Claims
- 1. A coated substrate comprising:a substrate having thereom: a coating layer of an antireflective composition, the antireflective composition comprising a benzoguanamine crosslinker; and a coating layer of a photoresist composition over the antireflective layer.
- 2. The substrate of claim 1 wherein the antireflective composition is crosslinked.
- 3. The substrate of claim 1 wherein the antireflective composition comprises a benzoguanamine resin.
- 4. The substrate of claim 1 wherein the antireflective composition further comprises a melamine crosslinker component.
- 5. The substrate of claim 1 wherein the antireflective composition comprises a thermal acid generator.
- 6. The substrate of claim 1 wherein the antireflective composition comprises an anthracene material.
- 7. The substrate of claim 1 wherein the substrate is a microelectronic wafer.
- 8. A method for forming a relief image on a substrate comprising:applying on the substrate a layer of an antihalation composition comprising a benzoguanamine crosslinker; applying over the antihalation composition layer a photoresist composition.
- 9. The method of claim 8 wherein the antihalation composition layer is crosslinked prior to applying the photoresist composition.
- 10. The method of claim 9 wherein the photoresist composition is imaged with activating radiation and the imaged photoresist composition is treated with a developer to provide a photoresist relief image.
- 11. The method of claim 10 wherein areas bared of photoresist upon treatment with the developer are etched.
- 12. The method of claim 10 wherein areas bared of photoresist upon treatment with the developer are exposed to plasma gas.
- 13. The method of claim 12 wherein the plasma gas penetrates the antihalation composition coating layer.
- 14. The method of claim 8 wherein the antihalation composition comprises a benzoguanamine resin.
- 15. The method of claim 8 wherein the antihalation composition further comprises a melamine crosslinker.
- 16. The method of claim 8 wherein the antihalation composition comprises a thermal acid generator.
- 17. The method of claim 8 wherein the antihalation composition comprises an anthracene material.
- 18. The method of claim 8 wherein the substrate is a microelectronic wafer.
- 19. The method of claim 8 wherein the photoresist composition is imaged with activating radiation and the imaged photoresist composition is treated with a developer to provide a photoresist relief image.
- 20. The method of claim 19 wherein areas bared of photoresist upon treatment with the developer are etched.
- 21. The method of claim 19 wherein areas bared of photoresist upon treatment with the developer are exposed to plasma gas.
- 22. The method of claim 21 wherein the plasma gas penetrates the antihalation composition coating layer.
Parent Case Info
This application is a divisional of U.S. application Ser. No. 09/924,045, filed Aug. 7, 2001, now U.S. Pat. No. 6,472,128 which is a continuation of application Ser. No. 08/640,144, filed Apr. 30, 1996, now U.S. Pat. No. 6,451,503 which application is a continuation of application Ser. No. 07/792,482, filed Nov. 15, 1991 now U.S. Pat. No. 6,165,697.
US Referenced Citations (38)
Foreign Referenced Citations (2)
Number |
Date |
Country |
278 691 |
May 1990 |
DD |
WO 9003598 |
Apr 1990 |
WO |
Non-Patent Literature Citations (2)
Entry |
Elliott, “Integrated Circuit Fabrication Technology”, McGraw Hill Book Col, 1982 pp. 259, 263-275 and 305-309. |
Lamola et al., “Chemically Amplified Resists”, Solid State Technology, Aug. 1991, pp. 53-60. |
Continuations (2)
|
Number |
Date |
Country |
Parent |
08/640144 |
Apr 1996 |
US |
Child |
09/924045 |
|
US |
Parent |
07/792482 |
Nov 1991 |
US |
Child |
08/640144 |
|
US |