Claims
- 1. An apparatus for forming a layer on a substrate by atomic layer deposition, comprising:
a chamber and a lid, the lid capable of sealing the chamber to define a reaction chamber therein; a support including a pedestal having a top surface adapted to support the substrate, wherein a first volume in the reaction chamber is defined on one side of the top surface and a second volume is defined on an opposite of the top surface; and at least one port through which a vacuum may be applied, where upon application of vacuum to at least one port, a bottom purge of the support is performed and a virtual shower curtain is established between the pedestal and the chamber to restrict flow from the first volume to the second volume.
- 2. The apparatus of claim 1, further comprising a showerhead mounted to the lid.
- 3. The apparatus of claim 2, wherein the showerhead comprises holes for distributing gas therethrough to the substrate, the holes having a diameter of about ⅛″ to ⅜″.
- 4. The apparatus of claim 3, wherein the showerhead comprises spacers thereon to prevent a fluid-tight seal with the lid, wherein upon mounting the showerhead to the lid, a gap is formed therebetween defining horizontal pathways for peripheral distribution of gas from the showerhead.
- 5. The apparatus of claim 2, wherein the showerhead comprises spacers thereon to prevent a fluid-tight seal with the lid, wherein upon mounting the showerhead to the lid, a gap is formed therebetween defining horizontal pathways for peripheral distribution of gas from the showerhead.
- 6. The apparatus of claim 2, wherein the showerhead comprises a single gas distribution bore.
- 7. The apparatus of claim 1, further comprising a pair of gas valves mounted immediately adjacent the lid to minimize dead volume in flow paths connecting the valves with the reaction chamber.
- 8. The apparatus of claim 7, wherein the valves are mounted flush against the lid.
- 9. The apparatus of claim 8, wherein the valves are threaded into the lid.
- 10. The apparatus of claim 8, wherein the valves are welded into the lid.
- 11. The apparatus of claim 7, wherein the valves are zero dead volume valves.
- 12. The apparatus of claim 7, wherein the valves are pneumatic valves.
- 13. The apparatus of claim 7, wherein the valves are solenoid valves.
- 14. The apparatus of claim 7, wherein the valves are piezo valves.
- 15. The apparatus of claim 7, further comprising micro electro-mechanical system controlled valves.
- 16. An apparatus for forming a layer on a substrate by atomic layer deposition, the apparatus comprising:
a chamber and a lid, the lid capable of sealing with the chamber to define a reaction chamber therein; a showerhead mounted to the lid and having at least one hole having a diameter of at least about ⅛″ for distributing gas therethrough and into the reaction chamber; a support including a pedestal having a top surface adapted to support the substrate, wherein a first volume in the reaction chamber is defined on one side of the top surface and a second volume is defined on an opposite of the top surface; and at least one port through which a vacuum may be applied, where upon application of vacuum to at least one port, a bottom purge of the support is performed and a virtual shower curtain is established between the pedestal and the chamber to restrict flow from the first volume to the second volume.
- 17. The apparatus of claim 16, further comprising fast cycle valves mounted on top of the lid and fluidly connected with the showerhead, the valves each having a valve cycle time of less than about 400 msec.
- 18. The apparatus of claim 17, wherein the valves each have a cycle time of about 100 msec.
- 19. A method of reducing an amount of time needed to form a film on a substrate by atomic layer deposition, the method comprising:
positioning the substrate on a support in a reaction chamber; and establishing a virtual shower curtain between the support and walls of the reaction chamber, thereby dividing the reaction chamber into an upper volume above the support and the virtual shower curtain, and a lower volume, below the support and the virtual shower curtain; and distributing a reactant into the upper volume, wherein the virtual shower curtain restricts the reactant from flowing into the lower volume.
- 20. The method of claim 19, wherein the distributing is initiated by turning on a valve connecting a source of the reactant with the reaction chamber, the valve being turned on in less than about 400 msec.
- 21. The method of claim 20, wherein the valve is turned on in about 100 msec.
- 22. The method of claim 19, wherein the distributing comprises flowing the reactant through a showerhead having at least one distribution hole having a diameter of at least ⅛″
- 23. The method of claim 22, wherein the showerhead has a plurality of distribution holes each having a diameter of about ⅛″ to ⅜″.
- 24. The method of claim 19, wherein the establishing a virtual shower curtain is accomplished by performing a bottom purge of the support.
- 25. An apparatus for forming a layer on a substrate, comprising:
a chamber lid; and two or more valves mounted to the chamber lid, the two or more valves adapted to provide pulses of reactants.
- 26. The apparatus of claim 25, wherein each of the valves are connected to separate reactant sources.
- 27. The apparatus of claim 25, wherein each of the valves are connected to a common purge gas source.
- 28. The apparatus of claim 25, wherein the two or more valves are adapted to simultaneously deliver a purge gas.
- 29. The apparatus of claim 25, wherein the valves are zero dead volume valves.
- 30. The apparatus of claim 25, wherein each of the valves are selected from the group including pneumatic valves, solenoid valves, and piezo-pilot valves.
- 31. The apparatus of claim 25, wherein each of the valves are MEMS controlled valves.
- 32. An chamber for forming a layer on a substrate, comprising:
chamber walls; a substrate support disposed within the chamber walls, the substrate support having a substrate receiving surface; a showerhead disposed over the substrate support and adapted to deliver one or more reactants and one or more purge gases; and a reaction zone comprising a volume between the showerhead, the substrate support, and the chamber walls.
- 33. The apparatus of claim 32, further comprising a gap between the substrate support and the chamber walls.
- 34. The apparatus of claim 33, further comprising a bottom purge gas port below the substrate support, the bottom purge gas port adapted to deliver a bottom purge gas between the gap between the substrate support and the chamber walls.
- 35. The apparatus of claim 34, wherein the bottom purge gas port is adapted to deliver a bottom purge gas to limit flow of reactants and purge gases from the showerhead below the substrate support.
- 36. The apparatus of claim 32, wherein the substrate receiving surface is adapted to receive a 300 mm substrate and wherein the volume of the reaction zone is less than about 2.25 liters.
- 37. The apparatus of claim 36, wherein the volume of the reaction zone is less than 1.35 liters.
- 38. The apparatus of claim 32, wherein the substrate receiving surface is adapted to receive a 200 mm substrate and wherein the volume of the reaction zone is less than about 1.0 liters.
- 39. The apparatus of claim 38, wherein the volume of the reaction zone is less than about 0.6 liters.
CROSS-REFERENCE TO RELATED APPLICATIONS
[0001] This application claims benefit of U.S. Provisional Patent Application Serial No. 60/337,076, entitled “Apparatus and Method For Fast-Cycle Atomic Layer Deposition,” filed Dec. 6, 2001, which is herein incorporated by reference.
Provisional Applications (1)
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Number |
Date |
Country |
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60337076 |
Dec 2001 |
US |