ANTI-REFLECTION COATED IMAGE SENSOR AND MANUFACTURING METHOD THEREOF

Abstract

An image sensor coated with an anti-reflection material having a microlens provided on a semiconductor substrate, the microlens corresponding to a light receiving device formed in the semiconductor substrate wherein the image sensor includes a first layer coated on a surface of the microlens, and a second layer coated on the first layer, wherein the second layer has a smaller refractive index than the first layer.

Description

BRIEF DESCRIPTION OF THE DRAWINGS

Exemplary embodiments of the present invention can be understood in more detail from the following description taken in conjunction with the accompanying drawings in which:

FIG. 1A is a schematic view of a conventional image sensor which has a dead zone;

FIG. 1B is a schematic view of a conventional image sensor which has a dead zone removed by having a first layer coated on the conventional image sensor shown in FIG. 1A;

FIG. 2 is a schematic view of an image sensor coated with an anti-reflection material according to an exemplary embodiment of the present invention;

FIG. 3 is a graph illustrating light transmittance versus thickness of a second layer coated on the image sensor illustrated in FIG. 2;

FIG. 4 is a graph illustrating simulation results for transmittance of light incident on the image sensor illustrated in FIG. 2; and

FIG. 5 is a flowchart illustrating a method of manufacturing an image sensor coated with an anti-reflection material according to an exemplary embodiment of the present invention.

Claims

1. An image sensor coated with an anti-reflection material having a microlens provided on a semiconductor substrate, the microlens corresponding to a light receiving device formed in the semiconductor substrate, the image sensor comprising: a first layer coated on a surface of the microlens; anda second layer coated on the first layer, wherein the second layer has a smaller refractive index than the first layer.

2. The image sensor of claim 1, wherein a sum of thicknesses of the first layer and the second layer is sufficient to remove a dead zone of the microlens.

3. The image sensor of claim 2, wherein the first layer comprises an oxide.

4. The image sensor of claim 3, wherein the first layer is coated to a thickness that minimizes reflectance of light incident on the microlens.

5. The image sensor of claim 4, wherein the first layer has a thickness of about 8,000 Å.

6. The image sensor of claim 2, wherein the second layer comprises MgF2.

7. The image sensor of claim 6, wherein the second layer is coated to a thickness to minimize reflectance of light incident on the microlens.

8. The image sensor of claim 7, wherein the second layer has a thickness of about 900 Å.

9. The image sensor of claim 2, wherein the first layer comprises an oxide, and the second layer comprises MgF2.

10. The image sensor of claim 9, wherein the first layer is coated to a thickness of about 8,000 Å and the second layer is coated to a thickness of about 900 Å.

11. A method of manufacturing an anti-reflection coated image sensor having a microlens provided on a semiconductor substrate, the microlens corresponding to a light receiving device formed in the semiconductor substrate, the method comprising: coating a first layer on a surface of the microlens; andcoating a second layer on the first layer, wherein the second layer has a smaller refractive index than the first layer.

12. The method of claim 11, wherein a sum of thicknesses of the first layer and the second layer is sufficient to remove a dead zone of the microlens.

13. The method of claim 12, wherein the first layer comprises an oxide.

14. The method of claim 13, wherein the first layer is coated to a thickness that minimizes reflectance of light incident on the microlens.

15. The method of claim 14, wherein the first layer has a thickness of about 8,000 Å.

16. The method of claim 12, wherein the second layer comprises MgF2.

17. The method of claim 16, wherein the second layer is coated to a thickness that minimizes reflectance of light incident on the microlens.

18. The method of claim 17, wherein the second layer has a thickness of about 900 Å.

19. The method of claim 12, wherein the first layer comprises an oxide, and the second layer comprises MgF2.

20. The method of claim 19, wherein the first layer is coated to a thickness of about 8,000 Å and the second layer is coated to a thickness of about 900 Å.