodiments described herein are solely for the purpose of illustration. Embodiments may include any currently or hereafter-known versions of the elements described herein. Therefore, persons in the art will recognize from this description that other embodiments may be practiced with various modifications and alterations.
The present application claims priority to U.S. Provisional Patent Application Ser. No. 60/899,150, filed on Feb. 2, 2007 and entitled “Concentrated Photovoltaic Energy Designs”, the contents of which are incorporated herein by reference for all purposes.
Number | Date | Country | |
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60899150 | Feb 2007 | US |